Results 91 to 100 of about 11,104 (255)

Photoelectric‐Coupled Ferroelectric Heterojunctions for Ultrahigh NO2 Sensing With Polarization‐Memory‐Assisted Interfacial Modulation

Advanced Science, EarlyView.
This study demonstrates a Bi2WO6/SrBi2Ta2O9 heterojunction where light‐driven ferroelectric polarization reversal couples with persistent photoconductivity, enabling exclusive NO2 selective room‐temperature sensing. The device achieves a two‐order‐of‐magnitude sensitivity enhancement over an unpolarized device, a sub‐ppb detection limit, and robust ...
Liping Tan, Xuefeng Hu, Ming Zhou, Weiwei Qing, Along Li, Zilong Wang, Mudan Feng, Shuang Zhao, Xiaoliang Wang, Peipei Li, Yali Bi, Wei Zhang   +11 more
wiley   +1 more source

Formation of MOS-transistors with isolation of active elements by oxiden porous silicon [PDF]

Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2009
The superthin functional layers of MOS-transistors require qualitative isolation of active elements. The new method of formation of epitaksial structures for technology «silicon - on-isolator» is offered on the basis of porous silicon.
Novosyadlyi S. P., Vivcharuk V. M.
doaj  

Growth‐Pathway‐Controlled van der Waals Epitaxy of Phase‐Selective Tin Sulfides

Advanced Science, EarlyView.
Growth‐pathway‐controlled van der Waals epitaxy enables deterministic phase selection and strain engineering in tin sulfide/WSe2 heterostructures. Direct growth of SnS induces substrate‐mediated strain and phase evolution, whereas sequential growth through an SnS2 buffer suppresses strain transfer and stabilizes pristine α‐SnS, revealing a versatile ...
Jaehyeok Lee, Jinwoo Kim, Gwan‐Hyoung Lee   +2 more
wiley   +1 more source

Development of a Nb‐Based Semiconductor‐Superconductor Hybrid 2DEG Platform

Advanced Electronic Materials
Semiconductor‐superconductor hybrid materials are used as a platform to realize Andreev bound states, which hold great promise for quantum applications.
Sjoerd Telkamp, Tommaso Antonelli, Clemens Todt, Manuel Hinderling, Marco Coraiola, Daniel Haxell, Sofieke C. ten Kate, Deividas Sabonis, Peng Zeng, Rüdiger Schott, Erik Cheah, Christian Reichl, Fabrizio Nichele, Filip Krizek, Werner Wegscheider   +14 more
doaj   +1 more source

Oxygen‐Assisted MOCVD Growth of Monolayer PtSe2 Films With Bandgap Opening for Semiconducting FET Channels

Advanced Science, EarlyView.
Monolayer PtSe2 films are successfully grown via optimized MOCVD, achieving uniform coverage over a 1.5 cm × 1.5 cm area. Oxygen‐assisted growth effectively removes carbon impurities, ensuring high film quality. Array‐level FETs based on monolayer PtSe2 channels demonstrate low off‐current and high ION/IOFF ratios, highlighting the potential of PtSe2 ...
Yuseok Kim, Hee‐Soo So, Minseok Yoo, Saeyoung Oh, Dongyoung Kim, Minseung Gyeon, Min‐Kyung Jo, Gichang Noh, Tae Soo Kim, Min‐gyu Kim, Jeongwon Park, Hyun‐Jun Chai, Minsoo Kang, Suhyun Kim, Ayoung Ham, Jaehyun Lee, Jongsun Lim, Seungwoo Song, Joon Young Kwak, Seunghwan Seo, Chang‐Soo Lee, Chang Gyoun Kim, Kibum Kang   +22 more
wiley   +1 more source

Phase‐Dependent Oxygen Defect Energetics in Epitaxial NbN/AlN/NbN Films

Advanced Science, EarlyView.
Phase dependent oxygen defect energetics in epitaxial δ‐NbN/AlN/δ‐NbN and β‐Nb2N/AlN/β‐Nb2N trilayers. Atomic‐scale analysis and first‐principles calculations reveal distinct oxygen incorporation pathways across NbN polymorphs. Layer resolved defect formation energies show that O is energetically more favorable within δ‐NbN electrodes, whereas in β ...
Prachi Garg, Kedarsh Kaushik, Danqing Wang, Naomi Pieczulewski, Anand Ithepalli, John Wright, Debdeep Jena, David A. Muller, Hong X. Tang, Cyrus Dreyer, Baishakhi Mazumder   +10 more
wiley   +1 more source

Strain Programming of Oxygen Octahedral Symmetry in Perovskite Oxide Thin Films

Advanced Materials Interfaces
The collective rotations of oxygen octahedra play an important role in determining the physical properties of functional perovskite oxides. The epitaxial strain can serve as an effective means to modify the oxygen octahedral symmetry (OOS), i.e., oxygen ...
Yunkyu Park, Seoung‐Hun Kang, Jeongkeun Song, Sang Woon Hwang, Shan Lin, Jong Mok Ok, Fazhi Yang, Hwangsun Kim, Andrew R. Lupini, Mina Yoon, Sangmoon Yoon, Hua Zhou, Ho Nyung Lee   +12 more
doaj   +1 more source

Nanoscale Confinement Enhances Ultrafast Demagnetization

Advanced Science, EarlyView.
Next generation spintronics may depend on successfully combining femtosecond spin dynamics with nanoscale device miniaturization. We address this by systematically studying the effect of nanoscale confinement on the femtosecond demagnetization of Iron. By combining ultrafast experiments sensitive to spins, charge carriers, and phonons, we uncover a nm ...
Yoav William Windsor, Tobias Lojewski, Moumita Kundu, Klaus Sokolowski‐Tinten, Nico Rothenbach, Andrea Eschenlohr, Markus Ernst Gruner, Katharina Ollefs, Carolin Schmitz‐Antoniak, Soma Salamon, Daniela Zahn, Laurenz Rettig, Christian Schüßler‐Langeheine, Niko Pontius, Renkai Li, Mianzhen Mo, Suji Park, Xiaoshe Shen, Stephen Weathersby, Xijie Wang, Rossitza Pentcheva, Heiko Wende, Ulrich Nowak, Uwe Bovensiepen   +23 more
wiley   +1 more source

Probing Type‐II Multiferroicity in Monolayer NiBr2

Advanced Science, EarlyView.
Type‐II multiferroicity is demonstrated in monolayer NiBr2. Scanning tunneling microscopy resolves ferroelectric polarization arising from non‐collinear magnetic order, and reciprocal control with electric and magnetic fields confirms intrinsic magnetoelectric coupling.
Aleš Cahlík, Antti Karjasilta, Anshika Mishra, Robert Drost, Mohammad Amini, Javaria Arshad, Büşra Gamze Arslan, Peter Liljeroth   +7 more
wiley   +1 more source

Influence of epitaxial stress on temperature-dependent ferroelectric endurance of Hf0.5Zr0.5O2 from cryogenic to ambient conditions

JPhys Materials
Herein, we describe a comparative study of the ferroelectric properties of epitaxial Hf _0.5 Zr _0.5 O _2 films grown on La _0.67 Sr _0.33 MnO _3 /SrTiO _3 (100) and La _0.67 Sr _0.33 MnO _3 /DyScO _3 (110) across a temperature range of 32–298 K for the ...
J W Adkins, S Kumari, T Gage, I Fina, F Sánchez   +4 more
doaj   +1 more source