Results 81 to 90 of about 142,351 (345)

Multi‐Dielectric Metasurfaces for Ultrabright, Tunable Structural Color and Reconfigurable Optical Filtering with Extraordinarily Large Color Span

Advanced Optical Materials, EarlyView.
Structural color generation is an emerging field for digital display and printing applications. This report presents a novel truncated‐cone design and the first use of GaP sandwiched between two layers of TiO2, demonstrating ultra‐bright, tunable colors with a record color gamut.
Md Rumon Miah, Yavuz Selim Aydın, Hilmi Volkan Demir   +2 more
wiley   +1 more source

A Study on the Growth Conditions Role in Defining InGaAs Epitaxial Layer Quality

Cumhuriyet Science Journal
This study delves into the epitaxial growth and characterization of InxGa1-xAs layers on InP substrate, a critical area in the development of high-performance III-V semiconductor devices.
Sezai Elagöz, Meryem Demir
doaj   +1 more source

Lattice fringe signatures of epitaxy on nanotubes

, 2006
Carbon nanotubes are of potential interest as heterogeneous catalysis supports, in part because they offer a high surface area hexagonal array of carbon atoms for columnar or epitaxial attachment. Fringe visibility modeling of electron microscope lattice
Fraundorf, P., Wang, Jinfeng, Xing, Yangchuan   +2 more
core   +1 more source

Harnessing Ultrafast Optical Pulses for 3D Microfabrication by Selective Tweezing and Immobilization of Colloidal Particles in an Integrated System

Advanced Photonics Research, Volume 6, Issue 5, May 2025.
Microfabrication using nano‐ to micron‐sized blocks has transformative potential for next‐gen electronics, optoelectronics, and materials. Traditional methods are limited by scalability and precision. STIC, a single‐laser system for precise colloid manipulation and immobilization using femtosecond lasers, is introduced that enables efficient 3D ...
Krishangi Krishna, Jieliyue Sun, Wenyu Liu, Robert H. Hurt, Kimani C. Toussaint Jr.   +4 more
wiley   +1 more source

Step‐Directed Epitaxy of Unidirectional Hexagonal Boron Nitride on Vicinal Ge(110)

Small Structures
Insulating hexagonal boron nitride (hBN) films with precisely controlled thickness are ideal dielectric components to modulate various interfaces in electronic devices.
Ju‐Hyun Jung, Chao Zhao, Seong‐Jun Yang, Jun‐Ho Park, Woo‐Ju Lee, Su‐Beom Song, Jonghwan Kim, Chan‐Cuk Hwang, Seung‐Hwa Baek, Feng Ding, Cheol‐Joo Kim   +10 more
doaj   +1 more source

Growth of High-Mobility Bi2Te2Se Nanoplatelets on hBN Sheets by van der Waals Epitaxy

, 2012
The electrical detection of the surface states of topological insulators is strongly impeded by the interference of bulk conduction, which commonly arises due to pronounced doping associated with the formation of lattice defects.
Arakane T., Benia H. M., Bo F. Gao, Cha J. J., Dang W., Gehring P., Gorbachev R. V., Hong S. S., Hsieh D., Hyde G., Jiang Y., Kane C. L., Kim S., Klaus Kern, Kong D., Kong D., Kong D., Kong D., Kou X. F., Linder J., Marko Burghard, Pascal Gehring, Qi X.-L., Qu D.-X., Ren Z., Richter W., Shoenberg D., Sokolov O., Wang G., Wang Y., Wang Z., Watanabe K., Xia Y., Xiong J., Yazyev O. V.   +34 more
core   +1 more source

Molecular beam epitaxy growth of the highly conductive oxide SrMoO3 [PDF]

, 2020
Hiroshi Takatsu, Naoya Yamashina, Daisuke Shiga, Ryu Yukawa, Koji Horiba, Hiroshi Kumigashira, Takahito Terashima, Hiroshi Kageyama   +7 more
openalex   +1 more source

Orbital Magnetic Moment Controlled Converse Magnetoelectric Effect in bcc‐Co3Mn/Fe/V/PMN‐PT Multiferroic Heterostructures

Advanced Science, EarlyView.
Based on orbital magnetic moment control, a material design strategy is proposed for a giant converse magnetoelectric effect in multiferroic heterostructures. This study will pioneer a promising route toward low‐power spintronic devices with an electric field.
Takamasa Usami, Yuichi Murakami, Ryota Watarai, Yu Shiratsuchi, Yoshihiro Gohda, Kohei Hamaya   +5 more
wiley   +1 more source

Growth and applications of GeSn-related group-IV semiconductor materials

Science and Technology of Advanced Materials, 2015
We review the technology of Ge1−xSnx-related group-IV semiconductor materials for developing Si-based nanoelectronics. Ge1−xSnx-related materials provide novel engineering of the crystal growth, strain structure, and energy band alignment for realising ...
Shigeaki Zaima, Osamu Nakatsuka, Noriyuki Taoka, Masashi Kurosawa, Wakana Takeuchi, Mitsuo Sakashita   +5 more
doaj   +1 more source

THE INFLUENCE OF STRUCTURAL DEFECTS ON THE KINETICS OF DIFFUSION PROCESSES

Вестник Дагестанского государственного технического университета: Технические науки, 2016
At present there are various methods of control, based on various physical principles and possessing a wide variety of different sensitivity, diversity of applications.
Т. E. Sarkarov
doaj   +1 more source