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Perovskite Heterostructures for Optoelectronic Applications. [PDF]
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MRS Proceedings, 1981
The formation and structures of epitaxial CoSi2, NiSi2, Pd2 Si and PtSi films on silicon are reviewed. Polycrystalline films of reasonable epitaxial quality can be grown with sharp interfaces on Si(111) by conventional deposition and heating techniques. The interfaces on (100) substrates, however, are faceted.
R.T. Tung +4 more
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The formation and structures of epitaxial CoSi2, NiSi2, Pd2 Si and PtSi films on silicon are reviewed. Polycrystalline films of reasonable epitaxial quality can be grown with sharp interfaces on Si(111) by conventional deposition and heating techniques. The interfaces on (100) substrates, however, are faceted.
R.T. Tung +4 more
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Epitaxial strain and epitaxial bending
Surface Science, 1996The relation between the curvatures of an epitaxial film-substrate system and the epitaxial strain in the film is generalized to an arbitrary substrate surface of an arbitrary crystal structure. The determination of elastic constants of epitaxial film material from curvature measurements is compared with the determination from bulk perpendicular strain
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AT&T Technical Journal, 1980
Molecular beam epitaxy is an ultrahigh vacuum technique for growing very thin epitaxial layers of semiconductor crystals. Because it is inherently a slow growth process, extreme dimensional control over both major compositional variations and impurity incorporation can be achieved.
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Molecular beam epitaxy is an ultrahigh vacuum technique for growing very thin epitaxial layers of semiconductor crystals. Because it is inherently a slow growth process, extreme dimensional control over both major compositional variations and impurity incorporation can be achieved.
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Remote Epitaxy: Fundamentals, Challenges, and Opportunities
Nano LettersAdvanced heterogeneous integration technologies are pivotal for next-generation electronics. Single-crystalline materials are one of the key building blocks for heterogeneous integration, although it is challenging to produce and integrate these ...
Jun Min Suh, Xinyuan Zhang
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Epitaxy of MgO magnetic tunnel barriers on epitaxial graphene
Nanotechnology, 2013Epitaxial growth of electrodes and tunnel barriers on graphene is one of the main technological bottlenecks for graphene spintronics. In this paper, we demonstrate that MgO(111) epitaxial tunnel barriers, one of the prime candidates for spintronic application, can be grown by molecular beam epitaxy on epitaxial graphene on SiC(0001).
Godel, Florian +8 more
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Epitaxial graphene on ruthenium
Nature Materials, 2008Graphene has been used to explore the fascinating electronic properties of ideal two-dimensional carbon, and shows great promise for quantum device architectures. The primary method for isolating graphene, micromechanical cleavage of graphite, is difficult to scale up for applications.
Peter W, Sutter +2 more
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Advanced epitaxial growth techniques: atomic layer epitaxy and migration-enhanced epitaxy
Journal of Crystal Growth, 1999New epitaxial growth techniques based on modulated source supplies such as atomic layer epitaxy (ALE) and migration-enhanced epitaxy (MEE) have been developed to grow atomically controlled surfaces and interfaces of compound semiconductors. ALE is based on repeated adsorption saturation of constituent atoms on the substrate surface which guarantees ...
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Journal of Crystal Growth, 1975
This paper is intended to give an overview of the applications of epitaxial growth to photovoltaic solar cells. In order to introduce those operating parameters which can be improved by epitaxy, we begin by describing how a solar cell functions. Then we discuss the contribution of epitaxial growth to higher cell performance through improved crystalline
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This paper is intended to give an overview of the applications of epitaxial growth to photovoltaic solar cells. In order to introduce those operating parameters which can be improved by epitaxy, we begin by describing how a solar cell functions. Then we discuss the contribution of epitaxial growth to higher cell performance through improved crystalline
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