Results 81 to 90 of about 5,528 (229)
In-situ Transmissionselektronenmikroskopie des Kristallwachstums unter MOVPE-Bedingungen
, 2023 The presented work introduces in-situ (scanning) transmission electron microscopy ((S)TEM) using a closed gas cell and heating TEM holder as a new experimental approach to investigate crystal growth on an atomic scale under metal-organic vapor phase ...
Widemann, Maximilian
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Tuning emission energy and fine structure splitting in quantum dots emitting in the telecom O-band
AIP Advances, 2019 We report on optical investigations of MOVPE-grown InGaAs/GaAs quantum dots emitting at the telecom O-band that were integrated onto uniaxial piezoelectric actuators. This promising technique, which does not degrade the emission brightness of the quantum
B. Höfer +9 more
doaj +1 more source
Quasi-thermo dynamic analysis of MOVPE growth of GaxAlyIn1-x-yN
, 2002 A quasi-thermodynamic model of metalorganic vapor phase epitaxy (MOVPE) growth of GaxAlyIn1-x-yN alloys has been proposed. In view of the complex growth behavior of GaxAlyIn1-x-yN, we focus our attention on the galliumrich quaternary alloys that are ...
Lu DC +2 more
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, 1996 Undoped and Zinc-doped GaN films have been grown using TMGa, DEZn and Ammonia by MOVPE. The GaN blue-green LEDs of m-i-n structure have been fabricated. They can be operated at forward bias less than 5 volts.
Liu XL, Lu DC, Lin LY, Wang D, Wang XH
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Phase diagrams for the MOVPE growth of ZnTe and ZnSeTe
, 1997 The phase diagrams for the MOVPE growth of ZnTe and ZnSeTe have been proposed for the first time, based on the thermodynamic equilibrium established at the solid-vapor interface, The regions for the single condensed phase of ZnTe(s) and of ZnSeTe(s) have
Duan SK +2 more
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Red light-emitting diode with full InGaN structure on a ScAlMgO4 substrate
Applied Physics ExpressHere, we report the first demonstration of a full InGaN-based red LED grown on a c -plane ScAlMgO _4 substrate. This work represents a potential approach for achieving red emissions from an InGaN quantum well grown on InGaN underlying layers.
Mohammed A. Najmi +6 more
doaj +1 more source
GROWTH OF GASB AND GAASSB IN THE SINGLE-PHASE REGION BY MOVPE
, 1992 GaSb layers are grown on GaSb substrates; the effects of input partial pressure of trimethylantimony and the V/III ratio are studied. A model of the MOVPE phase diagram for the growth of GaSb and GaAsxSb1-x is developed which assumes thermodynamic ...
LU DC +4 more
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Advanced Electronic MaterialsIn this work, the out‐diffusion and uphill‐diffusion of Mg inside (100) β‐Ga2O3 epilayers and substrates are reported. The Mg accumulates toward the (100) surface upon annealing under an oxidizing environment, whereas the concentration profile changes ...
Ta‐Shun Chou +10 more
doaj +1 more source
Photonics, 2017 In this paper, we report on the experimental investigation of the thermal performance of lattice matched AlInAs/InGaAs/InP quantum cascade lasers. Investigated designs include double trench, single mesa, and buried heterostructures, which were grown by ...
Dorota Pierścińska +9 more
doaj +1 more source
OPTICAL AND STRUCTURAL-PROPERTIES OF AP-MOVPE GAINP/GAAS HETEROSTRUCTURES
, 1994 Lattice matched GaInP/GaAs heterostructures were grown by atmospheric pressure-metal organic vapor phase epitaxy (AP-MOVPE). Compositional intermixing of As/P and Ga/In near the heterointerfaces was studied by photoluminescence (PL) spectroscopy ...
HUANG BL +7 more
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