Results 161 to 170 of about 53,093 (291)

Epitaxial Integration of III–V Membrane Photodetectors With Lateral p–i–n Junctions on the Silicon‐On‐Insulator Waveguide Platform

Laser &Photonics Reviews, EarlyView.
Epitaxial growth forms III–V membranes directly atop the silicon waveguide layer on SOI, while in‐plane in situ doping defines lateral p–i–n InP/InGaAs junctions in a single growth step. The membrane photodetectors achieve 50 Gb/s NRZ‐OOK operation.
Zhao Yan, Yifu Chen, Martin Ebert, Ka Ming Wong, Wenjie Wang, Tim Grieb, Florian F. Krause, Andreas Rosenauer, Graham T. Reed, David J. Thomson, Qiang Li   +10 more
wiley   +1 more source

The Need for Fundamental Photovoltaics Research to Ensure Energy Security

Progress in Photovoltaics: Research and Applications, EarlyView.
The center of this graphic focuses on the core of this paper—that fundamental research is central to the continued development of the photovoltaic (PV) industry. To the left, we have depictions of what is being studied—PV materials, PV cell structures, and PV module structures.
Rebecca Saive, Gavin Conibeer, Lisanne M. Einhaus, Jean‐François Guillemoles, Koami Soulemane Hayibo, Karin Hinzer, Jacob J. Krich, Martha Lenio, Michael P. Nielsen, Frederick U. Nitta, Ian R. Sellers, Daniel Suchet, Eric Tervo, Tom Tiedje, Jelle Westerhof   +14 more
wiley   +1 more source

Elevated Source/Drains for 50nm MOSFETs using HCl-Free Selective Epitaxy [PDF]

, 2005
Waite, A.M., Hemment, P.L.F., Ashburn, P., Bagnall, D.M., Achard, H., Osman, K., Ernst, T., Deleonibus, S., Wang, Y., Zhang, W., Lloyd, N.S., Evans, A.G.R.   +11 more
core  

Impact of Commercial Polyolefin Architecture and Composition on Its Ability to Compatibilize High‐Density Polyethylene/Isotactic Polypropylene Blends

Journal of Polymer Science, EarlyView.
This research elucidates the relationship between the molecular structure of commercially available ethylene–propylene copolymers and an ethylene/1‐olefin copolymer and its ability to compatibilize high‐density polyethylene/isotactic polypropylene blends. These findings indicate that the compatibilization of these blends with random copolymers benefits
Bailey Eberle, Susan K. Houston, Hannah Giffin, Mark Dadmun   +3 more
wiley   +1 more source

Advances in Gate Dielectrics for 2D Electronics

physica status solidi (RRL) – Rapid Research Letters, EarlyView.
This review discusses advanced gate dielectric integration for 2D electronic devices, including layered and nonlayered dielectric materials, while highlighting strategies such as seed‐assisted ALD, transfer methods, and in situ oxidation. By focusing on interface engineering and materials innovation, new routes for scalable, high‐performance 2D ...
Moon‐Chul Jung, Jiwoo Kim, Gwan‐Hyoung Lee   +2 more
wiley   +1 more source

Heterogeneous Local-Epitaxial Growth Behavior of Ultrathin HfO₂/Al-Doped TiO₂ Bilayer Dielectrics for Dynamic Random-Access Memory Capacitor Applications. [PDF]

ACS Appl Mater Interfaces
Kwon DS, Ye KH, Lee IS, Shin J, Lim J, Kim TK, Seo H, Paik H, Song H, Choi S, Choi JH, Hwang CS.   +11 more
europepmc   +1 more source

Thin Fluoride Insulators for Improved 2D Transistors: From Deposition Methods to Recent Applications

physica status solidi (RRL) – Rapid Research Letters, EarlyView.
2D materials hold significant promise for next‐generation electronic and optoelectronic devices, but suitable gate dielectrics are still a challenge. Fluoride insulators, offering inert, dangling‐bond‐free surfaces, have recently emerged as strong candidates. This review covers recent publications on high‐quality fluoride thin‐film deposition and their
Behzad Dadashnia, Saeed Rasouli, Walter M. Weber, Daniele Nazzari   +3 more
wiley   +1 more source

Improving 3C-SiC Quality Through Wafer-Bonded Switchback Epitaxy. [PDF]

Materials (Basel)
Colston G, Perera KH, Renz A, Gammon P, Antoniou M, Mawby PA, Shah VA.   +6 more
europepmc   +1 more source

Two‐step annealing process drives high thermoelectric performance of n‐type Bi2Te3 flexible films

Responsive Materials, EarlyView.
To address the relatively low carrier mobility in n‐type Bi2Te3 films prepared by magnetron sputtering, we developed a two‐step annealing process, including in situ and post‐annealing heat treatment. This method yields a high mobility (132.54 cm2 V−1 s−1) and S2σ (14.5 μW cm−1 K−2) by promoting pronounced grain growth and strengthening the preferred ...
Liang‐Cao Yin, Xinhua Lu, Wei‐Di Liu, Ji‐Wei Hou, De‐Zhuang Wang, Siqi Liu, Hao Wu, Meng Li, Xiao‐Lei Shi, Wei‐Nan Xie, Zhi‐Gang Chen, Qingfeng Liu   +11 more
wiley   +1 more source

Homo-epitaxy and twinning produce complex nanostructures in cryogenic calcite. [PDF]

J Appl Crystallogr
Németh P, Bruno M, Aquilano D, Molnár Z.   +3 more
europepmc   +1 more source