Results 51 to 60 of about 5,528 (229)

Deterministic hBN Bubbles as a Versatile Platform for Studies on Single‐Photon Emitters

Advanced Functional Materials, Volume 36, Issue 24, 23 March 2026.
Single‐photon emitters (SPEs) in hBN are promising for quantum technologies; however, in exfoliated samples their activation is required, limiting reproducibility of previous studies. This work introduces a large‐area MOVPE‐grown hBN platform that hosts SPEs without prior activation.
Piotr Tatarczak, Tomasz Fąs, Jan Pawłowski, Aleksandra Krystyna Dąbrowska, Jan Suffczyński, Mateusz Tokarczyk, Piotr Wróbel, Andrzej Wysmołek, Johannes Binder   +8 more
wiley   +1 more source

Power P-HEMT realization on MOVPE structures [PDF]

, 1994
The paper presents the fabrication of power P-HEMTs on epitaxial structures grown by low pressure MOVPE technology featuring a Si planar doped (? doped) A0.22GaAs supply layer.
Pansini, E., Vidimari, F., Di Paola, A., Parravicini, S., Germagnoli, A., Ritchie, D., Tromby, M., Di Egidio, M., Caligiore, A., Grassi, E.   +9 more
core   +1 more source

Vacancy‐Type Defects in n‐Type GaN Fabricated by Low‐Dose Ion Implantation Studied by a Monoenergetic Positron Beam

physica status solidi (b), Volume 263, Issue 3, March 2026.
Vacancies in low‐dose ion‐implanted GaN are studied by positron annihilation. Depth profiles of the net donor concentration (ND) are close to those for implanted impurities, but ND is 2–3 times higher than concentrations of implanted ions. The origin of donor‐like defects is expected to be N‐vacancy‐related defects, and Ga‐vacancy‐type defects play a ...
Akira Uedono, Hiroko Iguchi, Masahiro Horita, Jun Suda, Kohei Shima, Shigefusa F. Chichibu, Shoji Ishibashi   +6 more
wiley   +1 more source

In-Situ Preparation of GaN Sacrificial Layers on Sapphire Substrate in MOVPE Reactor for Self-Separation of the Overgrown GaN Crystal

Crystals, 2020
GaN layers on sapphire substrates were prepared by using metal organic vapor phase epitaxy (MOVPE) combined with an in-situ H2 etching process for the purpose of later self-separation of thick GaN crystals produced by hydride vapor phase epitaxy (HVPE ...
Sepideh Faraji, Elke Meissner, Roland Weingärtner, Sven Besendörfer, Jochen Friedrich   +4 more
doaj   +1 more source

High‐Temperature Operation of All‐Molecular Beam Epitaxy InAs/GaAs Quantum Dot Lasers on V‐Grooved Si (001)

physica status solidi (a), Volume 223, Issue 4, 24 February 2026.
We demonstrate thermally reliable all‐MBE InAs/GaAs quantum dot lasers directly grown on V‐grooved Si (001). By preventing V‐groove deformation and eliminating micro‐cracks, the device achieves a maximum pulsed operating temperature of 150°C. This establishes a robust, scalable platform for monolithic Si photonics.
Jun Li, Haotian Zeng, Lifeng Bao, Jae‐Seong Park, Chong Chen, Yangqian Wang, Hexing Wang, Kongming Liu, Yutong Zhang, Makhayeni Mtunzi, Huiwen Deng, Hui Jia, Frederic Gardes, Jeremy Moeyaert, Thierry Baron, Mingchu Tang, Alwyn Seeds, Huiyun Liu   +17 more
wiley   +1 more source

Wafer‐Scale Synthesis of Mithrene and its Application in UV Photodetectors

Advanced Functional Materials, Volume 36, Issue 15, 19 February 2026.
A controlled tarnishing step on the silver surface precedes the solid‐vapor‐phase chemical transformation into silver phenylselenolate thin films. The approach yields crystals exceeding 1 µm with improved in‐plane orientation. Integration on graphene phototransistors demonstrates high photoresponsivity, positioning mithrene as a promising material for ...
Maryam Mohammadi, Stefanie L. Stoll, Analía F. Herrero, Sana Khan, Federico Fabrizi, Christian Gollwitzer, Zhenxing Wang, Surendra B. Anantharaman, Max C. Lemme   +8 more
wiley   +1 more source

Robust Reaction-Transport Models of Movpe Reactors

, 1997
A simple gas-phase and surface kinetic model describing the Metalorganic Vapor Phase Epitaxy (MOVPE) of GaAs from trimethyl-gallium (TMG) and arsine has been extracted from reported reaction mechanisms through sensitivity analysis. This model was coupled
H. K. Moffat, T. J. Mountziaris, C. Theodoropoulos   +2 more
core   +1 more source

MOVPE for production scale manufacturing

III-Vs Review, 1997
AbstractIn the last four to five years MOVPE technology has very definitely moved out of the laboratory and onto the production floor. From being a technology confined to research and at best used commercially in the form of “home-made” installations in industry, it has emerged as a highly efficient tool sought after by the world's leading ...
O'Connell, S., Hoevel, R., Deschler, M., Juergensen, H.   +3 more
openaire   +1 more source

Multimodal Imaging of Strain and Light Emission of Core–Shell InGaN/GaN Wires under a Sub‐Micrometer Polychromatic X‐Ray Probe

Advanced Materials Interfaces, Volume 13, Issue 4, 17 February 2026.
Micro‐Laue diffraction and excited optical X‐ray luminescence are used to study InGaN/GaN core‐shell wires on the BM32 beamline at the European Synchrotron. Multimodal imaging of X‐ray fluorescence, deviatoric strain tensors and optical emissions is performed using simultaneous mapping.
Beatriz de Goes Foschiani, Sergio Bongiorno, Odile Robach, Olivier Ulrich, Jean‐Sébastien Micha, Joël Eymery   +5 more
wiley   +1 more source

Using Bayesian Optimization to Increase the Efficiency of III‐V Multijunction Solar Cells

Advanced Theory and Simulations, Volume 9, Issue 2, February 2026.
Technology Computer Aided Design (TCAD) modeling is crucial for designing complex optoelectronic devices like III‐V multijunction solar cells. Bayesian optimization is proposed as a robust method to address challenges in optimizing costly black‐box TCAD solvers.
Pablo F. Palacios, Carlos Algora
wiley   +1 more source