Results 71 to 80 of about 7,044 (217)

Selective Area Growth InGaAsP by MOVPE

, 2003
The wide stripe (ISjum) selective area growth (SAG) of InGaAsP by low pressure MOVPE is systematically investigated. The characteristics of the growth ratios,thickness enhancement factors .bandgap modulation,and composition modulation vary with the ...
Dong Jie, Qiu Weibin, Zhou Fan, Wang Wei
core  

Growth of one-dimensional nanostructures in MOVPE

, 2004
The use of metal organic vapor-phase epitaxy (MOVPE) for growth of one-dimensional nanostructures in the material systems GaAs, GaP, InAs and InP is investigated.
Svensson, C Patrik T, Mårtensson, Thomas,, Wallenberg, Reine,, Johansson, Jonas, Dick Thelander, Kimberly, Larsson, Magnus,, Wacaser, Brent, Samuelson, Lars,, Dick Thelander, Kimberly,, Borgström, Magnus,, Sköld, Niklas,, Wacaser, Brent,, Wallenberg, Reine, Deppert, Knut,, Seifert, Werner, Deppert, Knut, Mårtensson, Thomas, Borgström, Magnus, Samuelson, Lars, Johansson, Jonas,, Lund University., Sköld, Niklas, Seifert, Werner,, Larsson, Magnus   +23 more
core   +1 more source

Composition and Resulting Band Alignment at the TiO2/InP Heterointerface: A Fundamental Study Combining Photoemission Spectroscopy and Theory

Advanced Functional Materials, Volume 36, Issue 21, 12 March 2026.
The chemical composition and band alignment are systematically investigated at the TiO2/InP heterointerface. Thin TiO2 films are deposited by ALD on atomically ordered, P‐terminated p‐InP(100). By combining UPS, XPS, and ab initio molecular dynamics, the atomistic structure and electronic alignment are revealed.
Mohammad Amin Zare Pour, Muhammad Nawaz Qaisrani, Christian Höhn, Johannes Laurenz Wolf, Negin Mogharehabed, Jennifer Velazquez Rojas, Wolfram Jaegermann, Erich Runge, Roel van de Krol, Thomas Hannappel, Christian Dreßler, Agnieszka Paszuk   +11 more
wiley   +1 more source

Revealing polytypism in 2D boron nitride with UV photoluminescence

npj 2D Materials and Applications
Boron nitride exhibits various crystal structures. The subgroup of layered boron nitrides includes several polytypes such as hexagonal (hBN), Bernal (bBN), and rhombohedral (rBN) BN.
Jakub Iwański, Krzysztof P. Korona, Mateusz Tokarczyk, Grzegorz Kowalski, Aleksandra K. Dąbrowska, Piotr Tatarczak, Izabela Rogala, Marta Bilska, Maciej Wójcik, Sławomir Kret, Anna Reszka, Bogdan J. Kowalski, Song Li, Anton Pershin, Adam Gali, Johannes Binder, Andrzej Wysmołek   +16 more
doaj   +1 more source

MOVPE gets green signal

III-Vs Review, 1998
AbstractGetter purified nitrogen carrier gas has become well established for LP-MOVPE in the last three years. With green nitrogen bottles (or a liquid nitrogen source) gradually replacing red hydrogen bottles in MOVPE laboratories, this article highlights the history and development of the new process and demonstrates its suitability for the growth of
Hardtdegen, Hilde, Giannolés, Paulos
openaire   +1 more source

Deterministic hBN Bubbles as a Versatile Platform for Studies on Single‐Photon Emitters

Advanced Functional Materials, Volume 36, Issue 24, 23 March 2026.
Single‐photon emitters (SPEs) in hBN are promising for quantum technologies; however, in exfoliated samples their activation is required, limiting reproducibility of previous studies. This work introduces a large‐area MOVPE‐grown hBN platform that hosts SPEs without prior activation.
Piotr Tatarczak, Tomasz Fąs, Jan Pawłowski, Aleksandra Krystyna Dąbrowska, Jan Suffczyński, Mateusz Tokarczyk, Piotr Wróbel, Andrzej Wysmołek, Johannes Binder   +8 more
wiley   +1 more source

All MOVPE Grown Quadruple Junction InGaP/InGaAs/Ge/Ge Solar Cell

Crystals
Most commercially available InGaP/InGaAs/Ge triple-junction solar cells suffer from current mismatch due to the excess current generated by the Ge sub-cell.
Gianluca Timò, Marco Calicchio, Elisabetta Achilli, Nicola Armani, Filippo Annoni, Franco Trespidi, Mario V. Imperatore, Edoardo Celi, Alessandro Minuto   +8 more
doaj   +1 more source

InP的MOVPE生长

, 1996
利用常压MOVPE设备和国产的三甲基铟以及进口的磷烷生长了InP处延材料,其77K迁移 率为65300cm~2/V·s ...
陆大成, 王晓晖, 董建荣, 汪度, 刘祥林   +4 more
core  

Growth of InN films and nanostructures by MOVPE

, 2008
International audienceSince a few years, a lot of research efforts have been devoted to InN, the least known of the semiconducting group-III nitrides.
Succi, Marco, Leese, T., Gil, Bernard, Giesen, Christoph, Rushworth, Simon, Briot, Olivier, Ruffenach, Sandra, Moret, Matthieu, Heuken, Michael   +8 more
core   +1 more source

Selective Area Growth of GaN by MOVPE and HVPE

, 1997
Recent successful results on the selective area growth (SAG) of GaN that has been done by MOVPE and HVPE are shown. The SAG were carried out on MOVPE-grown GaN (0001) / sapphire substrates with lined or dotted SiO2 masks.
N. Sawaki, H. Matsushima, K. Hiramatsu, Y. Ohuchi, Y. Honda, K. Tadatomo, T. Shibata, H. Okagawa, T. Matsue   +8 more
core   +1 more source