Results 191 to 200 of about 11,104 (255)

Two-dimensional buffer breaks substrate limit in III-nitrides epitaxy. [PDF]

Sci Adv
Sang Y, Xu X, Wu Y, Feng G, Zhang X, Zhuo F, Jin Z, Guo H, Tao T, Ding S, Wang X, Chen D, Ohkawa K, Xing K, Wang X, Zhuang Z, Zhang R, Alshareef HN, Liu B.   +18 more
europepmc   +1 more source

MOCVD Growth of κ‑Ga₂O₃ on Al-Rich Al _<i>x</i> Ga_1-<i>x</i> N Templates: Phase Diagram and Microstructural Evolution. [PDF]

Cryst Growth Des
Ngo KD, Muazzam UU, Nandi A, Anandan SK, Yin Y, Cherns D, Kappers MJ, Oliver RA, Smith MD, Kuball M.   +9 more
europepmc   +1 more source

Defect Reduction in HEMT Epilayers on SiC Meta-Substrates. [PDF]

Nanomaterials (Basel)
Su VC, Wei TY, Chen MH, Ku CT, Liu GS.
europepmc   +1 more source

The {010} form of polar brushite (CaHPO₄·2H₂O) deposits as an epi-growing crystal on a non-polar {010} substrate of gypsum (CaSO₄·2H₂O). [PDF]

J Appl Crystallogr
Aquilano D, Ghignone S, Bruno M.
europepmc   +1 more source

Homoepitaxial growth of isotopically enriched h¹⁰BN layers on h¹¹BN crystals by high-temperature molecular beam epitaxy. [PDF]

NPJ 2D Mater Appl
Bradford J, Collins AFM, Cheng TS, Shen J, Kerfoot J, Rance GA, Li J, Mellor CJ, Beton PH, Cassabois G, Dai S, Edgar JH, Novikov SV.   +12 more
europepmc   +1 more source

Comprehensive investigation of emission homogeneity of InGaAs multiple quantum wells using spatially resolved spectroscopy. [PDF]

Sci Rep
Zelioli A, Špokas A, Čechavičius B, Talaikis M, Stanionytė S, Bukauskas V, Vaitkevičius A, Čerškus A, Wojnar P, Deibuk V, Dudutienė E, Butkutė R.   +11 more
europepmc   +1 more source

Area-Selective Low-Pressure Thermal Atomic Layer Deposition of Gallium Nitride. [PDF]

ACS Omega
van der Wel BY, van der Zouw K, Aarnink AAI, Kovalgin AY.   +3 more
europepmc   +1 more source

GaN metal-organic vapor phase epitaxy on Sc₂O₃/Si templates for group III-nitride monolithic integration to Si technology. [PDF]

Sci Rep
Grinys T, Kadys A, Malinauskas T, Lapukas P, Podlipskas Ž, Gudaitis R, Meškinis Š.   +6 more
europepmc   +1 more source

Field-tunable charge confinement in III-V layered nanowire-array superlattices. [PDF]

Sci Rep
Méndez-Camacho R, Cruz-Hernández E, López-López M.   +2 more
europepmc   +1 more source

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Epitaxial graphene on ruthenium

Nature Materials, 2008
Graphene has been used to explore the fascinating electronic properties of ideal two-dimensional carbon, and shows great promise for quantum device architectures. The primary method for isolating graphene, micromechanical cleavage of graphite, is difficult to scale up for applications.
Peter W, Sutter, Jan-Ingo, Flege, Eli A, Sutter   +2 more
openaire   +2 more sources