Results 121 to 130 of about 40,351 (278)
Advanced Materials InterfacesThe electronic properties of 2D materials play a critical role in determining their potential for device applications. Despite rapid developments in 2D semiconductors, studies of fundamental electronic parameters, including the electronic gap and ...
Xu He +6 more
doaj +1 more source
Structural and optical characterisation of InN layers grown by MOCVD
, 2004 Preetam Singh +7 more
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Тонкие химические технологии, 2014 In this paper, we investigate the possibility of using gas mixer precursor for MOCVD to get sharper heterojunctions InxGa1-xAs, InxGa1-xAs и InxAl1-xAs.
A. A. Gorskiy
doaj
GROWTH AND PROPERTIES OF STACKED SELF-ASSEMBLED In0.5Ga0.5As QUANTUM DOTS
Jurnal Penelitian Fisika dan Aplikasinya, 2016 Self-assembled In0.5Ga0.5As quantum dots (QDs) were grown using metal-organic chemical vapor deposition (MOCVD) on GaAs (100) substrate with different number of stacking QDs layers.
Didik Aryanto +2 more
doaj
Preparation of dilute magnetic semiconductor films by metalorganic chemical vapor deposition [PDF]
A method for preparation of a dilute magnetic semiconductor (DMS) film is provided, in which a Group II metal source, a Group VI metal source and a transition metal magnetic ion source are pyrolyzed in the reactor of a metalorganic chemical vapor ...
Nouhi, Akbar, Stirn, Richard J.
core +1 more source
Production status of GaAs/Ge solar cells and panels [PDF]
GaAs/Ge solar cells with lot average efficiencies in excess of 18 percent were produced by MOCVD growth techniques. A description of the cell, its performance and the production facility are discussed.
Gillanders, M. +5 more
core +1 more source
Van der Waals epitaxial MOCVD-growth of (BixSb1−x)2Te3(0 <x< 1) films
, 2015 Georg Bendt +5 more
openalex +2 more sources