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Vapor Phase Epitaxy

2020
The vapor phase epitaxy has been developed to prepare the main semiconductor compounds of the nitrides. Vapor phase epitaxy uses a gaseous phase composed of elements of the materials to be obtained. At a fixed temperature the vapor phase precursors decompose and react at the substrate surface, giving the desired layer. Vapor phase epitaxy was initially
Giovanni Attolini   +2 more
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Advanced epitaxial growth techniques: atomic layer epitaxy and migration-enhanced epitaxy

Journal of Crystal Growth, 1999
New epitaxial growth techniques based on modulated source supplies such as atomic layer epitaxy (ALE) and migration-enhanced epitaxy (MEE) have been developed to grow atomically controlled surfaces and interfaces of compound semiconductors. ALE is based on repeated adsorption saturation of constituent atoms on the substrate surface which guarantees ...
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Atomic layer epitaxy

Thin Solid Films, 1984
This review discusses the development and present status of atomic layer epitaxy (ALE), a technology for growing layers of crystalline and polycrystalline materials one atomic layer at a time. Atomic layer epitaxy was originally developed to meet the needs of improved ZnS thin films and dielectric thin films for electroluminescent thin film display ...
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Epitaxy of 2D Materials toward Single Crystals

Advanced Science, 2022
Zhihong Zhang   +2 more
exaly  

Epitaxy

2021
Kumar Shubham, Ankaj Gupta
openaire   +1 more source

Epitaxy

2022
Roberto Campedelli, Igor Varisco
openaire   +1 more source

EPITAXIAL STRUCTURE

2021
LIU JIA-ZHE, LIN TZU-YAO, SHIH YING-RU
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Two-dimensional material templates for van der Waals epitaxy, remote epitaxy, and intercalation growth

Applied Physics Reviews, 2022
Stephen Pearton   +2 more
exaly  

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