Results 71 to 80 of about 15,720 (226)

Triple Space‐Polarization On–Off‐Key Modulation With AlN‐Based Tri‐Focal Metalens

Nanophotonics, Volume 15, Issue 18, 25 September 2026.
An AlN tri‐focal metalens made of high‐temperature‐annealed AlN by integrating zone‐plate null rings into a polarization‐selective bifocal metalens. The incident light will be focused into two or three foci on the focal plane, each with a distinct polarization state.
Zhi‐Yan Lin, Chen‐Yi Tsai, Bo‐Yi Chen, Huang‐Yu Wei, Hsiao‐Hsuan Yang, Yuh‐Jen Cheng, Hideto Miyake, Chia‐Yen Huang   +7 more
wiley   +1 more source

Highly conformal and high-ionic conductivity thin-film electrolyte for 3D-structured micro batteries: Characterization of LiPON film deposited by MOCVD method

AIP Advances, 2017
This paper reports a lithium phosphorus oxynitride (LiPON) thin-film electrolyte deposited using a metalorganic-chemical vapor deposition (MOCVD) method for 3D-structured micro batteries.
Takashi Fujibayashi, Yusuke Kubota, Katsuhiko Iwabuchi, Naoki Yoshii   +3 more
doaj   +1 more source

Combined MOCVD and MBE growth of GaN on porous SiC

, 2003
GaN films have been grown homoepitaxially by MOCVD on MBE-grown GaN template layers, using both porous and nonporous SiC substrates. The effect of the porous SiC substrates on dislocations in the MBE and MOCVD GaN layers has been studied using TEM and x ...
Ashutosh Sagar, D. D. Koleske, T. S. Kuan, C. K. Inoki, R. M. Feenstra   +4 more
core   +1 more source

Single-step Au-catalysed synthesis and microstructural characterization of core–shell Ge/In–Te nanowires by MOCVD

Materials Research Letters, 2018
We report on the self-assembly of core–shell Ge/In–Te nanowires (NWs) on single crystal Si substrates by Metalorganic Chemical Vapour Deposition (MOCVD), coupled to the Vapour–Liquid–Solid (VLS) mechanism, catalysed by Au nanoparticles (NPs). The NWs are
Raimondo Cecchini, Simone Selmo, Claudia Wiemer, Enzo Rotunno, Laura Lazzarini, Marta De Luca, Ilaria Zardo, Massimo Longo   +7 more
doaj   +1 more source

GaInAs camel transistors grown by MOCVD

Electronics Letters, 1989
Hot electron camel transistors have been fabricated for the first time in GaInAs. The camel structures were grown by MOCVD. The thickness of the base layer is 40 nm, the emitter barrier height is 0·55 eV, the collector barrier height is 0·25 eV, and the base transport factor is 0·6 at room temperature.
MARSO, Michel, Zwinge, G., Beneking, H.
openaire   +2 more sources

A Study on the TiN thin films deposited by Thermal MOCVD and DC pulsed PA-MOCVD

, 2001
유기화합물(TDEAT;Ti[N(C2H5)2]4)과 NH3를 이용하여 thermal MOCVD와 dc pulsed plasma assisted MOCVD(PA-MOCVD)인 2종류의 TiN박막을 증착하여 비교하였다. TiN박막의 특성분석은 XRD, AES, FE-SEM, α-step과 XPS로 연구하였다.
이영섭, 박용균, 이태수, 조동율, 이성재, 천희곤   +5 more
core   +1 more source

Toward ferroelectric AlN/GaN heterostructures and sputtered III-N thin films with metal organic chemical vapor deposition-like texture

Communications Materials
Merging III-N-technology and wurtzite ferroelectricity could enable novel devices with enhanced functionality, for instance, harsh environment ferroelectric non-volatile memories and neuromorphic components.
Georg Schönweger, Niklas Wolff, Md Redwanul Islam, Isabel Streicher, Stefano Leone, Lorenz Kienle, Simon Fichtner   +6 more
doaj   +1 more source

Carbon-Related Defects as a Source for the Enhancement of Yellow Luminescence of Unintentionally Doped GaN

Nanomaterials, 2018
Yellow luminescence (YL) of unintentionally doped GaN (u-GaN) peaking at about 2.2 eV has been investigated for decades, but its origin still remains controversial. In this study, ten u-GaN samples grown via metalorganic chemical vapor deposition (MOCVD)
Feng Liang, Degang Zhao, Desheng Jiang, Zongshun Liu, Jianjun Zhu, Ping Chen, Jing Yang, Shuangtao Liu, Yao Xing, Liqun Zhang, Mo Li, Yuantao Zhang, Guotong Du   +12 more
doaj   +1 more source

MOCVD-Based YBCO-Coated Conductors

, 2004
Metalorganic chemical vapor deposition (MOCVD) is a well-developed deposition process that shows great promise for scaling up the production of high-temperature superconductors (HTSs) to quickly fabricate useful lengths of superconducting tapes and wires.
V. Selvamanickam, Y. Chen, Y. Xie, J. Reeves   +3 more
core   +1 more source

MOCVD AlxGa1−xAs solar cells

, 1986
MOCVD AlxGa1−xAs solar cells are reviewed. A summary status report of the past three year's research is presented. Status of the MOCVD crystal growth technology in relation to the optimization of the AlxGa1−xAs solar cells is assessed.
Prakash, Hari
core   +1 more source