Results 191 to 200 of about 5,528 (229)

Selective area growth with MOVPE

Proceedings of 8th International Conference on Indium Phosphide and Related Materials, 2002
Devices for optoelectronic and photonic applications are of growing interest for future optical networks. These devices commonly require the integration of at least one active section like laser, amplifier, modulator etc. with passive sections like low loss interconnection waveguides, etc..
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MOVPE growth for UV-LEDs

SPIE Proceedings, 2009
Challenges for the MOVPE growth of LED heterostructures for emission in the UV-A and UV-B spectral range are discussed. Special attention is given to the effects of strain in the In(Al)GaN active region as well as in the complete layer stack. Here in-situ monitoring of wafer bowing is shown to be an important tool for optimization of the growth ...
Arne Knauer, Frank Brunner, Tim Kolbe, Viola Küller, Hernan Rodriguez, Sven Einfeldt, Markus Weyers, Michael Kneissl   +7 more
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The MOVPE growth and doping of ZnTe

Semiconductor Science and Technology, 1991
Zinc telluride layers have been grown on (100) GaAs, GaSb and ZnTe substrates at 350 degrees C with atmospheric pressure MOVPE. Diisopropyl-telluride, dimethylzinc-triethylamine and diethylzinc were chosen as metallorganic precursors. The samples were characterized by photoluminescence at 2 K and the Hall effect. In the PL spectra the light hole, heavy
W Kuhn, H P Wagner, H Stanzl, K Wolf, K Worle, S Lankes, J Betz, M Worz, D Lichtenberger, H Leiderer, W Gebhardt, R Triboulet   +11 more
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Advances in the modeling of MOVPE processes

Journal of Crystal Growth, 2003
Abstract The paper reviews the progress in the modeling of metalorganic vapor phase epitaxy (MOVPE) of various III–V compounds. The recent studies focused on chemical gas-phase and surface phenomena have made possible the development of a global MOVPE model capable of predicting the growth rate and crystal composition within a 10% accuracy for some ...
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GaAs nanowires grown by MOVPE

physica status solidi (b), 2010
AbstractGaAs nanowire (NW) growth was studied by metal‐organic vapour phase epitaxy (MOVPE). The vapour–liquid–solid (VLS) mechanism with gold‐based alloy particles and the selective‐area growth (SAG) mechanism on electron beam lithographically prepared SiNx/GaAs mask structures were applied.
Jens Bauer, Hendrik Paetzelt, Volker Gottschalch, Gerald Wagner   +3 more
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InAs nanowires grown by MOVPE

Journal of Crystal Growth, 2007
Epitaxial growth of Au-assisted InAs nanowires using metal organic vapour phase epitaxy is investigated. The growth rate and morphology of nanowires as a function of growth temperature, substrate material and precursor flows are discussed. It is observed that tapering increases with both In and As precursor flows, but decreases with temperature ...
Kimberly A. Dick, Knut Deppert, Lars Samuelson, Werner Seifert   +3 more
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Anisotropic Growth of GaAs in MOVPE

1989
In chloride vapour phase epitaxy of GaAs, it is known that the growth velocity depends on the cr stallographic face. Two orders of magnitude_difference in growth rate could occur between {111}Ga and {111}Aa. SO far, these features are strongly supported by the analysis of orientational dependence of the growth rate associated with surface kinetics.
Pierre Gibart, Annie Tromson-Carli, Alok Rudra, Claude Schiller, Jean-Claude Guillaume, Yves Monteil   +5 more
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High Growth Rate MOVPE

2010
In this chapter, growth mechanism of GaN and AlGaN by MOVPE is described in detail. The parasitic reaction that generates particulates in vapor phase is the most probable limiting factor of maximum growth rate of GaN and AlGaN. Both experimental and quantum chemical study of vapor phase reaction between organo-metals and ammonia is described.
K. Matsumoto, H. Tokunaga, A. Ubukata, K. Ikenaga, Y. Fukuda, Y. Yano, T. Tabuchi, Y. Kitamura, S. Koseki, A. Yamaguchi, K. Uematsu   +10 more
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Segregation of Antimony in InP in MOVPE

2008
In this work the segregation of antimony in indium phosphide in metal organic vapour phase epitaxy (MOVPE)was systematically investigated. Therefore phophine stabilized InP surfaces were treated with tri-methyl-antimony (TMSb) in MOVPE. An antimony rich Sb/InP surface was established, showing a typical spectra for the antimonides observed in ...
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Gas-Phase reaction mechanism of InN MOVPE: A systematic DFT study

Journal of Crystal Growth, 2023
Yuan Xue
exaly