Results 81 to 90 of about 15,720 (226)
MOCVD of Cobalt Oxide Using Co-Actylacetonate As Precursor: Thin Film Deposition and Study of Physical Properties [PDF]
Журнал нано- та електронної фізики, 2011 Metal Organic Chemical Vapor Deposition (MOCVD) is the deposition method of choice for achieving conformal uniform (composition and thickness) continuous thin films over the micron geometry topology necessary for implementing advanced devices. Thin films
S.M. Jogade +3 more
doaj
Combined MOCVD and MBE growth of GaN on porous SiC
, 2018 GaN films have been grown homoepitaxially by MOCVD on MBE-grown GaN template layers, using both porous and nonporous SiC substrates. The effect of the porous SiC substrates on dislocations in the MBE and MOCVD GaN layers has been studied using TEM and x ...
D. D. Koleske (5385788) +4 more
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, 2011 Rare earth oxide thin films are of interest for several purposes including optical coatings, catalytic agents and/or supports, protective coatings, etc.
R Lo Nigro +4 more
core
High quality GaN-based LED epitaxial layers grown in a homemade MOCVD system
, 2011 A homemade7×2 inch MOCVD system is presented. With this system, high quality GaN epitaxial layers, InGaN/GaN multi-quantum wells and blue LED structural epitaxial layers have been successfully grown.
Hongling Xiao +16 more
core +1 more source
, 2012 AlGaN基的深紫外LED在消毒杀菌、生物医学、保密通信、紫外固化等领域具有广泛的应用前景。高质量、低位错密度的AlN模板是实现深紫外LED高效率发光的重要基础。为了降低A1N模板的位错密度,有研究组在微米级(2～5μm)的沟槽型蓝宝石衬底上MOCVD外延A1N模板的技术,通过A1N材料的侧向外延,有效的降低了穿透位错密度。但是由于Al原子的表面粘附性大,迁移率低,侧向合并困难,对于微米级图形需要生长较厚的A1N(10～20μm)才能完全合并,导致外延时间代价较大。
吴奎 +8 more
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Experiments and their analysis for self-assembly growth of GaN quantum dots via MOCVD
, 2005 In recent years, growth of GaN-based materials-related quantum dots has become a hot topic in semiconductor materials research. Considerable efforts have been devoted to growth of self-assembled quantum dots of GaN-based materials via MOCVD (Metal ...
Meng T +3 more
core
, 1999 We report on the growth of high-quality cubic phase InGaN on GaAs by MOCVD. The cubic InGaN layers are grown on cubic GaN buffer layers on GaAs (001) substrates. The surface morphology of the films are mirror-like.
Yang H +5 more
core
Beilstein Journal of Nanotechnology, 2019 In the present study the advantageous pulsed-injection metal organic chemical vapour deposition (PI-MOCVD) technique was used for the growth of nanostructured La1−xSrxMnyO3±δ (LSMO) films on ceramic Al2O3 substrates.
Rasuole Lukose +12 more
doaj +1 more source
, 1995 GaN是重要的蓝光半导体材料。以TMGa和BH_3为源在(0112)α-Al_2O_3衬底上成功的用MOCVD方法生长了GaN外延层,研究了GaN的表面形貌与结晶学、电学和光学特性。GaN(2110)面的双晶回摆曲线衍射峰的最小半高宽已达16 ...
陆大成 +7 more
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