Results 71 to 80 of about 40,351 (278)

ZnO Nanowires by Chemical Bath Deposition: A Review on Doping and Functional Devices

Electron, EarlyView.
This review reports the most recent and well‐established state‐of‐the‐art and scientific challenges related to the doping of ZnO nanowires by chemical bath deposition, encompassing native point and hydrogen‐related defects, as well as extrinsic dopants.
Clément Lausecker, Adrien Baillard, Estelle Appert, Vincent Consonni   +3 more
wiley   +1 more source

Wet‐Transferred MoS2 on Passivated InP: A Van der Waals Heterostructure for Advanced Optoelectronic Applications

physica status solidi (RRL) – Rapid Research Letters, Volume 19, Issue 5, May 2025.
This study presents a photodetector based on atomically thin MoS2 on an InP substrate, forming an n‐MoS2/p‐InP type‐II staggered heterojunction. The device exhibits excellent rectifying properties with an ideality factor of 1.57 and achieves a peak photoresponsivity of 960 mA W−1, while MoS2 provides stable passivation for InP. III–V semiconductors are
Dong Hwi Choi, Jae Hyeop Lee, Min Su Kim, Jaeseo Park, Jun Oh Kim, Teli Aviraj Mahadev, Beknalkar Sonali Ajay, Hong Hyuk Kim, Jae Cheol Shin   +8 more
wiley   +1 more source

Engineered surface strategies to manage dental implant‐related infections

Periodontology 2000, EarlyView.
Abstract When exposed to the oral environment, dental implants, like natural surfaces, become substrates for microbial adhesion and accumulation, often leading to implant‐related infections—one of the main causes of implant failure. These failures impose significant costs on patients, clinicians, and healthcare systems.
João Gabriel S. Souza, Bruna E. Nagay, Rodrigo Martins, Martinna Bertolini, Jamil A. Shibli, Conrado Aparicio, Magda Feres, Valentim A. R. Barão   +7 more
wiley   +1 more source

3 kV AlN Schottky Barrier Diodes on Bulk AlN Substrates by MOCVD [PDF]

, 2023
Dinusha Herath Mudiyanselage, Dawei Wang, Ziyi He, Bingcheng Da, Houqiang Fu   +4 more
openalex   +1 more source

MOCVD and ferromagnetic resonance of epitaxial Lu3Fe5O12 films for high-frequency applications

Конденсированные среды и межфазные границы
Objectives: The production of thin films of rare earth iron garnets with a narrower ferrimagnetic resonance (FMR) linewidth is extremely important in the development of spintronic materials.
Abduvosit A. Hafizov, Maria N. Markelova, Ruoxuan Gu, Igor E. Graboy, Vadim A. Amelichev, Dmitry A. Volkov, David A. Gabrielyan, Ansar R. Safin, Sergey A. Nikitov, Andrey R. Kaul   +9 more
doaj   +1 more source

Sub-nanometer ultrathin epitaxy of AlGaN and its application in efficient doping

Light: Science & Applications, 2022
A desorption-tailoring strategy is demonstrated to steadily prepare self-assembled p-AlGaN superlattices with sub-nanometer ultrathin barriers by MOCVD, which juggle the hole concentration and transport.
Jiaming Wang, Mingxing Wang, Fujun Xu, Baiyin Liu, Jing Lang, Na Zhang, Xiangning Kang, Zhixin Qin, Xuelin Yang, Xinqiang Wang, Weikun Ge, Bo Shen   +11 more
doaj   +1 more source

MOCVD synthesis of compositionally tuned topological insulator nanowires

, 2014
Device applications involving topological insulators (TIs) will require the development of scalable methods for fabricating TI samples with sub-micron dimensions, high quality surfaces, and controlled compositions.
Alegria, L. D., Petta, J. R., Yao, N.
core   +1 more source

Investigation of Structural, Mechanical and Electrochemical Properties of Temperature‐Dependent Dual AlN/TiAlN Coating Synthesized by CVD Process

Advanced Materials Interfaces, Volume 13, Issue 9, 5 May 2026.
This study investigates thermally CVD‐deposited AlN/TiAlN dual‐layer coatings over a Si substrate, focusing on the temperature‐dependent process‐structure relationship. Systematic characterization reveals that a dense AlN interlayer combined with an optimally deposited TiAlN top layer provides enhancement in mechanical strength, tribological stability,
Soham Das, Abhishek Kundu, Debjyoti Sahu, Nikhil Kumar, Spandan Guha   +4 more
wiley   +1 more source

Role of hydrogen carrier gas on the growth of few layer hexagonal boron nitrides by metal-organic chemical vapor deposition

AIP Advances, 2017
Few layer hexagonal boron nitride (h-BN) films were grown on 2-inch sapphire substrates by using metal-organic chemical vapor deposition (MOCVD) with two different carrier gases, hydrogen (H2) and nitrogen (N2 ...
Dong Yeong Kim, Nam Han, Hokyeong Jeong, Jaewon Kim, Sunyong Hwang, Jong Kyu Kim   +5 more
doaj   +1 more source

Polarity in GaN and ZnO: Theory, measurement, growth, and devices [PDF]

, 2016
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Rev.
Akyol F., Akyol F., Alloing B., Als-Nielsen J., Ambacher O., Ambacher O., Bechstedt F., Bernardini F., Bowen D., Brillson L. J., Brubaker M. D., Brubaker M. D., Consonni V., Dal Corso A., de la Mata M., den Hertog M. I., Dreyer C. E., Duff A. I., Edgar J. H., Egerton R. F., Fiolhais C., Hestroffer K., Hestroffer K., Hirsch P., Huang D., Jasinski J., Koblmüller G., Kong X., Kuzmik J., Largeau L., Largeau L., Lautenschlaeger S., Lautenschlaeger S., Marchand H., Mariano A. N., Masui H., Morkoç H., Nishikawa S., Northrup J., Nye J. F., Palacios T., Parr R. G., Perillat-Merceroz G., Posternak M., Rouviere J. L., Sallet V., Seelmann-Eggebert M., She G. W., Shinohara K., Smorchkova I. P., Sonoda S., Spence J. C. H., Stringfellow G. B., Sumiya M., Sumiya M., Sumiya M., Sumiya M., Tian Z. R., Trampert A., Van Hove M. A., Wagner M. R., Wang X., Wang X., Won D., Zheng X., Zywietz T.   +65 more
core   +3 more sources