Results 91 to 100 of about 62,943 (302)

Morphology of Diamond Layers Grown on Different Facets of Single Crystal Diamond Substrates by a Microwave Plasma CVD in CH4-H2-N2 Gas Mixtures

Crystals, 2017
Epitaxial growth of diamond films on different facets of synthetic IIa-type single crystal (SC) high-pressure high temperature (HPHT) diamond substrate by a microwave plasma CVD in CH4-H2-N2 gas mixture with the high concentration (4%) of nitrogen is ...
Evgeny E. Ashkinazi, Roman A. Khmelnitskii, Vadim S. Sedov, Andrew A. Khomich, Alexander V. Khomich, Viktor G. Ralchenko   +5 more
doaj   +1 more source

Flexoelectricity in Photoconversion: Fundamentals, Materials, and Outlooks

Advanced Science, EarlyView.
Mechanical bending of a flexible cantilever induces a strain gradient in the photoactive material. The resulting flexoelectric field couples with photovoltaic and photoconductive effects, modulating charge generation, separation, and collection. A comparative analysis of oxide perovskites, halide perovskites, and two‐dimensional materials is presented,
Xiang Huang, Feng Li, Rongkun Zheng
wiley   +1 more source

Atomic‐Scale Epitaxy for Tailoring Crystalline GeSbTe Alloys Into Bidimensional Phases

Advanced Materials Interfaces
In this study, we establish an accurate growth diagram—describing the phase, composition, and atomic stacking of Ge‐Sb‐Te alloys (GST)—that can be used as a prediction tool for thin film deposition.
Valeria Bragaglia, Fabrizio Arciprete, Simone Prili, Yukihiko Takagaki, Antonio Massimiliano Mio, Riccardo Mazzarello, Jos Emiel Boschker, Raffaella Calarco   +7 more
doaj   +1 more source

Growth of Ordered Graphene Ribbons by Sublimation Epitaxy

Crystals, 2018
Ordered graphene ribbons were grown on the surface of 4° off-axis 4H-SiC wafers by sublimation epitaxy, and characterized by using scanning electron microscopy (SEM), atomic force microscopy (AFM) and micro-Raman spectroscopy (μ-Raman).
Shuxian Cai, Xingfang Liu, Xin Zheng, Zhonghua Liu   +3 more
doaj   +1 more source

Vacuum Chemical Epitaxy: High Throughput GaAs Epitaxy Without Arsine

, 1989
Metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) are well established methods for growing epitaxial GaAs and AlGaAs films.
V. S. Sundaram, Chris Master, Rick Stall, G. R. Girard, L. M. Fraas   +4 more
core   +1 more source

Phase‐Dependent Oxygen Defect Energetics in Epitaxial NbN/AlN/NbN Films

Advanced Science, EarlyView.
Phase dependent oxygen defect energetics in epitaxial δ‐NbN/AlN/δ‐NbN and β‐Nb2N/AlN/β‐Nb2N trilayers. Atomic‐scale analysis and first‐principles calculations reveal distinct oxygen incorporation pathways across NbN polymorphs. Layer resolved defect formation energies show that O is energetically more favorable within δ‐NbN electrodes, whereas in β ...
Prachi Garg, Kedarsh Kaushik, Danqing Wang, Naomi Pieczulewski, Anand Ithepalli, John Wright, Debdeep Jena, David A. Muller, Hong X. Tang, Cyrus Dreyer, Baishakhi Mazumder   +10 more
wiley   +1 more source

Solar Hydrogen Production with Metal/III–V Semiconductor Junction Monolithically Integrated on Si

ChemElectroChem
GaAs is an excellent candidate for high‐performance photoelectrochemical water splitting due to its appropriate band‐edge and bandgap energies, as well as its excellent transport properties.
Hanh Vi Le, Rozenn Bernard, Ludovic Largeau, Gilles Patriarche, Sylvain Febvre, Fatima Merhi, Bienvenu Boulingui Koumba, Antoine Létoublon, Christophe Levallois, Fauzia Jabeen, Sylvie Harel, Angus Rockett, Xerxes K. Steirer, Tony Rohel, Karine Tavernier, Julie Le Pouliquen, Yoan Léger, Nicolas Bertru, Bruno Fabre, Gabriel Loget, Charles Cornet   +20 more
doaj   +1 more source

Nanoscale Confinement Enhances Ultrafast Demagnetization

Advanced Science, EarlyView.
Next generation spintronics may depend on successfully combining femtosecond spin dynamics with nanoscale device miniaturization. We address this by systematically studying the effect of nanoscale confinement on the femtosecond demagnetization of Iron. By combining ultrafast experiments sensitive to spins, charge carriers, and phonons, we uncover a nm ...
Yoav William Windsor, Tobias Lojewski, Moumita Kundu, Klaus Sokolowski‐Tinten, Nico Rothenbach, Andrea Eschenlohr, Markus Ernst Gruner, Katharina Ollefs, Carolin Schmitz‐Antoniak, Soma Salamon, Daniela Zahn, Laurenz Rettig, Christian Schüßler‐Langeheine, Niko Pontius, Renkai Li, Mianzhen Mo, Suji Park, Xiaoshe Shen, Stephen Weathersby, Xijie Wang, Rossitza Pentcheva, Heiko Wende, Ulrich Nowak, Uwe Bovensiepen   +23 more
wiley   +1 more source

Ga1-xMnxSb grown on GaSb substrate by liquid phase epitaxy

, 2004
The Gal(1-x)Mn(x)Sb epilayer was prepared on the n-type GaSb substrate by liquid phase epitaxy. The structure of the Gal(1-x)Mn(x)Sb epilayer was analyzed by double-crystal X-ray diffraction.
Chen CL, Chen NF, Chen, CL (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China., Chen, CL, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China., Li YL, Wu JL, 陈诺夫, Liu LF   +7 more
core   +1 more source

Dipolar Coupling Errors in Nuclear Spin Qubits

Advanced Science, EarlyView.
Multi‐nuclear spin registers of phosphorus‐atom qubits in silicon have demonstrated 99.99% single and >$>$99.9% two qubit gate fidelities. Despite nanometer separation, read‐out fidelities between individual nuclear spins within the register are not identical.
I. D. Thorvaldson, P. Macha, J. Reiner, S. H. Misha, Y. Chung, L. Kranz, D. Keith, S. Monir, D. Poulos, S. Sutherland, Y.‐L. Hsueh, B. Thorgrimsson, R. Rahman, J. G. Keizer, S. K. Gorman, M. Y. Simmons   +15 more
wiley   +1 more source