Results 41 to 50 of about 15,720 (226)
The results of a detailed investigation of electrically active defects in metal-organic chemical vapor deposition (MOCVD)-grown β-Ga2O3 (010) epitaxial layers are described.
Hemant Ghadi +8 more
doaj +1 more source
MOCVD Growth and Characterization of Be-Doped GaN
Beryllium has been considered a potential alternative to magnesium as a p-type dopant in GaN, but attempts to produce conductive p-GaN:Be have not been successful. Photoluminescence studies have repeatedly shown Be to have an acceptor level shallower than that of Mg, but deep Be defects and other compensating defects render most GaN:Be materials n-type
Benjamin McEwen +8 more
openaire +2 more sources
Low‐dimensional materials (0D, 1D, and 2D) exhibit unique electronic and physicochemical properties, enabling advanced nanoelectronic and optoelectronic devices. Mixed‐dimensional heterostructures combine these materials to enhance functionality.
Qaisar Alam +3 more
wiley +1 more source
Metal–organic chemical vapor deposition of p-type NiO and NiO/β-Ga2O3 PN diodes [PDF]
In this work, p-type NiO thin films were grown on (010) β-Ga2O3 substrates via metal–organic chemical vapor deposition (MOCVD). The growth conditions, including Ni(dmamb)2 (Ni precursor) molar flow rate, oxygen flow rate, and growth temperature, were ...
Dong Su Yu +5 more
doaj +1 more source
ZnO Nanowires by Chemical Bath Deposition: A Review on Doping and Functional Devices
This review reports the most recent and well‐established state‐of‐the‐art and scientific challenges related to the doping of ZnO nanowires by chemical bath deposition, encompassing native point and hydrogen‐related defects, as well as extrinsic dopants.
Clément Lausecker +3 more
wiley +1 more source
Physics‐driven advances in optical nanobiosensors for rapid, miniaturized, and point‐of‐care diagnostics for next‐generation decentralized and personalized healthcare based on sensor intelligence. ABSTRACT Public health emergencies and the escalating burden of chronic diseases necessitate a paradigm shift from centralized laboratory testing to rapid ...
Vishal Chaudhary +5 more
wiley +1 more source
Increased efficiencies on CdTe solar cells via luminescence down-shifting with excitation energy transfer between dyes [PDF]
The external quantum efficiencies of CdTe solar cells fabricated by the atmospheric pressure metal organic chemical vapour deposition (AP–MOCVD) method have been measured with one and two dye doped luminescence down-shifting (LDS) layers on top ...
S.J.C. Irvine +20 more
core +1 more source
High‐Q superscar modes in growth‐defined triangular GaN micro‐prism resonators enable strong exciton–photon coupling and room‐temperature polariton condensation, offering a scalable platform for integrated III‐nitride polariton devices. ABSTRACT Group III‐nitride semiconductors are regarded as key materials for realizing polariton devices operating at ...
Chan‐Young Sung +4 more
wiley +1 more source
31% European InGaP/GaAs/InGaAs Solar Cells for Space Application
We report a triple junction InGaP/GaAs/InGaNAs solar cell with efficiency of ~31% at AM0, 25 °C fabricated using a combined molecular beam epitaxy (MBE) and metal-organic chemical vapour deposition (MOCVD) processes.
Campesato Roberta +6 more
doaj +1 more source
Growth Model of MOCVD Polycrystalline ZnO [PDF]
A growth model for the low pressure chemical vapor deposition (LPCVD) of polycrystalline ZnO thin films is proposed. This model is based on experimental observations of the surface morphology and crystallographic orientations of the layers at different thicknesses and growth temperatures.
Nicolay, S, Faÿ, S, Ballif, C
openaire +2 more sources

