Results 81 to 90 of about 7,044 (217)
Atmospheric pressure metal-organic vapour phase epitaxy of InP, (GaIn)as, and (GaIn)(AsP) alloys [PDF]
, 1989 An introduction to optical communications and opto-electronic devices is given, which demonstrates the motivation for research into III/V devices, and materials.
Butler, Barry R., Butler, B.R
core
Tuning emission energy and fine structure splitting in quantum dots emitting in the telecom O-band
AIP Advances, 2019 We report on optical investigations of MOVPE-grown InGaAs/GaAs quantum dots emitting at the telecom O-band that were integrated onto uniaxial piezoelectric actuators. This promising technique, which does not degrade the emission brightness of the quantum
B. Höfer +9 more
doaj +1 more source
Nanomaterials, 2018 In this paper, a superior-quality InN/p-GaN interface grown using pulsed metalorganic vapor-phase epitaxy (MOVPE) is demonstrated. The InN/p-GaN heterojunction interface based on high-quality InN (electron concentration 5.19 × 1018 cm−3 and ...
Vladimir Svrcek +9 more
doaj +1 more source
Quasi-thermo dynamic analysis of MOVPE growth of GaxAlyIn1-x-yN
, 2002 A quasi-thermodynamic model of metalorganic vapor phase epitaxy (MOVPE) growth of GaxAlyIn1-x-yN alloys has been proposed. In view of the complex growth behavior of GaxAlyIn1-x-yN, we focus our attention on the galliumrich quaternary alloys that are ...
Lu DC +2 more
core
InAs/GaAs quantum-size structures grown by MOVPE
, 2002 Structures with quantum size objects as self-organised quantum dots, quantum rings, wires and quasi-quantum wells could be reproducibly grown by MOVPE.
Hospodková, Alice
core
Robust Reaction-Transport Models of Movpe Reactors
, 1997 A simple gas-phase and surface kinetic model describing the Metalorganic Vapor Phase Epitaxy (MOVPE) of GaAs from trimethyl-gallium (TMG) and arsine has been extracted from reported reaction mechanisms through sensitivity analysis. This model was coupled
H. K. Moffat +2 more
core +1 more source
Red light-emitting diode with full InGaN structure on a ScAlMgO4 substrate
Applied Physics ExpressHere, we report the first demonstration of a full InGaN-based red LED grown on a c -plane ScAlMgO _4 substrate. This work represents a potential approach for achieving red emissions from an InGaN quantum well grown on InGaN underlying layers.
Mohammed A. Najmi +6 more
doaj +1 more source
, 1996 Undoped and Zinc-doped GaN films have been grown using TMGa, DEZn and Ammonia by MOVPE. The GaN blue-green LEDs of m-i-n structure have been fabricated. They can be operated at forward bias less than 5 volts.
Liu XL, Lu DC, Lin LY, Wang D, Wang XH
core
Advanced Electronic MaterialsIn this work, the out‐diffusion and uphill‐diffusion of Mg inside (100) β‐Ga2O3 epilayers and substrates are reported. The Mg accumulates toward the (100) surface upon annealing under an oxidizing environment, whereas the concentration profile changes ...
Ta‐Shun Chou +10 more
doaj +1 more source
Phase diagrams for the MOVPE growth of ZnTe and ZnSeTe
, 1997 The phase diagrams for the MOVPE growth of ZnTe and ZnSeTe have been proposed for the first time, based on the thermodynamic equilibrium established at the solid-vapor interface, The regions for the single condensed phase of ZnTe(s) and of ZnSeTe(s) have
Duan SK +2 more
core