Results 161 to 170 of about 6,729 (212)
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Fabrication of nanostructures using MBE and MOVPE
Physica Scripta, 1994Two different fabrication techniques to obtain nanometer scale structures without the use of lithography are demonstrated. Quantum dots are made on GaAs by growing strained InP islands by metal-organic vapour phase epitaxy. Quantum confinement of carriers is achieved by the growth of quantum wells on the InP islands.
Ahopelto, Jouni +7 more
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Journal of Crystal Growth, 1986
Ga1−xInxAs1−ySby alloys have been grown by metalorganic vapor phase epitaxy (MOVPE) using trimethyl compounds of Ga In, As, and Sb (TMGa, TMIn, TMAs, and TMSb) plus AsH3 in an atmospheric pressure, horizontal, infrared heated reactor.For the first time, alloys near the center of the region of solid immiscibility have been grown.
M.J. Cherng +5 more
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Ga1−xInxAs1−ySby alloys have been grown by metalorganic vapor phase epitaxy (MOVPE) using trimethyl compounds of Ga In, As, and Sb (TMGa, TMIn, TMAs, and TMSb) plus AsH3 in an atmospheric pressure, horizontal, infrared heated reactor.For the first time, alloys near the center of the region of solid immiscibility have been grown.
M.J. Cherng +5 more
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The growth of antimonides by MOVPE
Progress in Crystal Growth and Characterization of Materials, 1997Abstract There are three main reasons for the study of antimonides, they are the optical [mainly infrared], electrical [mainly Insb; the Gasb/Inas heterojunction] and structural [mainly ordering and spinodal decomposition] properties. These properties, together with the various techniques used to measure them, are discussed in the context of several ...
A. Aardvark, N.J. Mason, P.J. Walker
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physica status solidi (a), 2006
AbstractThis paper reports the in‐depth and in‐plane inhomogeneities in InN films. Samples of InN are grown on sapphire substrates without or with a buffer using the atmospheric‐pressure MOVPE. For the in‐depth inhomogeneity analysis, the conventional PL measurement using an excitation source with a different wavelength is made from both the front ...
Akio Yamamoto +3 more
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AbstractThis paper reports the in‐depth and in‐plane inhomogeneities in InN films. Samples of InN are grown on sapphire substrates without or with a buffer using the atmospheric‐pressure MOVPE. For the in‐depth inhomogeneity analysis, the conventional PL measurement using an excitation source with a different wavelength is made from both the front ...
Akio Yamamoto +3 more
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Microelectronic Engineering, 1992
Abstract In the field of optoelectronics the increasing complexity of components architecture requires a highly advanced and flexible growth technique. In this paper it will be demonstrated that by applying metalorganic vapor phase epitaxy (MOVPE) all requirements such as high speed, high performance, high yield, integrability, high throughput and ...
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Abstract In the field of optoelectronics the increasing complexity of components architecture requires a highly advanced and flexible growth technique. In this paper it will be demonstrated that by applying metalorganic vapor phase epitaxy (MOVPE) all requirements such as high speed, high performance, high yield, integrability, high throughput and ...
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Activation Mechanism in InGaN Grown by MOVPE
AIP Conference Proceedings, 2007Activation mechanism in unintentionally‐doped InGaN epilayers grown by metal organic vapor phase epitaxy was investigated as depending on In mole fraction. The samples were evaluated by variable temperature Hall effect measurements. For all samples n‐type conductivity was found to be dominated by a donor with activation energy between 2.48 meV and 14.2
LİŞESİVDİN, SEFER BORA +3 more
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GaN growth on porous silicon by MOVPE
Microelectronics Journal, 2003Abstract GaN films have been grown at 1050 °C on porous silicon (PS) substrates by metalorganic vapour phase epitaxy. The annealing phase of PS has been studied in temperature range from 300 to 1000 °C during 10 min under a mixture of ammonia (NH 3 ) and hydrogen (H 2 ).
Tarek Boufaden +3 more
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Principles of VPE and MOVPE and Applications
Materials Science Forum, 1998The fundamental laws and mechanisms behind vapour phase epitaxy (VPE) are illustrated and discussed, along with different methods and reactor architectures currently used for the growth of both elemental (Si) and compound (III-V, III-N and II-VI) semiconductors for micro- and optoelectronic devices; applications of cloride-, hydride- and metalorganic ...
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Development of InAlAsSb growth by MOVPE
Journal of Crystal Growth, 2017Abstract The growth of InAlAsSb by metal-organic vapor phase epitaxy has been demonstrated, with a controllable antimony fraction exceeding 6%. Calculations have shown that InAlAsSb with Sb contents greater than 5–7% in the quaternary are within the miscibility gap, however this work demonstrates specific growth conditions that allow compositions ...
Michael Slocum +5 more
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physica status solidi (b), 2010
AbstractGaAs nanowire (NW) growth was studied by metal‐organic vapour phase epitaxy (MOVPE). The vapour–liquid–solid (VLS) mechanism with gold‐based alloy particles and the selective‐area growth (SAG) mechanism on electron beam lithographically prepared SiNx/GaAs mask structures were applied.
Jens Bauer +3 more
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AbstractGaAs nanowire (NW) growth was studied by metal‐organic vapour phase epitaxy (MOVPE). The vapour–liquid–solid (VLS) mechanism with gold‐based alloy particles and the selective‐area growth (SAG) mechanism on electron beam lithographically prepared SiNx/GaAs mask structures were applied.
Jens Bauer +3 more
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