Results 231 to 240 of about 53,093 (291)
Investigation of the Crystallization Region for High-Quality GaN Growth in Na-Flux Method. [PDF]
ACS OmegaYao J +9 more
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Monolithic electro-optic platform on silicon with bandwidth of 100 GHz and beyond. [PDF]
Nat CommunSteckler D +12 more
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, 2004 Epitaxy provides readers with a comprehensive treatment of the modern models and modifications of epitaxy, together with the relevant experimental and technological framework. This advanced textbook describes all important aspects of the epitaxial growth
Marian A. Herman +2 more
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MRS Proceedings, 1981
The formation and structures of epitaxial CoSi2, NiSi2, Pd2 Si and PtSi films on silicon are reviewed. Polycrystalline films of reasonable epitaxial quality can be grown with sharp interfaces on Si(111) by conventional deposition and heating techniques. The interfaces on (100) substrates, however, are faceted.
R.T. Tung +4 more
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The formation and structures of epitaxial CoSi2, NiSi2, Pd2 Si and PtSi films on silicon are reviewed. Polycrystalline films of reasonable epitaxial quality can be grown with sharp interfaces on Si(111) by conventional deposition and heating techniques. The interfaces on (100) substrates, however, are faceted.
R.T. Tung +4 more
openaire +1 more source
Epitaxial strain and epitaxial bending
Surface Science, 1996The relation between the curvatures of an epitaxial film-substrate system and the epitaxial strain in the film is generalized to an arbitrary substrate surface of an arbitrary crystal structure. The determination of elastic constants of epitaxial film material from curvature measurements is compared with the determination from bulk perpendicular strain
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AT&T Technical Journal, 1980
Molecular beam epitaxy is an ultrahigh vacuum technique for growing very thin epitaxial layers of semiconductor crystals. Because it is inherently a slow growth process, extreme dimensional control over both major compositional variations and impurity incorporation can be achieved.
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Molecular beam epitaxy is an ultrahigh vacuum technique for growing very thin epitaxial layers of semiconductor crystals. Because it is inherently a slow growth process, extreme dimensional control over both major compositional variations and impurity incorporation can be achieved.
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Remote Epitaxy: Fundamentals, Challenges, and Opportunities [PDF]
Nano LettersAdvanced heterogeneous integration technologies are pivotal for next-generation electronics. Single-crystalline materials are one of the key building blocks for heterogeneous integration, although it is challenging to produce and integrate these ...
Bo-In Park, Jekyung Kim, Kuangye Lu
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Epitaxy of MgO magnetic tunnel barriers on epitaxial graphene
Nanotechnology, 2013Epitaxial growth of electrodes and tunnel barriers on graphene is one of the main technological bottlenecks for graphene spintronics. In this paper, we demonstrate that MgO(111) epitaxial tunnel barriers, one of the prime candidates for spintronic application, can be grown by molecular beam epitaxy on epitaxial graphene on SiC(0001).
Godel, Florian +8 more
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Epitaxial graphene on ruthenium
Nature Materials, 2008Graphene has been used to explore the fascinating electronic properties of ideal two-dimensional carbon, and shows great promise for quantum device architectures. The primary method for isolating graphene, micromechanical cleavage of graphite, is difficult to scale up for applications.
Peter W, Sutter +2 more
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