Results 221 to 230 of about 142,351 (345)
A methodological framework is presented for combinatorial REBCO thin films fabricated by drop‐on‐demand inkjet printing with controlled Rare Earth composition gradients. Automated, synchrotron‐based, and local characterization techniques produce comprehensive property maps that correlate composition and TLAG process parameters with superconducting ...
Emma Ghiara +15 more
wiley +1 more source
Contact Transfer Epitaxy of Halide Perovskites. [PDF]
Sun H +8 more
europepmc +1 more source
Optoelectronically Active GaAs/GeSn‐MQW/Ge Heterojunctions Created via Semiconductor Grafting
Semiconductor Grafting enables a lattice‐mismatched GaAs/GeSn‐MQW/Ge heterojunction with engineered band offsets and optical field distribution. The enlarged conduction and valence band discontinuities govern asymmetric carrier transport, producing bias‐dependent dual‐mode photodetection from visible to near‐infrared wavelengths.
Jie Zhou +22 more
wiley +1 more source
Two-dimensional buffer breaks substrate limit in III-nitrides epitaxy. [PDF]
Sang Y +18 more
europepmc +1 more source
Investigation of HgTe-CdTe superlattices grown by molecular beam epitaxy
S. D. Hatch
openalex +1 more source
This work paves the way for practical photoelectrochemical water splitting devices by addressing key upscaling challenges related to substrate conductivity, absorber inhomogeneity, and mass transfer limitations. Integrated improvements in substrate engineering, material processing, device architecture, and operational conditions allow the development ...
Telmo da Silva Lopes +7 more
wiley +1 more source
Defect Reduction in HEMT Epilayers on SiC Meta-Substrates. [PDF]
Su VC, Wei TY, Chen MH, Ku CT, Liu GS.
europepmc +1 more source
Novel adiabatic tapered coupler for small III-V lasers grown on SOI wafer [PDF]
Kunert, Bernardette +4 more
core +1 more source
The Origin of Efficiency in III‐Nitride Micro‐Light‐Emitting Diodes
The images show panchromatic cathodoluminescence of III‐V materials, which reveal that AlGaInP red wafers, having fewer defects, support longer carrier diffusion lengths. Meanwhile, the density of defects increases with longer emission wavelengths in the InGaN system, illustrating how generated carriers pass through the material and how defects limit ...
Jeong‐Hwan Park +11 more
wiley +1 more source

