Results 241 to 250 of about 142,351 (345)

GaN metal-organic vapor phase epitaxy on Sc₂O₃/Si templates for group III-nitride monolithic integration to Si technology. [PDF]

Sci Rep
Grinys T, Kadys A, Malinauskas T, Lapukas P, Podlipskas Ž, Gudaitis R, Meškinis Š.   +6 more
europepmc   +1 more source

Ripples in Two‐Dimensional Transition Metal Sulfides: Formation Mechanism, Optoelectronic Regulation, and Application Prospects

Battery Energy, Volume 5, Issue 3, May 2026.
Ripples transform 2D materials by creating tunable strain fields. This enables precise manipulation of electronic and optical properties, driving innovations in next‐generation optoelectronics and quantum devices. ABSTRACT As integrated circuit technology approaches its physical limits in the post‐Moore era, transition metal sulfides, with atomic‐scale
Haitao Yu, Xiao Wu
wiley   +1 more source

Highly Oriented Epitaxial Hexagonal Boron Nitride Multilayers on High-Temperature-Resistant Single-Crystal Aluminum Nitride (0001). [PDF]

Adv Sci (Weinh)
Yang X, Pristovsek M, Nitta S, Honda Y, Ohtake A, Sakuma Y, Hiroto T, Ishida T, Ikezawa M, Guo Q, Amano H.   +10 more
europepmc   +1 more source

Unveiling Controlled Growth of Single‐Crystalline Layered Sb ₂ Te ₃ Via Van Der Waals Epitaxy for Visible‐Light Photodetectors and Optoelectronic Synapses [PDF]

Shunhang Yang, Mengyu Liu, Shengnan Yue, Panpan Liu, Huiting Lin, Tongtong Gao, Xing Huang   +6 more
openalex   +1 more source

Lead Halide Perovskite‐Based Nanoheterostructures: Design, Properties, and Applications

ChemistryEurope, Volume 4, Issue 5, May 2026.
A comprehensive overview of lead halide perovskite‐based nanoheterostructures (NHS) with metal chalcogenides, lead chalcohalides, oxides, perovskite derivatives, metal halides, and metals is presented. The review highlights the different synthesis strategies, crystallographic orientations, epitaxial interfaces, and optical properties of the NHS and ...
Kunnathodi Vighnesh, Andrey L. Rogach
wiley   +1 more source

Growth of rhombohedral-stacked single-crystal WS₂/MoS₂ vertical heterostructures. [PDF]

Nat Commun
Chen J, Guo Y, Zhang Y, Li Z, Guo Q, Yang Q, Li K, Zhang Y, Zhang B, Hu Y, Cai Y, Hu Z, Cheng Q, Liu X, Liu M, Chen J, Yuan Q, Liu K, Xu X.   +18 more
europepmc   +1 more source

Supercritical Ge Layers on Si(001) Grown By Ultra-Low-Temperature Molecular Beam Epitaxy

Wilflingseder, Christoph
openalex   +1 more source

Residual Al Adatoms Driven Epitaxy of AlGaN QWs for High‐Performance UV LEDs [PDF]

Tai Li, Zhaoying Chen, Tao Wang, Wei Luo, Renchun Tao, Z X Yuan, Tongxin Lu, Yucheng Guo, Ye Yuan, Shangfeng Liu, Junjie Kang, Ping Wang, Bowen Sheng, Fang Liu, Qi Wang, Shengqiang Zhou, Bo Shen, Xinqiang Wang   +17 more
openalex   +1 more source

Optimal susceptor rotation speed in hot‐wall horizontal SiC epitaxy using computational fluid dynamics

The Canadian Journal of Chemical Engineering, Volume 104, Issue 5, Page 2269-2282, May 2026.
Computational fluid dynamics (CFD) was used to study how internal geometry and susceptor rotation affect SiHCl₃ concentration uniformity in an industrial‐scale SiC vapour deposition reactor (CVD) reactor. A rotation speed of 200 rpm yielded the most uniform distributions.
Huong Mai Thi Kieu, Son Ich Ngo, Young‐Il Lim, Bum Ho Choi   +3 more
wiley   +1 more source

Characterization of Complex Stacking of Semiconductors Through Near Field Imaging and Spectroscopy. [PDF]

Adv Mater
Tailpied L, Gureghian C, Fossard F, Mérot JS, Rodriguez JB, Flores FG, Vincent G, Taliercio T, Fix B.   +8 more
europepmc   +1 more source