Results 141 to 150 of about 53,093 (291)
On the electrical and structural properties of boron delta layers in silicon [PDF]
This thesis describes the first successful growth of boron δ layers using silicon MBE. SIMS has been used to demonstrate that the layer widths are ∽2nm as has been confirmed by TEM.
Mattey, Nevil L.
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Complex quantum ring structures formed by droplet epitaxy [PDF]
, 2006 Well-defined complex quantum ring structures formed by droplet epitaxy are demonstrated. By varying the temperature of the crystallizing Ga droplets and changing the As flux, GaAs/AlGaAs quantum single rings and concentric quantum double rings are ...
Xia JB (Xia Jianbai) +8 more
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Carbon Energy, EarlyView.High‐entropy perovskite oxides enable tunable structures and properties through multi‐cation disorder and entropy stabilization. This review summarizes advances in synthesis, structural and defect engineering, and their applications in OER/ORR, CO2RR, and electrochemical energy storage, highlighting in situ characterization and modeling that clarify ...
Obeylaw Moyo +8 more
wiley +1 more source
Nucleation-Limited Kinetics of GaAs Nanostructures Grown by Selective Area Epitaxy: Implications for Shape Engineering in Optoelectronics Devices [PDF]
This dataset corresponds to the following manuscript: Zendrini, M., Dubrovskii, V., Rudra, A., Dede, D., Fontcuberta i Morral, A., Piazza, V. “Nucleation-Limited Kinetics of GaAs Nanostructures Grown by Selective Area Epitaxy: Implications for Shape ...
Zendrini, Michele +4 more
core +1 more source
The Dimensional Revolution of Phosphorus: From Allotropicity to Battery System Applications
ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.Phosphorus‐based materials are promising high‐capacity anodes classified by dimension (0D–3D) to systematically explore their properties and composite strategies. When combined with materials such as carbon to form heterostructures, the electrical conductivity and stability are effectively enhanced.
Shuhan Zhang +8 more
wiley +1 more source
Ge composition saturation behavior during low-temperature Si1-xGex growth by disilane and solid Ge molecular beam epitaxy [PDF]
, 1997 Ge composition dependence on the Ge cell temperature has been studied during the growth of Si1-xGex by disilane and solid Ge molecular beam epitaxy at a substrate temperature of 500 degrees C.
Liu JP +5 more
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ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.This article reviews the fundamental consequences of strong correlations on excitations and elementary steps of energy conversion leading to new opportunities to control energy conversion. Examples include friction at surfaces, thermal transport, and photovoltaic energy conversion.
Vasily Moshnyaga +14 more
wiley +1 more source
Thick layers liquid-phase epitaxy method
Технологія та конструювання в електронній апаратурі, 2013 On the basis of the authors' model of mass transfer, a new method for thick layers epitaxy has been developed. The method provides for the growth of different parts of the layers in two-layer systems obtained from the solution-melt and allows to control ...
S. N. Dranchuk +2 more
doaj
Low thermal conductance platforms for mK tunnelling coolers [PDF]
The impact of the O2 content in SF6-O2 gas mixtures on the etch rate and sidewall profile of Silicon (Si), Germanium (Ge) and phosphorous doped Germanium (Ge:P) in reactive ion etching has been studied.
Wongwanitwattana, Chalermwat
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, 1991 Proceedings of the 3rd International Symposium on Molecular Beam Epitaxy, Velico Tarnovo, Bulgaria ...
Minchev, G M, Pramatarova, Lilyana
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