Homo-metal-element mediated surface modification of sapphire for robust epitaxy of wafer-scale single-crystalline 2D semiconductors. [PDF]
Wang J +19 more
europepmc +1 more source
Abstract Measuring the bismuth (Bi) content of ternary gallium arsenide bismuthide (GaAsBi) alloys is important because it sensitively influences their bandgap, and Bi is known to segregate vertically to the surface and sometimes also laterally during growth, so elemental distribution maps need to be quantified.
T. Walther
wiley +1 more source
Quantum confinement and hybrid integration in silicon light emitters toward scalable on-chip photonics. [PDF]
Pourmand M +8 more
europepmc +1 more source
Development and modeling of a solid‐state microdosimeter for proton therapy applications
Precision Radiation Oncology, EarlyView.
Dante Guido Mercado +7 more
wiley +1 more source
This article reviews the fundamental consequences of strong correlations on excitations and elementary steps of energy conversion leading to new opportunities to control energy conversion. Examples include friction at surfaces, thermal transport, and photovoltaic energy conversion.
Vasily Moshnyaga +14 more
wiley +1 more source
Superconductivity and suppressed monoclinic distortion in FeTe films enabled by higher-order epitaxy. [PDF]
Sato Y +13 more
europepmc +1 more source
Phase engineering of atomically thin magnetic chromium tellurides via molecular beam epitaxy. [PDF]
Miao G +17 more
europepmc +1 more source
Optimization and Simulation on Gas Flow and Temperature Fields on the Homoepitaxial Growth of N-Doped 4H-SiC Wafers. [PDF]
Zhang G, Li T, Liu Y, Sun J, Zhang S.
europepmc +1 more source
Controllable Growth of Ordered In-Plane Ge Hut Wires on Trench-Patterned Si Substrate. [PDF]
Gao F, Ming M, Zhang JY, Zhang JJ.
europepmc +1 more source
Emergent Freestanding Complex Oxide Membranes for Multifunctional Applications. [PDF]
Li B +6 more
europepmc +1 more source

