Results 141 to 150 of about 62,943 (302)

Ordered InAs nanodots formed on the patterned GaAs substrate by molecular beam epitaxy

, 2011
Ordered indium arsenide (InAs) nanodots are formed by molecular beam epitaxy (MBE) on patterned gallium arsenide (GaAs) substrates, which are prepared by implanting manganese (Mn) ions through anodic aluminum oxide (AAO) membranes into the GaAs wafers ...
Wang, ZG, Jin, L (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912,A 35,Tsinghua E Rd, Beijing 100083, Peoples R China,jinlan06@semi.ac.cn, Qu, SC, qsc@semi.ac.cn, Zhou, HY, Jin, L   +5 more
core  

Atomic‐Scale Mechanisms of Anisotropic Thermal Decomposition in GeSn Alloys With Stepwise Pinning

Advanced Electronic Materials, EarlyView.
Combining in situ TEM with DFT calculations, this work elucidates atomic‐scale anisotropic thermal decomposition in GeSn films, identifying laminar receding in defect‐free regions and stepwise pinning at stacking faults. Driven by crystallographic anisotropy and defect‐mediated energetic penalties, these findings establish a physical framework for ...
YiXin Wang, Qi Liu, XiYan Chang, Chi Xu, Tao Wang, XinZheng Li, ChunLai Xue   +6 more
wiley   +1 more source

Lattice-Mismatched van der Waals Epitaxy and Photoluminescence of Two-Dimensional Ga _<i>x</i> In_1-<i>x</i> Se Alloys on Si(111). [PDF]

Cryst Growth Des
Muzzillo CP, McMahon WE, Zakutayev A, Norman AG.   +3 more
europepmc   +1 more source

Colossal Modulation of Mechanical Resonance with temperature in single‐Crystalline SrTiO3 Microbridges Integrated on Silicon

Advanced Electronic Materials, EarlyView.
The structural characteristics and resonant mechanical behavior of suspended microbridges comprised of single‐crystalline SrTiO3 that has been grown on silicon are presented. Due to differences in thermal expansion between the SrTiO3 and silicon, we find that the resonant frequencies of the microbridges are not only enhanced, but also hyper‐sensitive ...
Deepa Guragain, Laveeza Ahmad, Alexander A. Puretzky, Carson Hester, Zheng Hui Lim, Richard Le, Sundeep Mukherjee, Ye Cao, Joseph H. Ngai   +8 more
wiley   +1 more source

Growth-Pathway-Controlled van der Waals Epitaxy of Phase-Selective Tin Sulfides. [PDF]

Adv Sci (Weinh)
Lee J, Kim J, Lee GH.
europepmc   +1 more source

InGaP/GaAs/InGaAs Multijunction Flexible Photovoltaics With Chemical Robustness and Radiation Hardness for Unassisted Electrocatalysis and Space Applications

Advanced Energy Materials, EarlyView.
A flexible InGaP/GaAs/InGaAs triple‐junction platform encapsulated with ultrathin glass enables unassisted electrocatalysis and space applications by providing robust protection against chemically aggressive and radiation‐rich environments. This work establishes a unified III–V multijunction photovoltaic platform that bridges space photovoltaics and ...
Sukkyu Hong, Seungwan Woo, Hoki Son, Hyun‐Beom Shin, Eungbeom Yeon, Jeongeun Mo, Daehwan Jung, Ho Won Jang, Ho Kwan Kang, Sung‐Min Lee, Won Jun Choi   +10 more
wiley   +1 more source

Porous-lift-off germanium membranes as lightweight, flexible, and cost-effective template for III-V space solar cells: a review. [PDF]

Commun Eng
Ali A, En-Nadir R, Mahboub CK, Mokeddem IE, Ayari A, Mével B, Ripa J, Turala A, Chapotot A, Proost P, Sharma R, Cho J, Dessein K, Boucherif A.   +13 more
europepmc   +1 more source

TEM study of dislocations in ZnTe/GaAs heterostructure grown by hot-wall epitaxy

, 1999
A ZnTe layer grown on GaAs substrate by hot-wall epitaxy (HWE) was studied using transmission electron microscopy (TEM). For a (110) cross-sectional specimen, its (001) ZnTe/GaAs interface was analysed by large angle stereo-projection (LASP) and high ...
Han PD
core  

AI‐Guided Co‐Optimization of Advanced Field‐Effect Transistors: Bridging Material, Device, and Fabrication Design

Advanced Intelligent Discovery, EarlyView.
This article outlines how artificial intelligence could reshape the design of next‐generation transistors as traditional scaling reaches its limits. It discusses emerging roles of machine learning across materials selection, device modeling, and fabrication processes, and highlights hierarchical reinforcement learning as a promising framework for ...
Shoubhanik Nath, Shauryaraj K. Jilkar, Aditya Udgaonkar, Yu (Joe) Lu, Ali Mesbah   +4 more
wiley   +1 more source

Elevated Source/Drains for 50nm MOSFETs using HCl-Free Selective Epitaxy

, 2005
Waite, A.M., Hemment, P.L.F., Ashburn, P., Bagnall, D.M., Achard, H., Osman, K., Ernst, T., Deleonibus, S., Wang, Y., Zhang, W., Lloyd, N.S., Evans, A.G.R.   +11 more
core   +1 more source