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MOVPE of crystalline Ge1Sb2Te4 (GST)
2014Chalcogenide phase change materials show significant promise on the road to an ideal memory. Ge-Sb-Te alloys (GST) are considered to be one of the most suitable compounds for this application and are already widely used as non-volatile phase change memory in optical data storage and in first PRAM (Phase-change Random Access Memory) devices today [1, 2].
Schuck, Martin +6 more
openaire +1 more source
Thermodynamic analysis on MOVPE growth of Ga1−xInxP semiconductor
Journal of Alloys and Compounds, 2003Changrong Li, Fuming Wang
exaly
Optimization of the MOVPE growth of GaN on sapphire
Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 1997O Briot, R L Aulombard
exaly
Thermodynamic study on phase separation during MOVPE growth of InxGa1−xN
Journal of Crystal Growth, 1998Akinori Koukitu, Hisashi Seki
exaly
Progress in Modeling of III-Nitride MOVPE
Progress in Crystal Growth and Characterization of Materials, 2020exaly
Influence of silane flow on MOVPE grown GaN on sapphire substrate by an in situ SiN treatment
Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 2004I Halidou, Z Benzarti, B El Jani
exaly