Wafer-Scale Self-Limiting Epitaxy of Bernal-Stacked Single-Crystal Boron Nitride. [PDF]
Wang J +22 more
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Challenges and prospects of 2D electronics for future monolithic complementary field-effect transistors. [PDF]
Islam MM +15 more
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Scalable quantum photonic platform based on site-controlled quantum dots coupled to circular Bragg grating resonators. [PDF]
Gaur K +14 more
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Oxygen-Regulated GaN-Based Sensors Fabricated by MOCVD for Switchable Gas Detection: Exhaled Gas Smart Platform for Non-Invasive Disease Detection. [PDF]
Wang Y +9 more
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One-Step Transfer of Symmetric and Asymmetric Contacts for Large-Scale 2D Electronics and Optoelectronics. [PDF]
Liu J +11 more
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Interfacial Polarization Switching in Al<sub>0.92</sub>Sc<sub>0.08</sub>N/GaN Heterostructures Grown by Sputter Epitaxy. [PDF]
Wolff N +6 more
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Heteroepitaxial Growth of α‑Ga<sub>2</sub>O<sub>3</sub> by MOCVD on <i>a</i>‑, <i>m</i>‑, <i>r</i>‑, and <i>c</i>‑Planes of Sapphire. [PDF]
Ngo KD, Sanyal I, Smith MD, Kuball M.
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High-performance p-type bilayer WSe<sub>2</sub> field effect transistors by nitric oxide doping. [PDF]
Ghosh S +9 more
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