Results 261 to 270 of about 142,351 (345)
Terbium-doped gadolinium garnet thin films grown by liquid phase epitaxy for scintillation detectors. [PDF]
Baillard A +5 more
europepmc +1 more source
Monolithic Integration of ScAlN Modulators on Silicon‐On‐Insulator Platform
Monolithic integration of scandium‐doped aluminum nitride (ScAlN) modulators on a silicon‐on‐insulator platform is reported. A multilayer electrode design enhances RF‐optical field overlap, enabling direct access to the diagonal electro‐optic coefficient and improved modulation efficiency.
Sihao Wang +6 more
wiley +1 more source
Integrated PbTe Quantum Dots for Two-Color Detection in II-VI Wide-Bandgap Diodes. [PDF]
Głuch JM, Szot M, Karczewski G.
europepmc +1 more source
ABSTRACT The rapid expansion of data‐intensive applications has highlighted the fundamental limitations of traditional CMOS‐based von Neumann architectures, particularly in terms of power efficiency, latency, and flexibility. Spin logic devices utilizing spin–orbit torque (SOT) present a promising pathway for nonvolatile, low‐power, and in‐memory ...
Ke‐Yi Wu +5 more
wiley +1 more source
Cross‐sectional electron microscopy reveals that antimonene hexagons exhibited inner defects and protective organic functionalization against oxidation. Temperature and power‐dependent Raman spectroscopy on varying thicknesses of FLA hexagons show that thinner flakes (<20 nm) exhibited a blueshift and intensity decrease, contrasting with the redshift ...
Marta Alcaraz +6 more
wiley +1 more source
Chemical termination and interfacial redox behavior of freestanding SrTiO<sub>3</sub>. [PDF]
Wohlgemuth MA +11 more
europepmc +1 more source
Nanoscale Ripples at the Surface of SrTiO3 Irradiated by a Broad Low‐Energy Ar+ (7 keV) Ion Beam
Broad Ar ion beam irradiation creates self‐organized ripple nanostructures on oxide surfaces. A schematic illustrates the process, while cross‐sectional STEM imaging captures the ripple morphology. Complementary elemental mapping by EELS highlights nanoscale chemical variations, linking ion‐beam nanostructuring with structural and compositional ...
Mohammad S. Jamal +9 more
wiley +1 more source
Controlling Mixed Mo/MoS<sub>2</sub> Domains on Si by Molecular Beam Epitaxy for the Hydrogen Evolution Reaction. [PDF]
Jeon E +4 more
europepmc +1 more source
High‐temperature reconstruction of c‐plane sapphire during MOCVD growth of MoS2 fundamentally alters the optical and electronic properties of MoS2 epilayer by introducing step‐edge driven interfacial charge transfer. Raman, PL, and KPFM reveal non‐uniform doping and strain in as‐grown films, whereas transferred layers show uniform optical and ...
Riccardo Torsi +8 more
wiley +1 more source

