Results 91 to 100 of about 15,720 (226)

Gas Phase Reactions in Horizontal MOCVD Reactors

, 1987
We have applied kinetic simulation to MOCVD chemistry in a horizontal MOCVD reactor. Both chemical reactions and material diffusion are considered. For trimethylgallium decomposition, concentrations of chemical species reach their steady state values ...
J. Komeno, Hitoshi Tanaka
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Growth of c-oriented ZnO films on (001) SMO3 substrates by MOCVD

, 2008
The growth direction of ZnO thin films grown by metal-organic chemical vapor deposition (MOCVD) is modulated by pretreatment of (001) SMO3 (STO) substrates. ZnO films show a-oriented smooth surface with epitaxial relationship of ZnO// STO on as-received
Liu XL, Liu GH, Jia CH, Chen YH, Yang SY, Wang ZG, Chen YH Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. E-mail Address: yhchen@red.semi.ac.cn   +6 more
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Characterization of Nanosized Al2O3 Powder Synthesized by Thermal-Assisted MOCVD and Plasma-Assisted MOCVD [PDF]

Iranian Journal of Chemistry & Chemical Engineering, 2011
Nanosized Al2O3 powder is synthesized by thermal Metal Organic Chemical Vapor Deposition (MOCVD)combined withplasma. The effects of reaction temperature, pressure, Al(CH3)3 (TMA) concentration and reactant gases (CO2 and O2) on the characteristics of the
Han Shizhong, Chen Jinghui, Zheng Peng,, Qing Pang   +3 more
doaj  

MOCVD of Group III Chalcogenide Compound Semiconductors

, 1993
A review is presented of recent advances in the metal-organic chemical vapor deposition (MOCVD) of thin films of group III-chalcogenides. The deposition of thermodynamic phases of composition ME and M2E3 (M = Ga, In; E = S, Se.
Andrew R. Barron
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Future Aspects of MOCVD Technology for Epitaxial Growth of Semiconductors

, 2019
This chapter explores the characteristics of metalorganic chemical vapor deposition (MOCVD) and discusses possible future trends in the development and application of this epitaxial materials technology to future electronic and optoelectronic devices. It
Li, Xiaohang, Ryou, J.-H., Dupuis, R.D., Detchprohm, T.   +3 more
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Real‐Time Monitoring of 2D TMDC MOCVD: An In Situ Spectroscopic Reflectance Approach

Advanced Materials Interfaces
Metal–organic chemical vapor deposition (MOCVD) has become a well‐established technique to grow 2D transition metal dichalcogenide (TMDC) materials on large scale with high reproducibility.
Songyao Tang, Yibing Wang, Hleb Fiadziushkin, Yingfang Ding, Amir Ghiami, Michael Heuken, Andrei Vescan, Holger Kalisch   +7 more
doaj   +1 more source

MOCVD growth of cubic GaN: Materials and devices

, 2000
Many impressive progresses have been made recently on the growth of cubic-phase GaN by MBE and MOCVD. In this paper, some of our recent progress will be reviewed, including the growth of high quality cubic InGaN films, InGaN/GaN heterostructure blue and ...
Yang H, Yang H Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Natl Res Ctr Optoelect Beijing 100083 Peoples R China., Xu DP, Zheng LX, Zhao DG, Li SF, Fu Y, Zhang SM, Feng ZH, Sun YP   +9 more
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In-situ deposition of YBCO high-Tc superconducting thin films by MOCVD and PE-MOCVD [PDF]

, 1991
Metal-Organic Chemical Vapor Deposition (MOCVD) offers the advantages of a high degree of compositional control, adaptability for large scale production, and the potential for low temperature fabrication.
Li, Y. Q., Noh, D. W., Kear, B., Gallois, B., Chern, C., Zhao, J., Norris, P. E.   +6 more
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Characterization of GaSb substrate wafers for MOCVD III-V antimonides

, 1998
The qualities of GaSb substrates commonly used for the preparation of III-V antimonide epilayers were studied before and after growing GaInAsSb multi-layers by MOCVD using PL, FTIR and DCXD together with the electrical properties and EPD value.
Xu CM, Ding YQ, Peng RW,Acad Sinica,Shanghai Inst Met,Shanghai 200050,Peoples R China., Wang XG, Peng RW, Peng RW Acad Sinica Shanghai Inst Met Shanghai 200050 Peoples R China.   +5 more
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Growth of Au-seeded GaAs-GaSb nanowires explored in environmental TEM [PDF]

BIO Web of Conferences
Marnauza Mikelis, Sjökvist Robin, Kraina Azemina, Jacobsson Daniel, Dick-Thelander Kimberly   +4 more
doaj   +1 more source