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MOVPE of crystalline Ge1Sb2Te4 (GST)
2014Chalcogenide phase change materials show significant promise on the road to an ideal memory. Ge-Sb-Te alloys (GST) are considered to be one of the most suitable compounds for this application and are already widely used as non-volatile phase change memory in optical data storage and in first PRAM (Phase-change Random Access Memory) devices today [1, 2].
Schuck, Martin +6 more
openaire +1 more source
Progress in Modeling of III-Nitride MOVPE
Progress in Crystal Growth and Characterization of Materials, 2020exaly
Optimization of the MOVPE growth of GaN on sapphire
Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 1997O Briot, R L Aulombard
exaly
Thermodynamic study on phase separation during MOVPE growth of InxGa1−xN
Journal of Crystal Growth, 1998Hisashi Seki, Akinori Koukitu
exaly
Tertiarybutylhydrazine: a new precursor for the MOVPE of Group III-nitrides
Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 1999André Fielicke, Klaus Rademann
exaly
Deep structural analysis of novel BGaN material layers grown by MOVPE
Journal of Crystal Growth, 2011Konstantinos Pantzas +2 more
exaly
Influence of silane flow on MOVPE grown GaN on sapphire substrate by an in situ SiN treatment
Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 2004Sandrine Juillaguet +2 more
exaly