Results 71 to 80 of about 2,908 (186)

Evolution of the Electronic Gap of Directly Synthesized Versus Mechanically Transferred WS2 Monolayer to Multilayer Films

Advanced Materials Interfaces
The electronic properties of 2D materials play a critical role in determining their potential for device applications. Despite rapid developments in 2D semiconductors, studies of fundamental electronic parameters, including the electronic gap and ...
Xu He, Jinpeng Tian, Wenjing Wu, Satya Butler, Shengxi Huang, Saien Xie, Antoine Kahn   +6 more
doaj   +1 more source

The estimation of possibility of the using gas mixer for obtaining sharper MOCVD grown heterojunctions

Тонкие химические технологии, 2014
In this paper, we investigate the possibility of using gas mixer precursor for MOCVD to get sharper heterojunctions InxGa1-xAs, InxGa1-xAs и InxAl1-xAs.
A. A. Gorskiy
doaj  

GROWTH AND PROPERTIES OF STACKED SELF-ASSEMBLED In0.5Ga0.5As QUANTUM DOTS

Jurnal Penelitian Fisika dan Aplikasinya, 2016
Self-assembled In0.5Ga0.5As quantum dots (QDs) were grown using metal-organic chemical vapor deposition (MOCVD) on GaAs (100) substrate with different number of stacking QDs layers.
Didik Aryanto, Zulkafli Othaman, Abd. Khamim Ismail   +2 more
doaj  

Metal-Organic Chemical Vapor Deposition in a Transmission Electron Microscope [PDF]

BIO Web of Conferences
Jacobsson Daniel, Tornberg Marcus, Maliakkal Carina B., Wallenberg Reine, Dick Kimberly A.   +4 more
doaj   +1 more source

MOCVD Growth of κ‑Ga₂O₃ on Al-Rich Al _<i>x</i> Ga_1-<i>x</i> N Templates: Phase Diagram and Microstructural Evolution. [PDF]

Cryst Growth Des
Ngo KD, Muazzam UU, Nandi A, Anandan SK, Yin Y, Cherns D, Kappers MJ, Oliver RA, Smith MD, Kuball M.   +9 more
europepmc   +1 more source

Enhancing film bulk acoustic resonators performance by optimizing AlN seed layer crystallinity and polarity alignment. [PDF]

Nat Commun
Yang T, Xu Q, Wang Y, Cai Y, Li H, Zheng Y, Zeng M, Qu J, Li L, Gao C, Gu X, Lin B, Guo S, Lei C, Liu S, Sun C.   +15 more
europepmc   +1 more source

Over 1.65 GW cm^-2 sr^-1 brightness 590 nm yellow second-harmonic generation in MOCVD-grown high-strain InGaAs/GaAs quantum well VECSEL. [PDF]

Light Sci Appl
Zhang Z, Zhan W, Xiao Y, Luo C, Zhou H, Yang W, Cheng Y, Yu H, Li Q, Li X, Zhang C, Wang J.   +11 more
europepmc   +1 more source

Low Temperature MOCVD Synthesis of High-Mobility 2D InSe. [PDF]

Small
Günkel R, Maßmeyer O, Stein M, Bräumer K, Rodriguez RS, Anders D, Littmann JH, Anhäuser S, Ojaghi Dogahe B, Bergmann M, Solanki M, Langlotz NF, Glowatzki J, Belz J, Beyer A, Witte G, Chatterjee S, Volz K.   +17 more
europepmc   +1 more source

Substrate-field-modulated remote-van der Waals hybrid epitaxy in transition metal dichalcogenide heterostructures. [PDF]

Nano Converg
Handriani LS, Jang S, Kim Y, Yun H, Jeong DY, Park H, Gao Z, Jang JI, Park WI.   +8 more
europepmc   +1 more source

Bandgap Engineering of Ga₂O₃ by MOCVD Through Alloying with Indium. [PDF]

Nanomaterials (Basel)
Islam MM, Hernandez A, Appuhami H, Banerjee A, Uberuaga BP, Selim FA.   +5 more
europepmc   +1 more source