Results 101 to 110 of about 5,528 (229)

Etching Behavior of GaN/GaAs(001) Epilayers Grown by MOVPE

, 2002
Wet etching characteristics of cubic GAN (c-GaN) thin films grown on GaAs(001) by metalorganic vapor phase epitaxy (MOVPE) are investigated. The samples are etched in HCl, H_3PO_4, KOH aqueous solutions, and molten KOH at temperatures in the range of 90 ...
Fu Yi, Zhang Zehong, Yang Hui, Zhang Baoshun, Sun Yuanping, Feng Gan, Shen Xiaoming, Feng Zhihong   +7 more
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MOVPE Growth and Doping Optimization of n-AlGaAs Layers for Laser Diode Applications

Cumhuriyet Science Journal
Epitaxial n-AlₓGa₁₋ₓAs layers, which form the basis of semiconductor laser structures, play a critical role in both optical and electrical performance of the device.
İlkay Demir, Gamze Yolcu
doaj   +1 more source

Fabrication of InGaAlAs MQW buried heterostructure lasers by narrow stripe selective MOVPE

, 2007
Fabrication of InGaAlAs MQW buried heterostructure (BH) lasers by narrow stripe selective MOVPE is demonstrated in this paper. High quality InGaAlAs MQWs were first grown by narrow stripe selective MOVPE without any etching process and assessed by ...
Zhao LJ, Wang BJ, Wang LF, Pan JQ, Feng W, An X, Wang W, Bian J, Zhou F, Zhu HL, Feng, W, Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: wfeng@semi.ac.cn   +10 more
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Assessment of Organotellurium Compounds for Use as Movpe Precursors

, 1988
In order to reduce the growth temperature of (Hg,Cd)Te by MOVPE below 350–400°C, alternative organometallic precursors will be required which either decompose at a lower temperature than existing precursors or which absorb strongly at a suitable ...
D. Cole-Hamilton, S. J. C. Irvine, J. E. Hails, D. V. Shenai-Khatkhate, J. B. Mullin   +4 more
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选择外延MOVPE的表面迁移

, 2002
研究了采用选择外延MOVPE生长InGaAsP的组分随掩模宽度的变化规律，以及InGaAsP表面边缘尖角随V／III比的变化。结果表明，随着掩模宽度的增大，In组分增大，Ga组分减少；随着V／III比的增大，InGaAsP材料表面趋向平坦。对材料边缘尖角的变化规律作出了合理解释，研制出表面平坦的外延材料 ...
王圩, 周帆, 邱伟彬, 董杰
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In situ annealing treatment and In-doping of GaN epilayers grown by MOVPE

, 2000
The effects of in situ annealing treatment in the initial growth stage and In-doping during growth of the GaN on the material properties were investigated. GaN was grown by LP-MOVPE.
Lu DC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat & Sci,POB 912,Beijing 100083,Peoples R China., Liu XL, Lu DC, Wang CX, Yuan HR, Lu DC Chinese Acad Sci Inst Semicond Lab Semicond Mat & Sci POB 912 Beijing 100083 Peoples R China., Wang XH   +6 more
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Vapour Pressure Measurements on Organotellurium Precursors for Movpe

, 1989
Before an organometallic compound can be used as an MOVPE precursor, certain basic properties need to be known and one of the most important of these is vapour pressure.
J.E. Hails, S.J.C. Irvine, J.B. Mullin
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InAs/GaAs quantum-size structures grown by MOVPE

, 2002
Structures with quantum size objects as self-organised quantum dots, quantum rings, wires and quasi-quantum wells could be reproducibly grown by MOVPE.
Hospodková, Alice
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Prototypes of Highly Effective Stress Balancing AlN Interlayers in MOVPE GaN-on-Si (111)

Inorganics
The GaN-on-Si virtual substrate is now an indispensable platform for the application of GaN in the fields of power devices, radio frequency, light-emitting devices, etc. Such applications are still in need of more effective stress balancing techniques to
Cai Liu, Gaomin Li, Hassanet Sodabanlu, Masakazu Sugiyama, Yoshiaki Nakano   +4 more
doaj   +1 more source

Alumiinigalliumnitridin valmistus MOVPE-menetelmällä

, 2005
Tämä diplomityö käsittelee alumiinigalliumnitridin epitaktista valmistusta galliumnitridikerroksen päälle. Työ tehtiin Teknillisen korkeakoulun Optoelektroniikan laboratoriossa. AlGaN-kerrokset valmistettiin MOVPE-laitteistolla ja niiden ominaisuuksien
Svensk, Olli
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