Results 41 to 50 of about 2,908 (186)

MOCVD ZnO/Screen Printed Ag Back Reflector for Flexible Thin Film Silicon Solar Cell Application

International Journal of Photoenergy, 2014
We have prepared Ag back electrode by screen printing technique and developed MOCVD ZnO/screen printed Ag back reflector for flexible thin film silicon solar cell application.
Amornrat Limmanee, Patipan Krudtad, Sasiwimon Songtrai, Suttinan Jaroensathainchok, Taweewat Krajangsang, Jaran Sritharathikhun, Kobsak Sriprapha   +6 more
doaj   +1 more source

Chip‐Integrated Metasurface‐GaAsSb Nanowire Array Photodetectors for Single‐Pixel Polarimetric Imaging

Advanced Optical Materials, EarlyView.
A 2×2 multiplexed GaAsSb nanowire photodetector array integrated with L‐shaped metasurfaces is developed for miniaturized infrared polarimetry. Leveraging non‐radiating anapole states that facilitate near‐field enhancement, the device demonstrates strong polarization selectivity at 835 nm.
Longsibo Huang, Ziyuan Li, Yitao Yang, Yang Yu, Lei Xu, Li Li, Songqin Zhang, Han Wang, Wenwu Pan, Chaohao Chen, Weiqi Jin, Wen Lei, Lorenzo Faraone, Chennupati Jagadish, Lan Fu   +14 more
wiley   +1 more source

Achieving low sheet resistance in Si-doped AlN via low-temperature MOCVD

Applied Physics Express
A low-temperature (LT) metal-organic chemical vapor deposition (MOCVD) technique was developed for obtaining conductive Si-doped AlN thin films. An optimization of the deposition parameters, such as V/III ratio and trimethylaluminum flow rate, enabled ...
Swarnav Mukhopadhyay, Khush Gohel, Surjava Sanyal, Guangying Wang, Shubhra S. Pasayat   +4 more
doaj   +1 more source

Metal–organic chemical vapor deposition of 2D van der Waals materials—The challenges and the extensive future opportunities

APL Materials, 2020
The last decade has witnessed significant progress in two-dimensional van der Waals (2D vdW) materials research; however, a number of challenges remain for their practical applications.
Do Hee Lee, Yeoseon Sim, Jaewon Wang, Soon-Yong Kwon   +3 more
doaj   +1 more source

Oxygen‐Assisted MOCVD Growth of Monolayer PtSe2 Films With Bandgap Opening for Semiconducting FET Channels

Advanced Science, EarlyView.
Monolayer PtSe2 films are successfully grown via optimized MOCVD, achieving uniform coverage over a 1.5 cm × 1.5 cm area. Oxygen‐assisted growth effectively removes carbon impurities, ensuring high film quality. Array‐level FETs based on monolayer PtSe2 channels demonstrate low off‐current and high ION/IOFF ratios, highlighting the potential of PtSe2 ...
Yuseok Kim, Hee‐Soo So, Minseok Yoo, Saeyoung Oh, Dongyoung Kim, Minseung Gyeon, Min‐Kyung Jo, Gichang Noh, Tae Soo Kim, Min‐gyu Kim, Jeongwon Park, Hyun‐Jun Chai, Minsoo Kang, Suhyun Kim, Ayoung Ham, Jaehyun Lee, Jongsun Lim, Seungwoo Song, Joon Young Kwak, Seunghwan Seo, Chang‐Soo Lee, Chang Gyoun Kim, Kibum Kang   +22 more
wiley   +1 more source

Controlling graphene work function by doping in a MOCVD reactor

Heliyon, 2018
Here we demonstrate a new method for doping graphene using Metal Organic Chemical Vapor Deposition (MOCVD) reactor. The original undoped graphene was of a very high quality mounted on Si/SiO2 substrates, they were then doped in the MOCVD's reactor using ...
Chen Klein, Doron Cohen-Elias, Gabby Sarusi   +2 more
doaj   +1 more source

Full bandgap defect state characterization of β-Ga2O3 grown by metal organic chemical vapor deposition

APL Materials, 2020
The results of a detailed investigation of electrically active defects in metal-organic chemical vapor deposition (MOCVD)-grown β-Ga2O3 (010) epitaxial layers are described.
Hemant Ghadi, Joe F. McGlone, Christine M. Jackson, Esmat Farzana, Zixuan Feng, A. F. M. Anhar Uddin Bhuiyan, Hongping Zhao, Aaron R. Arehart, Steven A. Ringel   +8 more
doaj   +1 more source

Topological Materials and Related Applications

Advanced Electronic Materials, EarlyView.
This review covers topological materials—including topological insulators, quantum valley Hall and quantum spin Hall insulators, and topological Weyl and Dirac semimetals—as well as their most recent advancements in fields such as spintronics, electronics, photonics, thermoelectrics, and catalysis.
Carlo Grazianetti, Roberto Mantovan, Emanuele Longo, Harold J. W. Zandvliet, Pantelis Bampoulis, Yu Pan, Fan Li, Xia Wang, Payton Downey, Alessandro Molle   +9 more
wiley   +1 more source

Influence of Top Electrode Metal on Resistive Switching in Multilayer MOCVD MoS2 Memristors

Advanced Electronic Materials, EarlyView.
MoS2 memristors typically use evaporated noble metal electrodes. This study compares Pd, Ni, and Al electrodes and sputtered versus evaporated deposition. Pd is passive, while Ni damages MoS2, yielding poor switching. Sputtered Al enables reproducible ECM‐type switching with 95% yield, whereas evaporated Al forms an interfacial oxide that suppresses ...
Dennis Braun, Jing Liu, Vasilis A. Maroufidis, Hleb Fiadziushkin, Lukas Völkel, Jimin Lee, Sofía Cruces, Annika Grundmann, Ke Ran, Thorsten Wahlbrink, Holger Kalisch, Andrei Vescan, Joachim Mayer, Michael Heuken, Alwin Daus, Max C. Lemme   +15 more
wiley   +1 more source

Metal–organic chemical vapor deposition of p-type NiO and NiO/β-Ga2O3 PN diodes [PDF]

APL Electronic Devices
In this work, p-type NiO thin films were grown on (010) β-Ga2O3 substrates via metal–organic chemical vapor deposition (MOCVD). The growth conditions, including Ni(dmamb)2 (Ni precursor) molar flow rate, oxygen flow rate, and growth temperature, were ...
Dong Su Yu, Lingyu Meng, Vijay Gopal Thirupakuzi Vangipuram, Christopher Chae, Jinwoo Hwang, Hongping Zhao   +5 more
doaj   +1 more source