Results 111 to 120 of about 7,044 (217)

Growth of inn/gan n-p structures by movpe and research. [PDF]

, 2017
Growth of InN/GaN N-P Structures by MOVPE and ...
Kolenda, Marek,
core  

Alumiinigalliumnitridin valmistus MOVPE-menetelmällä

, 2005
Tämä diplomityö käsittelee alumiinigalliumnitridin epitaktista valmistusta galliumnitridikerroksen päälle. Työ tehtiin Teknillisen korkeakoulun Optoelektroniikan laboratoriossa. AlGaN-kerrokset valmistettiin MOVPE-laitteistolla ja niiden ominaisuuksien
Svensk, Olli
core   +1 more source

OPTICAL AND STRUCTURAL-PROPERTIES OF AP-MOVPE GAINP/GAAS HETEROSTRUCTURES

, 1994
Lattice matched GaInP/GaAs heterostructures were grown by atmospheric pressure-metal organic vapor phase epitaxy (AP-MOVPE). Compositional intermixing of As/P and Ga/In near the heterointerfaces was studied by photoluminescence (PL) spectroscopy ...
HUANG BL, JIANG MH, ZHUANG WR, ZHENG WH, REN HW, REN HW SHANDONG UNIVINST CRYSTAL MATJINAN 250100PEOPLES R CHINA., XU XG, XU JY   +7 more
core  

Pattern Fidelity of Vertically Aligned GaAs Nanowire Arrays. [PDF]

Small
Koch J, Qiu J, Bohlemann CY, Ostheimer D, Zhao H, Kleinschmidt P, Lei Y, Hannappel T.   +7 more
europepmc   +1 more source

Sputtered AlN Buffer Layer for Low-Loss Crystalline AlN-on-Sapphire Integrated Photonics. [PDF]

ACS Photonics
Brunetta S, Sbarra S, Loke BSY, Carlin JF, Grandjean N, Brès CS, Butté R.   +6 more
europepmc   +1 more source

Manuale di utilizzo - Reattore MOVPE 3

, 2004
User manual of the reactor for large area III-V epitaxial depositionil rapporto interno descrive l'utilizzo del reattore epitassiale denominato "MOVPE 3" e finalizzato alla crescita su larga area di semiconduttori III ...
Claudio Pelosi, Giovanni Attolini, Matteo Bosi   +2 more
core  

Highly Oriented Epitaxial Hexagonal Boron Nitride Multilayers on High-Temperature-Resistant Single-Crystal Aluminum Nitride (0001). [PDF]

Adv Sci (Weinh)
Yang X, Pristovsek M, Nitta S, Honda Y, Ohtake A, Sakuma Y, Hiroto T, Ishida T, Ikezawa M, Guo Q, Amano H.   +10 more
europepmc   +1 more source

Supersaturation-Dependent Competition between β and κ Phases in the MOVPE Growth of Ga₂O₃ on Al₂O₃ (0001) and GaN (0001) Substrates. [PDF]

ACS Appl Mater Interfaces
Seravalli L, Ugolotti A, Bergamaschini R, Bosi M, Cora I, Mezzadri F, Mazzolini P, Cademartiri L, Bertoni I, Fogarassy Z, Pécz B, Bierwagen O, Ardenghi A, Leone S, Nasi L, Miglio L, Fornari R.   +16 more
europepmc   +1 more source

Quantum walk comb in a dual waveguide quantum cascade laser. [PDF]

Nat Commun
Cargioli A, Montesinos Ballester M, Gantner S, Gini E, Beck M, Faist J.   +5 more
europepmc   +1 more source

SIMS Investigation of Al Diffusion Across Interfaces in AlGaN/GaN and AlN/GaN Heterostructures. [PDF]

Nanomaterials (Basel)
Laifi J, Hasaneen MF, Bchetnia A.
europepmc   +1 more source