Results 131 to 140 of about 53,075 (307)
Emergent Spin Hall Quantization and High‐Order van Hove singularities in Square‐Octagonal MA2Z4
Advanced Physics Research, EarlyView.Square‐octagonal MA2Z4 (M = Mo/W, A = Si/Ge, Z = pnictogen) monolayers are predicted to realize quantum spin Hall insulators with nearly quantized spin Hall conductivity enabled by an emergent spin U(1) quasi‐symmetry. Materials with Z = As and Sb host quasi‐flat bands with high‐order van Hove singularities near the Fermi level, making them promising ...
Rahul Verma +3 more
wiley +1 more source
JPhys MaterialsHerein, we describe a comparative study of the ferroelectric properties of epitaxial Hf _0.5 Zr _0.5 O _2 films grown on La _0.67 Sr _0.33 MnO _3 /SrTiO _3 (100) and La _0.67 Sr _0.33 MnO _3 /DyScO _3 (110) across a temperature range of 32–298 K for the ...
J W Adkins +4 more
doaj +1 more source
Current-induced migration of surface adatoms during GaN growth by molecular beam epitaxy
, 2001 The influence of electric fields on surface migration of Gallium (Ga) and Nitrogen (N) adatoms is studied during GaN growth by molecular beam epitaxy (MBE).
Tong SY +6 more
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An Advanced Epitaxial Strategy Enabling Vertical GaN Devices on Silicon Wafers
Advanced Physics Research, EarlyView.A universal epitaxial strategy overcomes the long‐standing limitation of insulating buffers in GaN‐on‐Silicon technology. By exploiting a unique amorphous‐like interlayer (AL‐IL) formed via ultrathin metal pre‐deposition, high‐quality GaN films with excellent vertical conductivity are realized on silicon wafers.
Fumio Kawamura +2 more
wiley +1 more source
On the electrical and structural properties of boron delta layers in silicon [PDF]
This thesis describes the first successful growth of boron δ layers using silicon MBE. SIMS has been used to demonstrate that the layer widths are ∽2nm as has been confirmed by TEM.
Mattey, Nevil L.
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Carbon Energy, EarlyView.High‐entropy perovskite oxides enable tunable structures and properties through multi‐cation disorder and entropy stabilization. This review summarizes advances in synthesis, structural and defect engineering, and their applications in OER/ORR, CO2RR, and electrochemical energy storage, highlighting in situ characterization and modeling that clarify ...
Obeylaw Moyo +8 more
wiley +1 more source
The Dimensional Revolution of Phosphorus: From Allotropicity to Battery System Applications
ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.Phosphorus‐based materials are promising high‐capacity anodes classified by dimension (0D–3D) to systematically explore their properties and composite strategies. When combined with materials such as carbon to form heterostructures, the electrical conductivity and stability are effectively enhanced.
Shuhan Zhang +8 more
wiley +1 more source
Ordered InAs nanodots formed on the patterned GaAs substrate by molecular beam epitaxy
, 2011 Ordered indium arsenide (InAs) nanodots are formed by molecular beam epitaxy (MBE) on patterned gallium arsenide (GaAs) substrates, which are prepared by implanting manganese (Mn) ions through anodic aluminum oxide (AAO) membranes into the GaAs wafers ...
Wang, ZG +5 more
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Epitaxy of Semiconductors: Introduction to Physical Principles
, 2013 Introduction to Epitaxy provides the essential information for a comprehensive upper-level graduate course treating the crystalline growth of semiconductor heterostructures.
Pohl, Udo W
core +1 more source
ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.This article reviews the fundamental consequences of strong correlations on excitations and elementary steps of energy conversion leading to new opportunities to control energy conversion. Examples include friction at surfaces, thermal transport, and photovoltaic energy conversion.
Vasily Moshnyaga +14 more
wiley +1 more source