Results 181 to 190 of about 7,044 (217)
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Journal of Crystal Growth, 1985
Abstract The MOVPE growth technique is shown to be useful for growing high quality layers of the ternary II–VI alloy Cd x Zn 1− x S (0 ⩽ x ⩽ 1) on to GaAS (100) and (111), and GaP (100) oriented substrates. The layers were grown in a horizontal reactor at atmospheric pressure, over the temperature range 200 to 500°C using dimethyl cadmium and ...
P.J. Wright, B. Cockayne, A.J. Williams
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Abstract The MOVPE growth technique is shown to be useful for growing high quality layers of the ternary II–VI alloy Cd x Zn 1− x S (0 ⩽ x ⩽ 1) on to GaAS (100) and (111), and GaP (100) oriented substrates. The layers were grown in a horizontal reactor at atmospheric pressure, over the temperature range 200 to 500°C using dimethyl cadmium and ...
P.J. Wright, B. Cockayne, A.J. Williams
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Selective area growth with MOVPE
Proceedings of 8th International Conference on Indium Phosphide and Related Materials, 2002Devices for optoelectronic and photonic applications are of growing interest for future optical networks. These devices commonly require the integration of at least one active section like laser, amplifier, modulator etc. with passive sections like low loss interconnection waveguides, etc..
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physica status solidi (b), 2010
AbstractGaAs nanowire (NW) growth was studied by metal‐organic vapour phase epitaxy (MOVPE). The vapour–liquid–solid (VLS) mechanism with gold‐based alloy particles and the selective‐area growth (SAG) mechanism on electron beam lithographically prepared SiNx/GaAs mask structures were applied.
Jens Bauer +3 more
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AbstractGaAs nanowire (NW) growth was studied by metal‐organic vapour phase epitaxy (MOVPE). The vapour–liquid–solid (VLS) mechanism with gold‐based alloy particles and the selective‐area growth (SAG) mechanism on electron beam lithographically prepared SiNx/GaAs mask structures were applied.
Jens Bauer +3 more
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Anisotropic Growth of GaAs in MOVPE
1989In chloride vapour phase epitaxy of GaAs, it is known that the growth velocity depends on the cr stallographic face. Two orders of magnitude_difference in growth rate could occur between {111}Ga and {111}Aa. SO far, these features are strongly supported by the analysis of orientational dependence of the growth rate associated with surface kinetics.
Pierre Gibart +5 more
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Photoluminescence of ZnSe grown by MOVPE
1988This item was digitized as part of a project to share McGill's intellectual legacy with the public. If you are the copyright holder or a relative of the copyright holder who is deceased, you may request withdrawal by emailing escholarship.library@mcgill.ca.
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Progress in MOVPE growth of Ga2O3
2019The metalorganic vapor-phase epitaxy (MOVPE) of gallium oxide is reviewed. It is shown that different Ga2O3 phases can be prepared by tuning the epitaxial growth parameters. The deposition temperature, partial pressure of the precursors, and crystallographic structure of the starting substrate/template are crucial in providing ?, ?, ?, and ? polymorph.
Fornari, Roberto
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Segregation of Antimony in InP in MOVPE
2008In this work the segregation of antimony in indium phosphide in metal organic vapour phase epitaxy (MOVPE)was systematically investigated. Therefore phophine stabilized InP surfaces were treated with tri-methyl-antimony (TMSb) in MOVPE. An antimony rich Sb/InP surface was established, showing a typical spectra for the antimonides observed in ...
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Gas-Phase Reaction Mechanism of InN MOVPE: A Systematic DFT Study
Journal of Crystal Growth, 2023Hong Zhang, Yuan Xue
exaly