Results 51 to 60 of about 2,908 (186)

Engineered surface strategies to manage dental implant‐related infections

Periodontology 2000, EarlyView.
Abstract When exposed to the oral environment, dental implants, like natural surfaces, become substrates for microbial adhesion and accumulation, often leading to implant‐related infections—one of the main causes of implant failure. These failures impose significant costs on patients, clinicians, and healthcare systems.
João Gabriel S. Souza, Bruna E. Nagay, Rodrigo Martins, Martinna Bertolini, Jamil A. Shibli, Conrado Aparicio, Magda Feres, Valentim A. R. Barão   +7 more
wiley   +1 more source

Mass Spectrometric Investigation of the Influence of Water Vapour and Oxygen on Gas‐Phase Reactions of Aluminium Acetylacetonate

Advanced Materials Interfaces, Volume 13, Issue 12, 23 June 2026.
The gas‐phase decomposition of Al(acac)3 is investigated under inert, oxygen, and water‐containing conditions. Water is found to promote selective ligand removal and suppress hydrocarbon formation, while oxygen induces faster, less selective decomposition pathways.
Ilyas Adaköy, Sebastian Grimm, Patrick Hemberger, Nina Gaiser, Thomas Bierkandt, Charlotte Rudolph, Christoph Horn, Niklas Tomasik, Burak Atakan   +8 more
wiley   +1 more source

MOCVD Growth of Next-Generation III–V Semiconductor Devices: In Review

Photonics
Metal–organic chemical vapor deposition (MOCVD) is a crystal growth technique used to achieve high-purity thin films, especially III–V materials, for fabricating semiconductor devices.
Zoya Noor, Muhammad Usman, Shazma Ali, Anis Naveed, Amina Hafeez, Ahmed Ali   +5 more
doaj   +1 more source

Simple Synthesis of Entropy Stabilized Oxides Single Crystal Films

Advanced Materials Interfaces, Volume 13, Issue 12, 23 June 2026.
Diffusion‐controlled enables the creation of a single‐crystal thin film of Entropy‐stabilized oxides (ESO). ABSTRACT Entropy‐stabilized oxides (ESO) have emerged in the last decade as a new class of metastable materials with promising functional properties.
Antoine Raison, Nathalie Prud'homme, Christophe Racic, Wu Wang, Diana Dragoe, David Bérardan, Nita Dragoe   +6 more
wiley   +1 more source

Development and Research of the MOCVD Cleaning Robot

Machines
With the wide application of the gallium nitride (GaN) preparation method based on Metal–Organic Chemical Vapor Deposition (MOCVD), the automation of MOCVD equipment has become a research hotspot.
Yibo Ren, Zengwen Dong
doaj   +1 more source

Electrical properties of GaAs metal–oxide–semiconductor structure comprising Al2O3 gate oxide and AlN passivation layer fabricated in situ using a metal–organic vapor deposition/atomic layer deposition hybrid system

AIP Advances, 2015
This paper presents a compressive study on the fabrication and optimization of GaAs metal–oxide–semiconductor (MOS) structures comprising a Al2O3 gate oxide, deposited via atomic layer deposition (ALD), with an AlN interfacial passivation layer prepared ...
Takeshi Aoki, Noboru Fukuhara, Takenori Osada, Hiroyuki Sazawa, Masahiko Hata, Takayuki Inoue   +5 more
doaj   +1 more source

Multi‐Dielectric Metasurfaces for Ultrabright, Tunable Structural Color and Reconfigurable Optical Filtering with Extraordinarily Large Color Span

Advanced Optical Materials, Volume 14, Issue 23, 19 June 2026.
Structural color generation is an emerging field for digital display and printing applications. This report presents a novel truncated‐cone design and the first use of GaP sandwiched between two layers of TiO2, demonstrating ultra‐bright, tunable colors with a record color gamut.
Md Rumon Miah, Yavuz Selim Aydın, Hilmi Volkan Demir   +2 more
wiley   +1 more source

Ab initio study for molecular-scale adsorption, decomposition and desorption on AlN surfaces during MOCVD growth

Scientific Reports, 2020
Since AlGaN offers new opportunities for the development of the solid state ultraviolet (UV) luminescence, detectors and high-power electronic devices, the growth of AlN buffer substrate is concerned.
Jiadai An, Xianying Dai, Runqiu Guo, Lansheng Feng, Tianlong Zhao   +4 more
doaj   +1 more source

GaInAs camel transistors grown by MOCVD

Electronics Letters, 1989
Hot electron camel transistors have been fabricated for the first time in GaInAs. The camel structures were grown by MOCVD. The thickness of the base layer is 40 nm, the emitter barrier height is 0·55 eV, the collector barrier height is 0·25 eV, and the base transport factor is 0·6 at room temperature.
MARSO, Michel, Zwinge, G., Beneking, H.
openaire   +2 more sources

Single-step Au-catalysed synthesis and microstructural characterization of core–shell Ge/In–Te nanowires by MOCVD

Materials Research Letters, 2018
We report on the self-assembly of core–shell Ge/In–Te nanowires (NWs) on single crystal Si substrates by Metalorganic Chemical Vapour Deposition (MOCVD), coupled to the Vapour–Liquid–Solid (VLS) mechanism, catalysed by Au nanoparticles (NPs). The NWs are
Raimondo Cecchini, Simone Selmo, Claudia Wiemer, Enzo Rotunno, Laura Lazzarini, Marta De Luca, Ilaria Zardo, Massimo Longo   +7 more
doaj   +1 more source