Results 111 to 120 of about 15,720 (226)

MOCVD-Grown MoS₂ Wafers as a Transfer-Free Platform for Top-Gate Devices via Dry Interface Engineering. [PDF]

Adv Mater
Li S, Chang J, Atsumi K, Matsumoto K, Tanaka I, Nishimura T, Kanahashi K, Nagata T, Nara J, Sakuma Y, Kano E, Ikarashi N, Nagashio K.   +12 more
europepmc   +1 more source

Growth of Cubic GaN by MOCVD at High Temperature

, 2002
High quality cubic GaN (c-GaN) is grown by metalorganic vapor deposition (MOCVD) at an increased growth temperature of 900 ℃, with the growth rate of 1.6 μm/h.
Duan Lihong, Fu Yi, Wang Hai, Yang Hui, Li Shunfeng, Sun Yuanping, Shen Xiaoming, Feng Zhihong   +7 more
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Pulsed-Liquid-Injection MOCVD of Epitaxial β‑Ga₂O₃ Thin Films as a Promising Alternative Chemical Route. [PDF]

ACS Mater Au
Velasco Enriquez M, Jiménez C, Gélard I, Roussel H, Ortega-Murillo S, Broens MI, Rapenne L, Donatini F, Ferrandis P, Sarigiannidou E, Consonni V.   +10 more
europepmc   +1 more source

ECR plasma in growth of cubic GaN by low pressure MOCVD

, 2002
To heteroepitaxally grow the crystalline cubic-GaN (c-GaN) film on the substrates with large lattice mismatch is basically important for fabricating the blue or ultraviolet laser diodes based on cubic group III nitride materials.
Gu B, Sui Y, Qin FW, Wang ZG, Wang SS, Gu B,Dalian Univ Technol,State Key Lab Mat Modificat Laser Ion & Elect Bea,Dept Electromagnet Engn,Dalian 116024,Peoples R China., Xu Y   +6 more
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Single-Crystalline High-Quality β‑Ga₂O₃ Pseudosubstrate on Sapphire through Sputtering for Epitaxial Deposition. [PDF]

ACS Appl Eng Mater
Wang G, Xie S, Brand W, Khan SA, Ibreljic A, Shima D, Ma Y, Challa B, Sanyal S, Alema F, Osinsky A, Bhuiyan A, Balakrishnan G, Pasayat SS.   +13 more
europepmc   +1 more source

Oxygen-Assisted MOCVD Growth of Monolayer PtSe₂ Films With Bandgap Opening for Semiconducting FET Channels. [PDF]

Adv Sci (Weinh)
Kim Y, So HS, Yoo M, Oh S, Kim D, Gyeon M, Jo MK, Noh G, Kim TS, Kim MG, Park J, Chai HJ, Kang M, Kim S, Ham A, Lee J, Lim J, Song S, Kwak JY, Seo S, Lee CS, Kim CG, Kang K.   +22 more
europepmc   +1 more source

Recrystallization-Driven Formation of Single-Crystalline MoS₂ by Metal-Organic Chemical Vapor Epitaxy. [PDF]

Small Methods
Kandybka I, Kumar P, Silva HM, Groven B, Mehta AN, Shi Y, Smets Q, Schram T, Singh DP, Banerjee S, Lockhart de la Rosa CJ, Kar GS, Morin P, Delabie A.   +13 more
europepmc   +1 more source

Effect of beta-irradiation on photoluminescence of MOCVD grown GaN

, 2009
The effect of beta particles interaction on the optical properties of MOCVD grown GaN is reported. A significant change in luminescence properties of GaN is observed after exposing the material with 0.6 MeV beta particles with low dose of 10(12) cm(-2 ...
Ali A, Zhu JJ, Ali A Quaid I Azam Univ Dept Phys Adv Mat Phys Lab Islamabad Pakistan., Majid A, Israr M   +4 more
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Heteroepitaxial Growth of GaAs on Ge(111) and Ge(100) by MOCVD. [PDF]

Cryst Growth Des
Smith TR, Mafi A, Liao C, Bierer SE, McDermott SW, Lewis RB.   +5 more
europepmc   +1 more source

MOCVD growth of InN using a GaN buffer

, 2008
We have investigated MOCVD growth of InN oil sapphire with and without a GaN buffer between 490 and 520 degrees C. The buffer significantly improves the surface morphological uniformity and electrical properties of InN epilayers.
Yang H, Chen J, Zhu JJ, Wang H, Liang JW, Wang, LL, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: wangll@red.semi.ac.cn, Wang LL, Sun X, Jiang DS   +8 more
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