Results 71 to 80 of about 5,528 (229)

Structural Characterization of Movpe Grown Algan/Gan for Hemt Formation

Reviews on Advanced Materials Science, 2018
Results on structural, compositional, optical and electrical characterization of MOVPE grown AlGaN/GaN heterostructures with focus on understanding how the AlN buffer synthesis affects the top films are reported.
Popok V.N., Aunsborg T.S., Godiksen R.H., Kristensen P.K., Juluri R.R., Caban P., Pedersen K.   +6 more
doaj   +1 more source

Fabrication of Semiconductor Nanowires for Electronic Transport Measurements

CHIMIA, 2006
We report on epitaxial growth of InAs nanowires and the steps necessary to create devices for electrnic transport experiments. Growth conditions were found by the use of metal organic vapor phase epitaxy (MOVPE) resulting in nanowires with ...
Andreas Pfund, Ivan Shorubalko, Renaud Leturcq, Magnus T. Borgström, Fabian Gramm, Elisabeth Müller, Klaus Ensslin   +6 more
doaj   +1 more source

Electron Channeling Contrast Imaging for the Characterization of Dislocations in III−V Thin Films on Silicon (001)

physica status solidi (a), Volume 223, Issue 2, January 2026.
Defect characterization plays a crucial role in semiconductor research, yet the development of fast, cheap, and nondestructive tools remains challenging. This work applies electron channeling contrast imaging (ECCI) to III–V thin films on silicon, examining beam parameters and diffraction conditions.
Laura Monge‐Bartolome, Paula Mouriño Miñambres, Alicia Peiro Codoñer, Miguel Sinusia Lozano, Zhao Yan, Ivan Garcia Vara, Thierry Baron, Qiang Li, Víctor J. Gómez   +8 more
wiley   +1 more source

In Situ 4D STEM of LiNiO2 Particles Heated in an Oxygen Atmosphere: Toward Investigation of Solid‐State Batteries Under Realistic Processing Conditions

Small Methods, Volume 10, Issue 2, 22 January 2026.
An experimental protocol, including sample preparation and experimental setup, for heating large, thinned cathode active material particles in situ in an oxygen atmosphere is presented. Using 4D scanning transmission electron microscopy nanobeam diffraction and ex situ measurements, the structural evolution of LiNiO2 during heating in oxygen is ...
Thomas Demuth, Shamail Ahmed, Philipp Kurzhals, Johannes Haust, Jürgen Belz, Andreas Beyer, Jürgen Janek, Kerstin Volz   +7 more
wiley   +1 more source

Atmospheric pressure metal-organic vapour phase epitaxy of InP, (GaIn)as, and (GaIn)(AsP) alloys [PDF]

, 1989
An introduction to optical communications and opto-electronic devices is given, which demonstrates the motivation for research into III/V devices, and materials.
Butler, Barry R., Butler, B.R
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All MOVPE Grown Quadruple Junction InGaP/InGaAs/Ge/Ge Solar Cell

Crystals
Most commercially available InGaP/InGaAs/Ge triple-junction solar cells suffer from current mismatch due to the excess current generated by the Ge sub-cell.
Gianluca Timò, Marco Calicchio, Elisabetta Achilli, Nicola Armani, Filippo Annoni, Franco Trespidi, Mario V. Imperatore, Edoardo Celi, Alessandro Minuto   +8 more
doaj   +1 more source

InP的MOVPE生长

, 1996
利用常压MOVPE设备和国产的三甲基铟以及进口的磷烷生长了InP处延材料,其77K迁移 率为65300cm~2/V·s ...
陆大成, 王晓晖, 董建荣, 汪度, 刘祥林   +4 more
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Significant Carrier Extraction Enhancement at the Interface of an InN/p-GaN Heterojunction under Reverse Bias Voltage

Nanomaterials, 2018
In this paper, a superior-quality InN/p-GaN interface grown using pulsed metalorganic vapor-phase epitaxy (MOVPE) is demonstrated. The InN/p-GaN heterojunction interface based on high-quality InN (electron concentration 5.19 × 1018 cm−3 and ...
Vladimir Svrcek, Marek Kolenda, Arunas Kadys, Ignas Reklaitis, Darius Dobrovolskas, Tadas Malinauskas, Mickael Lozach, Davide Mariotti, Martin Strassburg, Roland Tomašiūnas   +9 more
doaj   +1 more source

ZnO nanorod heterostructures and nanodevices based on catalyst-free metalorganic vapor phase epitaxy

, 2005
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이규철
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MOVPE生长GaN的准热力学模型及其相图

, 1997
基于准热力学平衡模型对以TMGa和NH_3为源的MOVPE生长GaN的过程进行了分析,并在此基础上计算了MOVPE生长GaN的相图。Gan的MOVPE相图由GaN(s)单凝聚相区、GaN(s)+Ga(1)双凝聚相区、表面会形成Ga滴和不会形成Ga滴的两个腐蚀区构成。着重讨论了生长温度、反应室压力、载气组分、NH_3分解率和V ...
陆大成, 段树坤
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