Results 151 to 160 of about 142,351 (345)

Vapor phase epitaxy of GaN usingGaCl3N2 andNH3N2

, 1996
Heon Lee, James S. Harris
openalex   +1 more source

Delta-doped β-Ga₂O₃ thin films and β-(Al_0.26Ga_0.74)₂O₃/β-Ga₂O₃ heterostructures grown by metalorganic vapor-phase epitaxy [PDF]

, 2020
Praneeth Ranga, Arkka Bhattacharyya, Ashwin Rishinaramangalam, Yu Kee Ooi, Michael A. Scarpulla, Daniel Feezell, Sriram Krishnamoorthy   +6 more
openalex   +1 more source

The Need for Fundamental Photovoltaics Research to Ensure Energy Security

Progress in Photovoltaics: Research and Applications, EarlyView.
The center of this graphic focuses on the core of this paper—that fundamental research is central to the continued development of the photovoltaic (PV) industry. To the left, we have depictions of what is being studied—PV materials, PV cell structures, and PV module structures.
Rebecca Saive, Gavin Conibeer, Lisanne M. Einhaus, Jean‐François Guillemoles, Koami Soulemane Hayibo, Karin Hinzer, Jacob J. Krich, Martha Lenio, Michael P. Nielsen, Frederick U. Nitta, Ian R. Sellers, Daniel Suchet, Eric Tervo, Tom Tiedje, Jelle Westerhof   +14 more
wiley   +1 more source

Elastic constants of GaN grown by the oxide vapor phase epitaxy method [PDF]

, 2023
Hiroki Fukuda, Akira Nagakubo, Shigeyoshi Usami, Masayuki Imanishi, Yusuke Mori, Hirotsugu Ogi   +5 more
openalex   +1 more source

Homo-epitaxy and twinning produce complex nanostructures in cryogenic calcite. [PDF]

J Appl Crystallogr
Németh P, Bruno M, Aquilano D, Molnár Z.   +3 more
europepmc   +1 more source

Gain coupled DFB lasers with active layer grownon a corrugated substrate by molecular beam epitaxy

, 1997
J. Robadey, D. Martin, M. Glick, P.C. Silva, P.-H. Jouneau, U. Marti, F. K. Reinhart   +6 more
openalex   +2 more sources

Advances in Gate Dielectrics for 2D Electronics

physica status solidi (RRL) – Rapid Research Letters, EarlyView.
This review discusses advanced gate dielectric integration for 2D electronic devices, including layered and nonlayered dielectric materials, while highlighting strategies such as seed‐assisted ALD, transfer methods, and in situ oxidation. By focusing on interface engineering and materials innovation, new routes for scalable, high‐performance 2D ...
Moon‐Chul Jung, Jiwoo Kim, Gwan‐Hyoung Lee   +2 more
wiley   +1 more source

Substrate-field-modulated remote-van der Waals hybrid epitaxy in transition metal dichalcogenide heterostructures. [PDF]

Nano Converg
Handriani LS, Jang S, Kim Y, Yun H, Jeong DY, Park H, Gao Z, Jang JI, Park WI.   +8 more
europepmc   +1 more source

Thin Fluoride Insulators for Improved 2D Transistors: From Deposition Methods to Recent Applications

physica status solidi (RRL) – Rapid Research Letters, EarlyView.
2D materials hold significant promise for next‐generation electronic and optoelectronic devices, but suitable gate dielectrics are still a challenge. Fluoride insulators, offering inert, dangling‐bond‐free surfaces, have recently emerged as strong candidates. This review covers recent publications on high‐quality fluoride thin‐film deposition and their
Behzad Dadashnia, Saeed Rasouli, Walter M. Weber, Daniele Nazzari   +3 more
wiley   +1 more source

High Electron Mobility in Ge Films Grown on Si (001) by an 8-Inch Molecular Beam Epitaxy System. [PDF]

Nanomaterials (Basel)
Ye G, Zhang J, Chen Y, Ming M, Liao L, Geng X, Zhang X, Zhang J.   +7 more
europepmc   +1 more source