Results 111 to 120 of about 53,075 (307)
Topological Materials and Related Applications
Advanced Electronic Materials, EarlyView.This review covers topological materials—including topological insulators, quantum valley Hall and quantum spin Hall insulators, and topological Weyl and Dirac semimetals—as well as their most recent advancements in fields such as spintronics, electronics, photonics, thermoelectrics, and catalysis.
Carlo Grazianetti +9 more
wiley +1 more source
Vacuum Chemical Epitaxy: High Throughput GaAs Epitaxy Without Arsine
, 1989 Metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) are well established methods for growing epitaxial GaAs and AlGaAs films.
V. S. Sundaram +4 more
core +1 more source
Advanced Electronic Materials, EarlyView.Using C‐AFM, W/HZO/p‐Ge capacitors with areas down to 0.26 µm2 are investigated. Frequency‐dependent voltage ramps reveal switching currents that confirm complete polarization reversal across the entire electrode area, while PUND enables reconstruction of P–V loops.
Lucian Trupina +10 more
wiley +1 more source
Advanced ScienceThe coherence of hole spin qubits in germanium planar heterostructures is limited by the hyperfine coupling to the nuclear spin bath due to 29Si and 73Ge isotopes.
Patrick Daoust +11 more
doaj +1 more source
Characterization of the Nucleation Layer in GaN/Sapphire Heterostructures
, 2005 The objective of this work was to investigate the formation of the GaN nucleation layer during low temperature and high temperature growth and to study domain matching epitaxy in GaN and AlGaN nucleation layers deposited on sapphire by MOCVD.
Pant, Punam
core
Extrinsic and Intrinsic Charge Transfer at Interfaces of Membrane‐Based Oxide Heterostructures
Advanced Electronic Materials, EarlyView.Freestanding oxides have emerged as a new opportunity to tailor oxides outside of the typical epitaxial constraints. We present the fabrication of TiO2‐terminated SrTiO3 membranes via direct growth control. We demonstrate competing ionic and electronic charge transfer in LaAlO3/SrTiO3 bilayers using near ambient pressure XPS.
Kapil Nayak +8 more
wiley +1 more source
Advanced Energy Materials, EarlyView.A flexible InGaP/GaAs/InGaAs triple‐junction platform encapsulated with ultrathin glass enables unassisted electrocatalysis and space applications by providing robust protection against chemically aggressive and radiation‐rich environments. This work establishes a unified III–V multijunction photovoltaic platform that bridges space photovoltaics and ...
Sukkyu Hong +10 more
wiley +1 more source
Formation of MOS-transistors with isolation of active elements by oxiden porous silicon [PDF]
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2009 The superthin functional layers of MOS-transistors require qualitative isolation of active elements. The new method of formation of epitaksial structures for technology «silicon - on-isolator» is offered on the basis of porous silicon.
Novosyadlyi S. P., Vivcharuk V. M.
doaj
ZnO and ZnCdO metal organic vapor phase epitaxy: epitaxy, defects and band gap engineering
, 2011 Zinc oxide (ZnO) and its ternary alloys have high potential to compete with III-V nitrides for optoelectronic applications. Furthermore, oxide semiconductors receive considerable attention due to their low cost of fabrication, chemical robustness and ...
Venkatachalapathy, Vishnukanthan
core
Advanced Energy Materials, EarlyView.Flexible n‐type Bi2Te3 thin films require improved room‐temperature figure of merit (ZT) and mechanical stability. We show that synergistic Bi–Te antisite tuning and crystalline–amorphous hybridization optimizes carrier concentration, mobility, and phonon scattering.
Bo‐Cheng Wang +8 more
wiley +1 more source