Results 121 to 130 of about 7,044 (217)

Pattern formation by changing V/III ratio during growth of GaAs by MOVPE

open access: yes, 1996
Rode pointed out that periodically-disturbed surface morphology can occur on epilayers grown on slightly misoriented substrates. Johnson and Legg investigated Rode's prediction in metalorganic vapour phase epitaxy (MOVPE) of AlGaAs at fixed V/III ratio ...
Shivashankar, SA, Paul, S
core  

Growth of High Aspect Ratio Wurtzite GaAs Nanowires. [PDF]

open access: yesCryst Growth Des
Jansen MM   +5 more
europepmc   +1 more source

Pulsed-Liquid-Injection MOCVD of Epitaxial β‑Ga<sub>2</sub>O<sub>3</sub> Thin Films as a Promising Alternative Chemical Route. [PDF]

open access: yesACS Mater Au
Velasco Enriquez M   +10 more
europepmc   +1 more source

Large-Area Growth of High-Optical-Quality MoSe2/hBN Heterostructures with Tunable Charge Carrier Concentration. [PDF]

open access: yesACS Appl Mater Interfaces
Ludwiczak K   +11 more
europepmc   +1 more source

Accurate Prediction of Optical Transitions in Epitaxial InGaAs/InAlAs Asymmetric Coupled Quantum-Well Structures. [PDF]

open access: yesACS Nanosci Au
Pantzas K   +7 more
europepmc   +1 more source

III-Nitride MEMS drum resonators on flexible metal substrates. [PDF]

open access: yesMicrosyst Nanoeng
Kassem A   +13 more
europepmc   +1 more source

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