Results 161 to 170 of about 11,730 (206)
Trion quantum coherence in site-controlled pyramidal InGaAs quantum dots. [PDF]
Sci RepBarcan RA +5 more
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Absorption Spectra of AlGaN/GaN Terahertz Plasmonic Crystals-Experimental Validation of Analytical Approach. [PDF]
Nanomaterials (Basel)Dub M +4 more
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Thickness Influences on Structural and Optical Properties of Thermally Annealed (GaIn)<sub>2</sub>O<sub>3</sub> Films. [PDF]
Nanomaterials (Basel)Zhang S +8 more
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One-dimensional photonic crystal nano-ridge surface emitting lasers epitaxially grown on a standard 300 mm silicon wafer. [PDF]
Light Sci ApplFahmy EMB +6 more
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Progress in Crystal Growth and Characterization of Materials, 1997
Abstract The development of II–VI MOVPE is reviewed, contrasting the narrow bandgap materials with the wide bandgap. Common issues are the need to grow the layers at lower temperatures than their III–V cousins in order to avoid point defects. This means that II–VI MOVPE occurs in a surface kinetic regime for precursor decomposition and has stimulated
S J C IRVINE +4 more
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Abstract The development of II–VI MOVPE is reviewed, contrasting the narrow bandgap materials with the wide bandgap. Common issues are the need to grow the layers at lower temperatures than their III–V cousins in order to avoid point defects. This means that II–VI MOVPE occurs in a surface kinetic regime for precursor decomposition and has stimulated
S J C IRVINE +4 more
openaire +1 more source
Semiconductor Science and Technology, 1991
The critical steps in the development of MOVPE for the fabrication of MCT focal plane arrays (FPAs) are outlined. Improved purity of the source organometallics has enabled background donor concentrations in the mid 1014 cm-3 to be achieved, together with controlled back doping with donors or acceptors.
S J C Irvine +4 more
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The critical steps in the development of MOVPE for the fabrication of MCT focal plane arrays (FPAs) are outlined. Improved purity of the source organometallics has enabled background donor concentrations in the mid 1014 cm-3 to be achieved, together with controlled back doping with donors or acceptors.
S J C Irvine +4 more
openaire +1 more source
Journal of Crystal Growth, 1986
Ga1−xInxAs1−ySby alloys have been grown by metalorganic vapor phase epitaxy (MOVPE) using trimethyl compounds of Ga In, As, and Sb (TMGa, TMIn, TMAs, and TMSb) plus AsH3 in an atmospheric pressure, horizontal, infrared heated reactor.For the first time, alloys near the center of the region of solid immiscibility have been grown.
M.J. Cherng +5 more
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Ga1−xInxAs1−ySby alloys have been grown by metalorganic vapor phase epitaxy (MOVPE) using trimethyl compounds of Ga In, As, and Sb (TMGa, TMIn, TMAs, and TMSb) plus AsH3 in an atmospheric pressure, horizontal, infrared heated reactor.For the first time, alloys near the center of the region of solid immiscibility have been grown.
M.J. Cherng +5 more
openaire +1 more source
physica status solidi (a), 2006
AbstractThis paper reports the in‐depth and in‐plane inhomogeneities in InN films. Samples of InN are grown on sapphire substrates without or with a buffer using the atmospheric‐pressure MOVPE. For the in‐depth inhomogeneity analysis, the conventional PL measurement using an excitation source with a different wavelength is made from both the front ...
Akio Yamamoto +3 more
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AbstractThis paper reports the in‐depth and in‐plane inhomogeneities in InN films. Samples of InN are grown on sapphire substrates without or with a buffer using the atmospheric‐pressure MOVPE. For the in‐depth inhomogeneity analysis, the conventional PL measurement using an excitation source with a different wavelength is made from both the front ...
Akio Yamamoto +3 more
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Microelectronic Engineering, 1992
Abstract In the field of optoelectronics the increasing complexity of components architecture requires a highly advanced and flexible growth technique. In this paper it will be demonstrated that by applying metalorganic vapor phase epitaxy (MOVPE) all requirements such as high speed, high performance, high yield, integrability, high throughput and ...
openaire +1 more source
Abstract In the field of optoelectronics the increasing complexity of components architecture requires a highly advanced and flexible growth technique. In this paper it will be demonstrated that by applying metalorganic vapor phase epitaxy (MOVPE) all requirements such as high speed, high performance, high yield, integrability, high throughput and ...
openaire +1 more source