Dual-Functional Metal Interlayer Enables High-Quality GaN Epitaxy and Low-Damage Transfer Towards Flexible Optoelectronics. [PDF]
Small MethodsMa Y +5 more
europepmc +1 more source
Angewandte Chemie, EarlyView.Ein automatisiertes, rotationsunterstütztes und schichtweise Wachstumsverfahren ermöglicht die schnelle Herstellung hoch orientierter Zn2BDC2DABCO‐Metall‐organischer Gerüstverbindungen (MOF) als Dünnschichten unter Umgebungsbedingungen. Die korrelative Charakterisierung bestätigt eine ausgezeichnete Reproduzierbarkeit, eine homogene Filmbildung und ...
Eleonora Afanasenko +13 more
wiley +1 more source
Low Temperature Growth of High-Quality Wurtzite Ferroelectric Through Quasi-van der Waals Epitaxy. [PDF]
Adv MaterYang Y +17 more
europepmc +1 more source
Single Layer Growth of Strained Epitaxy at Low Temperature
, 2003 Contacting mode atomic force microscopy (AFM) is used to measure the In0.asGao.65As/GaAs epilayer grown at low temperature (460°C). Unlike the normal layer-by-layer growth (FvdM mode) or self-organized islands growth (SK mode) ,samples grown under 460 C ...
Duan Ruifei +3 more
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Automated Spin‐Assisted Layer‐by‐Layer Epitaxy Produces Highly Oriented Mixed‐Linker MOF Thin Films
Angewandte Chemie International Edition, EarlyView.An automated spin‐assisted layer‐by‐layer growth method enables rapid fabrication of highly oriented Zn2BDC2DABCO metal‐organic framework thin films under ambient conditions. Correlative characterization confirms excellent reproducibility, uniform film formation, and exceptional out‐of‐plane orientation exceeding 85%.
Eleonora Afanasenko +13 more
wiley +1 more source
Low thermal conductance platforms for mK tunnelling coolers [PDF]
The impact of the O2 content in SF6-O2 gas mixtures on the etch rate and sidewall profile of Silicon (Si), Germanium (Ge) and phosphorous doped Germanium (Ge:P) in reactive ion etching has been studied.
Wongwanitwattana, Chalermwat
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Self‐Assembled Telecom Color Centers in Silicon and Their Growth Environment
Advanced Physics Research, EarlyView.Influence of the growth pressure during the formation of self‐assembled color centers in silicon grown by molecular beam epitaxy at ultra‐low temperatures on the color center's photoluminescence spectral signature. The growth pressure crucially determines color center selectivity, as evidenced by G‐centers, W‐centers, and T‐centers, matrix purity, and ...
Jacqueline Marböck +9 more
wiley +1 more source
Interpretable self-driving sputtering epitaxy reveals human-usable growth rules for β-Ga<sub>2</sub>O<sub>3</sub> films. [PDF]
Nat CommunWakabayashi YK +5 more
europepmc +1 more source
Surface acoustic waves in semi-insulating Fe-doped GaN films grown by hydride vapor phase epitaxy
, 2014 The propagation properties of surface acoustic waves (SAWs) in semi-insulating Fe-doped GaN films grown on sapphire substrates by hydride vapor phase epitaxy are investigated.
Liu ZH(刘争晖) +7 more
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