Results 81 to 90 of about 40,351 (278)

Wafer‐Scale Single‐Crystal Boron Nitride: Synthesis and Integration in 2D Electronics

Advanced Materials Interfaces, Volume 13, Issue 9, 5 May 2026.
This Review highlights recent breakthroughs in wafer‐scale hBN synthesis and its integration into next‐generation 2D electronics. We analyze growth kinetics, epitaxial strategies, and stacking‐sequence control while correlating material quality with device performance.
Jaewon Wang, Soon‐Yong Kwon
wiley   +1 more source

MOCVD growth mechanisms of ZnO nanorods [PDF]

, 2010
ZnO is a promising material for the fabrication of light emitting devices. One approach to achieve this goal is to use ZnO nanorods because of their expected high crystalline and optical quality.
Ferret, Pierre, Feuillet, Guy, Jouneau, Pierre-Henri, Perillat-Merceroz, Guillaume, Rosina, Milan, Thierry, Robin   +5 more
core   +5 more sources

High‐Throughput Screening of REBCO Superconducting Thin Films Fabricated Via Combinatorial Inkjet Printing and TLAG Process

Advanced Materials Technologies, Volume 11, Issue 9, 6 May 2026.
A methodological framework is presented for combinatorial REBCO thin films fabricated by drop‐on‐demand inkjet printing with controlled Rare Earth composition gradients. Automated, synchrotron‐based, and local characterization techniques produce comprehensive property maps that correlate composition and TLAG process parameters with superconducting ...
Emma Ghiara, Zeyu Wu, Mahel Voulhoux, Ona Mola Bertran, Vittorio Bertini, Carla Torres, Aiswarya Kethamkuzhi, Guilherme Theophilo Telles, Victor Fuentes, Elzbieta Pach, Cornelia Pop, Eduardo Solano, Kapil Gupta, Takanobu Kiss, Xavier Obradors, Teresa Puig   +15 more
wiley   +1 more source

MOCVD Growth of Next-Generation III–V Semiconductor Devices: In Review

Photonics
Metal–organic chemical vapor deposition (MOCVD) is a crystal growth technique used to achieve high-purity thin films, especially III–V materials, for fabricating semiconductor devices.
Zoya Noor, Muhammad Usman, Shazma Ali, Anis Naveed, Amina Hafeez, Ahmed Ali   +5 more
doaj   +1 more source

Deposition of tin oxide, iridium and iridium oxide films by metal-organic chemical vapor deposition for electrochemical wastewater treatment [PDF]

, 2008
In this research, the specific electrodes were prepared by metal-organic chemical vapor deposition (MOCVD) in a hot-wall CVD reactor with the presence of O2 under reduced pressure.
A Fernandes, A Morão, AV Diniz, CA Martínez-Huitle, Ch Comminellis, Ch Comninellis, Ch Comninellis, E Weiss, E Weiss, F Maury, François Senocq, G Lissens, G Siné, G Vercesi, Hugues Vergnes, J Grimm, JB Hoke, JM Kesselman, Kejvalee Pruksathorn, L Massot, M Panizza, M Sathish, MB Amjoud, P Duverneuil, Patrick Duverneuil, S Ammar, S Stucki, Somsak Damronglerd, Songsak Klamklang, X Chen, Z Wu   +30 more
core   +2 more sources

Magnetron Sputtering Synthesis of La‐Doped BiFeO3 Thin Films and Enhanced Exchange Bias in CoFeB/Bi1‐xLaxFeO3 Heterostructures

Advanced Physics Research, Volume 5, Issue 5, May 2026.
This study explores the epitaxial growth of high‐quality La‐doped BiFeO3 (BLFO) thin films at 550 °C using magnetron sputtering. The films exhibit good ferroelectric properties and low leakage current. A BLFO/CoFeB heterostructure is constructed, achieving an exchange bias field exceeding the coercive field at room temperature.
Zhiqin Zhou, Ligang Bai, Chen Qi, Xiaoyang Lin, Ivair Aparecido dos Santos, Gustavo Sanguino Dias, Luiz Fernanado Cótica, Weisheng Zhao, Yanxue Chen, Tianxiao Nie, Guodong Wei   +10 more
wiley   +1 more source

Development and Research of the MOCVD Cleaning Robot

Machines
With the wide application of the gallium nitride (GaN) preparation method based on Metal–Organic Chemical Vapor Deposition (MOCVD), the automation of MOCVD equipment has become a research hotspot.
Yibo Ren, Zengwen Dong
doaj   +1 more source

Electrical properties of GaAs metal–oxide–semiconductor structure comprising Al2O3 gate oxide and AlN passivation layer fabricated in situ using a metal–organic vapor deposition/atomic layer deposition hybrid system

AIP Advances, 2015
This paper presents a compressive study on the fabrication and optimization of GaAs metal–oxide–semiconductor (MOS) structures comprising a Al2O3 gate oxide, deposited via atomic layer deposition (ALD), with an AlN interfacial passivation layer prepared ...
Takeshi Aoki, Noboru Fukuhara, Takenori Osada, Hiroyuki Sazawa, Masahiko Hata, Takayuki Inoue   +5 more
doaj   +1 more source

Mie-resonances, infrared emission and band gap of InN

, 2003
Mie resonances due to scattering/absorption of light in InN containing clusters of metallic In may have been erroneously interpreted as the infrared band gap absorption in tens of papers.
A. Kasic, A. Kavokin, A. Vasson, B. Monemar, C. Stampfl, D. D. Solnyshkov, D. D. Nolte, G. Mie, H. Amano, I. Tamm, J. Leymarie, J. C. Maxwell-Garnett, K. Shimono, L. Tansley, L. D. Landau, P. S. Kop’ev, R. Y. Koyama, S. V. Ivanov, S. V. Ivanov, T. Inushima, T. V. Shubina, U. Kreibig, V. A. Vekshin, V. N. Jmerik, V. V. Sobolev   +24 more
core   +1 more source

N-doped TiO2 coatings grown by atmospheric pressure MOCVD for visible light-induced photocatalytic activity [PDF]

, 2007
N-doped TiO2 films were deposited by atmospheric pressure CVD from titanium tetra-isopropoxide (TTIP) and N2H4 as reactive gas in the temperature range 400–500 °C on various substrates.
Duminica, Florin-Daniel, Hausbrand, R., Maury, Francis   +2 more
core   +3 more sources