Results 81 to 90 of about 11,104 (255)
Advanced Photonics Research, Volume 6, Issue 5, May 2025.Microfabrication using nano‐ to micron‐sized blocks has transformative potential for next‐gen electronics, optoelectronics, and materials. Traditional methods are limited by scalability and precision. STIC, a single‐laser system for precise colloid manipulation and immobilization using femtosecond lasers, is introduced that enables efficient 3D ...
Krishangi Krishna +4 more
wiley +1 more source
Atomic‐Scale Epitaxy for Tailoring Crystalline GeSbTe Alloys Into Bidimensional Phases
Advanced Materials InterfacesIn this study, we establish an accurate growth diagram—describing the phase, composition, and atomic stacking of Ge‐Sb‐Te alloys (GST)—that can be used as a prediction tool for thin film deposition.
Valeria Bragaglia +7 more
doaj +1 more source
Optical Characterization of AlAsSb Digital Alloy and Random Alloy on GaSb
Crystals, 2017 III-(As, Sb) alloys are building blocks for various advanced optoelectronic devices, but the growth of their ternary or quaternary materials are commonly limited by spontaneous formation of clusters and phase separations during alloying.
Bor-Chau Juang +5 more
doaj +1 more source
Advanced Science, EarlyView.Based on orbital magnetic moment control, a material design strategy is proposed for a giant converse magnetoelectric effect in multiferroic heterostructures. This study will pioneer a promising route toward low‐power spintronic devices with an electric field.
Takamasa Usami +5 more
wiley +1 more source
Solar Hydrogen Production with Metal/III–V Semiconductor Junction Monolithically Integrated on Si
ChemElectroChemGaAs is an excellent candidate for high‐performance photoelectrochemical water splitting due to its appropriate band‐edge and bandgap energies, as well as its excellent transport properties.
Hanh Vi Le +20 more
doaj +1 more source
Advanced Science, EarlyView.The symmetry‐driven coexistence of altermagnetism and (anti)ferroelectricity in perovskites shows a strong dimensional dependence. Upon reducing the system from bulk to the two‐dimensional limit, only C‐type antiferromagnetic order retains ferroelectrically switchable altermagnetism, whereas A‐ and G‐type orders become conventional antiferromagnets ...
Zhou Cui +6 more
wiley +1 more source
Advanced ScienceThe coherence of hole spin qubits in germanium planar heterostructures is limited by the hyperfine coupling to the nuclear spin bath due to 29Si and 73Ge isotopes.
Patrick Daoust +11 more
doaj +1 more source
Flexoelectricity in Photoconversion: Fundamentals, Materials, and Outlooks
Advanced Science, EarlyView.Mechanical bending of a flexible cantilever induces a strain gradient in the photoactive material. The resulting flexoelectric field couples with photovoltaic and photoconductive effects, modulating charge generation, separation, and collection. A comparative analysis of oxide perovskites, halide perovskites, and two‐dimensional materials is presented,
Xiang Huang, Feng Li, Rongkun Zheng
wiley +1 more source
Advanced Science, EarlyView.Ferroelectric Rashba semiconductors promise ultralow‐power devices but lack industry‐quality films. This work demonstrates CMOS‐compatible fabrication of high‐quality α‐GeTe(111) films via magnetron sputtering, enabled by a 5 nm Sb2Te3 seed layer. Structural and ferroelectric analyses show robust, switchable polarization comparable to MBE films, paving
Jules Lagrave +14 more
wiley +1 more source
Uranium Doped Gallium Nitride Epitaxial Thin Films
Advanced Electronic MaterialsGallium nitride (GaN) is near ubiquitous in modern day technologies, forming the backbone of solid‐state lighting and high‐power electronics. Engineering the physical properties of GaN has been investigated to some degree by the incorporation or doping ...
J. Pierce Fix +10 more
doaj +1 more source