Results 101 to 110 of about 53,075 (307)

Properties of epitaxial, (001)- and (110)-oriented (PbMg1/3Nb2/3O3)2/3-(PbTiO3)1/3 films on silicon described by polarization rotation

Science and Technology of Advanced Materials, 2016
Epitaxial (PbMg1/3Nb2/3O3)2/3-(PbTiO3)1/3 (PMN-PT) films with different out-of-plane orientations were prepared using a CeO2/yttria stabilized ZrO2 bilayer buffer and symmetric SrRuO3 electrodes on silicon substrates by pulsed laser deposition.
Muhammad Boota, Evert P. Houwman, Matthijn Dekkers, Minh D. Nguyen, Kurt H. Vergeer, Giulia Lanzara, Gertjan Koster, Guus Rijnders   +7 more
doaj   +1 more source

Morphology of Diamond Layers Grown on Different Facets of Single Crystal Diamond Substrates by a Microwave Plasma CVD in CH4-H2-N2 Gas Mixtures

Crystals, 2017
Epitaxial growth of diamond films on different facets of synthetic IIa-type single crystal (SC) high-pressure high temperature (HPHT) diamond substrate by a microwave plasma CVD in CH4-H2-N2 gas mixture with the high concentration (4%) of nitrogen is ...
Evgeny E. Ashkinazi, Roman A. Khmelnitskii, Vadim S. Sedov, Andrew A. Khomich, Alexander V. Khomich, Viktor G. Ralchenko   +5 more
doaj   +1 more source

Large‐Scale Growth of Self‐Poled Ferroelectric Rashba Semiconductor α‐GeTe(111) Thin Films: A Crucial Step Towards Future CMOS‐Compatible Ferroelectric Spintronic Devices

Advanced Science, EarlyView.
Ferroelectric Rashba semiconductors promise ultralow‐power devices but lack industry‐quality films. This work demonstrates CMOS‐compatible fabrication of high‐quality α‐GeTe(111) films via magnetron sputtering, enabled by a 5 nm Sb2Te3 seed layer. Structural and ferroelectric analyses show robust, switchable polarization comparable to MBE films, paving
Jules Lagrave, Nicolas Bernier, Thomas Jalabert, Yoann Brûlé, Damien Térébénec, Pierre Meilleur, Hervé Roussel, Jean‐Baptiste Dory, Oussama J. Mouawad, Thibault Chommaux, Cristian Mocuta, Dominique Thiaudière, Laurent Vila, Françoise Hippert, Pierre Noé   +14 more
wiley   +1 more source

Growth of Ordered Graphene Ribbons by Sublimation Epitaxy

Crystals, 2018
Ordered graphene ribbons were grown on the surface of 4° off-axis 4H-SiC wafers by sublimation epitaxy, and characterized by using scanning electron microscopy (SEM), atomic force microscopy (AFM) and micro-Raman spectroscopy (μ-Raman).
Shuxian Cai, Xingfang Liu, Xin Zheng, Zhonghua Liu   +3 more
doaj   +1 more source

Low-threshold, mirrorless emission at 981nm in an Yb,Gd,Lu:KYW inverted rib waveguide laser

In this work, we demonstrate 3-level laser operation in a Yb,Gd,Lu:KYW waveguide laser fabricated by combination of liquid phase epitaxy and Ar+ ion beam milling. Laser emission was observed at 981 nm with an absorbed threshold power of 23 mW and a slope
Aguiló, M., Bolaños, W., Shepherd, D.P., Choudhary, Amol, Díaz, F., Carvajal, J.J., Pradeesh, Kannan   +6 more
core   +1 more source

Photoelectric‐Coupled Ferroelectric Heterojunctions for Ultrahigh NO2 Sensing With Polarization‐Memory‐Assisted Interfacial Modulation

Advanced Science, EarlyView.
This study demonstrates a Bi2WO6/SrBi2Ta2O9 heterojunction where light‐driven ferroelectric polarization reversal couples with persistent photoconductivity, enabling exclusive NO2 selective room‐temperature sensing. The device achieves a two‐order‐of‐magnitude sensitivity enhancement over an unpolarized device, a sub‐ppb detection limit, and robust ...
Liping Tan, Xuefeng Hu, Ming Zhou, Weiwei Qing, Along Li, Zilong Wang, Mudan Feng, Shuang Zhao, Xiaoliang Wang, Peipei Li, Yali Bi, Wei Zhang   +11 more
wiley   +1 more source

Atomic‐Scale Epitaxy for Tailoring Crystalline GeSbTe Alloys Into Bidimensional Phases

Advanced Materials Interfaces
In this study, we establish an accurate growth diagram—describing the phase, composition, and atomic stacking of Ge‐Sb‐Te alloys (GST)—that can be used as a prediction tool for thin film deposition.
Valeria Bragaglia, Fabrizio Arciprete, Simone Prili, Yukihiko Takagaki, Antonio Massimiliano Mio, Riccardo Mazzarello, Jos Emiel Boschker, Raffaella Calarco   +7 more
doaj   +1 more source

Optical Characterization of AlAsSb Digital Alloy and Random Alloy on GaSb

Crystals, 2017
III-(As, Sb) alloys are building blocks for various advanced optoelectronic devices, but the growth of their ternary or quaternary materials are commonly limited by spontaneous formation of clusters and phase separations during alloying.
Bor-Chau Juang, Baolai Liang, Dingkun Ren, David L. Prout, Arion F. Chatziioannou, Diana L. Huffaker   +5 more
doaj   +1 more source

Junction Physics and Architectural Paradigms in Optoelectronic Semiconductor Fibers

Advanced Science, EarlyView.
Optoelectronic fibers are emerging as a key platform for distributed sensing, energy harvesting, and optical communication in deformable systems. Their performance is fundamentally governed by junction formation under confined, dynamic processing conditions.
Hailiang Wang, Wenshu Ouyang, Yuhang Xiao, Wei Yan, Meifang Zhu   +4 more
wiley   +1 more source

Solar Hydrogen Production with Metal/III–V Semiconductor Junction Monolithically Integrated on Si

ChemElectroChem
GaAs is an excellent candidate for high‐performance photoelectrochemical water splitting due to its appropriate band‐edge and bandgap energies, as well as its excellent transport properties.
Hanh Vi Le, Rozenn Bernard, Ludovic Largeau, Gilles Patriarche, Sylvain Febvre, Fatima Merhi, Bienvenu Boulingui Koumba, Antoine Létoublon, Christophe Levallois, Fauzia Jabeen, Sylvie Harel, Angus Rockett, Xerxes K. Steirer, Tony Rohel, Karine Tavernier, Julie Le Pouliquen, Yoan Léger, Nicolas Bertru, Bruno Fabre, Gabriel Loget, Charles Cornet   +20 more
doaj   +1 more source