Results 171 to 180 of about 142,351 (345)
Study on N-polar gallium nitride growth by tri-halide vapor phase epitaxy
直 竹川
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Abstract Measuring the bismuth (Bi) content of ternary gallium arsenide bismuthide (GaAsBi) alloys is important because it sensitively influences their bandgap, and Bi is known to segregate vertically to the surface and sometimes also laterally during growth, so elemental distribution maps need to be quantified.
T. Walther
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Emergent Freestanding Complex Oxide Membranes for Multifunctional Applications. [PDF]
Li B +6 more
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AlGaN/GaN high electron mobility transistor heterostructures grown by ammonia and combined plasma-assisted ammonia molecular beam epitaxy [PDF]
Ahmed Y. Alyamani +9 more
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Emergence of Continents Stabilized the Bioavailability of Boron
ABSTRACT Boron is an essential element for the development of life on Earth; borates stabilize ribose in prebiotic reactions and facilitate metabolism in higher plants. There is, however, a relatively narrow surface boron concentration range over which borates stabilize and serve as a micronutrient rather than a toxin.
Brendan V. Dyck, Jon Wade
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Structural and Plasmonic Evolution in Mixed-Dimensionality Bismuth/Graphene Heterostructures. [PDF]
Gupta T +8 more
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Indium Gallium Arsenic Phosphide-Based Optoelectronics Grown By Gas Source Molecular Beam Epitaxy
G.-J. Shiau
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Nonclassical crystal growth via particle attachment and fusion yields metal–organic framework crystals with multidomain morphologies while retaining single crystallinity. Amorphous particles attach at crystal edges, crystallize, and align with the lattice, driving anisotropic growth, curved surfaces, and cavities.
Hadar Nasi +12 more
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Step Dynamics during Molecular Beam Epitaxy on Si(100) and GaAs(100) Surfaces.
T. Kawamura, Akira Ishii
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