Results 101 to 110 of about 7,044 (217)

Luminescence and reflectivity of GaN/sapphire grown by MOVPE, GSMBE and HVPE

This work presents an optical characterization by luminescence and reflectivity of GaN layers grown on sapphire using MOVPE, HVPE and GSMBE. Well resolved optical spectra are obtained for each growth technique.
Leroux, M., Grandjean, N., Massies, J., Faurie, J. P., Gibart, P., Beaumont, B.   +5 more
core   +1 more source

Nitride MOVPE tops the bill

III-Vs Review, 1999
AbstractThe predominance of activity in the nitrides field and the emergence of in situ monitoring into mainstream metal organic vapour phase epitaxy were among the themes of the 8th European Workshop on MOVPE. The location of Prague close to the geographical centre of the united Europe did much to encourage participation from all corners of the ...
openaire   +1 more source

Kvantově rozměrné struktury pro fotoniku a elektroniku, připravené pomocí MOVPE

, 2003
Study of structural and electro-optical properties of the MOVPE grown lasers with .delta.-InAs ...
Mačkal, Adam
core  

Pattern Formation by Changing V/III Ratio During Growth of GaAs by Movpe

, 1995
Rode pointed out that periodically-disturbed surface morphology can occur on epilayers grown on slightly misoriented substrates. Johnson and Legg investigated Rode's prediction in Metalorganic Vapour Phase Epitaxy (MOVPE) of AIGaAs at fixed V/III ratio ...
S. A. Shivashankar, Shashi Paul
core   +1 more source

Hall sensors based on GaAs structures obtained by low-temperature LPE from Bi melts

Технологія та конструювання в електронній апаратурі, 2002
The features of obtaining s. i.-GaAs—n-GaAs:Sn epitaxial structures for Hall sensors by the low-temperature "bismuth" liquid phase epitaxy (LPE) method are considered.
M. M. Vakiv, S. I. Krukovskyi, I. R. Zaverbnyi, I. A. Mrykhin   +3 more
doaj  

The MOVPE community meets in Berlin

III-Vs Review, 1997
AbstractBerlin, host of this year's European Workshop on Metal-Organic Vapour Phase Epitaxy (EW MOVPE VII), is a city which has developed into one of the ‘centres of excellence’ in the field of MOVPE. An overview of MOVPE activities and related issues in the German capital — from basic growth studies to research and development of devices — is ...
openaire   +1 more source

Defect States In p-ZnSe:N Grown By MOVPE

, 1996
Concentration and origin of defect states in p-type nitrogen-doped ZnSe (p-ZnSe:N) grown by metalorganic vapor-phase epitaxy (MOVPE) are discussed by means of timeresolved photoluminescence and deep level transient spectroscopy.
Shigeo Fujita, Shizuo Fujita, Ken-Ichi Ogata, Daisuke Kawaguchi, Zhi Gang Peng   +4 more
core   +1 more source

Multi-technique characterization of MOVPE-grown GaAs on Si

, 2010
Artículos en revistasEste es un trabajo de caracterización mediante múltiples técnicas con el objeto investigar las propiedades de las capas de GaAs crecidas por MOVPE sobre sustratos de Si - (100) con un offset de 4 hacia bajo diferentes condiciones ...
Bennet, N.S., Tejedor Jorge, Paloma, Hurley, P.K., Wong, C.S., Molina Aldereguia, Jon, Cherkaoui, K., Monaghan, S., McNally, P.J., Galiana Blanco, Beatriz, Benedicto Córdoba, Marcos   +9 more
core  

Growth of InN by vertical flow MOVPE

, 2006
InN films were grown by metal-organic vapour phase epitaxy (MOVPE). The growth was performed in a MOVPE apparatus with a vertical reactor geometry optimized for the growth of GaN.
Rangel-Kuoppa, Victor-Tapio, Suihkonen, Sami; id_orcid, Sopanen, Markku, Sormunen, J., Koskenvaara, H.   +4 more
core   +1 more source

MOVPE Growth and Doping Optimization of n-AlGaAs Layers for Laser Diode Applications

Cumhuriyet Science Journal
Epitaxial n-AlₓGa₁₋ₓAs layers, which form the basis of semiconductor laser structures, play a critical role in both optical and electrical performance of the device.
İlkay Demir, Gamze Yolcu
doaj   +1 more source