Results 101 to 110 of about 11,730 (206)

Growth control of GaAs nanowires using pulsed laser deposition with arsenic over pressure

, 2007
Using pulsed laser ablation with arsenic over pressure, the growth conditions for GaAs nanowires have been systematically investigated and optimized. Arsenic over pressure with As$_2$ molecules was introduced to the system by thermal decomposition of ...
A J Hauser, Borgström M T, F Y Yang, Roest A L, T R Lemberger, X W Zhao   +5 more
core   +1 more source

Red light-emitting diode with full InGaN structure on a ScAlMgO4 substrate

Applied Physics Express
Here, we report the first demonstration of a full InGaN-based red LED grown on a c -plane ScAlMgO _4 substrate. This work represents a potential approach for achieving red emissions from an InGaN quantum well grown on InGaN underlying layers.
Mohammed A. Najmi, Rawan S. Jalmood, Ivan Kotov, Cesur Altinkaya, Wakana Takeuchi, Daisuke Iida, Kazuhiro Ohkawa   +6 more
doaj   +1 more source

Intersubband Quantum Disc-in-Nanowire Photodetectors with Normal-incidence Response in the Long-wavelength Infrared

, 2017
Semiconductor nanowires offer great potential for realizing broadband photodetectors that are compatible with silicon technology. However, the spectral range of such detectors has so far been limited to selected regions in the ultraviolet, visible and ...
Borgstrom, Magnus T., Fu, Ying, Geijselaers, Irene, Heurlin, Magnus, Jain, Vishal, Karimi, Mohammad, Limpert, Steven, Linke, Heiner, Nowzari, Ali, Pettersson, Hakan, Samuelson, Lars, Zeng, Xulu   +11 more
core   +1 more source

Out‐Diffusion and Uphill‐Diffusion of Mg in Czochralski‐Grown (100) β‐Ga2O3 Under High‐Temperature Annealing and Its Influence on Lateral MOSFET Devices

Advanced Electronic Materials
In this work, the out‐diffusion and uphill‐diffusion of Mg inside (100) β‐Ga2O3 epilayers and substrates are reported. The Mg accumulates toward the (100) surface upon annealing under an oxidizing environment, whereas the concentration profile changes ...
Ta‐Shun Chou, Thi Thuy Vi Tran, Hartwin Peelaers, Kornelius Tetzner, Oliver Hilt, Jana Rehm, Saud Bin Anooz, Andreas Fiedler, Zbigniew Galazka, Martin Albrecht, Andreas Popp   +10 more
doaj   +1 more source

Heat Dissipation Schemes in AlInAs/InGaAs/InP Quantum Cascade Lasers Monitored by CCD Thermoreflectance

Photonics, 2017
In this paper, we report on the experimental investigation of the thermal performance of lattice matched AlInAs/InGaAs/InP quantum cascade lasers. Investigated designs include double trench, single mesa, and buried heterostructures, which were grown by ...
Dorota Pierścińska, Kamil Pierściński, Piotr Gutowski, Mikołaj Badura, Grzegorz Sobczak, Olga Serebrennikova, Beata Ściana, Marek Tłaczała, Grzegorz Sobczak, Maciej Bugajski   +9 more
doaj   +1 more source

Structural and paramagnetic properties of dilute Ga1-xMnxN

, 2011
Systematic investigations of the structural and magnetic properties of single crystal (Ga,Mn)N films grown by metal organic vapor phase epitaxy are presented. High resolution transmission electron microscopy, synchrotron x-ray diffraction, and extended x-
Alberta Bonanni, Andrea Navarro-Quezada, Andreas Grois, Bogdan Faina, Dariusz Sztenkiel, F. Boscherini, F. D’Acapito, Francesco d’Acapito, K. A. Kikoin, M.-H. Ham, Maciej Sawicki, Mauro Rovezzi, Rafał Jakieła, Thibaut Devillers, Tian Li, Tomasz Dietl, Wiktor Stefanowicz   +16 more
core   +1 more source

CBVB-nH complexes as prevalent defects in metal-organic vapor-phase epitaxy-grown hexagonal boron nitride

npj 2D Materials and Applications
Optically active defects in hexagonal boron nitride (hBN) are promising candidates for active components in emerging quantum technologies, such as single-photon emitters and spin centers.
Marek Maciaszek, Bartłomiej Baur
doaj   +1 more source

The Photoionization Processes of Deep Trap Levels in n-GaN Films Grown by MOVPE Technique on Ammono-GaN Substrates

Applied Sciences
In this paper, we present various theoretical models that accurately approximate the spectral density of the optical capture cross-section (σe0) obtained through the analysis of photo-capacitance transients using the deep-level optical spectroscopy (DLOS)
Piotr Kruszewski, Konrad Sakowski, Krzysztof Gościński, Paweł Prystawko   +3 more
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Growth parameters of InAs/GaAs quantum dots grown by MOVPE [PDF]

, 2006
Quantum dots are zero dimensional structures and therefore have superior transport and optical properties compared to either 2-dimensional or 3-dimensional structures.
Lim, Kheng Boo, Muhammad, Rosnita, Othaman, Zulkafli, Roslan, Sharizar   +3 more
core  

Structural and Optical properties of Zn(1-x)MgxO nanocrystals obtained by low temperature method

, 2006
In this paper we report structural and optical properties of Magnesium substituted Zinc Oxide (Zn1-xMgxO) nanocrystals (~10-12nm) synthesized by low temperature route.
Ghosh, Manoranjan, Raychaudhuri, A. K.
core   +1 more source