Results 51 to 60 of about 6,729 (212)

Influence of Backside Surface and Subsurface Damage in Gallium Nitride Wafers on Facet Quality and Violet‐Emitting Laser Diode Performance

physica status solidi (a), Volume 223, Issue 14, 22 July 2026.
Backside thinning techniques critically influence GaN laser performance. Compared to lapping, grinding reduces subsurface damage depth fivefold and lowers wafer bow, while mechanical polishing eliminates subsurface damage entirely. These improvements directly translate to smoother cleaved facets and a nearly 40% reduction in laser threshold current ...
S. Makhladi, J. Enslin, C. Netzel, E. Freier, M. Guttmann, M. Friedler, S. Einfeldt   +6 more
wiley   +1 more source

Impact of Polarization Charges on Threshold Voltage and Band Offset in AlGaN/GaN Heterostructures

physica status solidi (a), Volume 223, Issue 7, 7 April 2026.
The threshold voltage for the two‐dimensional electron gas of GaN‐based heterostructures is analyzed by considering the thickness of the polarization charge region at a semiconductor surface and interface. The proposed model gives the threshold voltage agreed with experimental results.
Tetsuya Suemitsu, Hiroki Imabayashi, Kenji Shiojima   +2 more
wiley   +1 more source

Micro‐Transfer Printed Continuous‐Wave and Mode‐Locked Laser Integration at 800 nm on a Silicon Nitride Platform

Laser &Photonics Reviews, Volume 20, Issue 7, 6 April 2026.
A heterogeneous III‐V/SiN platform for lasers at 800 nm is realized using the micro‐transfer printing method. Efficient GaAs gain sections are directly butt‐coupled to SiN waveguides, enabling continuous‐wave and mode‐locked extended‐cavity lasers. The mode‐locked lasers generate highly stable pulse trains with repetition rates up to 9.2 GHz and a ...
Max Kiewiet, Stijn Cuyvers, Maximilien Billet, Konstantinos Akritidis, Valeria Bonito Oliva, Gaudhaman Jeevanandam, Sandeep Saseendran, Manuel Reza, Pol Van Dorpe, Roelof Jansen, Joost Brouckaert, Günther Roelkens, Kasper Van Gasse, Bart Kuyken   +13 more
wiley   +1 more source

In-Situ Preparation of GaN Sacrificial Layers on Sapphire Substrate in MOVPE Reactor for Self-Separation of the Overgrown GaN Crystal

Crystals, 2020
GaN layers on sapphire substrates were prepared by using metal organic vapor phase epitaxy (MOVPE) combined with an in-situ H2 etching process for the purpose of later self-separation of thick GaN crystals produced by hydride vapor phase epitaxy (HVPE ...
Sepideh Faraji, Elke Meissner, Roland Weingärtner, Sven Besendörfer, Jochen Friedrich   +4 more
doaj   +1 more source

The Effect of Interface Diffusion on Raman Spectra of Wurtzite Short-Period GaN/AlN Superlattices

Nanomaterials, 2021
We present an extensive theoretical and experimental study to identify the effect on the Raman spectrum due to interface interdiffusion between GaN and AlN layers in short-period GaN/AlN superlattices (SLs).
Valery Davydov, Evgenii M. Roginskii, Yuri Kitaev, Alexander Smirnov, Ilya Eliseyev, Eugene Zavarin, Wsevolod Lundin, Dmitrii Nechaev, Valentin Jmerik, Mikhail Smirnov, Markus Pristovsek, Tatiana Shubina   +11 more
doaj   +1 more source

MOVPE for production scale manufacturing

III-Vs Review, 1997
AbstractIn the last four to five years MOVPE technology has very definitely moved out of the laboratory and onto the production floor. From being a technology confined to research and at best used commercially in the form of “home-made” installations in industry, it has emerged as a highly efficient tool sought after by the world's leading ...
O'Connell, S., Hoevel, R., Deschler, M., Juergensen, H.   +3 more
openaire   +1 more source

Structural Properties of Ion‐Implanted GaP:N: Effects of Nitrogen Incorporation and Post‐Implantation Annealing

physica status solidi (b), Volume 263, Issue 4, April 2026.
In this study, the structural properties of ion‐implanted GaP:N alloys with different nitrogen contents are analyzed before and after annealing. The results show lattice expansion with increasing N concentration due to implantation‐induced N–P split interstitials, unlike epitaxial GaPN. Annealing reduces distortion, demonstrating ion implantation as an
Md. Mamun‐Or‐Rashid, Shuhei Yagi, Hiroyuki Yaguchi   +2 more
wiley   +1 more source

In‐Plane Targeted Positioning of Silica‐Coated PbS Quantum Dots Based on Size Differences

Advanced Quantum Technologies, Volume 9, Issue 4, April 2026.
We demonstrate size‐selective placement of colloidal quantum dots (CQDs) with silica shells of different thicknesses by using a nanohole Si template. CQDs can act as single photon sources and absorbers. The silica shell thickness can be controlled independently of CQD energy states.
Hiroto Shirozume, Kohei Iwata, Aoi Nagase, Kohki Mukai   +3 more
wiley   +1 more source

Quantum Emitters in Hexagonal Boron Nitride: Principles, Engineering and Applications

Advanced Functional Materials, Volume 36, Issue 20, 9 March 2026.
Quantum emitters in hexagonal boron nitride have emerged as a promising candidate for quantum information science. This review examines the fundamentals of these quantum emitters, including their level structures, defect engineering, and their possible chemical structures.
Thi Ngoc Anh Mai, Md Shakhawath Hossain, Nhat Minh Nguyen, Yongliang Chen, Chaohao Chen, Xiaoxue Xu, Quang Thang Trinh, Toan Dinh, Toan Trong Tran   +8 more
wiley   +1 more source

Spectroscopic Characterization of GaAs and AlxGa1 – xAs / AlyGa1 – yAs Quantum Well Heterostructures [PDF]

Журнал нано- та електронної фізики, 2013
This work presents the results of the characterization of GaAs and AlxGa1 – xAs / AlyGa1 – yAs quantum well hetero-structures growth by MOVPE system. The main goal is to explore the ability of characterization techniques for multilayer structures like ...
Mirgender Kumar, V.P. Singh
doaj