Results 171 to 180 of about 7,044 (217)
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Development of InAlAsSb growth by MOVPE
Journal of Crystal Growth, 2017Abstract The growth of InAlAsSb by metal-organic vapor phase epitaxy has been demonstrated, with a controllable antimony fraction exceeding 6%. Calculations have shown that InAlAsSb with Sb contents greater than 5–7% in the quaternary are within the miscibility gap, however this work demonstrates specific growth conditions that allow compositions ...
Michael Slocum +5 more
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MRS Internet Journal of Nitride Semiconductor Research, 1997
Mg has been widely used as p-doping species despite its intrinsic difficulties. It is nowadays well established that during the growth process of Mg doped GaN, atomic H is generated from the decomposition of NH3 and Mg-H complexes are formed in the layer.
S. Haffouz +6 more
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Mg has been widely used as p-doping species despite its intrinsic difficulties. It is nowadays well established that during the growth process of Mg doped GaN, atomic H is generated from the decomposition of NH3 and Mg-H complexes are formed in the layer.
S. Haffouz +6 more
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Mechanisms and results in MOVPE
Vacuum, 1990Abstract In this paper the relevant mechanisms for Metal Organic Vapour Phase Epitaxy (MOVPE) are summarized. The hydrodynamical aspects of gas phase transport are discussed but emphasis is put on the reaction routes leading to precursor decomposition and layer growth.
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1998
Abstract Finding a proper group III precursor for growth of nitrides is an easy thing, since well-suited molecules have been developed, purified, and tested for the growth of the other III-V materials. The ‘simplest’ trimethyl, triethyl molecules are widely available, in very high purities, but more complicated molecules were also ...
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Abstract Finding a proper group III precursor for growth of nitrides is an easy thing, since well-suited molecules have been developed, purified, and tested for the growth of the other III-V materials. The ‘simplest’ trimethyl, triethyl molecules are widely available, in very high purities, but more complicated molecules were also ...
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MOVPE of AlAsSb using tritertiarybutylaluminum
Journal of Crystal Growth, 1998Abstract We investigated the growth of AlAs 0.16 Sb 0.84 by using tritertiarybutylaluminum (TTBAl), tertiarybutylarsine (TBAs) and triethylantimony (TESb) as precursors. AlAs 0.16 Sb 0.84 layers, which are lattice-matched to InAs substrates, are used as cladding layers for Sb-based IR-lasers.
Ch Giesen, M.M Beerbom, X.G Xu, K Heime
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The MOVPE growth and doping of ZnTe
Semiconductor Science and Technology, 1991Zinc telluride layers have been grown on (100) GaAs, GaSb and ZnTe substrates at 350 degrees C with atmospheric pressure MOVPE. Diisopropyl-telluride, dimethylzinc-triethylamine and diethylzinc were chosen as metallorganic precursors. The samples were characterized by photoluminescence at 2 K and the Hall effect. In the PL spectra the light hole, heavy
W Kuhn +11 more
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Advances in MOVPE, MBE, and CBE
Journal of Crystal Growth, 1992Abstract In epitaxial growth technology, both metalorganic vapor phase epitaxy (MOVPE) and molecular beam epitaxy (MBE) have become the dominant techniques after more than two decades of development. On the horizon, it is the emerging of chemical beam epitaxy (CBE) which has been proven to be a very powerful combination of MOVPE and MBE.
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SPIE Proceedings, 2009
Challenges for the MOVPE growth of LED heterostructures for emission in the UV-A and UV-B spectral range are discussed. Special attention is given to the effects of strain in the In(Al)GaN active region as well as in the complete layer stack. Here in-situ monitoring of wafer bowing is shown to be an important tool for optimization of the growth ...
Arne Knauer +7 more
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Challenges for the MOVPE growth of LED heterostructures for emission in the UV-A and UV-B spectral range are discussed. Special attention is given to the effects of strain in the In(Al)GaN active region as well as in the complete layer stack. Here in-situ monitoring of wafer bowing is shown to be an important tool for optimization of the growth ...
Arne Knauer +7 more
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Advances in the modeling of MOVPE processes
Journal of Crystal Growth, 2003Abstract The paper reviews the progress in the modeling of metalorganic vapor phase epitaxy (MOVPE) of various III–V compounds. The recent studies focused on chemical gas-phase and surface phenomena have made possible the development of a global MOVPE model capable of predicting the growth rate and crystal composition within a 10% accuracy for some ...
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2010
In this chapter, growth mechanism of GaN and AlGaN by MOVPE is described in detail. The parasitic reaction that generates particulates in vapor phase is the most probable limiting factor of maximum growth rate of GaN and AlGaN. Both experimental and quantum chemical study of vapor phase reaction between organo-metals and ammonia is described.
K. Matsumoto +10 more
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In this chapter, growth mechanism of GaN and AlGaN by MOVPE is described in detail. The parasitic reaction that generates particulates in vapor phase is the most probable limiting factor of maximum growth rate of GaN and AlGaN. Both experimental and quantum chemical study of vapor phase reaction between organo-metals and ammonia is described.
K. Matsumoto +10 more
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