Investigation of III-Nitride MEMS Pressure Sensor for High-Temperature Applications. [PDF]
Prio MH +6 more
europepmc +1 more source
Nucleation-Limited Kinetics of GaAs Nanostructures Grown by Selective Area Epitaxy: Implications for Shape Engineering in Optoelectronics Devices. [PDF]
Zendrini M +5 more
europepmc +1 more source
Analytical Modeling on Investigating the Electric Field Shift Behavior of GaN Vertical FinFETs. [PDF]
Michel A +5 more
europepmc +1 more source
Low-Loss Buried InGaAs/InP Integrated Waveguides in the Long-Wave Infrared. [PDF]
Montesinos-Ballester M +7 more
europepmc +1 more source
Visualizing Nanoscale Charge Flows in Multi-Dimensional WSe2/GaAs Vertical Diodes
Piazza V +6 more
europepmc +1 more source
InGaN multiquantum wells-problem of carrier injection. [PDF]
Bojarska-Cieślińska A +4 more
europepmc +1 more source
Homoepitaxy of Boron Nitride on Exfoliated Hexagonal Boron Nitride Flakes. [PDF]
Binder J +12 more
europepmc +1 more source
Quantum confinement and hybrid integration in silicon light emitters toward scalable on-chip photonics. [PDF]
Pourmand M +8 more
europepmc +1 more source
Engineering of Interface Barrier in Hybrid MXene/GaN Heterostructures for Schottky Diode Applications. [PDF]
Majchrzak D +8 more
europepmc +1 more source
Quasi-Thermodynamic Analysis of MOVPE of AlGaN
A quasi-thermodynamic analysis of the MOVPE growth of AlxGa1-xN alloy using TMGa, TMA1 and ammonia has been proposed. The effect of varying growth conditions (growth temperature, reactor pressure, input V/III ratio, hydrogen pressure fraction in the ...
Da-Cheng Lu
exaly +1 more source

