Results 171 to 180 of about 5,528 (229)
Progress in MOVPE growth of Ga2O3
, 2019 The metalorganic vapor-phase epitaxy (MOVPE) of gallium oxide is reviewed. It is shown that different Ga2O3 phases can be prepared by tuning the epitaxial growth parameters. The deposition temperature, partial pressure of the precursors, and crystallographic structure of the starting substrate/template are crucial in providing ?, ?, ?, and ? polymorph.
Fornari, Roberto
openaire +4 more sources
Quasi-thermodynamic analysis of MOVPE of AlGaN
Journal of Crystal Growth, 2000 A quasi-thermodynamic analysis of the MOVPE growth of AlxGa1-xN alloy using TMGa, TMA1 and ammonia has been proposed. The effect of varying growth conditions (growth temperature, reactor pressure, input V/III ratio, hydrogen pressure fraction in the ...
Da-Cheng Lu
exaly +1 more source
Some of the next articles are maybe not open access.
Related searches:
Related searches:
Progress in Crystal Growth and Characterization of Materials, 1997
Abstract The development of II–VI MOVPE is reviewed, contrasting the narrow bandgap materials with the wide bandgap. Common issues are the need to grow the layers at lower temperatures than their III–V cousins in order to avoid point defects. This means that II–VI MOVPE occurs in a surface kinetic regime for precursor decomposition and has stimulated
S J C IRVINE +4 more
openaire +1 more source
Abstract The development of II–VI MOVPE is reviewed, contrasting the narrow bandgap materials with the wide bandgap. Common issues are the need to grow the layers at lower temperatures than their III–V cousins in order to avoid point defects. This means that II–VI MOVPE occurs in a surface kinetic regime for precursor decomposition and has stimulated
S J C IRVINE +4 more
openaire +1 more source
Semiconductor Science and Technology, 1991
The critical steps in the development of MOVPE for the fabrication of MCT focal plane arrays (FPAs) are outlined. Improved purity of the source organometallics has enabled background donor concentrations in the mid 1014 cm-3 to be achieved, together with controlled back doping with donors or acceptors.
S J C Irvine +4 more
openaire +1 more source
The critical steps in the development of MOVPE for the fabrication of MCT focal plane arrays (FPAs) are outlined. Improved purity of the source organometallics has enabled background donor concentrations in the mid 1014 cm-3 to be achieved, together with controlled back doping with donors or acceptors.
S J C Irvine +4 more
openaire +1 more source
Fabrication of nanostructures using MBE and MOVPE
Physica Scripta, 1994Two different fabrication techniques to obtain nanometer scale structures without the use of lithography are demonstrated. Quantum dots are made on GaAs by growing strained InP islands by metal-organic vapour phase epitaxy. Quantum confinement of carriers is achieved by the growth of quantum wells on the InP islands.
Ahopelto, Jouni +7 more
openaire +1 more source
The growth of antimonides by MOVPE
Progress in Crystal Growth and Characterization of Materials, 1997Abstract There are three main reasons for the study of antimonides, they are the optical [mainly infrared], electrical [mainly Insb; the Gasb/Inas heterojunction] and structural [mainly ordering and spinodal decomposition] properties. These properties, together with the various techniques used to measure them, are discussed in the context of several ...
A. Aardvark, N.J. Mason, P.J. Walker
openaire +1 more source
physica status solidi (a), 2006
AbstractThis paper reports the in‐depth and in‐plane inhomogeneities in InN films. Samples of InN are grown on sapphire substrates without or with a buffer using the atmospheric‐pressure MOVPE. For the in‐depth inhomogeneity analysis, the conventional PL measurement using an excitation source with a different wavelength is made from both the front ...
Akio Yamamoto +3 more
openaire +1 more source
AbstractThis paper reports the in‐depth and in‐plane inhomogeneities in InN films. Samples of InN are grown on sapphire substrates without or with a buffer using the atmospheric‐pressure MOVPE. For the in‐depth inhomogeneity analysis, the conventional PL measurement using an excitation source with a different wavelength is made from both the front ...
Akio Yamamoto +3 more
openaire +1 more source
Journal of Crystal Growth, 1986
Ga1−xInxAs1−ySby alloys have been grown by metalorganic vapor phase epitaxy (MOVPE) using trimethyl compounds of Ga In, As, and Sb (TMGa, TMIn, TMAs, and TMSb) plus AsH3 in an atmospheric pressure, horizontal, infrared heated reactor.For the first time, alloys near the center of the region of solid immiscibility have been grown.
M.J. Cherng +5 more
openaire +1 more source
Ga1−xInxAs1−ySby alloys have been grown by metalorganic vapor phase epitaxy (MOVPE) using trimethyl compounds of Ga In, As, and Sb (TMGa, TMIn, TMAs, and TMSb) plus AsH3 in an atmospheric pressure, horizontal, infrared heated reactor.For the first time, alloys near the center of the region of solid immiscibility have been grown.
M.J. Cherng +5 more
openaire +1 more source
Microelectronic Engineering, 1992
Abstract In the field of optoelectronics the increasing complexity of components architecture requires a highly advanced and flexible growth technique. In this paper it will be demonstrated that by applying metalorganic vapor phase epitaxy (MOVPE) all requirements such as high speed, high performance, high yield, integrability, high throughput and ...
openaire +1 more source
Abstract In the field of optoelectronics the increasing complexity of components architecture requires a highly advanced and flexible growth technique. In this paper it will be demonstrated that by applying metalorganic vapor phase epitaxy (MOVPE) all requirements such as high speed, high performance, high yield, integrability, high throughput and ...
openaire +1 more source