Results 111 to 120 of about 62,943 (302)

Development of a Nb‐Based Semiconductor‐Superconductor Hybrid 2DEG Platform

Advanced Electronic Materials
Semiconductor‐superconductor hybrid materials are used as a platform to realize Andreev bound states, which hold great promise for quantum applications.
Sjoerd Telkamp, Tommaso Antonelli, Clemens Todt, Manuel Hinderling, Marco Coraiola, Daniel Haxell, Sofieke C. ten Kate, Deividas Sabonis, Peng Zeng, Rüdiger Schott, Erik Cheah, Christian Reichl, Fabrizio Nichele, Filip Krizek, Werner Wegscheider   +14 more
doaj   +1 more source

Advances in Se Wide‐Bandgap Photovoltaics and TexSe1‐x SWIR Photodiodes

Advanced Science, EarlyView.
In this review, fundamental properties and current challenges in Se photovoltaics (PVs) for tandem and indoor PVs and TexSe1‐x alloys for short wave infrared photodiodes are discussed. A case is made for the practicality of elemental chalcogenide optoelectronics, and a pathway toward resolving the key challenges in these respective technologies is ...
Adam D. Alfieri, Deep Jariwala
wiley   +1 more source

A Reconfigurable Memristive Spiking Neuron Enabling Advanced Neuromorphic Computing

Advanced Science, EarlyView.
Pek Jun Tiw and co‐workers develop a reconfigurable memristive neuron that can exhibit four spiking behaviors with freely tunable spike train parameters. The neuron supports multiplexed spike encoding of multiple pieces of information. It also supports advanced neural network strategies, such as neural heterogeneity and dynamic mode switching ...
Pek Jun Tiw, Yuqi Li, Zhongyuan Li, Qihang Ding, Yuzhe Wang, Jiarong Wang, Yuchao Yang   +6 more
wiley   +1 more source

Strain Programming of Oxygen Octahedral Symmetry in Perovskite Oxide Thin Films

Advanced Materials Interfaces
The collective rotations of oxygen octahedra play an important role in determining the physical properties of functional perovskite oxides. The epitaxial strain can serve as an effective means to modify the oxygen octahedral symmetry (OOS), i.e., oxygen ...
Yunkyu Park, Seoung‐Hun Kang, Jeongkeun Song, Sang Woon Hwang, Shan Lin, Jong Mok Ok, Fazhi Yang, Hwangsun Kim, Andrew R. Lupini, Mina Yoon, Sangmoon Yoon, Hua Zhou, Ho Nyung Lee   +12 more
doaj   +1 more source

Nickel Intercalation in Epitaxial Graphene on SiC(0001): A Novel Platform for Engineering Two‐Dimensional Heterostructures

Advanced Science, EarlyView.
Ni‐intercalated graphene on SiC is achieved through a scalable colloidal nanoparticle deposition route. 2D heterostructures show preserved graphene band structure, stable under ambient conditions, and robust interfacial magnetism. Intercalated 2D Ni represents a promising candidate for next‐generation spintronic devices and is a scalable pathway to ...
Ylea Vlamidis, Stiven Forti, Antonio Rossi, Arrigo Calzolari, Carmela Marinelli, Camilla Coletti, Stefan Heun, Stefano Veronesi   +7 more
wiley   +1 more source

Characterization of the Nucleation Layer in GaN/Sapphire Heterostructures

, 2005
The objective of this work was to investigate the formation of the GaN nucleation layer during low temperature and high temperature growth and to study domain matching epitaxy in GaN and AlGaN nucleation layers deposited on sapphire by MOCVD.
Pant, Punam
core  

Ultrahigh Interfacial Thermal Conductance across GaN/BAs Interfaces via Atomic‐Level Engineering

Advanced Science, EarlyView.
The integration of gallium nitride (GaN) with ultrahigh‐thermal‐conductivity boron arsenide (BAs) substrates represents a promising pathway for developing next‐generation high‐power devices. The heat dissipation capability of such integrated systems is fundamentally governed by thermal transport across GaN/BAs interfaces, and buffer layers such as ...
Linfeng Yu, Hongkai Zhang, Haofeng Qin, Yi Zhang, Jinyuan Xu, Yiming Zhao, Dongliang Ding, Jianbin Xu, Sunmi Shin, Zhuhua Zhang, Guangzhao Qin   +10 more
wiley   +1 more source

Influence of epitaxial stress on temperature-dependent ferroelectric endurance of Hf0.5Zr0.5O2 from cryogenic to ambient conditions

JPhys Materials
Herein, we describe a comparative study of the ferroelectric properties of epitaxial Hf _0.5 Zr _0.5 O _2 films grown on La _0.67 Sr _0.33 MnO _3 /SrTiO _3 (100) and La _0.67 Sr _0.33 MnO _3 /DyScO _3 (110) across a temperature range of 32–298 K for the ...
J W Adkins, S Kumari, T Gage, I Fina, F Sánchez   +4 more
doaj   +1 more source

Fast growth rate epitaxy by chloride precursors

, 2012
In this chapter the epitaxial process with chloride precursors has been described and the main parameters (Si/H2, C/Si, Cl/Si, growth rate) that influence the growth and the quality of the epitaxial layer have been discussed in detail.
Francesco La Via
core  

High Upper Critical Field and Type II Superconductivity in Epitaxial Cubic W2N Thin Films

Advanced Science, EarlyView.
Superconducting thin films of stoichiometric W2N demonstrate a high upper critical field (Hc2) of ∼ 8.5 T, uncommon among binary transition metal nitrides. This robust superconducting response under high magnetic fields highlights the technological relevance of W2N for superconducting applications, e.g., integrated quantum and cryogenic electronics ...
Aditya Singh, Arnaud le Febvrier, Sanath Kumar Honnali, Abhisek Mishra, Grzegorz Greczynski, Subhankar Bedanta, Per Eklund, Ajay Soni   +7 more
wiley   +1 more source