Results 31 to 40 of about 2,908 (186)

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

Direct hard X-ray photodetector with superior sensitivity based on ZnGa2O4 epilayer grown by metalorganic chemical vapor deposition

Materials Today Advances, 2023
In this work, we have fabricated a highly sensitive direct irradiating X-ray photodetector (DXPD) based on Zinc Gallium Oxide (ZnGa2O4) epilayers with a metal-semiconductor-metal structure. The ZnGa2O4 epilayers were grown on a c-plane sapphire substrate
Siddharth Rana, Shang-Jui Chiu, Chih-Yang Huang, Fu-Gow Tairtan, Yan-Gu Lin, Dong-Sing Wuu, Jitendra Pratap Singh, Guang-Cheng Su, Po-Liang Liu, Ray-Hua Horng   +9 more
doaj   +1 more source

MOCVD Growth and Characterization of Be-Doped GaN

ACS Applied Electronic Materials, 2022
Beryllium has been considered a potential alternative to magnesium as a p-type dopant in GaN, but attempts to produce conductive p-GaN:Be have not been successful. Photoluminescence studies have repeatedly shown Be to have an acceptor level shallower than that of Mg, but deep Be defects and other compensating defects render most GaN:Be materials n-type
Benjamin McEwen, Michael A. Reshchikov, Emma Rocco, Vincent Meyers, Kasey Hogan, Oleksandr Andrieiev, Mykhailo Vorobiov, Denis O. Demchenko, Fatemeh Shahedipour-Sandvik   +8 more
openaire   +2 more sources

Bandgap‐Engineered AlGaAs/GaAs Heterostructures for Wavelength‐Selective Dual‐Polarity Photoelectrochemistry

Advanced Functional Materials, EarlyView.
Bandgap‐engineered AlGaAs/GaAs heterostructures exhibit wavelength‐selective dual‐polarity photoelectrochemistry, switching from photocathodic to photoanodic response depending on excitation wavelength. The polarity transition is governed by band‐selective absorption, built‐in electric‐field‐driven carrier transport, and interfacial charge‐transfer ...
Yukai Mao, Lipin Chen, Jules Courtin, Siyu Lin, Gangri Cai, Yan Zhu, Yoan Léger, Nicolas Bertru, Jinshi Zhao, Charles Cornet   +9 more
wiley   +1 more source

Microscopic Origin of Temperature‐Dependent Anisotropic Heat Transport in Ultrawide‐Bandgap Rutile GeO2

Advanced Functional Materials, EarlyView.
Rutile GeO2${\rm GeO}_{2}$ exhibits orientation‐dependent heat transport with temperature‐dependent anisotropy, showing higher cross‐plane thermal conductivity along [001] than along the equivalent in‐plane [100] and [010] directions. Temperature‐dependent TDTR measurements and first‐principles phonon calculations identify the microscopic phonon ...
Pouria Emtenani, Marta Loletti, Felix Nippert, Eduardo Bedê Barros, Zbigniew Galazka, Hans Tornatzky, Christian Thomsen, Juan Sebastián Reparaz, Riccardo Rurali, Markus R. Wagner   +9 more
wiley   +1 more source

Chemical vapor deposition of Tm3Fe5O12 epitaxial films, investigation of their structure and properties in the terahertz range

Конденсированные среды и межфазные границы
In this study, for the search and development of new spintronic materials, thin films of Tm3Fe5O12 iron garnet were obtained by the metalorganic chemical vapor deposition (MOCVD) on single-crystal Gd3Ga5O12(111) – GGG and Y3Al5O12(111) – YAG substrates.
Maria N. Markelova, Abduvosit A. Hafizov, Xiaoyu Shi, Igor E. Graboy, Maxim S. Shanin, Maria R. Konnikova, Alexander P. Shkurinov, Andrey R. Kaul   +7 more
doaj   +1 more source

Opportunities of Semiconducting Oxide Nanostructures as Advanced Luminescent Materials in Photonics

Advanced Materials, EarlyView.
The review discusses the challenges of wide and ultrawide bandgap semiconducting oxides as a suitable material platform for photonics. They offer great versatility in terms of tuning microstructure, native defects, doping, anisotropy, and micro‐ and nano‐structuring. The review focuses on their light emission, light‐confinement in optical cavities, and
Ana Cremades, Pedro Hidalgo, David Maestre, Ruth Martínez‐Casado, Emilio Nogales, Beatriz Rodríguez, G. Cristian Vásquez, Bianchi Méndez   +7 more
wiley   +1 more source

Energy Band Alignment and Electro‐Optical Behavior of Nearly Unstrained Monolayer MoS2 Heterostructures With GaN

Advanced Materials Interfaces, EarlyView.
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci, Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte, Fiorenza Esposito, Igor Píš, Federica Bondino, Antonino Madonia, Marco Cannas, Simonpietro Agnello, Luca Seravalli, Filippo Giannazzo   +12 more
wiley   +1 more source

The algorithmic programs for optimal growth conditions selection in growing of GaAs-based epitaxial layers by MOCVD.

Тонкие химические технологии, 2009
The algorithm was worked out, witch allows to define obtained GaAs-based layers characteristics and the most significant epitaxy process technological parameters on the base of half-empiric dependences, if MOCVD process carriage conditions are known.
A. A. Marmalyuk, D. E. Arbenin, E. V. Burlyaeva   +2 more
doaj  

Si-doped AlN using pulsed metalorganic chemical vapor deposition and doping

Applied Physics Express
In this paper we describe a pulsed metalorganic chemical vapor deposition (MOCVD) Si-doping approach for AlN epilayers over bulk AlN. The Al-rich growth/doping conditions in the pulsed MOCVD process resulted in n-AlN layers with transmission line model ...
Tariq Jamil, Abdullah Al Mamun Mazumder, Mafruda Rahman, Muhammad Ali, Jingyu Lin, Hongxing Jiang, Grigory Simin, Asif Khan   +7 more
doaj   +1 more source