Facet modulation selective epitaxy–a technique for quantum-well wire doublet fabrication [PDF]
, 1992 The technique of facet modulation selective epitaxy and its application to quantum-well wire doublet fabrication are described. Successful fabrication of wire doublets in the AlxGa1–xAs material system is achieved.
Ahn, Channing C. +4 more
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Epitaxial Graphene on Metals [PDF]
, 2011 In this chapter, we review the recent results on graphene films epitaxially grown on 3d − 5d transition-metal surfaces focussing mainly on their atomic structure, aspects of chemical interaction both with the substrate and with adsorbates and the electronic structure of graphene at the interface.
Dedkov, Yuriy S. +3 more
openaire +3 more sources
Size dependent line broadening in the emission spectra of single GaAs quantum dots: Impact of surface charges on spectral diffusion [PDF]
, 2015 Making use of droplet epitaxy, we systematically controlled the height of self-assembled GaAs quantum dots by more than one order of magnitude. The photoluminescence spectra of single quantum dots revealed the strong dependence of the spectral linewidth ...
Bocquel, J. +10 more
core +7 more sources
Investigation of laser ablated ZnO thin films grown with Zn metal target: a structural study [PDF]
, 2004 High quality ZnO thin films were gown using the pulsed laser deposition technique on (0001) Al$_2$O$_3$ substrates in an oxidizing atmosphere, using a Zn metallic target.
A. Fouchet +6 more
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Aging in epitaxial ferroelectric PbTiO3 films [PDF]
Journal of Advanced Dielectrics, 2016 Ability of epitaxial perovskite oxide ferroelectric films to maintain a poled polarization state on a long-term scale is crucial for advanced devices employing such films.
Jari Hannu +4 more
doaj +1 more source
Molecular beam epitaxy of highly mismatched N-rich GaNSb and InNAs alloys [PDF]
, 2013 GaN materials alloyed with group V anions form the so-called highly mismatched alloys (HMAs). Recently, the authors succeeded in growing N-rich GaNAs and GaNBi alloys over a large composition range by plasma-assisted molecular beam epitaxy (PA-MBE). Here,
Detert, D. +10 more
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Submilliamp threshold InGaAs-GaAs strained layer quantum-well laser [PDF]
, 1990 Strained-layer InGaAs-GaAs single-quantum-well buried-heterostructure lasers were fabricated by a hybrid beam epitaxy and liquid-phase epitaxy technique. Very low threshold currents, 2.4 mA for an uncoated laser (L=425 μm) and 0.75 mA for a coated laser (
Chen, T. R. +6 more
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Orientation-dependent pseudomorphic growth of InAs for use in lattice-mismatched mid-infrared photonic structures [PDF]
, 2014 In this study, InAs was deposited on GaAs (100) and GaAs (111)B 2 degrees towardssubstrates for the purpose of differentiating the InAs growth mode stemming from strain and then analyzed using in-situ reflection high energy electron diffraction, scanning
Cheng, Emily +2 more
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Tunable Bragg polaritons and nonlinear emission from a hybrid metal-unfolded ZnSe-based microcavity
Scientific Reports, 2017 Strong light-matter interaction in Bragg structures possesses several advantages over conventional microcavity system. These structures provide an opportunity to incorporate a large number of quantum wells without increasing the mode volume.
SK. Shaid-Ur Rahman +4 more
doaj +1 more source
Journal of Telecommunications and Information Technology, 2001 Recent and encouraging developments in Schot- tky and MOS gated Si/SiGe field effect transistors are sur- veyed. Circuit applications are now beginning to be investi- gated.
Terrence E. Whall , Evan H. C. Parker
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