Results 61 to 70 of about 15,720 (226)

A Unified Flash Memory Platform for Mode‐Adaptive and Robust AI Computation

Advanced Science, Volume 13, Issue 56, 9 October 2026.
A unified AND‐type flash memory platform enables both transistor‐mode and capacitor‐mode computing‐in‐memory operations within the same device structure. By selectively switching the sensing mode through peripheral reconfiguration, the platform provides adaptable trade‐offs between computational accuracy, robustness, and energy efficiency for AI ...
Dayeon Yu, Hwiho Hwang, Byeongchan Oh, Junmo Lee, Shimeng Yu, Tae‐Hyeon Kim, Hyungjin Kim   +6 more
wiley   +1 more source

MOCVD Growth of Next-Generation III–V Semiconductor Devices: In Review

Photonics
Metal–organic chemical vapor deposition (MOCVD) is a crystal growth technique used to achieve high-purity thin films, especially III–V materials, for fabricating semiconductor devices.
Zoya Noor, Muhammad Usman, Shazma Ali, Anis Naveed, Amina Hafeez, Ahmed Ali   +5 more
doaj   +1 more source

Impact of Rapid Thermal Annealing on the Structural and Piezoelectric Properties of AlN Thin Films

Advanced Electronic Materials, Volume 12, Issue 19, 12 October 2026.
Aluminum nitride (AlN) is a biocompatible piezoelectric material suitable for energy harvesting in MEMS resonators. Through rapid thermal annealing, a threshold for CMOS‐compatible processes is established. AlN improved its crystallinity and enhanced the piezoelectric coefficient by ∼160%. Devices show an improvement in the electromechanical properties
Laura Mazón‐Maldonado, Lucía Nieto Sierra, M. Pilar Villar Castro, Fernando Lloret‐Vieira, Isidoro Ruíz‐García, Des Gibson, Hadi Heidari, Carlos García Núñez   +7 more
wiley   +1 more source

Kinetic study of MOCVD III-V quaternary antimonides

, 1999
The kinetics of MOCVD GaInAsSb and AlGaAsSb was studied by the growth rate as a function of growth temperature and partial pressure of III and V MO species.
Wei GY, Peng RW,Chinese Acad Sci,Shanghai Inst Met,Shanghai 200050,Peoples R China., Wang ZG, Wu W, Peng RW   +4 more
core  

Development and Research of the MOCVD Cleaning Robot

Machines
With the wide application of the gallium nitride (GaN) preparation method based on Metal–Organic Chemical Vapor Deposition (MOCVD), the automation of MOCVD equipment has become a research hotspot.
Yibo Ren, Zengwen Dong
doaj   +1 more source

Electrical properties of GaAs metal–oxide–semiconductor structure comprising Al2O3 gate oxide and AlN passivation layer fabricated in situ using a metal–organic vapor deposition/atomic layer deposition hybrid system

AIP Advances, 2015
This paper presents a compressive study on the fabrication and optimization of GaAs metal–oxide–semiconductor (MOS) structures comprising a Al2O3 gate oxide, deposited via atomic layer deposition (ALD), with an AlN interfacial passivation layer prepared ...
Takeshi Aoki, Noboru Fukuhara, Takenori Osada, Hiroyuki Sazawa, Masahiko Hata, Takayuki Inoue   +5 more
doaj   +1 more source

Preventing Plasma‐Induced Resist Hardening in Molybdenum Disulfide Transistors via Sacrificial Metal Mask Lithography

Small, Volume 22, Issue 56, 8 October 2026.
Photoresist (PR) residue significantly degrades the electrical performance of 2D semiconductors such as MoS2. In particular, the intrinsically ultrathin nature of these materials makes them highly susceptible to damage during conventional PR cleaning procedures.
Dahyeon Kim, Yanfeng Zhao, Sungyeon Kim, Seungchan Lee, Sangmin Eom, Tae Yeon Kim, Hyun Seok Lee, Joonki Suh, Byungjo Kim, Myungsoo Kim   +9 more
wiley   +1 more source

MOCVD-grown InAs/InP quantum dot lasers with low threshold current_Dataset

“MOCVD-grown InAs/InP quantum dot lasers with low threshold current” dataThe dataset includes Excel files with the raw data for each figure in the manuscript.Figure 2(f) Room-temperature PL spectra of capped QDs.Figure 4(a) Light–current (L–I ...
Haotian Zeng (7099877), Hui Jia (7101800), Zhao Yan (19084907), Bogdan Ratiu (19083593), Mingchu Tang (6764054), Parco Wong (20974479), Jae-Seong Park (6761951), Shangfeng Liu (19085327), Fiona Wang (17035305), Peter Smowton (19078616), Huiyun Liu (6778832), Qiang Li (19082876)   +11 more
core   +1 more source

Ab initio study for molecular-scale adsorption, decomposition and desorption on AlN surfaces during MOCVD growth

Scientific Reports, 2020
Since AlGaN offers new opportunities for the development of the solid state ultraviolet (UV) luminescence, detectors and high-power electronic devices, the growth of AlN buffer substrate is concerned.
Jiadai An, Xianying Dai, Runqiu Guo, Lansheng Feng, Tianlong Zhao   +4 more
doaj   +1 more source

Direct Sputtering Deposition of a Zn1−xGexOx+1 Buffer Layer With a Controllable Conduction Band for Cd‐Free Cu(In,Ga)S2 Solar Cells

Solar RRL, Volume 10, Issue 18, 28 September 2026.
This work presents the development of n‐type Zn1−xGexOx+1 using radiofrequency magnetron sputtering to suppress interface recombination at the heterojunction of Cu(In,Ga)S2 (CIGS) solar cells. The solar cell device with the Zn1−xGexOx+1 buffer layer directly deposited on CIGS absorbers demonstrates a conversion efficiency comparable to that of a device
Yota Suzuki, Hiromu Kobayashi, Yuta Yoshino, Takahito Nishimura   +3 more
wiley   +1 more source