Results 151 to 160 of about 6,729 (212)

Engineering of Interface Barrier in Hybrid MXene/GaN Heterostructures for Schottky Diode Applications. [PDF]

ACS Appl Mater Interfaces
Majchrzak D, Kulinowski K, Olszewski W, Kuna R, Hlushchenko D, Piejko A, Grodzicki M, Hommel D, Kudrawiec R.   +8 more
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Alloying hBN with aluminum influences absorption and electronic properties. [PDF]

Sci Rep
Iwański J, Tokarczyk M, Dąbrowska AK, Pawłowski J, Tatarczak P, Strawski M, Sobczak K, Bilska M, Wójcik M, Kret S, Binder J, Wysmołek A.   +11 more
europepmc   +1 more source

Direct investigation of localized leakage currents in GaN-on-sapphire pn-diodes. [PDF]

Sci Rep
Kinstler AD, Neumann R, Taylor AA, Besendörfer S, Meissner E, Weingärtner R, Brunner F, Brusaterra E, Bahat Treidel E, Schulze J.   +9 more
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Nanoscale photonic artificial neuron with biological signal processing. [PDF]

Nat Commun
Sestoft JE, Jensen TK, Flodgren V, Das A, Schlosser RD, Alcer D, Lamers M, Kanne T, Borgström MT, Nygård J, Mikkelsen A.   +10 more
europepmc   +1 more source

Safe Handling of Gas for MOVPE

Oyo Buturi, 1989
openaire   +1 more source

Narrow-linewidth monolithic topological interface state extended laser with optical injection locking. [PDF]

Sci Adv
Sun X, Li Z, Sun Y, Marsh JH, Cumming DRS, Sweeney SJ, Kelly AE, Hou L.   +7 more
europepmc   +1 more source

Area-Selective Low-Pressure Thermal Atomic Layer Deposition of Gallium Nitride. [PDF]

ACS Omega
van der Wel BY, van der Zouw K, Aarnink AAI, Kovalgin AY.   +3 more
europepmc   +1 more source

Quasi-thermodynamic analysis of MOVPE of AlGaN

Journal of Crystal Growth, 2000
A quasi-thermodynamic analysis of the MOVPE growth of AlxGa1-xN alloy using TMGa, TMA1 and ammonia has been proposed. The effect of varying growth conditions (growth temperature, reactor pressure, input V/III ratio, hydrogen pressure fraction in the ...
Da‐Cheng Lu
exaly   +1 more source

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MOVPE of II–VI materials

Progress in Crystal Growth and Characterization of Materials, 1997
Abstract The development of II–VI MOVPE is reviewed, contrasting the narrow bandgap materials with the wide bandgap. Common issues are the need to grow the layers at lower temperatures than their III–V cousins in order to avoid point defects. This means that II–VI MOVPE occurs in a surface kinetic regime for precursor decomposition and has stimulated
S J C IRVINE, A STAFFORD, M U AHMED, P PRETE, AND R BERRIGAN   +4 more
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MOVPE growth of HgCdTe

Semiconductor Science and Technology, 1991
The critical steps in the development of MOVPE for the fabrication of MCT focal plane arrays (FPAs) are outlined. Improved purity of the source organometallics has enabled background donor concentrations in the mid 1014 cm-3 to be achieved, together with controlled back doping with donors or acceptors.
S J C Irvine, E R Gertner, L O Bubulac, R V Gil, D D Edwall   +4 more
openaire   +1 more source