Results 201 to 210 of about 142,351 (345)

Molecular beam epitaxy growth of Mn4−Ni N thin films on MgO(0 0 1) substrates and their magnetic properties

, 2018
Taro Komori, Akihito Anzai, Toshiki Gushi, Kaoru Toko, Takashi Suemasu   +4 more
openalex   +2 more sources

Electro‐Chemo‐Mechanical Coupling in Hf0.5Zr0.5O2 Ferroionic Heterostructures

Advanced Functional Materials, Volume 36, Issue 37, 7 May 2026.
Schematic of a ferroionic HZO heterostructure where epitaxial interfaces enable dynamic oxygen‐vacancy exchange, coupling ionic and ferroelectric degrees of freedom. Vacancy‐mediated polarization modulation biases HZO polymorphism, suppresses leakage, and enhances piezoelectric response, yielding distinct butterfly‐loop evolution and diode‐like ...
Achilles Bergne, Denis Alikin, Milica Vasiljevic, Victor B. Tinti, Javier Zamudio‐García, Leonardo Soares de Oliveira, Megan Landberg, Dimitrios Koukoulis, Huaiyu Chen, Jesper Wallentin, David Marrero‐López, Astri Bjørnetun Haugen, Sizhao Huang, Dennis Christensen, Nini Pryds, Alexander Tselev, Andrei Kholkin, Vincenzo Esposito   +17 more
wiley   +1 more source

Mitigation of Structural Defects during the Growth of 2D van der Waals Chalcogenides by Molecular Beam Epitaxy. [PDF]

Small Methods
Zhang Q, Hilse M, Law S.
europepmc   +1 more source

A correlation between surface morphology and RHEED intensity variation for growth of GaAs by molecular beam epitaxy

, 1991
M. V. B. Moreira, M. A. Py, E. Tuncel
openalex   +2 more sources

Ubiquitous Antiparallel Domains in 2D Hexagonal Boron Nitride Uncovered by Interferometric Nonlinear Optical Imaging

Advanced Materials, Volume 38, Issue 25, 4 May 2026.
Interferometric second‐harmonic generation (SHG) imaging reveals the ubiquitous formation of antiparallel domains in CVD‐grown 2D hexagonal boron nitride. By resolving lattice orientation and SHG phase, hidden domain structures and disorder become visible over large areas. The SHG intensity quantitatively tracks crystalline quality across growth routes,
Yeri Lee, Juseung Oh, Kyung Yeol Ma, Seung Jin Lee, Eui Young Jung, Yani Wang, Kenji Watanabe, Takashi Taniguchi, Hailin Peng, Hiroki Ago, Ki Kang Kim, Hyeon Suk Shin, Sunmin Ryu   +12 more
wiley   +1 more source

AlScN Pseudosubstrates for High Indium Content InGaN Alloy Epitaxy. [PDF]

ACS Appl Mater Interfaces
Schörmann J, Zscherp MF, Jentsch SA, Becker M, Stein M, Meierhofer F, Margenfeld C, Winkler F, Beyer A, Volz K, Waag A, Chatterjee S.   +11 more
europepmc   +1 more source

Epitaxy of TiO sub 2 thin film on sapphire by MOCVD

, 2022
H Chang
openalex   +1 more source

Segregation and trapping of erbium during silicon molecular beam epitaxy [PDF]

, 1995
R. Serna, M. Lohmeier, P. M. Zagwijn, Elias Vlieg, Albert Polman   +4 more
openalex   +1 more source

Investigation of Structural, Mechanical and Electrochemical Properties of Temperature‐Dependent Dual AlN/TiAlN Coating Synthesized by CVD Process

Advanced Materials Interfaces, Volume 13, Issue 9, 5 May 2026.
This study investigates thermally CVD‐deposited AlN/TiAlN dual‐layer coatings over a Si substrate, focusing on the temperature‐dependent process‐structure relationship. Systematic characterization reveals that a dense AlN interlayer combined with an optimally deposited TiAlN top layer provides enhancement in mechanical strength, tribological stability,
Soham Das, Abhishek Kundu, Debjyoti Sahu, Nikhil Kumar, Spandan Guha   +4 more
wiley   +1 more source

Nanopatterning optimization of zinc phosphide: hole mobility up to 560 cm²/V s with selective area epitaxy.

J Mater Chem C Mater
Lemerle R, Freitas HR, Hagger T, Dede D, Webb LE, Aigroz C, Piazza V, Spadaro MC, Arbiol J, Morral AFI.   +9 more
europepmc   +1 more source