Results 101 to 110 of about 11,104 (255)

Orientation‐Engineered Insulator‐Metal Transition in Vanadium Dioxide

Advanced Science, EarlyView.
Crystallographic orientation engineering in VO2/TiO2 heterostructures enables tunable insulator‐metal transitions. The high‐Miller‐index (102) orientation breaks in‐plane mirror symmetry, inducing anisotropic transport, while its inclined oxygen channels accelerate protonation kinetics.
Xuanchi Zhou, Xiaohui Yao, Wentian Lu, Chunwei Yao, Xiaomei Qiao   +4 more
wiley   +1 more source

Extrinsic and Intrinsic Charge Transfer at Interfaces of Membrane‐Based Oxide Heterostructures

Advanced Electronic Materials, EarlyView.
Freestanding oxides have emerged as a new opportunity to tailor oxides outside of the typical epitaxial constraints. We present the fabrication of TiO2‐terminated SrTiO3 membranes via direct growth control. We demonstrate competing ionic and electronic charge transfer in LaAlO3/SrTiO3 bilayers using near ambient pressure XPS.
Kapil Nayak, Marcus A. Wohlgemuth, Anton Kaus, Lisa Heymann, Alexandros Sarantopoulos, Lee‐Kang Huang, Christoph Baeumer, Regina Dittmann, Felix Gunkel   +8 more
wiley   +1 more source

High‐Performance Solar‐Blind Photodetectors Enabled by Post‐Annealing Optimization of Solution‐Processed Ga2O3 Films

Advanced Electronic Materials, EarlyView.
Post‐annealing atmosphere and temperature are optimized to regulate oxygen‐related defect states in solution‐processed Ga2O3 films. The optimized H2/N2 annealing enables enhanced photoconductive gain while maintaining low dark current, leading to high‐performance solar‐blind photodetectors with a responsivity of 7.5 × 102 A W−1 under 254 nm ...
Shiqi Yan, Dingding Ni, Yaqi Zhou, Zijian Ding, Zhanjun Shi, Jingrui Ma, Baoqing Zhang, Jiawei Zhang, Xiao Wei Sun, Qian Xin, Aimin Song   +10 more
wiley   +1 more source

Effects of Doping, Disorder, and Compensation on Electron Conduction in Si‐Doped k‐Ga2O3 Close to the Metal‐to‐Insulator Transition

Advanced Electronic Materials, EarlyView.
Self‐compensation effects attributed to doping‐dependent shift‐defects at APBs Validation of Hall data for VRH transport near the MIT Persistence of VRH transport for any SiH4 flow in Si‐doped κ‐Ga2O3 due to high compensation coupling transport and EPR data as strategy to study electronic properties and doping T‐dependence of transport data agrees with
Antonella Parisini, Hans Jürgen von Bardeleben, Ildicò Cora, Zsolt Fogarassy, Paola Alippi, Vincenzo Fiorentini, Ian Vickridge, Piero Mazzolini, Alessio Bosio, Roberto Fornari   +9 more
wiley   +1 more source

Thick layers liquid-phase epitaxy method

Технологія та конструювання в електронній апаратурі, 2013
On the basis of the authors' model of mass transfer, a new method for thick layers epitaxy has been developed. The method provides for the growth of different parts of the layers in two-layer systems obtained from the solution-melt and allows to control ...
S. N. Dranchuk, V. A. Zavadskiy, V. A. Mokritskiy   +2 more
doaj  

Thickness‐Tuned Berry Curvature in vdW Epitaxial Cr3Te4 Ultrathin Films

Advanced Electronic Materials, EarlyView.
An investigation of thickness‐modulated Berry curvature in stoichiometric, high‐quality van der Waals epitaxial Cr3Te4 films. Surface and interface Te(CrTe2)‐termination enables Fermi level shifting via thickness variation, modulating Berry curvature near the band crossing point, thereby establishing termination engineering (may called Terminonics) as ...
Minghui Gu, Guangyao Miao, Xiaoran Liu, Weihua Wang, Dongdong Xiao, Meng Meng, Jiandong Guo   +6 more
wiley   +1 more source

Combinatorial Survey of Structural Phase Distribution and Magnetism in Fe‐Ge‐Te Composition‐Spread Thin Film Libraries

Advanced Electronic Materials, EarlyView.
ABSTRACT Magnetic 2‐dimensional (2D) van der Waals (vdW) materials have garnered tremendous attention. The vdW ferromagnet Fe5Ge1Te2 has a Curie temperature Tc of ≈ 270 K, which is tailorable by tuning the stoichiometry and the Fe deficiency to reach room temperature.
Chih‐Yu Lee, Takahiro Yamazaki, Peng Yan, Ryan Kim, Masato Kotsugi, Efrain E. Rodriguez, Joseph W. Bennett, Ichiro Takeuchi   +7 more
wiley   +1 more source

Domain structures in ferroelectric epitaxial WO3 thin films [PDF]

BIO Web of Conferences
Van Der Veer Ewout, Feringa Stijn, Eckstein Jack, Kooi Bart, Noheda Beatriz   +4 more
doaj   +1 more source

Atomic Scale Control of Thermal Conductivity in LaMnO3/SrMnO3 Superlattices

Advanced Electronic Materials, EarlyView.
Interface‐dominated cross‐plane thermal transport in [(LaMnO3)m/(SrMnO3)n]10 superlattices can be controlled by the octahedral rotation/tilt angle φOOR of the MnO6 octahedra, which as well is controlled by the “m/n” ratio. ABSTRACT We report atomic scale structure and phonon thermal transport in (LaMnO3)m/(SrMnO3)n/SrTiO3(100) superlattices (LMO/SMO ...
H. Ulrichs, V. Roddatis, U. Roß, J. P. Bange, D. Meyer, S. Lopatin, V. Radisch, D. Metternich, I. V. Maznichenko, S. Ostanin, R. Egoavil, I. Lazić, V. Moshnyaga   +12 more
wiley   +1 more source

High‐Detectivity InGaAs/GaAsP Superlattice PIN Photodetector with a Thin Absorber on GaAs substrate for 1100 nm Applications

Advanced Electronic Materials, EarlyView.
A high‐performance strain‐compensated InGaAs/GaAsP superlattice SWIR photodetector was successfully grown by MOCVD on a scalable 100 mm GaAs platform. Combining excellent structural quality with strong optoelectronic performance, the device delivers a low dark current density of 2.3 × 10−7 A/cm2 and a detectivity of 1.9 × 1011 Jones at 1100 nm ...
Rémy Tribout, Alexis Palais, Driss Mouloua, Mickael Martin, Frédérique Ducroquet, Sébastien Cavalaglio, Badreddine Smiri, Jeremy Da Fonseca, Jeremy Moeyaert, Clara Cornille, Franck Bassani, Charles Leroux, Veronika Letka, Vita Mergner, David Cooper, Evan Oudot, Christophe Duluard, Sophie Barbet, Christophe Jany, Thierry Baron   +19 more
wiley   +1 more source