Growth of Ga0.70In0.30N/GaN Quantum-Wells on a ScAlMgO4 (0001) Substrate with an Ex-Situ Sputtered-AlN Buffer Layer. [PDF]
Zheng DG, Min S, Kim J, Han DP.
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In Situ Process Control during Wet-Chemical Etching of Heteroepitaxial III-V Layers Using Reflection Anisotropy Spectroscopy. [PDF]
Schmitt EA +7 more
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III-Nitride MEMS drum resonators on flexible metal substrates. [PDF]
Kassem A +13 more
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A framework for guiding safe and sustainable-by-design innovation. [PDF]
Blanco CF +5 more
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GaSb/Ga0.51In0.49P self assembled quantum dots grown by MOVPE
Hammar, Mattias, +3 more
core +4 more sources
Monolithically Integrated GaAs Nanoislands on CMOS-Compatible Si Nanotips Using GS-MBE. [PDF]
Rodrigues A +6 more
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Nucleation-Accelerated Epitaxy at Large-Area (100) β‑Ga<sub>2</sub>O<sub>3</sub> Terraces. [PDF]
Im S +9 more
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The influence of potassium post-deposition treatments on grain boundaries and surfaces of Cu(In,Ga)Se<sub>2</sub> absorbers. [PDF]
Martin Lanzoni E +7 more
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Two-dimensional buffer breaks substrate limit in III-nitrides epitaxy. [PDF]
Sang Y +18 more
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Dual-Functional Metal Interlayer Enables High-Quality GaN Epitaxy and Low-Damage Transfer Towards Flexible Optoelectronics. [PDF]
Ma Y +5 more
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