Results 231 to 240 of about 142,351 (345)
Homoepitaxial growth of isotopically enriched h<sup>10</sup>BN layers on h<sup>11</sup>BN crystals by high-temperature molecular beam epitaxy. [PDF]
Bradford J +12 more
europepmc +1 more source
We show that interfacial oxygen at the MgO/Fe interface can be transformed from an uncontrolled variable into a tunable design parameter for spintronic junctions. Momentum microscopy provides direct access to the momentum‐ and spin‐resolved electronic structure beneath the insulating MgO layers, revealing how oxygen intercalation reshapes buried Fe ...
David Maximilian Janas +14 more
wiley +1 more source
Field-tunable charge confinement in III-V layered nanowire-array superlattices. [PDF]
Méndez-Camacho R +2 more
europepmc +1 more source
Heterointerface‑Enabled Electrocatalysis for Efficient Energy Conversion
Functionally distinct A/B materials can be integrated at the nanoscale to create customized heterointerfaces with tunable band alignment and charge redistribution, providing fast electron and ion transport channels as well as cooperative dual active sites.
Liuru Fang +3 more
wiley +1 more source
The {010} form of polar brushite (CaHPO<sub>4</sub>·2H<sub>2</sub>O) deposits as an epi-growing crystal on a non-polar {010} substrate of gypsum (CaSO<sub>4</sub>·2H<sub>2</sub>O). [PDF]
Aquilano D, Ghignone S, Bruno M.
europepmc +1 more source
III‐nitride semiconductors have revolutionized optoelectronics, enabling transformative technologies such as high‐efficiency LEDs and lasers. However, their use in intersubband optoelectronics has remained limited. This work marks an important step forward by demonstrating highly coherent inter‐well resonant tunneling injection in III‐nitride ...
Jimy Encomendero +6 more
wiley +1 more source
Comprehensive investigation of emission homogeneity of InGaAs multiple quantum wells using spatially resolved spectroscopy. [PDF]
Zelioli A +11 more
europepmc +1 more source
This study explores the epitaxial growth of high‐quality La‐doped BiFeO3 (BLFO) thin films at 550 °C using magnetron sputtering. The films exhibit good ferroelectric properties and low leakage current. A BLFO/CoFeB heterostructure is constructed, achieving an exchange bias field exceeding the coercive field at room temperature.
Zhiqin Zhou +10 more
wiley +1 more source
Area-Selective Low-Pressure Thermal Atomic Layer Deposition of Gallium Nitride. [PDF]
van der Wel BY +3 more
europepmc +1 more source
This study demonstrates a versatile hardware platform using nano‐oscillators based on binary oxides for deterministic and probabilistic computing. By tailoring material physics, NbOx enables energy‐efficient synchronization for pattern recognition, while enhanced stochasticity in engineered SiOx provides robust entropy for p‐bits to solve complex ...
Jihyun Kim +3 more
wiley +1 more source

