Results 81 to 90 of about 6,729 (212)

MOVPE生长GaN的准热力学模型及其相图

open access: yes, 1997
基于准热力学平衡模型对以TMGa和NH_3为源的MOVPE生长GaN的过程进行了分析,并在此基础上计算了MOVPE生长GaN的相图。Gan的MOVPE相图由GaN(s)单凝聚相区、GaN(s)+Ga(1)双凝聚相区、表面会形成Ga滴和不会形成Ga滴的两个腐蚀区构成。着重讨论了生长温度、反应室压力、载气组分、NH_3分解率和V ...
陆大成, 段树坤
core  

Quasi-thermo dynamic analysis of MOVPE growth of GaxAlyIn1-x-yN

open access: yes, 2002
A quasi-thermodynamic model of metalorganic vapor phase epitaxy (MOVPE) growth of GaxAlyIn1-x-yN alloys has been proposed. In view of the complex growth behavior of GaxAlyIn1-x-yN, we focus our attention on the galliumrich quaternary alloys that are ...
Lu DC   +2 more
core  

Red light-emitting diode with full InGaN structure on a ScAlMgO4 substrate

open access: yesApplied Physics Express
Here, we report the first demonstration of a full InGaN-based red LED grown on a c -plane ScAlMgO _4 substrate. This work represents a potential approach for achieving red emissions from an InGaN quantum well grown on InGaN underlying layers.
Mohammed A. Najmi   +6 more
doaj   +1 more source

GaN m-i-n LED grown by MOVPE

open access: yes, 1996
Undoped and Zinc-doped GaN films have been grown using TMGa, DEZn and Ammonia by MOVPE. The GaN blue-green LEDs of m-i-n structure have been fabricated. They can be operated at forward bias less than 5 volts.
Liu XL, Lu DC, Lin LY, Wang D, Wang XH
core  

Out‐Diffusion and Uphill‐Diffusion of Mg in Czochralski‐Grown (100) β‐Ga2O3 Under High‐Temperature Annealing and Its Influence on Lateral MOSFET Devices

open access: yesAdvanced Electronic Materials
In this work, the out‐diffusion and uphill‐diffusion of Mg inside (100) β‐Ga2O3 epilayers and substrates are reported. The Mg accumulates toward the (100) surface upon annealing under an oxidizing environment, whereas the concentration profile changes ...
Ta‐Shun Chou   +10 more
doaj   +1 more source

Phase diagrams for the MOVPE growth of ZnTe and ZnSeTe

open access: yes, 1997
The phase diagrams for the MOVPE growth of ZnTe and ZnSeTe have been proposed for the first time, based on the thermodynamic equilibrium established at the solid-vapor interface, The regions for the single condensed phase of ZnTe(s) and of ZnSeTe(s) have
Duan SK   +2 more
core  

CBVB-nH complexes as prevalent defects in metal-organic vapor-phase epitaxy-grown hexagonal boron nitride

open access: yesnpj 2D Materials and Applications
Optically active defects in hexagonal boron nitride (hBN) are promising candidates for active components in emerging quantum technologies, such as single-photon emitters and spin centers.
Marek Maciaszek, Bartłomiej Baur
doaj   +1 more source

Heat Dissipation Schemes in AlInAs/InGaAs/InP Quantum Cascade Lasers Monitored by CCD Thermoreflectance

open access: yesPhotonics, 2017
In this paper, we report on the experimental investigation of the thermal performance of lattice matched AlInAs/InGaAs/InP quantum cascade lasers. Investigated designs include double trench, single mesa, and buried heterostructures, which were grown by ...
Dorota Pierścińska   +9 more
doaj   +1 more source

The Photoionization Processes of Deep Trap Levels in n-GaN Films Grown by MOVPE Technique on Ammono-GaN Substrates

open access: yesApplied Sciences
In this paper, we present various theoretical models that accurately approximate the spectral density of the optical capture cross-section (σe0) obtained through the analysis of photo-capacitance transients using the deep-level optical spectroscopy (DLOS)
Piotr Kruszewski   +3 more
doaj   +1 more source

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