Results 81 to 90 of about 11,730 (206)

Arsenic Diffusion in MOVPE‐Grown GaAs/Ge Epitaxial Structures

Advanced Electronic Materials
Germanium is reemerging as a prominent material in the semiconductor field, particularly for electronic applications, photonics, photovoltaics, and thermophotovoltaics.
V. Orejuela, E. García‐Tabares, I. Rey‐Stolle, I. García   +3 more
doaj   +1 more source

Basic Concepts and Interfacial Aspects of High-Efficiency III-V Multijunction Solar Cells

CHIMIA, 2007
Among various types of solar cells, MOVPE-grown triple-junction III-V compound semiconductors are today's most efficient photovoltaic devices with conversion efficiencies exceeding 40%.
B. Erol Sağol, Ulf Seidel, Nadine Szabó, Klaus Schwarzburg, Thomas Hannappel   +4 more
doaj   +1 more source

Optical Characterisation of MOVPE Grown Vertically Correlated InAs/GaAs Quantum Dots

, 2006
Structures with self-organised InAs quantum dots in a GaAs matrix were grown by the low pressure metal-organic vapour phase epitaxy (LP-MOVPE) technique.
Hazdra, P., Hospodkova, A., Hulicius, E., Kuldova, K., Oswald, J., Pangrac, J., Voves, J.   +6 more
core  

Double step structure and meandering due to the many body interaction at GaN(0001) surface in N-rich conditions

, 2010
Growth of gallium nitride on GaN(0001) surface is modeled by Monte Carlo method. Simulated growth is conducted in N-rich conditions, hence it is controlled by Ga atoms surface diffusion.
Bentley W. A., Filip Krzyżewski, Magdalena A. Załuska-Kotur, Stanisław Krukowski, Verma A. R.   +4 more
core   +1 more source

Anisotropic structural and optical properties of a-plane (11-20) AlInN nearly-lattice-matched to GaN [PDF]

, 2010
We report epitaxial growth of a-plane (11-20) AlInN layers nearly-lattice-matched to GaN. Unlike for c-plane oriented epilayers, a-plane Al_{1-x}In_{x}N cannot be simultaneously lattice-matched to GaN in both in-plane directions.
A.A. Rahman, A.P. Shah, Abdul Kadir, Ajagunna, Arnab Bhattacharya, Bhuiyan, Chierchia, Dietz, Jamil, Kadir, Kadir, Kadir, Kumagai, Lefebvre, Lu, M.R. Gokhale, Maleyre, Masihhur R. Laskar, Matsuoka, Nagai, Nirupam Hatui, Suihkonen, Takeuchi, Wu, Zhu   +24 more
core   +1 more source

Metastable Ordered Mesoporous h‐LuFeO3 Thin Films Prepared by Soft‐Templating: Optical, Electronic, and Magnetic Properties

Advanced Materials Interfaces, Volume 13, Issue 2, 20 January 2026.
An intriguing design concept for the preparation of metastable mesoporous h‐LuFeO3 thin films and powders by soft‐templating is presented. The hexagonal rather than the orthorhombic phase is formed due to the presence of a polymer structure‐directing agent in the synthesis.
Christian Suchomski, Christian Reitz, Vipin Kumar, Igor Djerdj, Marcus Einert, Torsten Brezesinski, Bernd Smarsly   +6 more
wiley   +1 more source

Bandgap and effective mass of epitaxial cadmium oxide [PDF]

, 2008
The bandgap and band-edge effective mass of single crystal cadmium oxide, epitaxially grown by metal-organic vapor-phase epitaxy, are determined from infrared reflectivity, ultraviolet/visible absorption, and Hall effect measurements.
C. F. McConville, Finkenrath H., J. Zúñiga–Pérez, P. D. C. King, P. H. Jefferson, S. A. Hatfield, T. D. Veal, V. Muñoz–Sanjosé   +7 more
core   +2 more sources

Exploring the Role of III‐V Semiconductor‐Based Nanowire Composition and Geometry on Photoelectrochemical Reactions

Advanced Energy and Sustainability Research, Volume 7, Issue 1, January 2026.
III‐V nanowires have shown great potential for use as electrodes in photoelectrochemical water splitting. It has been demonstrated that their durability and efficiency depend on their geometry and composition. All of those tested sustained H2 production for 2 h.
Juliane Koch, Chris Yannic Bohlemann, Sahar Shekarabi, David Ostheimer, Peter Kleinschmidt, Thomas Hannappel   +5 more
wiley   +1 more source

Structural Characterization of Movpe Grown Algan/Gan for Hemt Formation

Reviews on Advanced Materials Science, 2018
Results on structural, compositional, optical and electrical characterization of MOVPE grown AlGaN/GaN heterostructures with focus on understanding how the AlN buffer synthesis affects the top films are reported.
Popok V.N., Aunsborg T.S., Godiksen R.H., Kristensen P.K., Juluri R.R., Caban P., Pedersen K.   +6 more
doaj   +1 more source

Fabrication of Semiconductor Nanowires for Electronic Transport Measurements

CHIMIA, 2006
We report on epitaxial growth of InAs nanowires and the steps necessary to create devices for electrnic transport experiments. Growth conditions were found by the use of metal organic vapor phase epitaxy (MOVPE) resulting in nanowires with ...
Andreas Pfund, Ivan Shorubalko, Renaud Leturcq, Magnus T. Borgström, Fabian Gramm, Elisabeth Müller, Klaus Ensslin   +6 more
doaj   +1 more source