The Dimensional Revolution of Phosphorus: From Allotropicity to Battery System Applications
Phosphorus‐based materials are promising high‐capacity anodes classified by dimension (0D–3D) to systematically explore their properties and composite strategies. When combined with materials such as carbon to form heterostructures, the electrical conductivity and stability are effectively enhanced.
Shuhan Zhang +8 more
wiley +1 more source
Wafer-Scale Self-Limiting Epitaxy of Bernal-Stacked Single-Crystal Boron Nitride. [PDF]
Wang J +22 more
europepmc +1 more source
Recent Development in Solar‐to‐Hydrogen Conversion Systems
This review compares three solar‐driven hydrogen production methods, photocatalysis (PC), photoelectrochemical cells (PEC), and photovoltaic–electrochemical (PV–EC) systems by examining their mechanisms, materials, stability, and efficiency. Nanocrystal‐based PC catalysts achieved the highest quantum efficiency (94%), while PV–EC and Si nanowire PEC ...
Rabia Zafar Ali +3 more
wiley +1 more source
Non-Hermitian dynamics in quantum anomalous Hall insulators. [PDF]
Yi L +6 more
europepmc +1 more source
Development and modeling of a solid‐state microdosimeter for proton therapy applications
Precision Radiation Oncology, EarlyView.
Dante Guido Mercado +7 more
wiley +1 more source
Long‐Wavelength Infrared InAs/GaSb T2SLs on Silicon: A Review
This review summarises growth techniques for GaSb/GaAs/Si wafers, compares different growth techniques for GaSb buffer on GaAs wafers, LWIR InAs/GaSb T2SLs on InAs, GaSb, and GaAs wafers and proposes the buffer design for the growth of LWIR InAs/GaSb T2SLs on Si wafers, shown in the schematic.
Chen Liu +3 more
wiley +1 more source
Wafer Scale III-Nitride Deep-Ultraviolet Vertical-Cavity Surface-Emitting Lasers Featuring Nanometer-Class Control of Cavity Length. [PDF]
Ji C +18 more
europepmc +1 more source
Controllable Ge Hut Wires With Mobilities Exceeding 20 000 cm2 V−1 s−1
The controlled growth of germanium hut wires on patterned SiGe/Si(001) substrates is reported. These self‐assembled nanowires achieve a record hole mobility of 22 900 cm2 V−1 s−1 at 4.2 K. Remarkably, conductance quantization is observed at a channel length of 1.9 µm, highlighting their exceptionally low disorder and paving the way for scalable, high ...
Ming Ming +7 more
wiley +1 more source
Solution epitaxy of single-crystal ferroelectric p-i-n structure with ultrahigh photovoltaic response. [PDF]
Huang Z +25 more
europepmc +1 more source

