Results 141 to 150 of about 11,104 (255)

Epitaxial Integration of III–V Membrane Photodetectors With Lateral p–i–n Junctions on the Silicon‐On‐Insulator Waveguide Platform

Laser &Photonics Reviews, EarlyView.
Epitaxial growth forms III–V membranes directly atop the silicon waveguide layer on SOI, while in‐plane in situ doping defines lateral p–i–n InP/InGaAs junctions in a single growth step. The membrane photodetectors achieve 50 Gb/s NRZ‐OOK operation.
Zhao Yan, Yifu Chen, Martin Ebert, Ka Ming Wong, Wenjie Wang, Tim Grieb, Florian F. Krause, Andreas Rosenauer, Graham T. Reed, David J. Thomson, Qiang Li   +10 more
wiley   +1 more source

Epitaxy of ultrathin Fe₃O₄ films on SrTiO₃(001): influence of growth parameters on the formation of coexisting (111)- and (001)-oriented phases. [PDF]

J Appl Crystallogr
Alexander A, Ruwisch K, Thien J, Weissbach A, Pollenske T, Zhang B, Schulte F, Gutowski O, Vlad A, Coati A, Wollschläger J.   +10 more
europepmc   +1 more source

Electrochemical Investigation of Alumina Thin Films for Electronic Packaging

Materials and Corrosion, EarlyView.
Surface morphology of alumina films on copper substrates produced by ALD. Characterization of the alumina film properties by FTIRR (left) and EIS (right). ABSTRACT Thin films of alumina processed by atomic layer deposition (ALD) were electrochemically investigated by impedance spectroscopy (EIS) and linear sweep voltammetry (LSV) as well as material ...
M. Schneider, U. Gierth, U. Langklotz, M. Krug, S. Höhn   +4 more
wiley   +1 more source

Review of the Gate Structure for Normally Off p-GaN High-Electron-Mobility Transistors Towards High Performances. [PDF]

Materials (Basel)
Pu T, Li X, Li L, Ao JP.
europepmc   +1 more source

Photovoltaic Effect in a III‐IV‐V Compound Semiconductor

Progress in Photovoltaics: Research and Applications, EarlyView.
A large reduction of the GaAs band gap is obtained with incorporation of 6.5% Ge during epitaxy without introducing extended defects or composition inhomogeneity. Heterojunction solar cell devices were fabricated with 0.76‐V open circuit voltage and an internal quantum efficiency above 40% at energies below the bandgap of the GaAs emitter.
José M. Ripalda, Pablo Caño, Micaela Rodriguez‐Peña, Miguel Angel Sevillano‐Bendezú, Aurelia Trevisan, Raghavendra Juluri, Aitana Cano, Iván García, Alicia Gonzalo, Enrique Navarro, Jeronimo Buencuerpo, Paul Koenraad, Ana María Sanchez, Yolanda Gonzalez   +13 more
wiley   +1 more source

Superconductivity and suppressed monoclinic distortion in FeTe films enabled by higher-order epitaxy. [PDF]

Nat Commun
Sato Y, Nagahama S, Kitou S, Sagayama H, Belopolski I, Yoshimi R, Kawamura M, Tsukazaki A, Kanazawa N, Nomoto T, Arita R, Arima TH, Kawasaki M, Tokura Y.   +13 more
europepmc   +1 more source

Two‐step annealing process drives high thermoelectric performance of n‐type Bi2Te3 flexible films

Responsive Materials, EarlyView.
To address the relatively low carrier mobility in n‐type Bi2Te3 films prepared by magnetron sputtering, we developed a two‐step annealing process, including in situ and post‐annealing heat treatment. This method yields a high mobility (132.54 cm2 V−1 s−1) and S2σ (14.5 μW cm−1 K−2) by promoting pronounced grain growth and strengthening the preferred ...
Liang‐Cao Yin, Xinhua Lu, Wei‐Di Liu, Ji‐Wei Hou, De‐Zhuang Wang, Siqi Liu, Hao Wu, Meng Li, Xiao‐Lei Shi, Wei‐Nan Xie, Zhi‐Gang Chen, Qingfeng Liu   +11 more
wiley   +1 more source

Optimization and Simulation on Gas Flow and Temperature Fields on the Homoepitaxial Growth of N-Doped 4H-SiC Wafers. [PDF]

Micromachines (Basel)
Zhang G, Li T, Liu Y, Sun J, Zhang S.
europepmc   +1 more source

Low Temperature Site‐Specific Pulsed Laser Annealing of MoS2

Small, EarlyView.
The application of laser pulses, of extremely short duration, is investigated as a potential new method to modify the atomic structure of ultrathin 2D materials for use in the creation of future electrical devices. The process is efficient, offering a site‐specific functionality, where regions of an electronic device that only requires annealing is ...
Nazar Farid, Aashi Gupta, Pavlina Metaxa, A Arifutzzaman, Hariprasad Kuduvan, Rahil Haria, Michele Conroy, Ian Campbell, Ageeth A Bol, James Connolly, Jun Lin, Ian Povey, Ray Duffy, Gerard M O'Connor   +13 more
wiley   +1 more source

Controllable Growth of Ordered In-Plane Ge Hut Wires on Trench-Patterned Si Substrate. [PDF]

Nanomaterials (Basel)
Gao F, Ming M, Zhang JY, Zhang JJ.
europepmc   +1 more source