Results 121 to 130 of about 53,093 (291)
Surface acoustic waves in semi-insulating Fe-doped GaN films grown by hydride vapor phase epitaxy [PDF]
, 2014 The propagation properties of surface acoustic waves (SAWs) in semi-insulating Fe-doped GaN films grown on sapphire substrates by hydride vapor phase epitaxy are investigated.
Liu ZH(刘争晖) +7 more
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Growth‐Pathway‐Controlled van der Waals Epitaxy of Phase‐Selective Tin Sulfides
Advanced Science, EarlyView.Growth‐pathway‐controlled van der Waals epitaxy enables deterministic phase selection and strain engineering in tin sulfide/WSe2 heterostructures. Direct growth of SnS induces substrate‐mediated strain and phase evolution, whereas sequential growth through an SnS2 buffer suppresses strain transfer and stabilizes pristine α‐SnS, revealing a versatile ...
Jaehyeok Lee +2 more
wiley +1 more source
Advanced ScienceThe coherence of hole spin qubits in germanium planar heterostructures is limited by the hyperfine coupling to the nuclear spin bath due to 29Si and 73Ge isotopes.
Patrick Daoust +11 more
doaj +1 more source
Luminescence properties of ZnSe films grown by hot wall epitaxy [PDF]
, 1997 The photoluminescence (PL) properties of ZnSe films grown by hot wall epitaxy are reported. The PL spectra show clear neutral donor-bound exciton peak; donor acceptor pair (DAP) peak, conduction band to acceptor (CA) peak, and their phonon replicas until
Wong HM, Cheah KW, Xia JB
core
Advanced Science, EarlyView.Monolayer PtSe2 films are successfully grown via optimized MOCVD, achieving uniform coverage over a 1.5 cm × 1.5 cm area. Oxygen‐assisted growth effectively removes carbon impurities, ensuring high film quality. Array‐level FETs based on monolayer PtSe2 channels demonstrate low off‐current and high ION/IOFF ratios, highlighting the potential of PtSe2 ...
Yuseok Kim +22 more
wiley +1 more source
TEM study of dislocations in ZnTe/GaAs heterostructure grown by hot-wall epitaxy [PDF]
, 1999 A ZnTe layer grown on GaAs substrate by hot-wall epitaxy (HWE) was studied using transmission electron microscopy (TEM). For a (110) cross-sectional specimen, its (001) ZnTe/GaAs interface was analysed by large angle stereo-projection (LASP) and high ...
Han PD
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Extrinsic and Intrinsic Charge Transfer at Interfaces of Membrane‐Based Oxide Heterostructures
Advanced Electronic Materials, EarlyView.Freestanding oxides have emerged as a new opportunity to tailor oxides outside of the typical epitaxial constraints. We present the fabrication of TiO2‐terminated SrTiO3 membranes via direct growth control. We demonstrate competing ionic and electronic charge transfer in LaAlO3/SrTiO3 bilayers using near ambient pressure XPS.
Kapil Nayak +8 more
wiley +1 more source
Uranium Doped Gallium Nitride Epitaxial Thin Films
Advanced Electronic MaterialsGallium nitride (GaN) is near ubiquitous in modern day technologies, forming the backbone of solid‐state lighting and high‐power electronics. Engineering the physical properties of GaN has been investigated to some degree by the incorporation or doping ...
J. Pierce Fix +10 more
doaj +1 more source
Single Layer Growth of Strained Epitaxy at Low Temperature [PDF]
, 2003 Contacting mode atomic force microscopy (AFM) is used to measure the In0.asGao.65As/GaAs epilayer grown at low temperature (460°C). Unlike the normal layer-by-layer growth (FvdM mode) or self-organized islands growth (SK mode) ,samples grown under 460 C ...
Duan Ruifei +3 more
core
Advanced Energy Materials, EarlyView.A flexible InGaP/GaAs/InGaAs triple‐junction platform encapsulated with ultrathin glass enables unassisted electrocatalysis and space applications by providing robust protection against chemically aggressive and radiation‐rich environments. This work establishes a unified III–V multijunction photovoltaic platform that bridges space photovoltaics and ...
Sukkyu Hong +10 more
wiley +1 more source