Results 121 to 130 of about 5,528 (229)

Supersaturation-Dependent Competition between β and κ Phases in the MOVPE Growth of Ga₂O₃ on Al₂O₃ (0001) and GaN (0001) Substrates. [PDF]

ACS Appl Mater Interfaces
Seravalli L, Ugolotti A, Bergamaschini R, Bosi M, Cora I, Mezzadri F, Mazzolini P, Cademartiri L, Bertoni I, Fogarassy Z, Pécz B, Bierwagen O, Ardenghi A, Leone S, Nasi L, Miglio L, Fornari R.   +16 more
europepmc   +1 more source

Cathodoluminescence on GaN hexagonal pyramids on submicron dot-patterns via selective MOVPE

, 2000
Three-dimensional GaN pyramids have been successfully obtained on submicron dot-patterned (0001) sapphire substrates by using the selective metalorganic vapor phase epitaxy (MOVPE) technique.
Sawaki N, Zhu QS, Matsushima H, Hiramatsu K, Zhu QS,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.   +4 more
core  

Quantum walk comb in a dual waveguide quantum cascade laser. [PDF]

Nat Commun
Cargioli A, Montesinos Ballester M, Gantner S, Gini E, Beck M, Faist J.   +5 more
europepmc   +1 more source

SIMS Investigation of Al Diffusion Across Interfaces in AlGaN/GaN and AlN/GaN Heterostructures. [PDF]

Nanomaterials (Basel)
Laifi J, Hasaneen MF, Bchetnia A.
europepmc   +1 more source

Influence of different interlayers on growth mode and properties of InN by MOVPE

, 2008
We grow InN epilayers on different interlayers by metal organic vapour phase epitaxy (MOVPE) method, and investigate the effect of interlayer on the properties and growth mode of InN films.
Yang, SY, Hu, WG, Zhu, QS, Zhang, RQ, Jiao, CM, Zhang, RQ, Chinese Acad Sci, Inst Semicond, Key Lab Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: zhangriq@semi.ac.cn, Kang, TT, Liu, XL, xlliu@semi.ac.cn   +8 more
core  

Growth of High Aspect Ratio Wurtzite GaAs Nanowires. [PDF]

Cryst Growth Des
Jansen MM, Peeters WHJ, Lamon D, Schouten MF, Verheijen MA, Bakkers EPAM.   +5 more
europepmc   +1 more source

Epitaxial Growth of CaTiO₃ Thin Films by Metal Organic Vapor Phase Epitaxy for Potential Applications in Memristive Devices. [PDF]

Cryst Growth Des
Abdeldayem M, Liu CM, Shah IA, Fiedler A, Klimm D, Albrecht M, Schwarzkopf J.   +6 more
europepmc   +1 more source

Growth of Ga_0.70In_0.30N/GaN Quantum-Wells on a ScAlMgO₄ (0001) Substrate with an Ex-Situ Sputtered-AlN Buffer Layer. [PDF]

Materials (Basel), 2023
Zheng DG, Min S, Kim J, Han DP.
europepmc   +1 more source

Multi-technique characterization of MOVPE-grown GaAs on Si

, 2010
Artículos en revistasEste es un trabajo de caracterización mediante múltiples técnicas con el objeto investigar las propiedades de las capas de GaAs crecidas por MOVPE sobre sustratos de Si - (100) con un offset de 4 hacia bajo diferentes condiciones ...
Bennet, N.S., Tejedor Jorge, Paloma, Hurley, P.K., Wong, C.S., Molina Aldereguia, Jon, Cherkaoui, K., Monaghan, S., McNally, P.J., Galiana Blanco, Beatriz, Benedicto Córdoba, Marcos   +9 more
core  

Accurate Prediction of Optical Transitions in Epitaxial InGaAs/InAlAs Asymmetric Coupled Quantum-Well Structures. [PDF]

ACS Nanosci Au
Pantzas K, Trinité V, Vasanelli A, Sirtori C, Beaudoin G, Sagnes I, Reverchon JL, Patriarche G.   +7 more
europepmc   +1 more source