Results 51 to 60 of about 7,044 (217)

Device Simulation of Hole Transport in 233 nm Multiquantum Well AlGaN‐Based UV LED

physica status solidi (a), Volume 223, Issue 17, 9 September 2026.
Deep‐UV LEDs suffer from low hole injection efficiency. In this work, electro optical simulations of AlGaN DUV LEDs with 6, 12, and 21 quantum wells, emitting at 233 nm, reveal efficient inter‐well hole transport within the active multiple quantum well region. The data are consistent with experimental findings.
Ibrahim Marouf, Friedhard Römer, Marcel Schilling, Franz Biebler, Jakob Höpfner, Massimo Grigoletto, Tim Wernicke, Michael Kneissl, Bernd Witzigmann   +8 more
wiley   +1 more source

Very high purity InP layers grown by adduct-MOVPE

, 2022
S.691-2Using the adduct compound trimethylindium-trimethylphosphine (TMIn-TMP) very high purity InP layers have been grown by atmospheric pressure MOVPE (AP-MOVPE).
Schumann, H., Reier, F.W., Wolfram, P., Franke, D.   +3 more
core  

Influence of the Epitaxial Growth Conditions of the Active Region on the Performance of Far‐Ultraviolet‐C Light‐Emitting Diodes

physica status solidi (a), Volume 223, Issue 17, 9 September 2026.
Far‐ultraviolet‐C light‐emitting diodes emitting at emission wavelengths of 226 or 233 nm with active regions epitaxially grown under different conditions are compared regarding their emission power, operation voltage, and lifetime. Based on these optimizations, 226 nm LEDs with an L70 lifetime larger than 250 h and an initial emission power of more ...
Tim Kolbe, Sylvia Hagedorn, Jens Rass, Hyun Kyong Cho, Jan Ruschel, Sven Einfeldt, Markus Weyers   +6 more
wiley   +1 more source

MOVPE for production scale manufacturing

III-Vs Review, 1997
AbstractIn the last four to five years MOVPE technology has very definitely moved out of the laboratory and onto the production floor. From being a technology confined to research and at best used commercially in the form of “home-made” installations in industry, it has emerged as a highly efficient tool sought after by the world's leading ...
O'Connell, S., Hoevel, R., Deschler, M., Juergensen, H.   +3 more
openaire   +1 more source

Band Alignment and Composition of the Buried TiO2/GaInP Interface

Advanced Materials Interfaces, Volume 13, Issue 16, 18 August 2026.
Buried TiO2$\text{TiO}_2$/GaInP interfaces formed by mild plasma‐enhanced ALD are shown to be largely insensitive to the initial GaInP surface condition. Angle‐dependent photoelectron spectroscopy reveals similar interfacial chemistry and band alignment for phosphorus‐rich and naturally oxidized surfaces, demonstrating a robust pathway for reproducible
David Ostheimer, Sahar Shekarabi, Julius Kühne, Mohammad Amin Zare Pour, Kai Daniel Hanke, Chris Yannic Bohlemann, Juliane Koch, Oliver Bienek, Agnieszka Paszuk, Wolfram Jaegermann, Ian D. Sharp, Thomas Hannappel   +11 more
wiley   +1 more source

In-Situ Preparation of GaN Sacrificial Layers on Sapphire Substrate in MOVPE Reactor for Self-Separation of the Overgrown GaN Crystal

Crystals, 2020
GaN layers on sapphire substrates were prepared by using metal organic vapor phase epitaxy (MOVPE) combined with an in-situ H2 etching process for the purpose of later self-separation of thick GaN crystals produced by hydride vapor phase epitaxy (HVPE ...
Sepideh Faraji, Elke Meissner, Roland Weingärtner, Sven Besendörfer, Jochen Friedrich   +4 more
doaj   +1 more source

Phonon Polariton Confinement in Isotopically Pure MOVPE‐Grown BN Triangles

Advanced Optical Materials, Volume 14, Issue 31, August 21, 2026.
Phonon polaritons are confined in MOVPE‐grown isotopically pure 10BN$^{10}{\rm BN}$ triangles. The resonator modes are excited and mapped by near‐field spectroscopy. Through scanning a wide infrared frequency range and modeling, the polariton dispersion relation is retrieved.
Maximilian Scharpey, Oskar Schröer, Daniel Wigger, Lena Miler, Jakub Iwański, Andrzej Wysmołek, Johannes Binder, Iris Niehues   +7 more
wiley   +1 more source

MOVPE growth of long wavelength AlGaAsSb∕InP Bragg mirrors

, 2004
International audienceMonolithic Distributed Bragg reflectors (DBRs) consisting of AlGaAsSb/InP quarterwave multilayer were grown by Metal-Organic Vapor-Phase Epitaxy (MOVPE) on InP substrates.
Haiml, M., Gini, E., Almuneau, Guilhem, Bächtold, W., Ostinelli, O., Ebnöther, M.   +5 more
core   +1 more source

Influence of Backside Surface and Subsurface Damage in Gallium Nitride Wafers on Facet Quality and Violet‐Emitting Laser Diode Performance

physica status solidi (a), Volume 223, Issue 14, 22 July 2026.
Backside thinning techniques critically influence GaN laser performance. Compared to lapping, grinding reduces subsurface damage depth fivefold and lowers wafer bow, while mechanical polishing eliminates subsurface damage entirely. These improvements directly translate to smoother cleaved facets and a nearly 40% reduction in laser threshold current ...
S. Makhladi, J. Enslin, C. Netzel, E. Freier, M. Guttmann, M. Friedler, S. Einfeldt   +6 more
wiley   +1 more source

Impact of Polarization Charges on Threshold Voltage and Band Offset in AlGaN/GaN Heterostructures

physica status solidi (a), Volume 223, Issue 7, 7 April 2026.
The threshold voltage for the two‐dimensional electron gas of GaN‐based heterostructures is analyzed by considering the thickness of the polarization charge region at a semiconductor surface and interface. The proposed model gives the threshold voltage agreed with experimental results.
Tetsuya Suemitsu, Hiroki Imabayashi, Kenji Shiojima   +2 more
wiley   +1 more source