Results 121 to 130 of about 53,075 (307)

Development of a Nb‐Based Semiconductor‐Superconductor Hybrid 2DEG Platform

Advanced Electronic Materials
Semiconductor‐superconductor hybrid materials are used as a platform to realize Andreev bound states, which hold great promise for quantum applications.
Sjoerd Telkamp, Tommaso Antonelli, Clemens Todt, Manuel Hinderling, Marco Coraiola, Daniel Haxell, Sofieke C. ten Kate, Deividas Sabonis, Peng Zeng, Rüdiger Schott, Erik Cheah, Christian Reichl, Fabrizio Nichele, Filip Krizek, Werner Wegscheider   +14 more
doaj   +1 more source

Threshold reduction in strained-layer InGaAs/GaAs quantum well lasers by liquid phase epitaxy regrowth

, 1998
When liquid phase epitaxy regrowth at 780 degrees C for 2 h is applied to the samples after molecular beam epitaxy, a decrease of the threshold current density in strained InGaAs/GaAs quantum well lasers by a factor of 3 to 4 is obtained. We suggest that
Ge WK, Yang GW, Lu LW, Zhang YH, Wang J, Lu LW,Chinese Acad Sci,Inst Semicond,Integrated Optoelect Lab,Lab Semicond Mat Sci,Beijing 100083,Peoples R China.   +5 more
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Zinc Sulfide Enabling Remarkable Surface Passivation of Crystalline Silicon

Advanced Energy Materials, EarlyView.
Polycrystalline ZnS films capped by Al2O3 provide outstanding surface passivation performance. The excellent lattice agreement between c‐Si and ZnS combined with a hydrogenation step result in extremely low interface state density (≈ 1×1010 cm−2 eV−1) and recombination current pre‐factor (1.0 fA/cm2), revealing a new passivation strategy for ...
Gabriel Bartholazzi, Elodie Galinier, Felipe Kremer, Piyumi Kodithuwakku, Daniel Macdonald, Lachlan Black   +5 more
wiley   +1 more source

Liquid phase epitaxy of Al0.3Ga0.7As islands

, 2004
Self-organized Al0.3Ga0.7As islands generated on the (100) facet are achieved by liquid phase epitaxy. Three particularly designed experimental conditions-partial oxidation, deficient solute and air quenching-result in defect-free nucleation.
Sun, J, Chinese Acad Sci, Acad Sinica, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. 电子邮箱地址: albertjefferson@sohu.com, Wang, ZY, Sun, YC, Zhang, HZ, Hu, LZ, Sun, J   +5 more
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Epitaxy-through-holes process for epitaxy wrap-through solar cells

, 2012
S.2565-2569The Epitaxy Wrap-Through (EpiWT) cell is a rear contact version of the Epitaxial Wafer-Equivalent cell which is a crystalline silicon thin-film solar cell developed at Fraunhofer ISE.
Reber, S., Brinkmann, N., Mitchell, E.J.
core   +1 more source

Advancements in Graphdiyne‐Based Multiscale Catalysts for Green Hydrogen Energy Conversion

Advanced Intelligent Discovery, EarlyView.
This review systematically explores the fundamental characteristics of graphdiyne (GDY), cutting‐edge field of GDY‐based multiscale catalysts within sustainable energy conversion systems.Special emphasis is placed on the structure‒property relationships in different reactions.
Qian Xiao, Lu Qi, Siao Chen, Yurui Xue
wiley   +1 more source

Strain Programming of Oxygen Octahedral Symmetry in Perovskite Oxide Thin Films

Advanced Materials Interfaces
The collective rotations of oxygen octahedra play an important role in determining the physical properties of functional perovskite oxides. The epitaxial strain can serve as an effective means to modify the oxygen octahedral symmetry (OOS), i.e., oxygen ...
Yunkyu Park, Seoung‐Hun Kang, Jeongkeun Song, Sang Woon Hwang, Shan Lin, Jong Mok Ok, Fazhi Yang, Hwangsun Kim, Andrew R. Lupini, Mina Yoon, Sangmoon Yoon, Hua Zhou, Ho Nyung Lee   +12 more
doaj   +1 more source

AI‐Guided Co‐Optimization of Advanced Field‐Effect Transistors: Bridging Material, Device, and Fabrication Design

Advanced Intelligent Discovery, EarlyView.
This article outlines how artificial intelligence could reshape the design of next‐generation transistors as traditional scaling reaches its limits. It discusses emerging roles of machine learning across materials selection, device modeling, and fabrication processes, and highlights hierarchical reinforcement learning as a promising framework for ...
Shoubhanik Nath, Shauryaraj K. Jilkar, Aditya Udgaonkar, Yu (Joe) Lu, Ali Mesbah   +4 more
wiley   +1 more source

Epitaxy of ultrathin Fe₃O₄ films on SrTiO₃(001): influence of growth parameters on the formation of coexisting (111)- and (001)-oriented phases. [PDF]

J Appl Crystallogr
Ultrathin Fe3O4 films grown on SrTiO3(001) were systematically studied with respect to film growth parameters to clarify the coexistence of (111) and (001) orientations. X‐ray diffraction analyses reveal the formation of an intermediate (111)‐oriented phase during the initial growth stage, which persists even after preferential (001) growth is ...
Alexander A, Ruwisch K, Thien J, Weissbach A, Pollenske T, Zhang B, Schulte F, Gutowski O, Vlad A, Coati A, Wollschläger J.   +10 more
europepmc   +2 more sources

THEORETICAL TREATMENT OF A3B5 CHLORIDE VAPOR-PHASE EPITAXY - GROWTH, DOPING, OPTIMIZATION

, 1993
A theoretical description of chloride vapour-phase epitaxy (CVPE) has been proposed which contains two-dimensional (2D) gas-dynamic equations for transport of reactive components and kinetic equations for surface growth processes connected by nonlinear ...
IPATOVA IP, DOSTOV VL, KULIKOV AY, DOSTOV VL IOFFE INSTST PETERSBURG 194021RUSSIA   +3 more
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