Results 281 to 290 of about 142,351 (345)

Confinement Epitaxy of Large-Area Two-Dimensional Sn at the Graphene/SiC Interface [PDF]

Zamin Mamiyev, Niclas Tilgner, Narmina O. Balayeva, Dietrich R T Zahn, Thomas Seyller, Christoph Tegenkamp   +5 more
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From breaking rules to making rules in materials science. [PDF]

Sci Adv
Jalan B.
europepmc   +1 more source

WSe₂ Monolayers Grown by Molecular Beam Epitaxy on hBN. [PDF]

Nano Lett
Kucharek J, Raczyński M, Bożek R, Kaleta A, Kurowska B, Bilska M, Kret S, Taniguchi T, Watanabe K, Kossacki P, Goryca M, Pacuski W.   +11 more
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Geo-spatial prospective life cycle sustainability of InGaN and InGaP compound semiconductors. [PDF]

Sci Rep
Shamoushaki M, Travers-Nabialek J, Gillgrass SJ, Smowton PM, Koh SCL.   +4 more
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Growth of InGaN nanodots on GaAs(111)A substrate by droplet epitaxy monitored by electronic spectroscopies (XPS, REELS)

Romain Jouanneaud
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Epitaxial Silicides

MRS Proceedings, 1981
The formation and structures of epitaxial CoSi2, NiSi2, Pd2 Si and PtSi films on silicon are reviewed. Polycrystalline films of reasonable epitaxial quality can be grown with sharp interfaces on Si(111) by conventional deposition and heating techniques. The interfaces on (100) substrates, however, are faceted.
R.T. Tung, J.M. Poate, J.C. Bean, J.M. Gibson, D.C. Jacobson   +4 more
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Epitaxial strain and epitaxial bending

Surface Science, 1996
The relation between the curvatures of an epitaxial film-substrate system and the epitaxial strain in the film is generalized to an arbitrary substrate surface of an arbitrary crystal structure. The determination of elastic constants of epitaxial film material from curvature measurements is compared with the determination from bulk perpendicular strain
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Molecular-Beam Epitaxy

AT&T Technical Journal, 1980
Molecular beam epitaxy is an ultrahigh vacuum technique for growing very thin epitaxial layers of semiconductor crystals. Because it is inherently a slow growth process, extreme dimensional control over both major compositional variations and impurity incorporation can be achieved.
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Epitaxy of MgO magnetic tunnel barriers on epitaxial graphene

Nanotechnology, 2013
Epitaxial growth of electrodes and tunnel barriers on graphene is one of the main technological bottlenecks for graphene spintronics. In this paper, we demonstrate that MgO(111) epitaxial tunnel barriers, one of the prime candidates for spintronic application, can be grown by molecular beam epitaxy on epitaxial graphene on SiC(0001).
Godel, F., Pichonat, E., Vignaud, D., Majjad, H., Metten, D., Henry, Y., Berciaud, S., Dayen, J.F., Halley, D.   +8 more
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