Results 161 to 170 of about 62,943 (302)

Pure Inverse Spin Hall Effect in Ferromagnetic Ni80Fe20/Y3Fe5O12 (YIG) Heterostructures via the Longitudinal Spin Seebeck Effect

Advanced Physics Research, EarlyView.
A pure inverse spin Hall effect (ISHE) is demonstrated in ferromagnetic Ni₈₀Fe2₀/YIG heterostructures via the longitudinal spin Seebeck effect. By employing symmetry‐controlled geometries and reference samples, anomalous Nernst contributions are quantitatively eliminated, revealing intrinsic spin–charge conversion in Ni₈₀Fe2₀.
Hyeon‐Jin Lee, Na‐Rim Park, Eun‐Seong Cho, Seong‐Joon Won, Kyu‐Ho Moon, Yun‐Ho Kim, Sang‐Kwon Lee   +6 more
wiley   +1 more source

Van der Waals template-encoded soft epitaxy of tellurium enabled by atomic layer deposition. [PDF]

Sci Adv
Kim C, Cho H, Shi C, Jang M, Zhu W, Im S, Choi M, Lee G, Yang S, Li X, Hur N, Kim M, Nandi S, Erdi M, Motamarri P, Lee SC, Bhattacharjee S, Tongay SA, Song S, Park TE, Han Y, Shong B, Suh J.   +22 more
europepmc   +1 more source

Luminescence properties of ZnSe films grown by hot wall epitaxy

, 1997
The photoluminescence (PL) properties of ZnSe films grown by hot wall epitaxy are reported. The PL spectra show clear neutral donor-bound exciton peak; donor acceptor pair (DAP) peak, conduction band to acceptor (CA) peak, and their phonon replicas until
Wong HM, Cheah KW, Xia JB
core  

Diffusion‐Governed Growth Mechanisms of Epitaxial GaAs Islands on CMOS‐Compatible Si(001) Nanotip Arrays

Advanced Physics Research, EarlyView.
The mechanism and kinetics of selective GaAs growth on Si nanotip wafers via nanoheteroepitaxy were investigated as a function of pitch (center‐to‐center nanotip spacing). The pitch dependence reveals distinct surface‐diffusion‐controlled regimes, demonstrating that lateral Ga adatom transport on the SiO2 mask governs material redistribution and ...
Adriana Rodrigues, Anagha Kamath, Navid Kafi, Oliver Skibitzki, Kristiane Elsner, Martin Schmidbauer, Fariba Hatami   +6 more
wiley   +1 more source

Cathodoluminescence Analysis of Defects and Grain Boundaries in Zn₃P₂ Thin Films Grown on Graphene by MOVPE and MBE. [PDF]

ACS Mater Au
Hagger T, Hassanzadeh M, Urbonavicius A, El Alouani A, Boureau V, Ganeeva G, Kawashima N, Lemerle R, Wodzislawski KA, Lehmann S, Dick KA, Botti S, Michon A, Fontcuberta I Morral A, Escobar Steinvall S.   +14 more
europepmc   +1 more source

On the electrical and structural properties of boron delta layers in silicon [PDF]

This thesis describes the first successful growth of boron δ layers using silicon MBE. SIMS has been used to demonstrate that the layer widths are ∽2nm as has been confirmed by TEM.
Mattey, Nevil L.
core  

Two‐Dimensional van der Waals Antiferromagnets: Fabrication, Probes, Control, and Applications

Advanced Physics Research, EarlyView.
Two‐dimensional van der Waals antiferromagnets are emerging as versatile platforms for spintronic, optoelectronic, and quantum devices. This review summarizes recent progress in their fabrication, magnetic characterization, fields, interfacial engineering, chemical modification, and representative applications.
Huangyu Wu, Zeyu Han, Yueyao Wang, Yitao Yu, Mingyang Yin, Yikang Jin, Yongjun Huo, Lihong Gao, Zhuang Ma, Gang Zhang, Miao Jiang   +10 more
wiley   +1 more source

Nucleation-Accelerated Epitaxy at Large-Area (100) β‑Ga₂O₃ Terraces. [PDF]

ACS Omega
Im S, Choe B, Kim H, Ji G, Kang M, Kang H, Jeen H, Kuznetsov A, Park S, Ok JM.   +9 more
europepmc   +1 more source

Strain‐Tunable Photoluminescence From Ge Quantum Dots on Si Nanotips for CMOS‐Compatible Photonics

Advanced Physics Research, EarlyView.
This work studies strain in Ge quantum dots grown on Si nanotips using photoluminescence, X‐ray diffraction, and band structure calculations. It shows how emission changes with dot size, evaluates strain in the dot and substrate, and explains the role of direct and indirect transitions in the optical behavior.
Diana Ryzhak, Johannes Aberl, Enrique Prado‐Navarrete, Lada Vukušić, Oliver Skibitzki, Petr Klenovský, Marvin Hartwig Zoellner, Markus Andreas Schubert, Moritz Brehm, Davide Spirito, Giovanni Capellini   +10 more
wiley   +1 more source

Heterogeneous Local-Epitaxial Growth Behavior of Ultrathin HfO₂/Al-Doped TiO₂ Bilayer Dielectrics for Dynamic Random-Access Memory Capacitor Applications. [PDF]

ACS Appl Mater Interfaces
Kwon DS, Ye KH, Lee IS, Shin J, Lim J, Kim TK, Seo H, Paik H, Song H, Choi S, Choi JH, Hwang CS.   +11 more
europepmc   +1 more source