Growth of GaAs Epitaxial Microcrystals by Droplet Epitaxy.
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Homoepitaxial growth of isotopically enriched h<sup>10</sup>BN layers on h<sup>11</sup>BN crystals by high-temperature molecular beam epitaxy. [PDF]
Bradford J +12 more
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The {010} form of polar brushite (CaHPO<sub>4</sub>·2H<sub>2</sub>O) deposits as an epi-growing crystal on a non-polar {010} substrate of gypsum (CaSO<sub>4</sub>·2H<sub>2</sub>O). [PDF]
Aquilano D, Ghignone S, Bruno M.
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Area-Selective Low-Pressure Thermal Atomic Layer Deposition of Gallium Nitride. [PDF]
van der Wel BY +3 more
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Field-tunable charge confinement in III-V layered nanowire-array superlattices. [PDF]
Méndez-Camacho R +2 more
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GaN metal-organic vapor phase epitaxy on Sc<sub>2</sub>O<sub>3</sub>/Si templates for group III-nitride monolithic integration to Si technology. [PDF]
Grinys T +6 more
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Interfacial Charge Transfer in Lead Sulfide/Cadmium Sulfide Quantum Dot-Monolayer Molybdenum Disulfide Heterostructures. [PDF]
Li M, Fron E, Cotlet M.
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Highly Oriented Epitaxial Hexagonal Boron Nitride Multilayers on High-Temperature-Resistant Single-Crystal Aluminum Nitride (0001). [PDF]
Yang X +10 more
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Growth of rhombohedral-stacked single-crystal WS<sub>2</sub>/MoS<sub>2</sub> vertical heterostructures. [PDF]
Chen J +18 more
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