Phase Transformations of Metallorganic Chemical Vapor Deposition Processed Alumina Coatings Investigated by In Situ Deflection [PDF]
, 2007 Phase transformations of Al2O3 films, deposited by metallorganic chemical vapor deposition from aluminium tri-isopropoxide on AISI 301 stainless steel, were investigated using an original technique of deflection associated with X-ray diffraction and ...
Andrieux, Michel +5 more
core +5 more sources
Strain-Compensated InGaAsP Superlattices for Defect Reduction of InP Grown on Exact-Oriented (001) Patterned Si Substrates by Metal Organic Chemical Vapor Deposition. [PDF]
, 2018 We report on the use of InGaAsP strain-compensated superlattices (SC-SLs) as a technique to reduce the defect density of Indium Phosphide (InP) grown on silicon (InP-on-Si) by Metal Organic Chemical Vapor Deposition (MOCVD).
Bowers, John E +6 more
core +2 more sources
Thermal behaviour of CpCuPEt3 in gas phase and Cu thin films processing [PDF]
, 2007 Decomposition of CpCuPEt3 (Cp=NNN(η5-C5H5)) and MOCVD of Cu films from CpCuPEt3 have been investigated in the frame of an ongoing project on the processing of Cu-containing coatings.
Gleizes, Alain +7 more
core +4 more sources
FTIR and XPS studies on corrosion resistant SiO2 coatings as a function of the humidity during deposition [PDF]
, 1996 The degradation of SiO2 coatings deposited on alloys by metal organic chemical vapour deposition (MOCVD) in sulphidizing high-temperature environments is determined by delamination and crack formation.
Fransen, T. +4 more
core +2 more sources
Shape optimization of a showerhead system for the control of growth uniformity in a MOCVD reactor using CFD-based evolutionary algorithms [PDF]
, 2009 A steady state, laminar flow coupled with heat transfer, gas-phase and surface chemistry, is numerically solved for the optimal design of a showerhead gas delivery system in an axis-symmetrical MOCVD reactor.
Aloui, Lyacine +5 more
core +2 more sources
MOCVD Growth and Characterization of Be-Doped GaN
ACS Applied Electronic Materials, 2022 Beryllium has been considered a potential alternative to magnesium as a p-type dopant in GaN, but attempts to produce conductive p-GaN:Be have not been successful. Photoluminescence studies have repeatedly shown Be to have an acceptor level shallower than that of Mg, but deep Be defects and other compensating defects render most GaN:Be materials n-type
Benjamin McEwen +8 more
openaire +2 more sources
Materials Research Express, 2021 An inductively coupled plasma metal organic chemical vapor deposition (ICP-MOCVD) based on showerhead structure is proposed for the low temperature growth of thin solid films including GaN.
Zixuan Zhang +11 more
doaj +1 more source
Epitaxial growth of β-Ga2O3 by hot-wall MOCVD
AIP Advances, 2022 The hot-wall metalorganic chemical vapor deposition (MOCVD) concept, previously shown to enable superior material quality and high performance devices based on wide bandgap semiconductors, such as Ga(Al)N and SiC, has been applied to the epitaxial growth
Daniela Gogova +13 more
doaj +1 more source
Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips
Advanced Functional Materials, EarlyView.This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee +16 more
wiley +1 more source
Materials Today Advances, 2023 In this work, we have fabricated a highly sensitive direct irradiating X-ray photodetector (DXPD) based on Zinc Gallium Oxide (ZnGa2O4) epilayers with a metal-semiconductor-metal structure. The ZnGa2O4 epilayers were grown on a c-plane sapphire substrate
Siddharth Rana +9 more
doaj +1 more source