Results 161 to 170 of about 11,104 (255)

The Dimensional Revolution of Phosphorus: From Allotropicity to Battery System Applications

open access: yesENERGY &ENVIRONMENTAL MATERIALS, Volume 9, Issue 5, September 2026.
Phosphorus‐based materials are promising high‐capacity anodes classified by dimension (0D–3D) to systematically explore their properties and composite strategies. When combined with materials such as carbon to form heterostructures, the electrical conductivity and stability are effectively enhanced.
Shuhan Zhang   +8 more
wiley   +1 more source

Wafer-Scale Self-Limiting Epitaxy of Bernal-Stacked Single-Crystal Boron Nitride. [PDF]

open access: yesSmall
Wang J   +22 more
europepmc   +1 more source

Recent Development in Solar‐to‐Hydrogen Conversion Systems

open access: yesWIREs Energy and Environment, Volume 15, Issue 3, September 2026.
This review compares three solar‐driven hydrogen production methods, photocatalysis (PC), photoelectrochemical cells (PEC), and photovoltaic–electrochemical (PV–EC) systems by examining their mechanisms, materials, stability, and efficiency. Nanocrystal‐based PC catalysts achieved the highest quantum efficiency (94%), while PV–EC and Si nanowire PEC ...
Rabia Zafar Ali   +3 more
wiley   +1 more source

Non-Hermitian dynamics in quantum anomalous Hall insulators. [PDF]

open access: yesSci Adv
Yi L   +6 more
europepmc   +1 more source

Development and modeling of a solid‐state microdosimeter for proton therapy applications

open access: yes
Precision Radiation Oncology, EarlyView.
Dante Guido Mercado   +7 more
wiley   +1 more source

Long‐Wavelength Infrared InAs/GaSb T2SLs on Silicon: A Review

open access: yesAdvanced Photonics Research, Volume 7, Issue 8, August 2026.
This review summarises growth techniques for GaSb/GaAs/Si wafers, compares different growth techniques for GaSb buffer on GaAs wafers, LWIR InAs/GaSb T2SLs on InAs, GaSb, and GaAs wafers and proposes the buffer design for the growth of LWIR InAs/GaSb T2SLs on Si wafers, shown in the schematic.
Chen Liu   +3 more
wiley   +1 more source

Wafer Scale III-Nitride Deep-Ultraviolet Vertical-Cavity Surface-Emitting Lasers Featuring Nanometer-Class Control of Cavity Length. [PDF]

open access: yesAdv Sci (Weinh)
Ji C   +18 more
europepmc   +1 more source

Controllable Ge Hut Wires With Mobilities Exceeding 20 000 cm2 V−1 s−1

open access: yesAdvanced Electronic Materials, Volume 12, Issue 15, 10 August 2026.
The controlled growth of germanium hut wires on patterned SiGe/Si(001) substrates is reported. These self‐assembled nanowires achieve a record hole mobility of 22 900 cm2 V−1 s−1 at 4.2 K. Remarkably, conductance quantization is observed at a channel length of 1.9 µm, highlighting their exceptionally low disorder and paving the way for scalable, high ...
Ming Ming   +7 more
wiley   +1 more source

Solution epitaxy of single-crystal ferroelectric p-i-n structure with ultrahigh photovoltaic response. [PDF]

open access: yesNat Commun
Huang Z   +25 more
europepmc   +1 more source

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