Results 101 to 110 of about 142,351 (345)

Investigation of Defect Propagation in 4H-SiC: From Substrate to Epitaxial Layers

Applied Sciences
Silicon carbide (SiC) is the leading wide bandgap semiconductor for high-power and high-temperature electronics, but the high defect density still limits device performance.
Francesco Maria Fiorino, Francesco Ruffino, Alberto Catena   +2 more
doaj   +1 more source

Growth of Ordered Graphene Ribbons by Sublimation Epitaxy

Crystals, 2018
Ordered graphene ribbons were grown on the surface of 4° off-axis 4H-SiC wafers by sublimation epitaxy, and characterized by using scanning electron microscopy (SEM), atomic force microscopy (AFM) and micro-Raman spectroscopy (μ-Raman).
Shuxian Cai, Xingfang Liu, Xin Zheng, Zhonghua Liu   +3 more
doaj   +1 more source

Buried Unstrained Germanium Channels: A Lattice‐Matched Platform for Quantum Technology

Advanced Science, EarlyView.
ABSTRACT Strained germanium (ε$\varepsilon$‐Ge) and strained silicon (ε$\varepsilon$‐Si) buried quantum wells have enabled advanced spin‐qubit quantum processors. However, in the absence of suitable lattice‐matched substrates, ε$\varepsilon$‐Ge and ε$\varepsilon$‐Si are deposited on defective, metamorphic SiGe buffers, which may impact device ...
Davide Costa, Patrick Del Vecchio, Karina Hudson, Lucas E. A. Stehouwer, Alberto Tosato, Davide Degli Esposti, Vladimir Calvi, Luca Moreschini, Mario Lodari, Stefano Bosco, Giordano Scappucci   +10 more
wiley   +1 more source

Optical Characterization of AlAsSb Digital Alloy and Random Alloy on GaSb

Crystals, 2017
III-(As, Sb) alloys are building blocks for various advanced optoelectronic devices, but the growth of their ternary or quaternary materials are commonly limited by spontaneous formation of clusters and phase separations during alloying.
Bor-Chau Juang, Baolai Liang, Dingkun Ren, David L. Prout, Arion F. Chatziioannou, Diana L. Huffaker   +5 more
doaj   +1 more source

Synaptic κ‐Ga2O3 Photodetectors for Privacy‐Enhancing Neuromorphic Computing

Advanced Science, EarlyView.
We report on a single‐element neuromorphic sensor based on the persistent photoconductivity (PPC) of κ‐phase Ga2O3 capable of sensing ultraviolet light and harnessing intrinsic data privacy. The approach establishes a materials‐enabled pathway toward compact, intelligent, and privacy‐enhancing optoelectronic hardware for next‐generation edge systems ...
Yanqing Jia, Heming Lin, Hongliang Chang, Wenqing Niu, Yue Wang, Hang Lu, Abdullah AlQuwayzani, Yara Banda, Long Chen, Qingxiao Wang, Bambar Davaasuren, Mohamed Ben Hassine, Tien Khee Ng, Boon S. Ooi   +13 more
wiley   +1 more source

Atomic‐Scale Epitaxy for Tailoring Crystalline GeSbTe Alloys Into Bidimensional Phases

Advanced Materials Interfaces
In this study, we establish an accurate growth diagram—describing the phase, composition, and atomic stacking of Ge‐Sb‐Te alloys (GST)—that can be used as a prediction tool for thin film deposition.
Valeria Bragaglia, Fabrizio Arciprete, Simone Prili, Yukihiko Takagaki, Antonio Massimiliano Mio, Riccardo Mazzarello, Jos Emiel Boschker, Raffaella Calarco   +7 more
doaj   +1 more source

Solution‐Processed Nickel Oxide as Efficient Hole Transport Layers in Inverted Perovskite Solar Cells

Advanced Science, EarlyView.
This review summarizes recent advances in four mainstream solution‐based techniques for synthesizing NiOx hole‐transport layers for high‐performance perovskite photovoltaic cells, and highlights the key challenges and future prospects for achieving high efficiency, long‐term stability, and low‐cost perovskite photovoltaic technologies toward ...
Zheng Wu, Zeliang Qiu, Yuxin Tao, Yuyang Qiu, Yuwei Duan, Jianxing Xia, Feng Li, Qiang Peng   +7 more
wiley   +1 more source

Solar Hydrogen Production with Metal/III–V Semiconductor Junction Monolithically Integrated on Si

ChemElectroChem
GaAs is an excellent candidate for high‐performance photoelectrochemical water splitting due to its appropriate band‐edge and bandgap energies, as well as its excellent transport properties.
Hanh Vi Le, Rozenn Bernard, Ludovic Largeau, Gilles Patriarche, Sylvain Febvre, Fatima Merhi, Bienvenu Boulingui Koumba, Antoine Létoublon, Christophe Levallois, Fauzia Jabeen, Sylvie Harel, Angus Rockett, Xerxes K. Steirer, Tony Rohel, Karine Tavernier, Julie Le Pouliquen, Yoan Léger, Nicolas Bertru, Bruno Fabre, Gabriel Loget, Charles Cornet   +20 more
doaj   +1 more source

Progress in Strain Engineering of 2D‐Integrated Heterostructures for Ultrasensitive Sensors

Advanced Science, EarlyView.
 . ABSTRACT Two‐dimensional (2D) integrated heterostructures have emerged as a cornerstone in the advancement of next‐generation sensor technologies. These heterostructures, which combine materials with different dimensionalities, have led to significant breakthroughs in sensing performance and device integration.
That Buu Ton, Tuan Sang Tran, Duc Khanh Tran, Van Thanh Dau, Dzung Viet Dao   +4 more
wiley   +1 more source

Nuclear Spin‐Free 70Ge/28Si70Ge Quantum Well Heterostructures Grown on Industrial SiGe‐Buffered Wafers

Advanced Science
The coherence of hole spin qubits in germanium planar heterostructures is limited by the hyperfine coupling to the nuclear spin bath due to 29Si and 73Ge isotopes.
Patrick Daoust, Nicolas Rotaru, Debojyoti Biswas, Sebastian Koelling, Eloise Rahier, Alexis Dubé‐Valade, Patrick Del Vecchio, Marcus S. Edwards, Mukhlasur Tanvir, Ebrahim Sajadi, Joe Salfi, Oussama Moutanabbir   +11 more
doaj   +1 more source