Results 91 to 100 of about 142,351 (345)

Processing and characterization of epitaxial GaAs radiation detectors

, 2015
GaAs devices have relatively high atomic numbers (Z=31, 33) and thus extend the X-ray absorption edge beyond that of Si (Z=14) devices. In this study, radiation detectors were processed on GaAs substrates with 110 $\mu\textrm{m}$ - 130 $\mu\textrm{m ...
Arsenovich, T., Gädda, A., Härkönen, J., Junkes, A., Karadzhinova, A., Kostamo, P., Lipsanen, H., Luukka, P., Mattila, M., Nenonen, S., Peltola, T., Riekkinen, T., Tuominen, E., Winkler, A., Wu, X.   +14 more
core   +1 more source

Energy‐Resolved Femtosecond Dynamics of Plasmon‐Induced Hole Injection at Au/GaN Heterointerfaces

Advanced Science, EarlyView.
We reveal the spectral signature of ultrafast nonthermal hot‐hole transfer at plasmonic heterointerfaces, which reshapes hot‐carrier relaxation dynamics and significantly enhances hydrogen evolution, providing a mechanistic basis for optimizing hot‐carrier utilization in photocatalysis.
Yuying Gao, Yuxin Xie, Jonathan Diederich, Christian Höhn, Klaus Schwarzburg, Fengtao Fan, Can Li, Roel van de Krol, Dennis Friedrich   +8 more
wiley   +1 more source

Reduction of thermal conductivity by nanopillar inclusion in thermoelectric vertically aligned nanocomposites

JPhys Energy
The phonon-glass electron-crystal paradigm has guided thermoelectric research in recent years. However, the inherent conflict between atomic disorder reducing phonon conduction, and the order required to maintain high electron mobility, creates a ...
Marijn W van de Putte, Jasman Singh Gambhir, Nicolas Gauquelin, Alexandros Sarantopoulos, Daniel Monteiro Cunha, Johan Verbeeck, Gertjan Koster, Francisco Rivadulla, Mark Huijben   +8 more
doaj   +1 more source

Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy

Beilstein Journal of Nanotechnology, 2018
In this paper we study growth of quasi-one-dimensional GaN nanowires (NWs) and nanotube (NT)-like nanostructures on Si(111) substrates covered with a thin AlN layer grown by means of plasma-assisted molecular beam epitaxy.
Alexey D. Bolshakov, Alexey M. Mozharov, Georgiy A. Sapunov, Igor V. Shtrom, Nickolay V. Sibirev, Vladimir V. Fedorov, Evgeniy V. Ubyivovk, Maria Tchernycheva, George E. Cirlin, Ivan S. Mukhin   +9 more
doaj   +1 more source

Conformal Epitaxy Zno/Gaox Superlattices: From Theory to Experiment

, 2022
Lin Che-Min, Lin Che-Min, P.C. Kung, T. C. Leung, Qianmei Chen   +4 more
openalex   +1 more source

Tuning Defects in Ni‐Doped Maghemite for Enhanced Solar Driven Oxygen Evolution: Insights From Operando X‐Ray Spectroscopies

Advanced Science, EarlyView.
ABSTRACT Maghemite (γ$\gamma$‐Fe2${\rm Fe}_2$O3${\rm O}_{3}$) is a promising non‐precious‐metal‐containing photocatalyst for water oxidation (OER). Despite being less studied than Hematite, it offers similar corrosion resistance and a favorable band structure, along with higher conductivity and the advantage of an adaptable spinel structure.
Francesco Paparoni, Hélène Magnan, Antoine Barbier, Andrea Zitolo, AndreaDi Cicco, Javad Rezvani, Emiliano Fonda   +6 more
wiley   +1 more source

Advancing the Growth of GaN on AlScN and AlYN by Metal–Organic Chemical Vapor Deposition

Advanced Physics Research
High electron mobility transistors (HEMT) based on Al1‐xScxN/GaN and Al1‐xYxN/GaN heterostructures promise increased device performance and reliability due to the high sheet charge carrier density and the possibility to grow strain‐free layers on GaN ...
Isabel Streicher, Niklas Wolff, Teresa Duarte, Oliver Rehm, Patrik Straňák, Lutz Kirste, Mario Prescher, Xuyun Guo, Valeria Nicolosi, Lutz Baumgarten, Martina Müller, Lorenz Kienle, Stefano Leone   +12 more
doaj   +1 more source

Properties of epitaxial, (001)- and (110)-oriented (PbMg1/3Nb2/3O3)2/3-(PbTiO3)1/3 films on silicon described by polarization rotation

Science and Technology of Advanced Materials, 2016
Epitaxial (PbMg1/3Nb2/3O3)2/3-(PbTiO3)1/3 (PMN-PT) films with different out-of-plane orientations were prepared using a CeO2/yttria stabilized ZrO2 bilayer buffer and symmetric SrRuO3 electrodes on silicon substrates by pulsed laser deposition.
Muhammad Boota, Evert P. Houwman, Matthijn Dekkers, Minh D. Nguyen, Kurt H. Vergeer, Giulia Lanzara, Gertjan Koster, Guus Rijnders   +7 more
doaj   +1 more source

Morphology of Diamond Layers Grown on Different Facets of Single Crystal Diamond Substrates by a Microwave Plasma CVD in CH4-H2-N2 Gas Mixtures

Crystals, 2017
Epitaxial growth of diamond films on different facets of synthetic IIa-type single crystal (SC) high-pressure high temperature (HPHT) diamond substrate by a microwave plasma CVD in CH4-H2-N2 gas mixture with the high concentration (4%) of nitrogen is ...
Evgeny E. Ashkinazi, Roman A. Khmelnitskii, Vadim S. Sedov, Andrew A. Khomich, Alexander V. Khomich, Viktor G. Ralchenko   +5 more
doaj   +1 more source

Symmetry‐Driven Unconventional Magnetoelectric Coupling in Perovskite Altermagnets: From Bulk to the Two‐Dimensional Limit

Advanced Science, EarlyView.
The symmetry‐driven coexistence of altermagnetism and (anti)ferroelectricity in perovskites shows a strong dimensional dependence. Upon reducing the system from bulk to the two‐dimensional limit, only C‐type antiferromagnetic order retains ferroelectrically switchable altermagnetism, whereas A‐ and G‐type orders become conventional antiferromagnets ...
Zhou Cui, Ziye Zhu, Xunkai Duan, Bowen Hao, Xianzhang Chen, Jiayong Zhang, Tong Zhou   +6 more
wiley   +1 more source