Results 61 to 70 of about 40,351 (278)

Metal–organic chemical vapor deposition of p-type NiO and NiO/β-Ga2O3 PN diodes [PDF]

APL Electronic Devices
In this work, p-type NiO thin films were grown on (010) β-Ga2O3 substrates via metal–organic chemical vapor deposition (MOCVD). The growth conditions, including Ni(dmamb)2 (Ni precursor) molar flow rate, oxygen flow rate, and growth temperature, were ...
Dong Su Yu, Lingyu Meng, Vijay Gopal Thirupakuzi Vangipuram, Christopher Chae, Jinwoo Hwang, Hongping Zhao   +5 more
doaj   +1 more source

Protective Alumina Coatings by Low Temperature Metalorganic Chemical Vapour Deposition [PDF]

, 2007
Alumina thin films were processed from aluminium tri-iso-propoxide in a horizontal, with N2 as a carrier gas, occasional addition of water in the gas phase, deposition temperature in the range 350-700°C, total pressure 0.67 kPa (2 kPa when water was used)
Alphonse, Pierre, Gleizes, Alain, Perisanu, S., Samélor, Diane, Sovar, Maria-Magdalena, Vahlas, Constantin   +5 more
core   +1 more source

Influence of Top Electrode Metal on Resistive Switching in Multilayer MOCVD MoS2 Memristors

Advanced Electronic Materials, EarlyView.
MoS2 memristors typically use evaporated noble metal electrodes. This study compares Pd, Ni, and Al electrodes and sputtered versus evaporated deposition. Pd is passive, while Ni damages MoS2, yielding poor switching. Sputtered Al enables reproducible ECM‐type switching with 95% yield, whereas evaporated Al forms an interfacial oxide that suppresses ...
Dennis Braun, Jing Liu, Vasilis A. Maroufidis, Hleb Fiadziushkin, Lukas Völkel, Jimin Lee, Sofía Cruces, Annika Grundmann, Ke Ran, Thorsten Wahlbrink, Holger Kalisch, Andrei Vescan, Joachim Mayer, Michael Heuken, Alwin Daus, Max C. Lemme   +15 more
wiley   +1 more source

Growth of TiO2 thin films by AP-MOCVD on stainless steel substrates for photocatalytic applications [PDF]

, 2007
TiO2 thin films were deposited under atmospheric pressure by MOCVD in the temperature range 400–600 °C on stainless steel and Si(100) substrates. Titanium tetraisopropoxide (TTIP) was used as Ti and O source.
Duminica, Florin-Daniel, Hausbrand, R., Maury, Francis   +2 more
core   +4 more sources

Hydrogen‐Induced Electronic Modulation at MoS2/SiO2 Interfaces

Advanced Electronic Materials, EarlyView.
Hydrogen is shown to tune the conductivity of monolayer MoS2 in protonic electrochemical random‐access memories (ECRAMs). Combined atomistic simulations and device measurements reveal concentration‐dependent n‐type doping when the SiO2 surface is fully saturated, enabling hydrogen to adsorb on MoS2 or incorporate into sulfur vacancies.
Vasileios Fotopoulos, Mantao Huang, Longlong Xu, Matthäus Siebenhofer, Xudong Zheng, Jing Kong, Bilge Yildiz   +6 more
wiley   +1 more source

31% European InGaP/GaAs/InGaAs Solar Cells for Space Application

E3S Web of Conferences, 2017
We report a triple junction InGaP/GaAs/InGaNAs solar cell with efficiency of ~31% at AM0, 25 °C fabricated using a combined molecular beam epitaxy (MBE) and metal-organic chemical vapour deposition (MOCVD) processes.
Campesato Roberta, Tukiainen Antti, Aho Arto, Gori Gabriele, Isoaho Riku, Greco Erminio, Guina Mircea   +6 more
doaj   +1 more source

Elastic and inelastic tunneling characteristics of AIAs/GaAs heterojunctions [PDF]

, 1984
N/
Burnham, R. D., Collins, R. T., Lambe, J., McGill, T. C.   +3 more
core  

Nanocrystalline chromium-based coatings deposited by DLI-MOCVD under atmospheric pressure from Cr(CO)6 [PDF]

, 2006
Nanocrystalline original Cr-based coatings were grown under atmospheric pressure by Direct Liquid Injection Metal Organic Chemical Vapor Deposition (DLI-MOCVD).
Douard, Aurélia, Maury, Francis
core   +2 more sources

Low‐Dimensional Materials and Van Der Waals Heterostructures for Energy Application: A Comprehensive Review

ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.
Low‐dimensional materials (0D, 1D, and 2D) exhibit unique electronic and physicochemical properties, enabling advanced nanoelectronic and optoelectronic devices. Mixed‐dimensional heterostructures combine these materials to enhance functionality.
Qaisar Alam, Sajjad Ali, Pir Muhammad Ismail, ABM Sharif Hossain   +3 more
wiley   +1 more source

Surface and electronic structure of MOCVD-grown Ga(0.92)In(0.08)N investigated by UV and X-ray photoelectron spectroscopies [PDF]

, 2004
The surface and electronic structure of MOCVD-grown layers of Ga(0.92)In(0.08)N have been investigated by means of photoemission. An additional feature at the valence band edge, which can be ascribed to the presence of In in the layer, has been revealed.
B.A. Orlowski, B.J. Kowalski, Beach, Bellaiche, Bermudez, Bermudez, Butcher, Carin, Chen, Chen, Dhesi, Ding, E. Lusakowska, F. Mirabella, Grzegory, Guo, Hunt, I. Grzegory, I.A. Kowalik, J. Ghijsen, J. Kanski, J. Sadowski, Kowalski, Kowalski, Leszczynski, M. Leszczynski, Maruyama, McCluskey, Moulder, Nakamura, Nakamura, O'Donnell, Osamura, P. Perlin, Parker, Pearton, Pereira, Pereira, Perlin, Plucinski, Prabhakaran, Pugh, R.J. Iwanowski, Ryan, S. Porowski, Strasser, Teles, Van de Walle, Vogel, Wang, Watkins, Wetzel, Wright   +52 more
core   +1 more source