Results 91 to 100 of about 53,075 (307)

2 dimensional electron gas uniformity of GaN HFET layers on SiC [PDF]

, 2012
As GaN power transistor technology matures it is increasingly important to understand any links between substrate “quality”, epi-layer growth and electrical characteristics of the 2-dimensional electron gas (2DEG), which forms the active part of devices.
D.J. Wallis, Koker, L, T. Martin, M.J. Uren, Wallis, D J, Uren, M J, Wright, P J, Soley, D E J, P.J. Wright, D.E.J. Soley, L. Koker, Martin, T   +11 more
core   +1 more source

Buried Unstrained Germanium Channels: A Lattice‐Matched Platform for Quantum Technology

Advanced Science, EarlyView.
ABSTRACT Strained germanium (ε$\varepsilon$‐Ge) and strained silicon (ε$\varepsilon$‐Si) buried quantum wells have enabled advanced spin‐qubit quantum processors. However, in the absence of suitable lattice‐matched substrates, ε$\varepsilon$‐Ge and ε$\varepsilon$‐Si are deposited on defective, metamorphic SiGe buffers, which may impact device ...
Davide Costa, Patrick Del Vecchio, Karina Hudson, Lucas E. A. Stehouwer, Alberto Tosato, Davide Degli Esposti, Vladimir Calvi, Luca Moreschini, Mario Lodari, Stefano Bosco, Giordano Scappucci   +10 more
wiley   +1 more source

Reduction of thermal conductivity by nanopillar inclusion in thermoelectric vertically aligned nanocomposites

JPhys Energy
The phonon-glass electron-crystal paradigm has guided thermoelectric research in recent years. However, the inherent conflict between atomic disorder reducing phonon conduction, and the order required to maintain high electron mobility, creates a ...
Marijn W van de Putte, Jasman Singh Gambhir, Nicolas Gauquelin, Alexandros Sarantopoulos, Daniel Monteiro Cunha, Johan Verbeeck, Gertjan Koster, Francisco Rivadulla, Mark Huijben   +8 more
doaj   +1 more source

Growth and applications of GeSn-related group-IV semiconductor materials

Science and Technology of Advanced Materials, 2015
We review the technology of Ge1−xSnx-related group-IV semiconductor materials for developing Si-based nanoelectronics. Ge1−xSnx-related materials provide novel engineering of the crystal growth, strain structure, and energy band alignment for realising ...
Shigeaki Zaima, Osamu Nakatsuka, Noriyuki Taoka, Masashi Kurosawa, Wakana Takeuchi, Mitsuo Sakashita   +5 more
doaj   +1 more source

THE INFLUENCE OF STRUCTURAL DEFECTS ON THE KINETICS OF DIFFUSION PROCESSES

Вестник Дагестанского государственного технического университета: Технические науки, 2016
At present there are various methods of control, based on various physical principles and possessing a wide variety of different sensitivity, diversity of applications.
Т. E. Sarkarov
doaj   +1 more source

Synaptic κ‐Ga2O3 Photodetectors for Privacy‐Enhancing Neuromorphic Computing

Advanced Science, EarlyView.
We report on a single‐element neuromorphic sensor based on the persistent photoconductivity (PPC) of κ‐phase Ga2O3 capable of sensing ultraviolet light and harnessing intrinsic data privacy. The approach establishes a materials‐enabled pathway toward compact, intelligent, and privacy‐enhancing optoelectronic hardware for next‐generation edge systems ...
Yanqing Jia, Heming Lin, Hongliang Chang, Wenqing Niu, Yue Wang, Hang Lu, Abdullah AlQuwayzani, Yara Banda, Long Chen, Qingxiao Wang, Bambar Davaasuren, Mohamed Ben Hassine, Tien Khee Ng, Boon S. Ooi   +13 more
wiley   +1 more source

Advancing the Growth of GaN on AlScN and AlYN by Metal–Organic Chemical Vapor Deposition

Advanced Physics Research
High electron mobility transistors (HEMT) based on Al1‐xScxN/GaN and Al1‐xYxN/GaN heterostructures promise increased device performance and reliability due to the high sheet charge carrier density and the possibility to grow strain‐free layers on GaN ...
Isabel Streicher, Niklas Wolff, Teresa Duarte, Oliver Rehm, Patrik Straňák, Lutz Kirste, Mario Prescher, Xuyun Guo, Valeria Nicolosi, Lutz Baumgarten, Martina Müller, Lorenz Kienle, Stefano Leone   +12 more
doaj   +1 more source

Investigation of Defect Propagation in 4H-SiC: From Substrate to Epitaxial Layers

Applied Sciences
Silicon carbide (SiC) is the leading wide bandgap semiconductor for high-power and high-temperature electronics, but the high defect density still limits device performance.
Francesco Maria Fiorino, Francesco Ruffino, Alberto Catena   +2 more
doaj   +1 more source

Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy

Beilstein Journal of Nanotechnology, 2018
In this paper we study growth of quasi-one-dimensional GaN nanowires (NWs) and nanotube (NT)-like nanostructures on Si(111) substrates covered with a thin AlN layer grown by means of plasma-assisted molecular beam epitaxy.
Alexey D. Bolshakov, Alexey M. Mozharov, Georgiy A. Sapunov, Igor V. Shtrom, Nickolay V. Sibirev, Vladimir V. Fedorov, Evgeniy V. Ubyivovk, Maria Tchernycheva, George E. Cirlin, Ivan S. Mukhin   +9 more
doaj   +1 more source

Flexoelectricity in Photoconversion: Fundamentals, Materials, and Outlooks

Advanced Science, EarlyView.
Mechanical bending of a flexible cantilever induces a strain gradient in the photoactive material. The resulting flexoelectric field couples with photovoltaic and photoconductive effects, modulating charge generation, separation, and collection. A comparative analysis of oxide perovskites, halide perovskites, and two‐dimensional materials is presented,
Xiang Huang, Feng Li, Rongkun Zheng
wiley   +1 more source