Results 181 to 190 of about 11,730 (206)

InAs nanowires grown by MOVPE

Journal of Crystal Growth, 2007
Epitaxial growth of Au-assisted InAs nanowires using metal organic vapour phase epitaxy is investigated. The growth rate and morphology of nanowires as a function of growth temperature, substrate material and precursor flows are discussed. It is observed that tapering increases with both In and As precursor flows, but decreases with temperature ...
Kimberly A. Dick, Knut Deppert, Lars Samuelson, Werner Seifert   +3 more
openaire   +1 more source

Enabling Terabit Systems through MOVPE

Journal of Crystal Growth, 2001
Abstract Low pressure metal-organic vapor phase epitaxy (MOVPE) is the dominant technology for the fabrication of transmitters and detectors for the fiber optic communication industry. These high bandwidth devices typically utilize heterostructure designs incorporating strained multiple quantum well active regions.
K.T. Campbell, C.H. Joyner, C.W. Ebert, A. Robertson, D.P. Wilt, J.L. Zilko   +5 more
openaire   +1 more source

Movpe growth of nitrides

1998
Abstract Finding a proper group III precursor for growth of nitrides is an easy thing, since well-suited molecules have been developed, purified, and tested for the growth of the other III-V materials. The ‘simplest’ trimethyl, triethyl molecules are widely available, in very high purities, but more complicated molecules were also ...
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Large-area MoS 2 deposition via MOVPE

Journal of Crystal Growth, 2017
Abstract The direct deposition of the 2D transition metal dichalcogenide MoS2 via metal-organic vapour phase epitaxy (MOVPE) is investigated. Growth is performed in a commercial AIXTRON horizontal hot-wall reactor. Molybdenum hexacarbonyl (MCO) and Di-tert-butyl sulfide (DTBS) are used as metal-organic precursors for molybdenum and sulfur ...
Marx, Matthias, Nordmann, Sven, Knoch, Joachim, Franzen, Christopher, Stampfer, Christoph, Andrzejewski, Dominik, Kümmell, Tilmar, Bacher, Gerd, Heuken, Michael, Kalisch, Holger, Vescan, Andrei   +10 more
openaire   +1 more source

Robust Reaction-Transport Models of Movpe Reactors

MRS Proceedings, 1997
ABSTRACTA simple gas-phase and surface kinetic model describing the Metalorganic Vapor Phase Epitaxy (MOVPE) of GaAs from trimethyl-gallium (TMG) and arsine has been extracted from reported reaction mechanisms through sensitivity analysis. This model was coupled with fundamental descriptions of the flow, heat and mass transfer in MOVPE reactors.
Theodoropoulos, C., Moffat, H. K., Mountziaris, T. J.   +2 more
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Furukawa electric MOVPE epiwafer technology

III-Vs Review, 1993
Abstract The Furukawa Electric Co., has been a major player in merchant epitaxial wafer supply since 1984. Since then, it has developed its own MOVPE epiwafer technologies to supply premium quality epiwafers around the world. Today 3-inch epiwafers are routine and 4-inch epiwafers are planned for 1994.
openaire   +1 more source

Activation Mechanism in InGaN Grown by MOVPE

AIP Conference Proceedings, 2007
Activation mechanism in unintentionally‐doped InGaN epilayers grown by metal organic vapor phase epitaxy was investigated as depending on In mole fraction. The samples were evaluated by variable temperature Hall effect measurements. For all samples n‐type conductivity was found to be dominated by a donor with activation energy between 2.48 meV and 14.2
LİŞESİVDİN, SEFER BORA, Kasap, MEHMET, ACAR, SELİM, Yildiz, A.   +3 more
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MOVPE growth of homoepitaxial germanium

Journal of Crystal Growth, 2008
n-Type Ge epitaxial layers were deposited on p-type Ge substrates by means of metal-organic vapour phase epitaxy (MOVPE) at temperatures ranging from 500 to 600 °C using isobutylgermane (iBuGe) as metal-organic precursor and hydrogen as carrier gas. The samples were grown at different iBuGe partial pressure conditions and were characterised by means of
Bosi M. a, Attolini G. a, Ferrari C. a, Frigeri C. a, Rimada Herrera J. C. a, Gombia E. a, Pelosi C. a, Peng R.W. b   +7 more
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Raman characterization of ZnSe/GaAs MOVPE heterostructures

Journal of Crystal Growth, 1991
Zinc selenide epilayers on GaAs (100) were grown by the MOVPE technique. Two combinations of source materials were employed. When zinc alkyls and H2Se were used, n-type materials were obtained at low crystal growth temperature (300-degrees-C). When zinc and selenide alkyls were employed, temperatures of 500-degrees-C were needed for growth: in this ...
Pagès, O., Renucci, M., Briot, Olivier, Tempier, N., Aulombard, Roger   +4 more
openaire   +2 more sources

MR350 MOVPE reactor 2014-2017

2018
presentation at National Epitaxy Facility (NEF) Away Day ...
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