Results 21 to 30 of about 142,351 (345)

In situ real-time analysis of alloy film composition and segregation dynamics with parallel detection reflection electron energy loss spectroscopy [PDF]

, 1997
Real-time measurements of GexSi1 – x/Si(001) composition and segregation dynamics in Sn/Si(001) in molecular beam epitaxy are demonstrated using parallel detection reflection electron energy loss spectroscopy.
Ahn, C. C., Atwater, H. A., He, G., Tambo, T., Taylor, M. E., Wong, S. S., Yoshino, H.   +6 more
core   +1 more source

CVD growth of high speed SiGe HBTs using SiH4

Journal of Telecommunications and Information Technology, 2000
The growth of high frequency HBT structures using silane-based epitaxy has been studied. The integrity of SiGe layers in the base and the control of the collector profile using As- or P-doping grown at 650 oC have been investigated.
Henry H. Radamson, Jan Grahn, Gunnar Landgren   +2 more
doaj   +1 more source

Applications of remote epitaxy and van der Waals epitaxy

Nano Convergence, 2023
AbstractEpitaxy technology produces high-quality material building blocks that underpin various fields of applications. However, fundamental limitations exist for conventional epitaxy, such as the lattice matching constraints that have greatly narrowed down the choices of available epitaxial material combinations.
Ilpyo Roh, Seok Hyeon Goh, Yuan Meng, Justin S. Kim, Sangmoon Han, Zhihao Xu, Han Eol Lee, Yeongin Kim, Sang-Hoon Bae   +8 more
openaire   +3 more sources

XRD and photoluminescence measurements of GaN grown on dome shaped patterned sapphire with different NH3 flow rates

Cumhuriyet Science Journal, 2021
The aim of the study is to understand the effects of NH3 flow rate in the initial part of high temperature (HT) GaN growth on structural and optical characteristics of the HT-GaN layer grown on dome shaped sapphire susbtrate by Metal Organic Chemical ...
İsmail Altuntas
doaj   +1 more source

Effect of annealing temperature on the morphology, structure, and optical properties of nanostructured SnO(x) films

Materials Research Express, 2020
Nanostructured SnO(x) films were obtained by molecular beam epitaxy (MBE). The morphology, structure, and optical properties of obtained films annealed in the temperature range of 200 °C–1000 °C were studied.
Vyacheslav A Timofeev, Vladimir I Mashanov, Alexandr I Nikiforov, Ivan A Azarov, Ivan D Loshkarev, Ilya V Korolkov, Tatyana A Gavrilova, M Yu Yesin, Igor A Chetyrin   +8 more
doaj   +1 more source

Theoretical Investigation of Optical Intersubband Transitions and Infrared Photodetection in ${\beta}$-(AlxGa1-x)2O3/Ga2O3 Quantum Well Structures

, 2020
We provide theoretical consideration of intersubband transitions designed in the ultrawide bandgap Aluminum Gallium Oxide ((AlxGa1-x)2O3)/Gallium Oxide (Ga2O3)) quantum well system.
Krishnamoorthy, Sriram, Lyman, Joseph E.
core   +1 more source

Nature of the Pits on the Lattice-Matched InAlAs Layer Surface Grown on the (001) InP Substrate

Nanomaterials
The structural properties of lattice-matched InAlAs/InP layers grown by molecular beam epitaxy have been studied using atomic force microscopy, scanning electron microscopy and micro-photoluminescence spectroscopy.
Dmitrii V. Gulyaev, Demid S. Abramkin, Dmitriy V. Dmitriev, Alexander I. Toropov, Eugeniy A. Kolosovsky, Sergey A. Ponomarev, Nina N. Kurus, Ilya A. Milekhin, Konstantin S. Zhuravlev   +8 more
doaj   +1 more source

Inhomogeneous low temperature epitaxial breakdown during Si overgrowth of GeSi quantum dots

, 2011
Low temperature epitaxial breakdown of inhomogeneously strained Si capping layers is investigated. By growing Si films on coherently strained GeSi quantum dot surfaces, we differentiate effects of surface roughness, strain, and growth orientation on the ...
Floro, Jerrold A., Petz, Christopher W.
core   +1 more source

Workflow for Design of Experiments‐Based Modeling of Species Transport and Growth Kinetics in GaN Hydride Vapor Phase Epitaxy

Advanced Engineering Materials, EarlyView.
A novel workflow for investigating hydride vapor phase epitaxy for GaN bulk crystal growth is proposed. It combines Design of experiments (DoE) with physical simulations of mass transport and crystal growth kinetics, serving as an intermediate step between DoE and experiments.
J. Tomkovič, G. Lukin, H. Torkashvand, A. Kerschbaum, M. Müller, S. Besendörfer, J. Heitmann, J. Friedrich   +7 more
wiley   +1 more source

Graphene growth on h-BN by Molecular Beam Epitaxy

, 2012
The growth of single layer graphene nanometer size domains by solid carbon source molecular beam epitaxy on hexagonal boron nitride (h-BN) flakes is demonstrated. Formation of single-layer graphene is clearly apparent in Raman spectra which display sharp
Annette S. Plaut, Antonio Levy, Arend M. Van Der Zande, Aron Pinczuk, Bischoff, Cory R. Dean, Das, Dean, Ferrari, Ferrari, Ferrari, Garcia, Garcia, Geim, Graf, Han, James Hone, Jerng, Jorge M. Garcia, Kenji Watanabe, Kim, Koma, Koma, Lei Wang, Li, Lippert, Loren N. Pfeiffer, Martins Ferreira, Moreau, Park, Pimenta, Reich, Roberto Buizza, Ryu, Rümmeli, Son, Stampfer, Takashi Taniguchi, Ulrich Wurstbauer, Wang, Xue   +40 more
core   +1 more source