Results 81 to 90 of about 62,943 (302)
Investigation of Defect Propagation in 4H-SiC: From Substrate to Epitaxial Layers
Applied SciencesSilicon carbide (SiC) is the leading wide bandgap semiconductor for high-power and high-temperature electronics, but the high defect density still limits device performance.
Francesco Maria Fiorino +2 more
doaj +1 more source
Growth and applications of GeSn-related group-IV semiconductor materials
Science and Technology of Advanced Materials, 2015 We review the technology of Ge1−xSnx-related group-IV semiconductor materials for developing Si-based nanoelectronics. Ge1−xSnx-related materials provide novel engineering of the crystal growth, strain structure, and energy band alignment for realising ...
Shigeaki Zaima +5 more
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THE INFLUENCE OF STRUCTURAL DEFECTS ON THE KINETICS OF DIFFUSION PROCESSES
Вестник Дагестанского государственного технического университета: Технические науки, 2016 At present there are various methods of control, based on various physical principles and possessing a wide variety of different sensitivity, diversity of applications.
Т. E. Sarkarov
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Advanced Science, EarlyView.The symmetry‐driven coexistence of altermagnetism and (anti)ferroelectricity in perovskites shows a strong dimensional dependence. Upon reducing the system from bulk to the two‐dimensional limit, only C‐type antiferromagnetic order retains ferroelectrically switchable altermagnetism, whereas A‐ and G‐type orders become conventional antiferromagnets ...
Zhou Cui +6 more
wiley +1 more source
Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy
Beilstein Journal of Nanotechnology, 2018 In this paper we study growth of quasi-one-dimensional GaN nanowires (NWs) and nanotube (NT)-like nanostructures on Si(111) substrates covered with a thin AlN layer grown by means of plasma-assisted molecular beam epitaxy.
Alexey D. Bolshakov +9 more
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Ni-induced selective nucleation and solid phase epitaxy of large-grained poly-Si on glass
, 2000 We investigated the formation of large-grain polycrystalline silicon films on glass substrates for application in low-cost thin film crystalline silicon solar cells.
Puglisi Rosaria A +4 more
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A Generalized Epitaxy Recipe for Ternary van der Waals AB2X4 Single Crystalline Thin Films
Two-dimensional van der Waals (vdW) ternary AB2X4 thin films have shown great potential in fields such as quantum transport, thermoelectrics, phase-change memory and spintronics.
Su, Tingting +17 more
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ZnO and ZnCdO metal organic vapor phase epitaxy: epitaxy, defects and band gap engineering [PDF]
, 2011 Zinc oxide (ZnO) and its ternary alloys have high potential to compete with III-V nitrides for optoelectronic applications. Furthermore, oxide semiconductors receive considerable attention due to their low cost of fabrication, chemical robustness and ...
Venkatachalapathy, Vishnukanthan
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Advanced Science, EarlyView.This work reports on epitaxially grown Hf0.52Zr0.48O2 ferroelectric memristors with high stability (high durability exceeding 108 cycles and a retention time exceeding 104 s for 16 states) and ultra‐low operating energy consumption (∼121 fJ). A memristor array‐based reservoir computing system is constructed and applied for the first time in the field ...
Ying Liu +6 more
wiley +1 more source
Science and Technology of Advanced Materials, 2016 Epitaxial (PbMg1/3Nb2/3O3)2/3-(PbTiO3)1/3 (PMN-PT) films with different out-of-plane orientations were prepared using a CeO2/yttria stabilized ZrO2 bilayer buffer and symmetric SrRuO3 electrodes on silicon substrates by pulsed laser deposition.
Muhammad Boota +7 more
doaj +1 more source