Results 211 to 220 of about 53,093 (291)

Editorial: Advancing transition metal nitride semiconductors: overcoming integration challenges and exploring applications”

Frontiers in Materials
Dmytro Solonenko, Stefano Leone
doaj   +1 more source

Transfer Printing of Epitaxial Organic Semiconductor Films. [PDF]

ACS Appl Mater Interfaces
Minotto A, Raimondo L, Lameri I, Perego J, Comotti A, Monguzzi A, Meinardi F, Sassella A.   +7 more
europepmc   +1 more source

A Low‐Power Cryogenic Low‐Noise Amplifier for the Next‐Generation Quantum Computers

physica status solidi (a), Volume 223, Issue 11, 10 June 2026.
Next generation of quantum computers calls for reduced dc power dissipation of the cryogenic low‐noise amplifier (LNA) applied in reading out the superconducting qubits. This article reports on processing and evaluation of a 100‐nm gate length indium phosphide high electron mobility transistor (InP HEMT) technology used in the design of such LNAs.
Nelson Rebelo, Johan Bergsten, Arsalan Pourkabirian, Niklas Wadefalk, Jan Grahn   +4 more
wiley   +1 more source

Wafer Scale III-Nitride Deep-Ultraviolet Vertical-Cavity Surface-Emitting Lasers Featuring Nanometer-Class Control of Cavity Length. [PDF]

Adv Sci (Weinh)
Ji C, Wang J, Xu F, Zhang L, Lang J, Zhang Z, Tan F, Ji C, Zhang J, Zhang E, Kang X, Qin Z, Ju G, Wu J, Yang X, Tang N, Wang X, Ge W, Shen B.   +18 more
europepmc   +1 more source

Solution epitaxy of single-crystal ferroelectric p-i-n structure with ultrahigh photovoltaic response. [PDF]

Nat Commun
Huang Z, Zhang Z, Geng WR, Ma W, Li Y, Zhou Z, Fu Y, Zhang R, Sun Y, Fang X, Jiang X, Xiong Q, Lv X, Du G, Li S, Fang Y, Yang YM, Huang Y, Ma XL, Wu Y, Liu K, Hong Z, Deng T, Tian H, Han G, Ren Z.   +25 more
europepmc   +1 more source

Self-aligned and self-limiting van der Waals epitaxy of monolayer MoS₂ for scalable 2D electronics. [PDF]

Nat Commun
Sakuma Y, Atsumi K, Hiroto T, Nara J, Ohtake A, Ono Y, Matsumoto T, Muta Y, Takeda K, Kano E, Yasuno T, Yang X, Ikarashi N, Suzuki A, Ikezawa M, Li S, Nishimura T, Kanahashi K, Nagashio K.   +18 more
europepmc   +1 more source

MOCVD Growth of κ‑Ga₂O₃ on Al-Rich Al _<i>x</i> Ga_1-<i>x</i> N Templates: Phase Diagram and Microstructural Evolution. [PDF]

Cryst Growth Des
Ngo KD, Muazzam UU, Nandi A, Anandan SK, Yin Y, Cherns D, Kappers MJ, Oliver RA, Smith MD, Kuball M.   +9 more
europepmc   +1 more source

Two-dimensional buffer breaks substrate limit in III-nitrides epitaxy. [PDF]

Sci Adv
Sang Y, Xu X, Wu Y, Feng G, Zhang X, Zhuo F, Jin Z, Guo H, Tao T, Ding S, Wang X, Chen D, Ohkawa K, Xing K, Wang X, Zhuang Z, Zhang R, Alshareef HN, Liu B.   +18 more
europepmc   +1 more source

Defect Reduction in HEMT Epilayers on SiC Meta-Substrates. [PDF]

Nanomaterials (Basel)
Su VC, Wei TY, Chen MH, Ku CT, Liu GS.
europepmc   +1 more source

Comprehensive investigation of emission homogeneity of InGaAs multiple quantum wells using spatially resolved spectroscopy. [PDF]

Sci Rep
Zelioli A, Špokas A, Čechavičius B, Talaikis M, Stanionytė S, Bukauskas V, Vaitkevičius A, Čerškus A, Wojnar P, Deibuk V, Dudutienė E, Butkutė R.   +11 more
europepmc   +1 more source