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2020
The vapor phase epitaxy has been developed to prepare the main semiconductor compounds of the nitrides. Vapor phase epitaxy uses a gaseous phase composed of elements of the materials to be obtained. At a fixed temperature the vapor phase precursors decompose and react at the substrate surface, giving the desired layer. Vapor phase epitaxy was initially
Giovanni Attolini +2 more
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The vapor phase epitaxy has been developed to prepare the main semiconductor compounds of the nitrides. Vapor phase epitaxy uses a gaseous phase composed of elements of the materials to be obtained. At a fixed temperature the vapor phase precursors decompose and react at the substrate surface, giving the desired layer. Vapor phase epitaxy was initially
Giovanni Attolini +2 more
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Kristall und Technik, 1973
AbstractCd is deposited on air cleaved and annealed muscovite. The Cd films were seeded by Ag. Then Cd grows epitaxially with its (0001)‐planes parallel to the (001)‐plane of muscovite.
P Dobbeet, H . - G Neumann
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AbstractCd is deposited on air cleaved and annealed muscovite. The Cd films were seeded by Ag. Then Cd grows epitaxially with its (0001)‐planes parallel to the (001)‐plane of muscovite.
P Dobbeet, H . - G Neumann
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Local epitaxy and lateral epitaxial overgrowth of SiC
Journal of Crystal Growth, 2001Abstract Selective epitaxial growth and lateral overgrowth of SiC using a graphite mask is reported in this paper. Selective area SiC growth is accomplished using physical vapor transport (PVT) epitaxy. The growth was carried out on 4 H and 6H-SiC wafers on- and 8° off-oriented from the basal plane in the 〈1 1 2 0〉 direction.
Y Khlebnikov +3 more
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Physical Review Letters, 2000
Dislocation networks observed in CoSi (2) islands grown epitaxially on Si are compared with the results of dislocation-dynamics calculations. The calculations make use of the fact that image forces play a relatively minor role compared to line tension forces and dislocation-dislocation interactions.
X H, Liu, F M, Ross, K W, Schwarz
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Dislocation networks observed in CoSi (2) islands grown epitaxially on Si are compared with the results of dislocation-dynamics calculations. The calculations make use of the fact that image forces play a relatively minor role compared to line tension forces and dislocation-dislocation interactions.
X H, Liu, F M, Ross, K W, Schwarz
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Advanced epitaxial growth techniques: atomic layer epitaxy and migration-enhanced epitaxy
Journal of Crystal Growth, 1999New epitaxial growth techniques based on modulated source supplies such as atomic layer epitaxy (ALE) and migration-enhanced epitaxy (MEE) have been developed to grow atomically controlled surfaces and interfaces of compound semiconductors. ALE is based on repeated adsorption saturation of constituent atoms on the substrate surface which guarantees ...
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Thin Solid Films, 1984
This review discusses the development and present status of atomic layer epitaxy (ALE), a technology for growing layers of crystalline and polycrystalline materials one atomic layer at a time. Atomic layer epitaxy was originally developed to meet the needs of improved ZnS thin films and dielectric thin films for electroluminescent thin film display ...
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This review discusses the development and present status of atomic layer epitaxy (ALE), a technology for growing layers of crystalline and polycrystalline materials one atomic layer at a time. Atomic layer epitaxy was originally developed to meet the needs of improved ZnS thin films and dielectric thin films for electroluminescent thin film display ...
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Journal of Crystal Growth, 1975
This paper is intended to give an overview of the applications of epitaxial growth to photovoltaic solar cells. In order to introduce those operating parameters which can be improved by epitaxy, we begin by describing how a solar cell functions. Then we discuss the contribution of epitaxial growth to higher cell performance through improved crystalline
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This paper is intended to give an overview of the applications of epitaxial growth to photovoltaic solar cells. In order to introduce those operating parameters which can be improved by epitaxy, we begin by describing how a solar cell functions. Then we discuss the contribution of epitaxial growth to higher cell performance through improved crystalline
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IEEE Circuits and Devices Magazine, 1988
Chemical beam epitaxy (CBE), an offshoot of molecular-beam epitaxy (MBE) and metalorganic chemical vapor deposition (MO-CVD), is described. It combines the beam nature of MBE and the control and use of all-vapor source as in MO-CVD. The growth kinetics of all three processes are examined, and their advantages and disadvantages are considered.
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Chemical beam epitaxy (CBE), an offshoot of molecular-beam epitaxy (MBE) and metalorganic chemical vapor deposition (MO-CVD), is described. It combines the beam nature of MBE and the control and use of all-vapor source as in MO-CVD. The growth kinetics of all three processes are examined, and their advantages and disadvantages are considered.
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Selective epitaxial growth by molecular beam epitaxy
Semiconductor Science and Technology, 1993Selective epitaxial growth by molecular beam epitaxy (MBE) is realized at rather high substrate temperatures: 700 degrees for GaAs and 550 degrees C for InAs with a growth rate of 0.7 mu m h-1. Selectivity depends significantly on growth rate, As pressure and substrate temperature. Growth kinetic studies are carried out.
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