Results 111 to 120 of about 11,730 (206)

Nitride MOVPE tops the bill

III-Vs Review, 1999
AbstractThe predominance of activity in the nitrides field and the emergence of in situ monitoring into mainstream metal organic vapour phase epitaxy were among the themes of the 8th European Workshop on MOVPE. The location of Prague close to the geographical centre of the united Europe did much to encourage participation from all corners of the ...
openaire   +1 more source

AlGaAs VSCELs grown on thin 150 mm germanium substrates

JPhys Photonics
To reduce material usage and minimise device cost the use of reduced substrate thickness is considered in high volume vertical-cavity surface-emitting laser (VCSEL) manufacturing.
S J Gillgrass, J Baker, C P Allford, J I Davies, S Shutts, P M Smowton   +5 more
doaj   +1 more source

Strain-Compensated AlInGaAs-GaAsP Superlattices for Highly-Polarized Electron Emission

, 2004
Spin-polarized electron emission from the first superlattice photocathodes developed with strain compensation is investigated. An opposite strain in the quantum well and barrier layers is complished using an InAlGaAs/GaAsP superlattice structure.
Clendenin, J. E., Gerchikov, L. G., Luh, D. -A., Mamaev, Yu. A., Maruyama, T., Roberts, J. S., Subashiev, A. V., Yashin, Yu. P.   +7 more
core   +2 more sources

CALCULATION OF GROWTH RATES AND COMPOSITIONS OF NANOLAYERS In_XGa_1-XAs ON A InP SUBSTRATE USING A 3D MODEL OF A HORIZONTAL MOVPE REACTOR

Тонкие химические технологии, 2013
A three-dimensional (3D) detailed heat, mass and momentum transfer model was constructed to describe the thermal behavior, fluid dynamics and the diffusion in a horizontal metal-organic vapor-phase epitaxy (MOVPE) reactor with a rectangular section and a
A. A. Gorskiy, L. B. Berliner, E. V. Titova   +2 more
doaj  

MOVPE Growth and Doping Optimization of n-AlGaAs Layers for Laser Diode Applications

Cumhuriyet Science Journal
Epitaxial n-AlₓGa₁₋ₓAs layers, which form the basis of semiconductor laser structures, play a critical role in both optical and electrical performance of the device.
İlkay Demir, Gamze Yolcu
doaj   +1 more source

Prototypes of Highly Effective Stress Balancing AlN Interlayers in MOVPE GaN-on-Si (111)

Inorganics
The GaN-on-Si virtual substrate is now an indispensable platform for the application of GaN in the fields of power devices, radio frequency, light-emitting devices, etc. Such applications are still in need of more effective stress balancing techniques to
Cai Liu, Gaomin Li, Hassanet Sodabanlu, Masakazu Sugiyama, Yoshiaki Nakano   +4 more
doaj   +1 more source

Pattern Fidelity of Vertically Aligned GaAs Nanowire Arrays. [PDF]

Small
Koch J, Qiu J, Bohlemann CY, Ostheimer D, Zhao H, Kleinschmidt P, Lei Y, Hannappel T.   +7 more
europepmc   +1 more source

Sputtered AlN Buffer Layer for Low-Loss Crystalline AlN-on-Sapphire Integrated Photonics. [PDF]

ACS Photonics
Brunetta S, Sbarra S, Loke BSY, Carlin JF, Grandjean N, Brès CS, Butté R.   +6 more
europepmc   +1 more source

Highly Oriented Epitaxial Hexagonal Boron Nitride Multilayers on High-Temperature-Resistant Single-Crystal Aluminum Nitride (0001). [PDF]

Adv Sci (Weinh)
Yang X, Pristovsek M, Nitta S, Honda Y, Ohtake A, Sakuma Y, Hiroto T, Ishida T, Ikezawa M, Guo Q, Amano H.   +10 more
europepmc   +1 more source

Supersaturation-Dependent Competition between β and κ Phases in the MOVPE Growth of Ga₂O₃ on Al₂O₃ (0001) and GaN (0001) Substrates. [PDF]

ACS Appl Mater Interfaces
Seravalli L, Ugolotti A, Bergamaschini R, Bosi M, Cora I, Mezzadri F, Mazzolini P, Cademartiri L, Bertoni I, Fogarassy Z, Pécz B, Bierwagen O, Ardenghi A, Leone S, Nasi L, Miglio L, Fornari R.   +16 more
europepmc   +1 more source