Results 21 to 30 of about 11,104 (255)

Aging in epitaxial ferroelectric PbTiO3 films [PDF]

Journal of Advanced Dielectrics, 2016
Ability of epitaxial perovskite oxide ferroelectric films to maintain a poled polarization state on a long-term scale is crucial for advanced devices employing such films.
Jari Hannu, Jani Peräntie, Sergiu Mihai Stratulat, Heli Jantunen, Marina Tyunina   +4 more
doaj   +1 more source

Tunable Bragg polaritons and nonlinear emission from a hybrid metal-unfolded ZnSe-based microcavity

Scientific Reports, 2017
Strong light-matter interaction in Bragg structures possesses several advantages over conventional microcavity system. These structures provide an opportunity to incorporate a large number of quantum wells without increasing the mode volume.
SK. Shaid-Ur Rahman, Thorsten Klein, Jürgen Gutowski, Sebastian Klembt, Kathrin Sebald   +4 more
doaj   +1 more source

SiGe field effect transistors

Journal of Telecommunications and Information Technology, 2001
Recent and encouraging developments in Schot- tky and MOS gated Si/SiGe field effect transistors are sur- veyed. Circuit applications are now beginning to be investi- gated.
Terrence E. Whall , Evan H. C. Parker
doaj   +1 more source

CVD growth of high speed SiGe HBTs using SiH4

Journal of Telecommunications and Information Technology, 2000
The growth of high frequency HBT structures using silane-based epitaxy has been studied. The integrity of SiGe layers in the base and the control of the collector profile using As- or P-doping grown at 650 oC have been investigated.
Henry H. Radamson, Jan Grahn, Gunnar Landgren   +2 more
doaj   +1 more source

Effect of annealing temperature on the morphology, structure, and optical properties of nanostructured SnO(x) films

Materials Research Express, 2020
Nanostructured SnO(x) films were obtained by molecular beam epitaxy (MBE). The morphology, structure, and optical properties of obtained films annealed in the temperature range of 200 °C–1000 °C were studied.
Vyacheslav A Timofeev, Vladimir I Mashanov, Alexandr I Nikiforov, Ivan A Azarov, Ivan D Loshkarev, Ilya V Korolkov, Tatyana A Gavrilova, M Yu Yesin, Igor A Chetyrin   +8 more
doaj   +1 more source

XRD and photoluminescence measurements of GaN grown on dome shaped patterned sapphire with different NH3 flow rates

Cumhuriyet Science Journal, 2021
The aim of the study is to understand the effects of NH3 flow rate in the initial part of high temperature (HT) GaN growth on structural and optical characteristics of the HT-GaN layer grown on dome shaped sapphire susbtrate by Metal Organic Chemical ...
İsmail Altuntas
doaj   +1 more source

Applications of remote epitaxy and van der Waals epitaxy

Nano Convergence, 2023
AbstractEpitaxy technology produces high-quality material building blocks that underpin various fields of applications. However, fundamental limitations exist for conventional epitaxy, such as the lattice matching constraints that have greatly narrowed down the choices of available epitaxial material combinations.
Ilpyo Roh, Seok Hyeon Goh, Yuan Meng, Justin S. Kim, Sangmoon Han, Zhihao Xu, Han Eol Lee, Yeongin Kim, Sang-Hoon Bae   +8 more
openaire   +3 more sources

Nature of the Pits on the Lattice-Matched InAlAs Layer Surface Grown on the (001) InP Substrate

Nanomaterials
The structural properties of lattice-matched InAlAs/InP layers grown by molecular beam epitaxy have been studied using atomic force microscopy, scanning electron microscopy and micro-photoluminescence spectroscopy.
Dmitrii V. Gulyaev, Demid S. Abramkin, Dmitriy V. Dmitriev, Alexander I. Toropov, Eugeniy A. Kolosovsky, Sergey A. Ponomarev, Nina N. Kurus, Ilya A. Milekhin, Konstantin S. Zhuravlev   +8 more
doaj   +1 more source

Workflow for Design of Experiments‐Based Modeling of Species Transport and Growth Kinetics in GaN Hydride Vapor Phase Epitaxy

Advanced Engineering Materials, EarlyView.
A novel workflow for investigating hydride vapor phase epitaxy for GaN bulk crystal growth is proposed. It combines Design of experiments (DoE) with physical simulations of mass transport and crystal growth kinetics, serving as an intermediate step between DoE and experiments.
J. Tomkovič, G. Lukin, H. Torkashvand, A. Kerschbaum, M. Müller, S. Besendörfer, J. Heitmann, J. Friedrich   +7 more
wiley   +1 more source

Omnipolar Magnetic Field Detection by Superlattice‐Based Hall Sensor

Advanced Functional Materials, EarlyView.
Magnetic‐field‐induced electronic switching is demonstrated in unit‐cell‐engineered La0.7Sr0.3MnO3–BiFeO3 superlattices. Distinct substrate terminations modify magnetic and transport properties. Hall resistance measurements show omnipolar, hysteretic anomalous Hall switching above the Curie temperature, arising from Fe─Mn interfacial exchange, enabling
Mark Huijben, Nicolas Gauquelin, Arno Annys, Zhaoliang Liao, Jo Verbeeck, Guus Rijnders, Gertjan Koster   +6 more
wiley   +1 more source