Results 181 to 190 of about 5,528 (229)
Some of the next articles are maybe not open access.
GaN growth on porous silicon by MOVPE
Microelectronics Journal, 2003Abstract GaN films have been grown at 1050 °C on porous silicon (PS) substrates by metalorganic vapour phase epitaxy. The annealing phase of PS has been studied in temperature range from 300 to 1000 °C during 10 min under a mixture of ammonia (NH 3 ) and hydrogen (H 2 ).
Tarek Boufaden +3 more
openaire +1 more source
Principles of VPE and MOVPE and Applications
Materials Science Forum, 1998The fundamental laws and mechanisms behind vapour phase epitaxy (VPE) are illustrated and discussed, along with different methods and reactor architectures currently used for the growth of both elemental (Si) and compound (III-V, III-N and II-VI) semiconductors for micro- and optoelectronic devices; applications of cloride-, hydride- and metalorganic ...
openaire +2 more sources
Development of InAlAsSb growth by MOVPE
Journal of Crystal Growth, 2017Abstract The growth of InAlAsSb by metal-organic vapor phase epitaxy has been demonstrated, with a controllable antimony fraction exceeding 6%. Calculations have shown that InAlAsSb with Sb contents greater than 5–7% in the quaternary are within the miscibility gap, however this work demonstrates specific growth conditions that allow compositions ...
Michael Slocum +5 more
openaire +1 more source
Activation Mechanism in InGaN Grown by MOVPE
AIP Conference Proceedings, 2007Activation mechanism in unintentionally‐doped InGaN epilayers grown by metal organic vapor phase epitaxy was investigated as depending on In mole fraction. The samples were evaluated by variable temperature Hall effect measurements. For all samples n‐type conductivity was found to be dominated by a donor with activation energy between 2.48 meV and 14.2
LİŞESİVDİN, SEFER BORA +3 more
openaire +2 more sources
MOVPE of AlAsSb using tritertiarybutylaluminum
Journal of Crystal Growth, 1998Abstract We investigated the growth of AlAs 0.16 Sb 0.84 by using tritertiarybutylaluminum (TTBAl), tertiarybutylarsine (TBAs) and triethylantimony (TESb) as precursors. AlAs 0.16 Sb 0.84 layers, which are lattice-matched to InAs substrates, are used as cladding layers for Sb-based IR-lasers.
Ch Giesen, M.M Beerbom, X.G Xu, K Heime
openaire +1 more source
Mechanisms and results in MOVPE
Vacuum, 1990Abstract In this paper the relevant mechanisms for Metal Organic Vapour Phase Epitaxy (MOVPE) are summarized. The hydrodynamical aspects of gas phase transport are discussed but emphasis is put on the reaction routes leading to precursor decomposition and layer growth.
openaire +1 more source
MRS Internet Journal of Nitride Semiconductor Research, 1997
Mg has been widely used as p-doping species despite its intrinsic difficulties. It is nowadays well established that during the growth process of Mg doped GaN, atomic H is generated from the decomposition of NH3 and Mg-H complexes are formed in the layer.
S. Haffouz +6 more
openaire +1 more source
Mg has been widely used as p-doping species despite its intrinsic difficulties. It is nowadays well established that during the growth process of Mg doped GaN, atomic H is generated from the decomposition of NH3 and Mg-H complexes are formed in the layer.
S. Haffouz +6 more
openaire +1 more source
Journal of Crystal Growth, 1985
Abstract The MOVPE growth technique is shown to be useful for growing high quality layers of the ternary II–VI alloy Cd x Zn 1− x S (0 ⩽ x ⩽ 1) on to GaAS (100) and (111), and GaP (100) oriented substrates. The layers were grown in a horizontal reactor at atmospheric pressure, over the temperature range 200 to 500°C using dimethyl cadmium and ...
P.J. Wright, B. Cockayne, A.J. Williams
openaire +1 more source
Abstract The MOVPE growth technique is shown to be useful for growing high quality layers of the ternary II–VI alloy Cd x Zn 1− x S (0 ⩽ x ⩽ 1) on to GaAS (100) and (111), and GaP (100) oriented substrates. The layers were grown in a horizontal reactor at atmospheric pressure, over the temperature range 200 to 500°C using dimethyl cadmium and ...
P.J. Wright, B. Cockayne, A.J. Williams
openaire +1 more source
1998
Abstract Finding a proper group III precursor for growth of nitrides is an easy thing, since well-suited molecules have been developed, purified, and tested for the growth of the other III-V materials. The ‘simplest’ trimethyl, triethyl molecules are widely available, in very high purities, but more complicated molecules were also ...
openaire +1 more source
Abstract Finding a proper group III precursor for growth of nitrides is an easy thing, since well-suited molecules have been developed, purified, and tested for the growth of the other III-V materials. The ‘simplest’ trimethyl, triethyl molecules are widely available, in very high purities, but more complicated molecules were also ...
openaire +1 more source
Advances in MOVPE, MBE, and CBE
Journal of Crystal Growth, 1992Abstract In epitaxial growth technology, both metalorganic vapor phase epitaxy (MOVPE) and molecular beam epitaxy (MBE) have become the dominant techniques after more than two decades of development. On the horizon, it is the emerging of chemical beam epitaxy (CBE) which has been proven to be a very powerful combination of MOVPE and MBE.
openaire +1 more source