Results 21 to 30 of about 62,943 (302)

Tunable Bragg polaritons and nonlinear emission from a hybrid metal-unfolded ZnSe-based microcavity

Scientific Reports, 2017
Strong light-matter interaction in Bragg structures possesses several advantages over conventional microcavity system. These structures provide an opportunity to incorporate a large number of quantum wells without increasing the mode volume.
SK. Shaid-Ur Rahman, Thorsten Klein, Jürgen Gutowski, Sebastian Klembt, Kathrin Sebald   +4 more
doaj   +1 more source

SiGe field effect transistors

Journal of Telecommunications and Information Technology, 2001
Recent and encouraging developments in Schot- tky and MOS gated Si/SiGe field effect transistors are sur- veyed. Circuit applications are now beginning to be investi- gated.
Terrence E. Whall , Evan H. C. Parker
doaj   +1 more source

CVD growth of high speed SiGe HBTs using SiH4

Journal of Telecommunications and Information Technology, 2000
The growth of high frequency HBT structures using silane-based epitaxy has been studied. The integrity of SiGe layers in the base and the control of the collector profile using As- or P-doping grown at 650 oC have been investigated.
Henry H. Radamson, Jan Grahn, Gunnar Landgren   +2 more
doaj   +1 more source

Effect of annealing temperature on the morphology, structure, and optical properties of nanostructured SnO(x) films

Materials Research Express, 2020
Nanostructured SnO(x) films were obtained by molecular beam epitaxy (MBE). The morphology, structure, and optical properties of obtained films annealed in the temperature range of 200 °C–1000 °C were studied.
Vyacheslav A Timofeev, Vladimir I Mashanov, Alexandr I Nikiforov, Ivan A Azarov, Ivan D Loshkarev, Ilya V Korolkov, Tatyana A Gavrilova, M Yu Yesin, Igor A Chetyrin   +8 more
doaj   +1 more source

XRD and photoluminescence measurements of GaN grown on dome shaped patterned sapphire with different NH3 flow rates

Cumhuriyet Science Journal, 2021
The aim of the study is to understand the effects of NH3 flow rate in the initial part of high temperature (HT) GaN growth on structural and optical characteristics of the HT-GaN layer grown on dome shaped sapphire susbtrate by Metal Organic Chemical ...
İsmail Altuntas
doaj   +1 more source

Nature of the Pits on the Lattice-Matched InAlAs Layer Surface Grown on the (001) InP Substrate

Nanomaterials
The structural properties of lattice-matched InAlAs/InP layers grown by molecular beam epitaxy have been studied using atomic force microscopy, scanning electron microscopy and micro-photoluminescence spectroscopy.
Dmitrii V. Gulyaev, Demid S. Abramkin, Dmitriy V. Dmitriev, Alexander I. Toropov, Eugeniy A. Kolosovsky, Sergey A. Ponomarev, Nina N. Kurus, Ilya A. Milekhin, Konstantin S. Zhuravlev   +8 more
doaj   +1 more source

Emergence of Unconventional Magnetic Order in Strain-Engineered RuO₂/TiO₂ Superlattices. [PDF]

Adv Sci (Weinh)
Epitaxial strain activates unconventional magnetism in rutile RuO2, absent in bulk or relaxed RuO2. Polarized neutron reflectometry with atomic‐layer resolution directly reveals finite magnetization confined to RuO2 layers in fully strained RuO2/TiO2 superlattices on TiO2 (110).
Jeong SG, Lee S, Oh JY, Lin BYX, Santhosh A, Song S, Park S, LeBeau JM, Grutter AJ, Choi WS, Low T, Lauter V, Jalan B.   +12 more
europepmc   +2 more sources

Workflow for Design of Experiments‐Based Modeling of Species Transport and Growth Kinetics in GaN Hydride Vapor Phase Epitaxy

Advanced Engineering Materials, EarlyView.
A novel workflow for investigating hydride vapor phase epitaxy for GaN bulk crystal growth is proposed. It combines Design of experiments (DoE) with physical simulations of mass transport and crystal growth kinetics, serving as an intermediate step between DoE and experiments.
J. Tomkovič, G. Lukin, H. Torkashvand, A. Kerschbaum, M. Müller, S. Besendörfer, J. Heitmann, J. Friedrich   +7 more
wiley   +1 more source

Molecular beam epitaxy growth of lattice-matched AlGaInAs/GaInAs multiple quantum well distributed feedback laser structures with gratings defined by implantation enhanced intermixing

, 2022
S.1323-1327AlGaInAs/GaInAs multiple quantum well (MQWs) are particularly suited for planar device integration using local refractive index modification by masked implantation enhanced intermixing (MIEI).
Hofsass, V., Kunzel, H., Bottcher, J., Schweizer, H., Hase, A., Kaden, C.   +5 more
core   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

Advanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand, Nuno Estrócio, Ji S. Kim, Babak Bakhit, Marian C. Istrate, Corneliu Ghica, Tiago Rebelo, Nives Strkalj, Abin Varghese, Bernardo Almeida, Luís S. Marques, Bipin Rajendran, Judith L. MacManus‐Driscoll, José P. B. Silva   +13 more
wiley   +1 more source