Results 11 to 20 of about 2,908 (186)

Characterization of MOCVD-Prepared CIS Solar Cells

Energies, 2021
Chalcopyrite Cu(In,Ga)Se2 (CIGS) solar cells prepared via metal-organic chemical vapor deposition (MOCVD) are one of the candidates for highly advanced photovoltaic devices.
Seung Hoon Lee, Hae-Seok Lee, Yoonmook Kang   +2 more
exaly   +3 more sources

ELIPSOMETRYCZNY SYSTEM SPEKTROSKOPOWY DO SZYBKIEJ OCENY SKŁADU CIENKICH WARSTW Bi2Te3-XSeX

Informatyka, Automatyka, Pomiary w Gospodarce i Ochronie Środowiska, 2021
W artykule najpierw dokonano analizy porównawczej obecnego stanu rozwoju elipsometrii spektroskopowej oraz określono główne ograniczenia typowe dla popularnych konfiguracji urządzeń pomiarowych. Zaproponowano oryginalne rozwiązanie techniczne pozwalające
Vladimir Kovalev, Saygid Uvaysov, Marcin Bogucki   +2 more
doaj   +1 more source

Synthesis, structure and superconducting properties of laminated thin film composites of YBа2 Cu3 O7–d /Y2 O3 as components of 2G HTS wires

Конденсированные среды и межфазные границы, 2021
2G HTS wires are capable of transferring huge amounts of electrical energy without loss. An increase in the current-carrying capacity in these materials is possible due to an increase in the thickness of the superconducting layer; however, there is a ...
Alexander E. Shchukin, Andrey R. Kaul, Alexander L. Vasiliev, Igor A. Rudnev   +3 more
doaj   +1 more source

Thin CdTe Layers Deposited by a Chamberless Inline Process using MOCVD, Simulation and Experiment

Applied Sciences, 2020
The deposition of thin Cadmium Telluride (CdTe) layers was performed by a chamberless metalorganic chemical vapour deposition process, and trends in growth rates were compared with computational fluid dynamics numerical modelling.
Shafiul Monir, Giray Kartopu, Vincent Barrioz, Dan Lamb, Stuart J. C. Irvine, Xiaogang Yang, Yuriy Vagapov   +6 more
doaj   +1 more source

Features of Metalorganic Chemical Vapor Deposition Selective Area Epitaxy of Al_zGa_1−zAs (0 ≤ z ≤ 0.3) Layers in Arrays of Ultrawide Windows

Technologies, 2023
AlzGa1−zAs layers of various compositions were grown using metalorganic chemical vapor deposition on a GaAs substrate with a pattern of alternating SiO2 mask/window stripes, each 100 µm wide.
Viktor Shamakhov, Sergey Slipchenko, Dmitriy Nikolaev, Ilya Soshnikov, Alexander Smirnov, Ilya Eliseyev, Artyom Grishin, Matvei Kondratov, Artem Rizaev, Nikita Pikhtin, Peter Kop’ev   +10 more
doaj   +1 more source

XRD and photoluminescence measurements of GaN grown on dome shaped patterned sapphire with different NH3 flow rates

Cumhuriyet Science Journal, 2021
The aim of the study is to understand the effects of NH3 flow rate in the initial part of high temperature (HT) GaN growth on structural and optical characteristics of the HT-GaN layer grown on dome shaped sapphire susbtrate by Metal Organic Chemical ...
İsmail Altuntas
doaj   +1 more source

PREPARATION AND CHARACTERIZATION OF METAL ORGANIC CHEMICAL VAPOUR DEPOSITED COPPER ZINC SULPHIDE THIN FILMS USING SINGLE SOLID SOURCE PRECURSORS [PDF]

European Journal of Materials Science and Engineering, 2019
Metal organic chemical vapour deposition (MOCVD) was used with a mixed single solid source precursors of copper dithiocarbamate (CuC10H16N2O2S4) and zinc dithiocarbamate (ZnC10H16N2O2S4) to prepare pyrolysed copper zinc sulphide thin films.
Joseph Onyeka EMEGHA, John DAMISA, Frank Ochuko-oghene EFE, Bolutife OLOFINJANA, Marcus Adebola ELERUJA, Sam Ogochukwu AZI   +5 more
doaj   +1 more source

TSF-MOCVD – a novel technique for chemical vapour deposition on oxide thin films and layered heterostructures

Конденсированные среды и межфазные границы, 2021
A new principle for supplying volatile precursors to MOCVD gas-phase chemical deposition systems is proposed, based on a two-stage evaporation of an organic solution of precursors from a soaked cotton thread, which passes sequentially through the zones ...
Andrey R. Kaul, Roy R. Nygaard, Vadim Yu. Ratovskiy, Alexander L. Vasiliev   +3 more
doaj   +1 more source

Effects of Different InGaN/GaN Electron Emission Layers/Interlayers on Performance of a UV-A LED

Applied Sciences, 2020
In this study, we investigated the effects of InGaN/GaN-based interlayer (IL) and electron emitting layer (EEL) consisting of a GaN barrier layer grown with different metal-organic (MO) precursors of gallium (Ga), which were grown underneath the active ...
Dohyun Kim, Keun Man Song, UiJin Jung, Subin Kim, Dong Su Shin, Jinsub Park   +5 more
doaj   +1 more source

Cubic InGaN Grown by Mocvd [PDF]

MRS Proceedings, 1998
AbstractWe report on the growth of high-quality cubic phase InGaN on GaAs by MOCVD. The cubic InGaN layers are grown on cubic GaN buffer layers on GaAs (001) substrates. The surface morphology of the films are mirror-like. The cubic nature of the InGaN films is obtained by X-ray diffraction (XRD) measurements.
J.B. Li, Hui Yang, L.X. Zheng, D.P. Xu, Y.T. Wang   +4 more
openaire   +1 more source