Kvantově rozměrné struktury pro fotoniku a elektroniku, připravené pomocí MOVPE
Study of structural and electro-optical properties of the MOVPE grown lasers with .delta.-InAs ...
Mačkal, Adam
core
Large-Area Growth of High-Optical-Quality MoSe2/hBN Heterostructures with Tunable Charge Carrier Concentration. [PDF]
Ludwiczak K +11 more
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From Layer-by-Layer Growth to Nanoridge Formation: Selective Area Epitaxy of GaAs by MOVPE. [PDF]
Morgan N +7 more
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Local Droplet Etching with Indium Droplets on InP(100) by Metal-Organic Vapor Phase Epitaxy. [PDF]
Sala EM, In Na Y, Heffernan J.
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III-Nitride MEMS drum resonators on flexible metal substrates. [PDF]
Kassem A +13 more
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Monolithically Integrated GaAs Nanoislands on CMOS-Compatible Si Nanotips Using GS-MBE. [PDF]
Rodrigues A +6 more
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Two-dimensional buffer breaks substrate limit in III-nitrides epitaxy. [PDF]
Sang Y +18 more
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Violet to Near-Infrared Optical Addressing of Spin Pairs in Hexagonal Boron Nitride. [PDF]
Singh P +11 more
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A nanolaser with extreme dielectric confinement. [PDF]
Xiong M +7 more
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A Critical Comparison Among High-Resolution Methods for Spatially Resolved Nano-Scale Residual Stress Analysis in Nanostructured Coatings. [PDF]
Rashid S +6 more
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