Results 51 to 60 of about 40,351 (278)

Si-doped AlN using pulsed metalorganic chemical vapor deposition and doping

Applied Physics Express
In this paper we describe a pulsed metalorganic chemical vapor deposition (MOCVD) Si-doping approach for AlN epilayers over bulk AlN. The Al-rich growth/doping conditions in the pulsed MOCVD process resulted in n-AlN layers with transmission line model ...
Tariq Jamil, Abdullah Al Mamun Mazumder, Mafruda Rahman, Muhammad Ali, Jingyu Lin, Hongxing Jiang, Grigory Simin, Asif Khan   +7 more
doaj   +1 more source

MOCVD ZnO/Screen Printed Ag Back Reflector for Flexible Thin Film Silicon Solar Cell Application

International Journal of Photoenergy, 2014
We have prepared Ag back electrode by screen printing technique and developed MOCVD ZnO/screen printed Ag back reflector for flexible thin film silicon solar cell application.
Amornrat Limmanee, Patipan Krudtad, Sasiwimon Songtrai, Suttinan Jaroensathainchok, Taweewat Krajangsang, Jaran Sritharathikhun, Kobsak Sriprapha   +6 more
doaj   +1 more source

Electron diffusion length and lifetime in p-type GaN [PDF]

, 1998
We report on electron beam induced current and current–voltage (I–V) measurements on Schottky diodes on p-type doped GaN layers grown by metal organic chemical vapor deposition.
Bandić, Z. Z., Bridger, P. M., McGill, T. C., Piquette, E. C.   +3 more
core   +1 more source

Simple Synthesis of Entropy Stabilized Oxides Single Crystal Films

Advanced Materials Interfaces, EarlyView.
Diffusion‐controlled enables the creation of a single‐crystal thin film of Entropy‐stabilized oxides (ESO). ABSTRACT Entropy‐stabilized oxides (ESO) have emerged in the last decade as a new class of metastable materials with promising functional properties.
Antoine Raison, Nathalie Prud'homme, Christophe Racic, Wu Wang, Diana Dragoe, David Bérardan, Nita Dragoe   +6 more
wiley   +1 more source

Achieving low sheet resistance in Si-doped AlN via low-temperature MOCVD

Applied Physics Express
A low-temperature (LT) metal-organic chemical vapor deposition (MOCVD) technique was developed for obtaining conductive Si-doped AlN thin films. An optimization of the deposition parameters, such as V/III ratio and trimethylaluminum flow rate, enabled ...
Swarnav Mukhopadhyay, Khush Gohel, Surjava Sanyal, Guangying Wang, Shubhra S. Pasayat   +4 more
doaj   +1 more source

Multi‐Dielectric Metasurfaces for Ultrabright, Tunable Structural Color and Reconfigurable Optical Filtering with Extraordinarily Large Color Span

Advanced Optical Materials, EarlyView.
Structural color generation is an emerging field for digital display and printing applications. This report presents a novel truncated‐cone design and the first use of GaP sandwiched between two layers of TiO2, demonstrating ultra‐bright, tunable colors with a record color gamut.
Md Rumon Miah, Yavuz Selim Aydın, Hilmi Volkan Demir   +2 more
wiley   +1 more source

Controlling graphene work function by doping in a MOCVD reactor

Heliyon, 2018
Here we demonstrate a new method for doping graphene using Metal Organic Chemical Vapor Deposition (MOCVD) reactor. The original undoped graphene was of a very high quality mounted on Si/SiO2 substrates, they were then doped in the MOCVD's reactor using ...
Chen Klein, Doron Cohen-Elias, Gabby Sarusi   +2 more
doaj   +1 more source

Full bandgap defect state characterization of β-Ga2O3 grown by metal organic chemical vapor deposition

APL Materials, 2020
The results of a detailed investigation of electrically active defects in metal-organic chemical vapor deposition (MOCVD)-grown β-Ga2O3 (010) epitaxial layers are described.
Hemant Ghadi, Joe F. McGlone, Christine M. Jackson, Esmat Farzana, Zixuan Feng, A. F. M. Anhar Uddin Bhuiyan, Hongping Zhao, Aaron R. Arehart, Steven A. Ringel   +8 more
doaj   +1 more source

TiOxNy coatings grown by atmospheric pressure metal organic chemical vapor deposition [PDF]

, 2010
Titanium oxynitride coatings were deposited on various substrates by an original atmospheric pressure metal organic chemical vapor deposition (MOCVD) process using titanium tetra-iso-propoxide as titanium and oxygen precursors and hydrazine as a nitrogen
Duminica, Florin-Daniel, Maury, Francis
core   +4 more sources

Topological Materials and Related Applications

Advanced Electronic Materials, EarlyView.
This review covers topological materials—including topological insulators, quantum valley Hall and quantum spin Hall insulators, and topological Weyl and Dirac semimetals—as well as their most recent advancements in fields such as spintronics, electronics, photonics, thermoelectrics, and catalysis.
Carlo Grazianetti, Roberto Mantovan, Emanuele Longo, Harold J. W. Zandvliet, Pantelis Bampoulis, Yu Pan, Fan Li, Xia Wang, Payton Downey, Alessandro Molle   +9 more
wiley   +1 more source