Results 51 to 60 of about 15,720 (226)

Photovoltaic Effect in a III‐IV‐V Compound Semiconductor

Progress in Photovoltaics: Research and Applications, EarlyView.
A large reduction of the GaAs band gap is obtained with incorporation of 6.5% Ge during epitaxy without introducing extended defects or composition inhomogeneity. Heterojunction solar cell devices were fabricated with 0.76‐V open circuit voltage and an internal quantum efficiency above 40% at energies below the bandgap of the GaAs emitter.
José M. Ripalda, Pablo Caño, Micaela Rodriguez‐Peña, Miguel Angel Sevillano‐Bendezú, Aurelia Trevisan, Raghavendra Juluri, Aitana Cano, Iván García, Alicia Gonzalo, Enrique Navarro, Jeronimo Buencuerpo, Paul Koenraad, Ana María Sanchez, Yolanda Gonzalez   +13 more
wiley   +1 more source

Wet‐Transferred MoS2 on Passivated InP: A Van der Waals Heterostructure for Advanced Optoelectronic Applications

physica status solidi (RRL) – Rapid Research Letters, Volume 19, Issue 5, May 2025.
This study presents a photodetector based on atomically thin MoS2 on an InP substrate, forming an n‐MoS2/p‐InP type‐II staggered heterojunction. The device exhibits excellent rectifying properties with an ideality factor of 1.57 and achieves a peak photoresponsivity of 960 mA W−1, while MoS2 provides stable passivation for InP. III–V semiconductors are
Dong Hwi Choi, Jae Hyeop Lee, Min Su Kim, Jaeseo Park, Jun Oh Kim, Teli Aviraj Mahadev, Beknalkar Sonali Ajay, Hong Hyuk Kim, Jae Cheol Shin   +8 more
wiley   +1 more source

Engineered surface strategies to manage dental implant‐related infections

Periodontology 2000, EarlyView.
Abstract When exposed to the oral environment, dental implants, like natural surfaces, become substrates for microbial adhesion and accumulation, often leading to implant‐related infections—one of the main causes of implant failure. These failures impose significant costs on patients, clinicians, and healthcare systems.
João Gabriel S. Souza, Bruna E. Nagay, Rodrigo Martins, Martinna Bertolini, Jamil A. Shibli, Conrado Aparicio, Magda Feres, Valentim A. R. Barão   +7 more
wiley   +1 more source

MOCVD-Grown In_0.22Ga_0.78As Metamorphic Buffer Layer with Ultralow Threading Dislocation Density

Compositional step-graded In0.22Ga0.78As metamorphic buffer layers (MBLs) with a series of thick individual step buffer layers on GaAs substrates are demonstrated by metal organic chemical vapor deposition (MOCVD).
Kaddour Lekhal (18346086), Shining Xu (14043366), Cheng Liu (83733), Thomas Kuech (3707866), Honghyuk Kim (18346083), Luke Mawst (17557269)   +5 more
core   +1 more source

MOCVD and ferromagnetic resonance of epitaxial Lu3Fe5O12 films for high-frequency applications

Конденсированные среды и межфазные границы
Objectives: The production of thin films of rare earth iron garnets with a narrower ferrimagnetic resonance (FMR) linewidth is extremely important in the development of spintronic materials.
Abduvosit A. Hafizov, Maria N. Markelova, Ruoxuan Gu, Igor E. Graboy, Vadim A. Amelichev, Dmitry A. Volkov, David A. Gabrielyan, Ansar R. Safin, Sergey A. Nikitov, Andrey R. Kaul   +9 more
doaj   +1 more source

Sub-nanometer ultrathin epitaxy of AlGaN and its application in efficient doping

Light: Science & Applications, 2022
A desorption-tailoring strategy is demonstrated to steadily prepare self-assembled p-AlGaN superlattices with sub-nanometer ultrathin barriers by MOCVD, which juggle the hole concentration and transport.
Jiaming Wang, Mingxing Wang, Fujun Xu, Baiyin Liu, Jing Lang, Na Zhang, Xiangning Kang, Zhixin Qin, Xuelin Yang, Xinqiang Wang, Weikun Ge, Bo Shen   +11 more
doaj   +1 more source

Monolithically Integrated III–V Heterostructure Photonic Crystal Lasers on Silicon‐on‐Insulator

Nanophotonics, Volume 15, Issue 19, 13 October 2026.
Our work demonstrates slow‐light‐enabled photonic crystal lasers monolithically integrated on SOI using selective lateral heteroepitaxy. The slow‐light photonic crystal waveguides provide enhanced light–matter interaction to enable the lasing operation with an estimated group index of 31.8. The results provide a pathway toward compact, energy‐efficient
Zhaojie Ren, Zili Lei, Cong Zeng, Donghui Fu, Ying Yu, Yu Han, Siyuan Yu   +6 more
wiley   +1 more source

Role of hydrogen carrier gas on the growth of few layer hexagonal boron nitrides by metal-organic chemical vapor deposition

AIP Advances, 2017
Few layer hexagonal boron nitride (h-BN) films were grown on 2-inch sapphire substrates by using metal-organic chemical vapor deposition (MOCVD) with two different carrier gases, hydrogen (H2) and nitrogen (N2 ...
Dong Yeong Kim, Nam Han, Hokyeong Jeong, Jaewon Kim, Sunyong Hwang, Jong Kyu Kim   +5 more
doaj   +1 more source

A Universal van der Waals Tunneling Injector for Monolayer CMOS

Advanced Materials, Volume 38, Issue 57, 13 October 2026.
A universal van der Waals injector unlocks polarity‐flexible tunneling contacts for monolayer CMOS. SnSe2, an intrinsically degenerate 2D semiconductor, establishes polarity‐specific band alignments with both WSe2 and MoS2 channels, enabling steep switching, high on/off ratios, and a unified route to low‐power 2D logic.
Hanbin Cho, Jing Huang, Seonguk Yang, Subin Im, Sangwoo Park, Jeongin Yeo, Sungyeon Kim, Gilhwan Do, Wenxuan Zhu, Soobeom Shin, Jongwon Lee, Yongjoon Shin, Do‐Sun Lee, Hu Young Jeong, Tae‐Eon Park, Jun Kang, Kyungmin Ko, Joonki Suh   +17 more
wiley   +1 more source

Volatile surfactant assisted MOCVD of oxide materials

, 1999
a new approach to improve the crystalline quality of MOCVD derived oxide films is proposed. The approach is to deposit the films in the presence of volatile surfactants, thus it is named Volatile Surfactant Assisted MOCVD (VSA MOCVD). The surfactants are
A.A. Molodyk, G. Wahl, M.A. Novojilov, O.Yu. Gorbenko, I.E. Korsakov, A.R. Kaul   +5 more
core   +1 more source