Results 21 to 30 of about 53,075 (307)

Graphitic platform for self-catalysed InAs nanowires growth by molecular beam epitaxy [PDF]

, 2014
We report the self-catalysed growth of InAs nanowires (NWs) on graphite thin films using molecular beam epitaxy via a droplet-assisted technique. Through optimising metal droplets, we obtained vertically aligned InAs NWs with highly uniform diameter ...
Anyebe, Ezekiel A., Benjamin J Robinson, Fal'ko, Vladimir; id_orcid, Ana M Sanchez, Sánchez, Ana M., Ezekiel A Anyebe, Oleg Kolosov, Veal, T. D. (Tim D.), Zhukov, Alexander, Anyebe, Ezekiel, Zhuang, Qiandong, Veal, Tim D, Robinson, Benjamin, Zhuang, Qian D, Robinson, Benjamin J, Mohana K Rajpalke, Anyebe, Ezekiel A, Rajpalke, Mohana K, Veal, Tim D., Fal?ko, Vladimir, Zhuang, Qian D., Sanchez, A. M., Robinson, Benjamin J., Rajpalke, Mohana K., Anderson, Frazer, Falko, Vladimir, Frazer Anderson, Fal’ko, Vladimir, Vladimir Fal’ko, Tim D Veal, Alexander Zhukov, Qian D Zhuang, Kolosov, Oleg, Sanchez, Ana M   +33 more
core   +1 more source

Epitaxial Graphene on Metals [PDF]

, 2011
In this chapter, we review the recent results on graphene films epitaxially grown on 3d − 5d transition-metal surfaces focussing mainly on their atomic structure, aspects of chemical interaction both with the substrate and with adsorbates and the electronic structure of graphene at the interface.
Dedkov, Yuriy S., Fonin, Mikhail, Horn, Karsten, Preobrajenski, Alexei   +3 more
openaire   +3 more sources

Characterisation of InAs/GaAs short period superlattices using column ratio mapping in aberration-corrected scanning transmission electron microscopy [PDF]

, 2012
The image processing technique of columnratiomapping was applied to aberration-corrected high angle annular dark field (HAADF) images of shortperiod MBE (molecular beam epitaxy) grown InAs/GaAssuperlattices. This method allowed the Indium distribution to
Finnie, M., Robb, P.D., Craven, A.J.
core   +1 more source

Aging in epitaxial ferroelectric PbTiO3 films [PDF]

Journal of Advanced Dielectrics, 2016
Ability of epitaxial perovskite oxide ferroelectric films to maintain a poled polarization state on a long-term scale is crucial for advanced devices employing such films.
Jari Hannu, Jani Peräntie, Sergiu Mihai Stratulat, Heli Jantunen, Marina Tyunina   +4 more
doaj   +1 more source

In-situ Al0.24Ga0.24In0.52As surface cleaning procedure using hydrogen radicals for molecular beam epitaxy regrowth

, 2022
S.18-22In situ hydrogen radical treatment in a processing chamber attached to a molecular beam epitaxy (MBE) system is successfully applied for the native oxide removal from AlGaInAs surfaces exposed to air prior to MBE regrowth.
Bochnia, R., Griebenow, U., Kunzel, H., Bottcher, J., Harde, P., Hase, A.   +5 more
core   +1 more source

Modeling and Control of Epitaxial Thin Film Growth [PDF]

, 2003
Thin film deposition is a manufacturing process in which tolerances may approach the size of individual atoms. The final film is highly sensitive to the processing conditions, which can be intentionally manipulated to control film properties. A lattice
Gallivan, Martha Anne
core   +1 more source

Molecular beam epitaxy growth of lattice-matched AlGaInAs/GaInAs multiple quantum well distributed feedback laser structures with gratings defined by implantation enhanced intermixing

, 2022
S.1323-1327AlGaInAs/GaInAs multiple quantum well (MQWs) are particularly suited for planar device integration using local refractive index modification by masked implantation enhanced intermixing (MIEI).
Hofsass, V., Kunzel, H., Bottcher, J., Schweizer, H., Hase, A., Kaden, C.   +5 more
core   +1 more source

Tunable Bragg polaritons and nonlinear emission from a hybrid metal-unfolded ZnSe-based microcavity

Scientific Reports, 2017
Strong light-matter interaction in Bragg structures possesses several advantages over conventional microcavity system. These structures provide an opportunity to incorporate a large number of quantum wells without increasing the mode volume.
SK. Shaid-Ur Rahman, Thorsten Klein, Jürgen Gutowski, Sebastian Klembt, Kathrin Sebald   +4 more
doaj   +1 more source

SiGe field effect transistors

Journal of Telecommunications and Information Technology, 2001
Recent and encouraging developments in Schot- tky and MOS gated Si/SiGe field effect transistors are sur- veyed. Circuit applications are now beginning to be investi- gated.
Terrence E. Whall , Evan H. C. Parker
doaj   +1 more source

CVD growth of high speed SiGe HBTs using SiH4

Journal of Telecommunications and Information Technology, 2000
The growth of high frequency HBT structures using silane-based epitaxy has been studied. The integrity of SiGe layers in the base and the control of the collector profile using As- or P-doping grown at 650 oC have been investigated.
Henry H. Radamson, Jan Grahn, Gunnar Landgren   +2 more
doaj   +1 more source