Results 181 to 190 of about 6,729 (212)
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Advances in MOVPE, MBE, and CBE

Journal of Crystal Growth, 1992
Abstract In epitaxial growth technology, both metalorganic vapor phase epitaxy (MOVPE) and molecular beam epitaxy (MBE) have become the dominant techniques after more than two decades of development. On the horizon, it is the emerging of chemical beam epitaxy (CBE) which has been proven to be a very powerful combination of MOVPE and MBE.
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Anisotropic Growth of GaAs in MOVPE

1989
In chloride vapour phase epitaxy of GaAs, it is known that the growth velocity depends on the cr stallographic face. Two orders of magnitude_difference in growth rate could occur between {111}Ga and {111}Aa. SO far, these features are strongly supported by the analysis of orientational dependence of the growth rate associated with surface kinetics.
Pierre Gibart   +5 more
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Photoluminescence of ZnSe grown by MOVPE

1988
This item was digitized as part of a project to share McGill's intellectual legacy with the public. If you are the copyright holder or a relative of the copyright holder who is deceased, you may request withdrawal by emailing escholarship.library@mcgill.ca.
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Effects of MOVPE Growth Conditions on GaN Layers Doped with Germanium

Materials, 2021
Dario Schiavon   +2 more
exaly  

Relation between Ga Vacancies, Photoluminescence, and Growth Conditions of MOVPE-Prepared GaN Layers

Materials, 2022
Jiří Pangrác   +2 more
exaly  

Segregation of Antimony in InP in MOVPE

2008
In this work the segregation of antimony in indium phosphide in metal organic vapour phase epitaxy (MOVPE)was systematically investigated. Therefore phophine stabilized InP surfaces were treated with tri-methyl-antimony (TMSb) in MOVPE. An antimony rich Sb/InP surface was established, showing a typical spectra for the antimonides observed in ...
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MOVPE technology

Proceedings of LEOS '93, 2002
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