Results 101 to 110 of about 6,729 (212)

Fabrication of InGaAlAs MQW buried heterostructure lasers by narrow stripe selective MOVPE

, 2007
Fabrication of InGaAlAs MQW buried heterostructure (BH) lasers by narrow stripe selective MOVPE is demonstrated in this paper. High quality InGaAlAs MQWs were first grown by narrow stripe selective MOVPE without any etching process and assessed by ...
Zhao LJ, Wang BJ, Wang LF, Pan JQ, Feng W, An X, Wang W, Bian J, Zhou F, Zhu HL, Feng, W, Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: wfeng@semi.ac.cn   +10 more
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选择外延MOVPE的表面迁移

, 2002
研究了采用选择外延MOVPE生长InGaAsP的组分随掩模宽度的变化规律，以及InGaAsP表面边缘尖角随V／III比的变化。结果表明，随着掩模宽度的增大，In组分增大，Ga组分减少；随着V／III比的增大，InGaAsP材料表面趋向平坦。对材料边缘尖角的变化规律作出了合理解释，研制出表面平坦的外延材料 ...
王圩, 周帆, 邱伟彬, 董杰
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Etching Behavior of GaN/GaAs(001) Epilayers Grown by MOVPE

, 2002
Wet etching characteristics of cubic GAN (c-GaN) thin films grown on GaAs(001) by metalorganic vapor phase epitaxy (MOVPE) are investigated. The samples are etched in HCl, H_3PO_4, KOH aqueous solutions, and molten KOH at temperatures in the range of 90 ...
Fu Yi, Zhang Zehong, Yang Hui, Zhang Baoshun, Sun Yuanping, Feng Gan, Shen Xiaoming, Feng Zhihong   +7 more
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InAs/GaAs quantum-size structures grown by MOVPE

, 2002
Structures with quantum size objects as self-organised quantum dots, quantum rings, wires and quasi-quantum wells could be reproducibly grown by MOVPE.
Hospodková, Alice
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Pattern Fidelity of Vertically Aligned GaAs Nanowire Arrays. [PDF]

Small
Koch J, Qiu J, Bohlemann CY, Ostheimer D, Zhao H, Kleinschmidt P, Lei Y, Hannappel T.   +7 more
europepmc   +1 more source

Sputtered AlN Buffer Layer for Low-Loss Crystalline AlN-on-Sapphire Integrated Photonics. [PDF]

ACS Photonics
Brunetta S, Sbarra S, Loke BSY, Carlin JF, Grandjean N, Brès CS, Butté R.   +6 more
europepmc   +1 more source

Highly Oriented Epitaxial Hexagonal Boron Nitride Multilayers on High-Temperature-Resistant Single-Crystal Aluminum Nitride (0001). [PDF]

Adv Sci (Weinh)
Yang X, Pristovsek M, Nitta S, Honda Y, Ohtake A, Sakuma Y, Hiroto T, Ishida T, Ikezawa M, Guo Q, Amano H.   +10 more
europepmc   +1 more source

Growth of semiconducting heterostructures by MOVPE

, 2008
The lecture focuses on properties, preparation and in-situ characterization of semiconducting heterostructures prepared by MOVPE ...
Hulicius, Eduard
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Supersaturation-Dependent Competition between β and κ Phases in the MOVPE Growth of Ga₂O₃ on Al₂O₃ (0001) and GaN (0001) Substrates. [PDF]

ACS Appl Mater Interfaces
Seravalli L, Ugolotti A, Bergamaschini R, Bosi M, Cora I, Mezzadri F, Mazzolini P, Cademartiri L, Bertoni I, Fogarassy Z, Pécz B, Bierwagen O, Ardenghi A, Leone S, Nasi L, Miglio L, Fornari R.   +16 more
europepmc   +1 more source

Nucleation studies of MOVPE grown antimonides

, 1995
MOVPE - metalorganic vapour phase epitaxyAvailable from British Library Document Supply Centre-DSC:D193107 / BLDSC - British Library Document Supply CentreSIGLEGBUnited ...
Graham, R.M.
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