Results 211 to 220 of about 62,943 (302)

Spin‐Polarized Magnetic Metal Electrodes for Magnetic Tunnel Junctions

MetalMat, EarlyView.
This perspective surveys spin‐polarized magnetic metal electrodes for magnetic tunnel junctions, systematically covering conventional ferromagnets, collinear/noncollinear antiferromagnets, and emergent altermagnets. It compares tunneling polarization origins across these classes and emphasizes that effective electrode polarization is a momentum ...
Zhiyuan Duan, Peixin Qin, Li Liu, Guojian Zhao, Sixu Jiang, Xiaoyang Tan, Jingyu Li, Xiaoning Wang, Ziang Meng, Zhiqi Liu   +9 more
wiley   +1 more source

A Vertically Bandgap-Cascaded Perovskite Single-Crystal Film Heterojunction for On-Chip Spectral Imaging. [PDF]

Adv Mater
Liu S, Zhao X, Wang T, Zhou J, Li Y, Li J, Xu J, Li Q, Lei W, Xu X.   +9 more
europepmc   +1 more source

Photovoltaic Effect in a III‐IV‐V Compound Semiconductor

Progress in Photovoltaics: Research and Applications, EarlyView.
A large reduction of the GaAs band gap is obtained with incorporation of 6.5% Ge during epitaxy without introducing extended defects or composition inhomogeneity. Heterojunction solar cell devices were fabricated with 0.76‐V open circuit voltage and an internal quantum efficiency above 40% at energies below the bandgap of the GaAs emitter.
José M. Ripalda, Pablo Caño, Micaela Rodriguez‐Peña, Miguel Angel Sevillano‐Bendezú, Aurelia Trevisan, Raghavendra Juluri, Aitana Cano, Iván García, Alicia Gonzalo, Enrique Navarro, Jeronimo Buencuerpo, Paul Koenraad, Ana María Sanchez, Yolanda Gonzalez   +13 more
wiley   +1 more source

K⁺-free mica-assisted epitaxy of Bi-based chalcogenide and oxychalcogenide single-crystals. [PDF]

Nat Commun
Zhao T, Liu X, Ge X, Duan S, Bai Y, Yu Y, Fu H, Xu H, Gao L, Xu J, Piotr M, Zhang L, Wang Z, Hu W.   +13 more
europepmc   +1 more source

Fast-Recovery Epitaxial NbN Superconducting Nanowire Single-Photon Detectors with Saturated Efficiency at 1550 nm in Liquid Helium. [PDF]

Nano Lett
Incalza F, Castellani M, Joti Paul D, Simon A, Batson E, Mondin D, Medeiros O, Berggren KK.   +7 more
europepmc   +1 more source

Low Temperature Site‐Specific Pulsed Laser Annealing of MoS2

Small, EarlyView.
The application of laser pulses, of extremely short duration, is investigated as a potential new method to modify the atomic structure of ultrathin 2D materials for use in the creation of future electrical devices. The process is efficient, offering a site‐specific functionality, where regions of an electronic device that only requires annealing is ...
Nazar Farid, Aashi Gupta, Pavlina Metaxa, A Arifutzzaman, Hariprasad Kuduvan, Rahil Haria, Michele Conroy, Ian Campbell, Ageeth A Bol, James Connolly, Jun Lin, Ian Povey, Ray Duffy, Gerard M O'Connor   +13 more
wiley   +1 more source

Interfacial Coupling Controls Molecular Epitaxy of HMTP on Graphene/SiC. [PDF]

ACS Appl Mater Interfaces
Varshney D, Procházka P, Stará V, Shestopalov M, Kunc J, Novák J, Čechal J.   +6 more
europepmc   +1 more source

Vibrational Exfoliation of 2D Materials

Small, EarlyView.
Vibrational energy folds, fractures and exfoliates atomically and molecularly thin materials. Combining experimentation and computational methods, this unique vibrational synthesis pathway is revealed. This process overcomes barriers of existing approaches by processing 1000 g/L dispersions without loss in yield.
Aadam Rabani, Faysal A. Khaleel, Fahad S. Al‐Gburi, Irwing Ramirez, Tomislav Friščić, Jason Stafford   +5 more
wiley   +1 more source

Epitaxy of ultrathin Fe₃O₄ films on SrTiO₃(001): influence of growth parameters on the formation of coexisting (111)- and (001)-oriented phases. [PDF]

J Appl Crystallogr
Alexander A, Ruwisch K, Thien J, Weissbach A, Pollenske T, Zhang B, Schulte F, Gutowski O, Vlad A, Coati A, Wollschläger J.   +10 more
europepmc   +1 more source

Interface Engineering for Expanded Stable Polarization Regime Upon Cycling in Ferroelectric Hf0.5Zr0.5O2

Small, EarlyView.
Interfaces can be crucial on the properties of ferroelectric HfO2. In this work, it is demonstrated that a top nanolayer of ZrO2 significantly improves the ferroelectric properties of epitaxial La‐doped HfO2 films on SrTiO3(001). Endurance reaches 1011 cycles with a technological window of 108 cycles, in which the remanent polarization variation is ...
M. Ghiasabadi Farahani, C. Chirila, R. Solanas, L. Pintilie, I. Fina, F. Sánchez   +5 more
wiley   +1 more source