Results 51 to 60 of about 11,730 (206)

Micro‐Transfer Printed Continuous‐Wave and Mode‐Locked Laser Integration at 800 nm on a Silicon Nitride Platform

Laser &Photonics Reviews, Volume 20, Issue 7, 6 April 2026.
A heterogeneous III‐V/SiN platform for lasers at 800 nm is realized using the micro‐transfer printing method. Efficient GaAs gain sections are directly butt‐coupled to SiN waveguides, enabling continuous‐wave and mode‐locked extended‐cavity lasers. The mode‐locked lasers generate highly stable pulse trains with repetition rates up to 9.2 GHz and a ...
Max Kiewiet, Stijn Cuyvers, Maximilien Billet, Konstantinos Akritidis, Valeria Bonito Oliva, Gaudhaman Jeevanandam, Sandeep Saseendran, Manuel Reza, Pol Van Dorpe, Roelof Jansen, Joost Brouckaert, Günther Roelkens, Kasper Van Gasse, Bart Kuyken   +13 more
wiley   +1 more source

Superlattice Structure of Quantum Cascade Lasers: Structural and Morphological Effects of AsH₃ Flow

Cumhuriyet Science Journal
The quantum cascade lasers (QCLs) have been widely used in mid-infrared applications due to their high power, efficiency, and design flexibility. The InP-based quantum cascade lasers, particularly those utilizing In 0.53 Ga 0.47 As/In0.52Al0.48As ...
Merve Nur Koçak, İlkay Demir
doaj   +1 more source

A monolithic MQW InP-InGaAsP-Based optical comb generator [PDF]

, 2007
We report the first demonstration of a monolithic optical-frequency comb generator. The device is based on multi-section quaternary/quaternary eight-quantum-well InP-InGaAsP material in a frequency-modulated (FM) laser design. The modulation is generated
Cannard, P, Cole, S, Gregoire, S, Gwilliam, R, Lealman, I, Moore, R, Pantouvaki, M, Renaud, CC, Seeds, AJ   +8 more
core   +1 more source

Structural Properties of Ion‐Implanted GaP:N: Effects of Nitrogen Incorporation and Post‐Implantation Annealing

physica status solidi (b), Volume 263, Issue 4, April 2026.
In this study, the structural properties of ion‐implanted GaP:N alloys with different nitrogen contents are analyzed before and after annealing. The results show lattice expansion with increasing N concentration due to implantation‐induced N–P split interstitials, unlike epitaxial GaPN. Annealing reduces distortion, demonstrating ion implantation as an
Md. Mamun‐Or‐Rashid, Shuhei Yagi, Hiroyuki Yaguchi   +2 more
wiley   +1 more source

Development of Sandwich AlN on PSS via Layered V/III Ratio Optimization

Cumhuriyet Science Journal
This study presents a comprehensive investigation into the effects of layer-by-layer V/III ratio optimization on the structural, optical, and morphological properties of AlN films grown on patterned sapphire substrates (PSS) using the PALE technique.
Ferhan Kübra Özbakır, İsmail Altuntas   +1 more
doaj   +1 more source

In‐Plane Targeted Positioning of Silica‐Coated PbS Quantum Dots Based on Size Differences

Advanced Quantum Technologies, Volume 9, Issue 4, April 2026.
We demonstrate size‐selective placement of colloidal quantum dots (CQDs) with silica shells of different thicknesses by using a nanohole Si template. CQDs can act as single photon sources and absorbers. The silica shell thickness can be controlled independently of CQD energy states.
Hiroto Shirozume, Kohei Iwata, Aoi Nagase, Kohki Mukai   +3 more
wiley   +1 more source

Thermally Conductive Buried Aluminum Nitride for Next Generation Silicon‐on‐Insulator

Advanced Electronic Materials
Silicon‐on‐insulator (SOI) substrates suffer from heat‐confinement and self‐heating effects due to silicon dioxide's low thermal conductivity. Polycrystalline Aluminum nitride (AlN) films can be a good replacement for effective heat dissipation while ...
Josef Stevanus Matondang, Nikhilendu Tiwary, Glenn Ross, Mervi Paulasto‐Kröckel   +3 more
doaj   +1 more source

Growth of N-Polar (000$\stackrel{-}{1}$) GaN in Metal–Organic Vapour Phase Epitaxy on Sapphire

Crystals, 2023
We have systematically studied the growth of N-polar GaN on sapphire in metal–organic vapor phase epitaxy (MOVPE) on different misoriented (0001) sapphire substrates.
Markus Pristovsek, Itsuki Furuhashi, Pietro Pampili   +2 more
doaj   +1 more source

Low-Threshold Electrically Pumps Vertical-Cavity Surface-Emitting Microlasers [PDF]

, 1989
Vertical-cavity electrically driven lasers with three GaInAs quantum wells and diameters of several μm exhibit room-temperature pulsed current thresholds as low as 1.3mA with 958 nm output ...
Florez, L. T., Harbison, J. P., Jewell, J. L., Lee, Y. H., McCall, S. L., Scherer, A., Walker, S.   +6 more
core  

Performance analysis of AlGaAs/GaAs tunnel junctions for ultra-high concentration photovoltaics [PDF]

, 2012
An n(++)-GaAs/p(++)-AlGaAs tunnel junction with a peak current density of 10 100Acm(-2) is developed. This device is a tunnel junction for multijunction solar cells, grown lattice-matched on standard GaAs or Ge substrates, with the highest peak current ...
, Algora C, Algora C, Bedair S M Roberts J C Jung D, Bertness K A Friedman D J Olson J M, Bett A W Burger B Dimroth F Siefer G Lerchenmüller H, C Algora, Chiu P Wojtczuk S Zhang X Harris C Pulver D Timmons M, I García, I Rey-Stolle, Jandieri K, King R R, Sze S M, Álvarez J L Hernández M Benítez P Miñano J C   +13 more
core   +2 more sources