Results 191 to 200 of about 7,044 (217)

Thermodynamic Analysis on MOVPE Growth of Ga1−xInxP Semiconductor

Journal of Alloys and Compounds, 2003
Fuming Wang, Weijing Zhang
exaly  

MOVPE Processes

2012
openaire   +1 more source

MOVPE of crystalline Ge1Sb2Te4 (GST)

2014
Chalcogenide phase change materials show significant promise on the road to an ideal memory. Ge-Sb-Te alloys (GST) are considered to be one of the most suitable compounds for this application and are already widely used as non-volatile phase change memory in optical data storage and in first PRAM (Phase-change Random Access Memory) devices today [1, 2].
Schuck, Martin, Riess, Sally, Schreiber, Marcel, Mussler, Gregor, Mennicken, Max, Grützmacher, Detlev, Hardtdegen, Hilde   +6 more
openaire   +1 more source

Optimization of the MOVPE Growth of GaN on Sapphire

Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 1997
O Briot, R L Aulombard
exaly  

Thermodynamic Study on Phase Separation During MOVPE Growth of InxGa1−xN

Journal of Crystal Growth, 1998
Hisashi Seki, Akinori Koukitu
exaly  

Kinetic Studies on Thermal Decomposition of MOVPE Sources Using Fourier Transform Infrared Spectroscopy

Applied Surface Science, 1997
Yukihiro Shimogaki, H Komiyama, H Nagamoto   +2 more
exaly  

Progress in Modeling of III-Nitride MOVPE

Progress in Crystal Growth and Characterization of Materials, 2020
exaly  

Tertiarybutylhydrazine: A New Precursor for the MOVPE of Group III-Nitrides

Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 1999
André Fielicke, Klaus Rademann, U W Pohl   +2 more
exaly  

Planetary MOVPE Reactor Modelling

1994
C Waucquez, J Marchal
openaire   +1 more source

All Selective MOVPE Grown BH-LDs Fabricated by the Novel Self-Alignment Process

IEEE Photonics Technology Letters, 1996
Y Inomoto
exaly