Results 41 to 50 of about 40,351 (278)
Characterization of highly-oriented ferroelectric Pb_xBa_(1-x)TiO_3 [PDF]
, 2005 Pb_xBa_(1-x)TiO_3 (0.2 ≾ x ≾ 1) thin films were deposited on single-crystal MgO as well as amorphous Si_3N_4/Si substrates using biaxially textured MgO buffer templates, grown by ion beam-assisted deposition (IBAD).
Boyd, David A. +2 more
core
Atomic Layer Deposition in Transistors and Monolithic 3D Integration
Advanced Functional Materials, EarlyView.Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu +5 more
wiley +1 more source
A feasibility study towards ultra-thin PV solar cell devices by MOCDV based on a p-i-n structure incorporating pyrite [PDF]
, 2010 FeSx layers were deposited onto aluminosilicate glass substrates over a temperature range of 180°C to 500°C using a horizontal AP-MOCVD reactor. Fe(CO)5 was used as the Fe source in combination with t-Bu2S2 or t-BuSH as S precursor to control the rate of
Barrioz, Vincent +5 more
core
Opportunities of Semiconducting Oxide Nanostructures as Advanced Luminescent Materials in Photonics
Advanced Materials, EarlyView.The review discusses the challenges of wide and ultrawide bandgap semiconducting oxides as a suitable material platform for photonics. They offer great versatility in terms of tuning microstructure, native defects, doping, anisotropy, and micro‐ and nano‐structuring. The review focuses on their light emission, light‐confinement in optical cavities, and
Ana Cremades +7 more
wiley +1 more source
Конденсированные среды и межфазные границыIn this study, for the search and development of new spintronic materials, thin films of Tm3Fe5O12 iron garnet were obtained by the metalorganic chemical vapor deposition (MOCVD) on single-crystal Gd3Ga5O12(111) – GGG and Y3Al5O12(111) – YAG substrates.
Maria N. Markelova +7 more
doaj +1 more source
Controlled MOCVD growth of Bi2Se3 topological insulator nanoribbons
, 2012 Topological insulators are a new class of materials that support topologically protected electronic surface states. Potential applications of the surface states in low dissipation electronic devices have motivated efforts to create nanoscale samples with
J R Petta +6 more
core +1 more source
Advanced Materials Interfaces, EarlyView.Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci +12 more
wiley +1 more source
Residual Stress Mechanisms in Aluminum Oxide Films Grown by MOCVD [PDF]
, 2009 Residual stresses in amorphous aluminium oxide films were investigated with in situ wafer curvature measurements. The films were deposited from aluminium tri-isopropoxide, on sapphire substrates.
Gleizes, Alain +4 more
core +2 more sources
Advanced Materials Interfaces, EarlyView.The gas‐phase decomposition of Al(acac)3 is investigated under inert, oxygen, and water‐containing conditions. Water is found to promote selective ligand removal and suppress hydrocarbon formation, while oxygen induces faster, less selective decomposition pathways.
Ilyas Adaköy +8 more
wiley +1 more source
Тонкие химические технологии, 2009 The algorithm was worked out, witch allows to define obtained GaAs-based layers characteristics and the most significant epitaxy process technological parameters on the base of half-empiric dependences, if MOCVD process carriage conditions are known.
A. A. Marmalyuk +2 more
doaj