Results 71 to 80 of about 6,729 (212)

Revealing polytypism in 2D boron nitride with UV photoluminescence

npj 2D Materials and Applications
Boron nitride exhibits various crystal structures. The subgroup of layered boron nitrides includes several polytypes such as hexagonal (hBN), Bernal (bBN), and rhombohedral (rBN) BN.
Jakub Iwański, Krzysztof P. Korona, Mateusz Tokarczyk, Grzegorz Kowalski, Aleksandra K. Dąbrowska, Piotr Tatarczak, Izabela Rogala, Marta Bilska, Maciej Wójcik, Sławomir Kret, Anna Reszka, Bogdan J. Kowalski, Song Li, Anton Pershin, Adam Gali, Johannes Binder, Andrzej Wysmołek   +16 more
doaj   +1 more source

Fabrication of Semiconductor Nanowires for Electronic Transport Measurements

CHIMIA, 2006
We report on epitaxial growth of InAs nanowires and the steps necessary to create devices for electrnic transport experiments. Growth conditions were found by the use of metal organic vapor phase epitaxy (MOVPE) resulting in nanowires with ...
Andreas Pfund, Ivan Shorubalko, Renaud Leturcq, Magnus T. Borgström, Fabian Gramm, Elisabeth Müller, Klaus Ensslin   +6 more
doaj   +1 more source

Simulation of Nitride Semiconductor MOVPE

, 2020
This article seeks to help readers understand the MOVPE growth of nitride semiconductors as a part of science. MOVPE is the abbreviation for metalorganic vapor-phase epitaxy. Therefore, the precursors used are metalorganic gases and ammonia.
Ohkawa, Kazuhiro, Kazuhiro Ohkawa
core   +1 more source

Wafer‐Scale Synthesis of Mithrene and its Application in UV Photodetectors

Advanced Functional Materials, Volume 36, Issue 15, 19 February 2026.
A controlled tarnishing step on the silver surface precedes the solid‐vapor‐phase chemical transformation into silver phenylselenolate thin films. The approach yields crystals exceeding 1 µm with improved in‐plane orientation. Integration on graphene phototransistors demonstrates high photoresponsivity, positioning mithrene as a promising material for ...
Maryam Mohammadi, Stefanie L. Stoll, Analía F. Herrero, Sana Khan, Federico Fabrizi, Christian Gollwitzer, Zhenxing Wang, Surendra B. Anantharaman, Max C. Lemme   +8 more
wiley   +1 more source

Power P-HEMT realization on MOVPE structures [PDF]

, 1994
The paper presents the fabrication of power P-HEMTs on epitaxial structures grown by low pressure MOVPE technology featuring a Si planar doped (? doped) A0.22GaAs supply layer.
Pansini, E., Vidimari, F., Di Paola, A., Parravicini, S., Germagnoli, A., Ritchie, D., Tromby, M., Di Egidio, M., Caligiore, A., Grassi, E.   +9 more
core   +1 more source

Multimodal Imaging of Strain and Light Emission of Core–Shell InGaN/GaN Wires under a Sub‐Micrometer Polychromatic X‐Ray Probe

Advanced Materials Interfaces, Volume 13, Issue 4, 17 February 2026.
Micro‐Laue diffraction and excited optical X‐ray luminescence are used to study InGaN/GaN core‐shell wires on the BM32 beamline at the European Synchrotron. Multimodal imaging of X‐ray fluorescence, deviatoric strain tensors and optical emissions is performed using simultaneous mapping.
Beatriz de Goes Foschiani, Sergio Bongiorno, Odile Robach, Olivier Ulrich, Jean‐Sébastien Micha, Joël Eymery   +5 more
wiley   +1 more source

All MOVPE Grown Quadruple Junction InGaP/InGaAs/Ge/Ge Solar Cell

Crystals
Most commercially available InGaP/InGaAs/Ge triple-junction solar cells suffer from current mismatch due to the excess current generated by the Ge sub-cell.
Gianluca Timò, Marco Calicchio, Elisabetta Achilli, Nicola Armani, Filippo Annoni, Franco Trespidi, Mario V. Imperatore, Edoardo Celi, Alessandro Minuto   +8 more
doaj   +1 more source

Significant Carrier Extraction Enhancement at the Interface of an InN/p-GaN Heterojunction under Reverse Bias Voltage

Nanomaterials, 2018
In this paper, a superior-quality InN/p-GaN interface grown using pulsed metalorganic vapor-phase epitaxy (MOVPE) is demonstrated. The InN/p-GaN heterojunction interface based on high-quality InN (electron concentration 5.19 × 1018 cm−3 and ...
Vladimir Svrcek, Marek Kolenda, Arunas Kadys, Ignas Reklaitis, Darius Dobrovolskas, Tadas Malinauskas, Mickael Lozach, Davide Mariotti, Martin Strassburg, Roland Tomašiūnas   +9 more
doaj   +1 more source

InP的MOVPE生长

, 1996
利用常压MOVPE设备和国产的三甲基铟以及进口的磷烷生长了InP处延材料,其77K迁移 率为65300cm~2/V·s ...
陆大成, 王晓晖, 董建荣, 汪度, 刘祥林   +4 more
core  

Tuning emission energy and fine structure splitting in quantum dots emitting in the telecom O-band

AIP Advances, 2019
We report on optical investigations of MOVPE-grown InGaAs/GaAs quantum dots emitting at the telecom O-band that were integrated onto uniaxial piezoelectric actuators. This promising technique, which does not degrade the emission brightness of the quantum
B. Höfer, F. Olbrich, J. Kettler, M. Paul, J. Höschele, M. Jetter, S. L. Portalupi, F. Ding, P. Michler, O. G. Schmidt   +9 more
doaj   +1 more source