Large area silicon epitaxy using pulsed DC magnetron sputtering deposition
P. Plantin +6 more
openalex +2 more sources
Fabrication and characterization of germanium-on-insulator through epitaxy, bonding, and layer transfer [PDF]
Kwang Hong Lee +5 more
openalex +1 more source
Harnessing Interfacial Field Localization in Hexagonal GaP Mie Resonators
Сharacterization of Mie modes in self‐assembled GaP nanowires grown by MBE in vertical and horizontal configurations. The hexagonal cross‐section suppresses higher‐order modes while preserving dominant low‐order modes with spectral shifts. Simulations and dark‐field spectroscopy confirm the diameter‐dependent tunability.
Aleksandra A. Kutuzova +8 more
wiley +1 more source
Rapid homoepitaxial growth of (011) β-Ga<sub>2</sub>O<sub>3</sub> by HCl-based halide vapor phase epitaxy. [PDF]
Oshima Y, Oshima T.
europepmc +1 more source
ABSTRACT Breaking time‐reversal symmetry to achieve broadband and wide‐angle nonreciprocity is critical in electromagnetic waves manipulation. While Epsilon‐Near‐Zero materials have revolutionized the control of Transverse Magnetic modes, realizing comparable broadband nonreciprocity for Transverse Electric (TE) modes remains a formidable challenge ...
Junyang Sui, Hai‐Feng Zhang
wiley +1 more source
High-throughput chiral copper foils by curved-surface confinement recrystallization. [PDF]
Huang D +10 more
europepmc +1 more source
Magnetic and Electric Transport Properties of MnTe Thin Film Grown by Molecular Beam Epitaxy [PDF]
Woochul Kim +6 more
openalex +1 more source
Facet‐Dependent Selectivity of Rutile IrO2 for Oxygen and Chlorine Evolution Reactions
Low‐index crystallographic facets of rutile IrO2 exhibit distinct activity for electrocatalytic oxygen and chlorine evolution reactions, highlighting facet engineering as a strategy for tuning electrooxidation selectivity. Rutile iridium dioxide (IrO2) is a benchmark catalyst for heterogeneous electrooxidation reactions including the oxygen and ...
Molly E. Vitale‐Sullivan +6 more
wiley +1 more source
High Power Density X-Band GaN-on-Si HEMTs with 10.2 W/mm Used by Low Parasitic Gold-Free Ohmic Contact. [PDF]
Du J +12 more
europepmc +1 more source

