Results 31 to 40 of about 15,720 (226)

1T‐to‐2H Phase Evolution During Epitaxial Growth of Transition Metal Dichalcogenides

Advanced Materials, EarlyView.
During MOCVD growth of MoS2 and WSe2, a transient metallic 1T phase emerges in early, edge‐rich, chalcogen‐deficient domains and declines as the films ultimately coalesce as 2H material. Together, experiments and ReaxFF simulations link domain size, edge stoichiometry, and vacancies to this evolution.
Andrew R. Graves, Yiru Zhu, Matin Salimi Irdmusa, Nadire Nayir, Thomas V. Mc Knight, Chen Chen, Ke Wang, Adri C. T. van Duin, Joan M. Redwing   +8 more
wiley   +1 more source

Nanoscale Optical Inhomogeneities From Compositional Segregation Within Individual GaN‐on‐Si Quantum Wells

Advanced Science, EarlyView.
This work visualizes local variations in luminescence and relates them to nanoscale chemical inhomogeneities in single InxGa1−xN quantum wells. We demonstrate that the elemental segregation is only inherent to quantum wells with high indium content. Density functional theory shows this to be the result of strain‐induced phase stabilization, explaining ...
Jing‐Yang Chung, Tara P. Mishra, Zackaria Mahfoud, Thomas E. Gage, Jianguo Wen, Katherine P. Rice, Isabelle Martin, Li Zhang, Govindo J. Syaranamual, Stephen J. Pennycook, Silvija Gradečak, Pieremanuele Canepa, Michel Bosman   +12 more
wiley   +1 more source

The algorithmic programs for optimal growth conditions selection in growing of GaAs-based epitaxial layers by MOCVD.

Тонкие химические технологии, 2009
The algorithm was worked out, witch allows to define obtained GaAs-based layers characteristics and the most significant epitaxy process technological parameters on the base of half-empiric dependences, if MOCVD process carriage conditions are known.
A. A. Marmalyuk, D. E. Arbenin, E. V. Burlyaeva   +2 more
doaj  

Si-doped AlN using pulsed metalorganic chemical vapor deposition and doping

Applied Physics Express
In this paper we describe a pulsed metalorganic chemical vapor deposition (MOCVD) Si-doping approach for AlN epilayers over bulk AlN. The Al-rich growth/doping conditions in the pulsed MOCVD process resulted in n-AlN layers with transmission line model ...
Tariq Jamil, Abdullah Al Mamun Mazumder, Mafruda Rahman, Muhammad Ali, Jingyu Lin, Hongxing Jiang, Grigory Simin, Asif Khan   +7 more
doaj   +1 more source

MOCVD ZnO/Screen Printed Ag Back Reflector for Flexible Thin Film Silicon Solar Cell Application

International Journal of Photoenergy, 2014
We have prepared Ag back electrode by screen printing technique and developed MOCVD ZnO/screen printed Ag back reflector for flexible thin film silicon solar cell application.
Amornrat Limmanee, Patipan Krudtad, Sasiwimon Songtrai, Suttinan Jaroensathainchok, Taweewat Krajangsang, Jaran Sritharathikhun, Kobsak Sriprapha   +6 more
doaj   +1 more source

Van der Waals Heterostructures for Next‐Generation Spintronics: Multiferroic‐Mediated Magnetoelectric Properties

Advanced Science, EarlyView.
As CMOS technology approaches fundamental energy limits, new paradigms for low‐power information processing are required. Magnetic systems are attractive for their spin transport, yet current‐induced magnetization control is energy inefficient. Multiferroic heterostructures enable energy‐efficient electric field manipulation of magnetism.
Donghyeon Lee, Jiwoong Yang, Inhyeok Oh, Sanghan Lee   +3 more
wiley   +1 more source

Achieving low sheet resistance in Si-doped AlN via low-temperature MOCVD

Applied Physics Express
A low-temperature (LT) metal-organic chemical vapor deposition (MOCVD) technique was developed for obtaining conductive Si-doped AlN thin films. An optimization of the deposition parameters, such as V/III ratio and trimethylaluminum flow rate, enabled ...
Swarnav Mukhopadhyay, Khush Gohel, Surjava Sanyal, Guangying Wang, Shubhra S. Pasayat   +4 more
doaj   +1 more source

Metal–organic chemical vapor deposition of 2D van der Waals materials—The challenges and the extensive future opportunities

APL Materials, 2020
The last decade has witnessed significant progress in two-dimensional van der Waals (2D vdW) materials research; however, a number of challenges remain for their practical applications.
Do Hee Lee, Yeoseon Sim, Jaewon Wang, Soon-Yong Kwon   +3 more
doaj   +1 more source

Atomistic Kinetics of Dislocation‐Mediated Grain Growth in Monolayer MoS2

Advanced Science, EarlyView.
Atomic‐resolution in‐situ heating microscopy directly visualizes dislocation‐mediated grain boundary migration and grain growth in monolayer MoS2. Mobile grain boundaries migrate through collective motion of Mo 5|7 dislocations, whereas S 5|7 defects remain largely immobile.
Chang‐Won Choi, Min‐Yeong Choi, Tao Du, Jinho Rhee, Seokho Moon, Yeon‐Seo Nam, Xiaoyan Lu, Jong Kyu Kim, Jungwon Park, Moon‐Ho Jo, Cheol‐Joo Kim, Si‐Young Choi   +11 more
wiley   +1 more source

Controlling graphene work function by doping in a MOCVD reactor

Heliyon, 2018
Here we demonstrate a new method for doping graphene using Metal Organic Chemical Vapor Deposition (MOCVD) reactor. The original undoped graphene was of a very high quality mounted on Si/SiO2 substrates, they were then doped in the MOCVD's reactor using ...
Chen Klein, Doron Cohen-Elias, Gabby Sarusi   +2 more
doaj   +1 more source