Results 111 to 120 of about 142,351 (345)
Recent Advances and Challenges in Ammonia‐Hydrogen Energy Conversion
Advanced Science, EarlyView.This work summarizes the latest progress of various catalytic methods in ammonia‐hydrogen energy conversion. The challenges and outlook of ammonia‐hydrogen energy conversion system are also emphasized. This work expects to build a blueprint of renewable and efficient ammonia‐hydrogen energy conversion systems under mild conditions.
Menghao Lv +6 more
wiley +1 more source
Flexoelectricity in Photoconversion: Fundamentals, Materials, and Outlooks
Advanced Science, EarlyView.Mechanical bending of a flexible cantilever induces a strain gradient in the photoactive material. The resulting flexoelectric field couples with photovoltaic and photoconductive effects, modulating charge generation, separation, and collection. A comparative analysis of oxide perovskites, halide perovskites, and two‐dimensional materials is presented,
Xiang Huang, Feng Li, Rongkun Zheng
wiley +1 more source
Formation of MOS-transistors with isolation of active elements by oxiden porous silicon [PDF]
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2009 The superthin functional layers of MOS-transistors require qualitative isolation of active elements. The new method of formation of epitaksial structures for technology «silicon - on-isolator» is offered on the basis of porous silicon.
Novosyadlyi S. P., Vivcharuk V. M.
doaj
Advanced Science, EarlyView.Ferroelectric Rashba semiconductors promise ultralow‐power devices but lack industry‐quality films. This work demonstrates CMOS‐compatible fabrication of high‐quality α‐GeTe(111) films via magnetron sputtering, enabled by a 5 nm Sb2Te3 seed layer. Structural and ferroelectric analyses show robust, switchable polarization comparable to MBE films, paving
Jules Lagrave +14 more
wiley +1 more source
Development of a Nb‐Based Semiconductor‐Superconductor Hybrid 2DEG Platform
Advanced Electronic MaterialsSemiconductor‐superconductor hybrid materials are used as a platform to realize Andreev bound states, which hold great promise for quantum applications.
Sjoerd Telkamp +14 more
doaj +1 more source
Uranium Doped Gallium Nitride Epitaxial Thin Films
Advanced Electronic Materials, EarlyView.Uranium was controllably added to gallium nitride using molecular beam epitaxy. The uranium atoms segregated into vertically oriented regions with higher doping levels. Concentrations up to a few percent were achieved without showing significant degradation in the crystalline quality or optical characteristics. Low electrical resistivity was maintained
J. Pierce Fix +10 more
wiley +1 more source
Topological Materials and Related Applications
Advanced Electronic Materials, EarlyView.This review covers topological materials—including topological insulators, quantum valley Hall and quantum spin Hall insulators, and topological Weyl and Dirac semimetals—as well as their most recent advancements in fields such as spintronics, electronics, photonics, thermoelectrics, and catalysis.
Carlo Grazianetti +9 more
wiley +1 more source
Strain Programming of Oxygen Octahedral Symmetry in Perovskite Oxide Thin Films
Advanced Materials InterfacesThe collective rotations of oxygen octahedra play an important role in determining the physical properties of functional perovskite oxides. The epitaxial strain can serve as an effective means to modify the oxygen octahedral symmetry (OOS), i.e., oxygen ...
Yunkyu Park +12 more
doaj +1 more source
2.0–2.2 eV AlGaInP solar cells grown by molecular beam epitaxy
, 2020 Yukun Sun +6 more
openalex +2 more sources