Results 11 to 20 of about 40,351 (278)
Ab initio study for molecular-scale adsorption, decomposition and desorption on AlN surfaces during MOCVD growth [PDF]
Scientific Reports, 2020 Since AlGaN offers new opportunities for the development of the solid state ultraviolet (UV) luminescence, detectors and high-power electronic devices, the growth of AlN buffer substrate is concerned.
Jiadai An +4 more
doaj +2 more sources
VN Thin Films via MOCVD Using a New Vanadium Precursor: Linking Growth Chemistry to Functional Surface Properties. [PDF]
Small MethodsGlauber JP +11 more
europepmc +2 more sources
Effects of Different InGaN/GaN Electron Emission Layers/Interlayers on Performance of a UV-A LED
Applied Sciences, 2020 In this study, we investigated the effects of InGaN/GaN-based interlayer (IL) and electron emitting layer (EEL) consisting of a GaN barrier layer grown with different metal-organic (MO) precursors of gallium (Ga), which were grown underneath the active ...
Dohyun Kim +5 more
doaj +1 more source
Cubic InGaN Grown by Mocvd [PDF]
MRS Proceedings, 1998 AbstractWe report on the growth of high-quality cubic phase InGaN on GaAs by MOCVD. The cubic InGaN layers are grown on cubic GaN buffer layers on GaAs (001) substrates. The surface morphology of the films are mirror-like. The cubic nature of the InGaN films is obtained by X-ray diffraction (XRD) measurements.
J.B. Li +4 more
openaire +1 more source
MOCVD of hard metallurgical coatings: Examples in the Cr–C–N system [PDF]
, 2005 All individual phases of the ternary Cr–C–N system including stable and metastable ones can be deposited at low temperature by metalorganic chemical vapor deposition (MOCVD).
Aldrich-Smith +24 more
core +2 more sources
Theory of MOCVD Growth of III-V Nanowires on Patterned Substrates
Nanomaterials, 2022 An analytic model for III-V nanowire growth by metal organic chemical vapor deposition (MOCVD) in regular arrays on patterned substrates is presented. The model accounts for some new features that, to the author’s knowledge, have not yet been considered.
Vladimir G. Dubrovskii
doaj +1 more source
Al–Cu intermetallic coatings processed by sequential metalorganic chemical vapour deposition and post-deposition annealing [PDF]
, 2012 Sequential processing of aluminum and copper followed by reactive diffusion annealing is used as a paradigm for the metalorganic chemical vapour deposition (MOCVD) of coatings containing intermetallic alloys.
Aloui, Lyacine +7 more
core +3 more sources
Ruhuna Journal of Science, 2020 Copper dithiocarbamate and aluminium dithiocarbamate were prepared and then characterized by infrared spectroscopy. The combination of the prepared precursors in different ratios was deposited on glass substrates using metal-organic chemical vapour ...
J. Damisa +4 more
doaj +1 more source
Scientific Reports, 2021 We investigated the process parameters of the high temperature MOCVD (HT-MOCVD) numerical model for the AlN growth based on CFD simulation using orthogonal test design.
Jiadai An +3 more
doaj +1 more source
Multilayer chromium based coatings grown by atmospheric pressure direct liquid injection CVD [PDF]
, 2009 There is a great interest for multilayer hard coatings because they exhibit enhanced properties resulting from their nanostructuration. Such coatings are frequently constituted of carbide and nitride and are generally deposited under very low pressure by
Delclos, Sophie +4 more
core +2 more sources