Results 111 to 120 of about 5,528 (229)

Growth of semiconducting heterostructures by MOVPE

, 2008
The lecture focuses on properties, preparation and in-situ characterization of semiconducting heterostructures prepared by MOVPE ...
Hulicius, Eduard
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Nucleation studies of MOVPE grown antimonides

, 1995
MOVPE - metalorganic vapour phase epitaxyAvailable from British Library Document Supply Centre-DSC:D193107 / BLDSC - British Library Document Supply CentreSIGLEGBUnited ...
Graham, R.M.
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MOVPE生长的GaN基蓝色与绿色LED

, 2001
报道用自行研制的LP-MOVPE设备,在蓝宝石(α-Al_2O_3)衬底上生长出以InGaN为有源区的蓝光和绿光InGaN/AlGaN双异质结构以及InGaN/GaN量子阱结构的LED,其发射波长分别为430～450nm和520 ...
陆大成, 王晓晖, 汪度, 韩培德, 袁海荣, 刘祥林   +5 more
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1.5 mu m DFB integrated with vertical tapered spotsize converter fabricated by selective MOVPE

, 2002
1.5 mu m DFB LD butt-joint integrated with vertical tapered spotsize converter was fabricated by LP-MOVPE. The vertical far field angle (FWHM) was decreased from 34degrees to 10degrees the threshold currents was as low as 19.8mA, the output power was 9 ...
Qiu WB Chinese Acad Sci Natl Res Ctr Optoelect Technol Inst Semicond POB 912 Beijing 100083 Peoples R China., Zhang JY, Dong J, Wang W, Qiu WB, Zhou F, Zhu HL   +6 more
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Pattern Fidelity of Vertically Aligned GaAs Nanowire Arrays. [PDF]

Small
Koch J, Qiu J, Bohlemann CY, Ostheimer D, Zhao H, Kleinschmidt P, Lei Y, Hannappel T.   +7 more
europepmc   +1 more source

Numerical Simulation of III-V Solar Cells Using D-AMPS

, 2010
Numerical simulation of devices plays a crucial role in their design, performance prediction, and comprehension of the fundamental phenomena ruling their operation.
Rey-Stolle Prado, Ignacio, Barrera, M., Plá, J., Rubinelli, F.   +3 more
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Sputtered AlN Buffer Layer for Low-Loss Crystalline AlN-on-Sapphire Integrated Photonics. [PDF]

ACS Photonics
Brunetta S, Sbarra S, Loke BSY, Carlin JF, Grandjean N, Brès CS, Butté R.   +6 more
europepmc   +1 more source

注入电流对MOVPE生长GaAs薄层光透射特性的影响

, 1991
本文报道MOVPE生长不掺杂GaAs薄层对线偏振光和自然光的透射特性,详细介绍注入电流对光透射特性的影响。中国科学引文数据库(CSCD)005608 ...
段树坤, 王威礼, 李桂棠, 王德煌   +3 more
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Highly Oriented Epitaxial Hexagonal Boron Nitride Multilayers on High-Temperature-Resistant Single-Crystal Aluminum Nitride (0001). [PDF]

Adv Sci (Weinh)
Yang X, Pristovsek M, Nitta S, Honda Y, Ohtake A, Sakuma Y, Hiroto T, Ishida T, Ikezawa M, Guo Q, Amano H.   +10 more
europepmc   +1 more source

Characteristics of oxide-free InGaAlAs layers grown by narrow stripe selective MOVPE

, 2005
Narrow stripe selective MOVPE has been used to grow high quality oxide-free InGaAlAs layers on an InP substrate patterned with SiO2 masks at optimized growth conditions.
Zhao LJ, Pan JQ, Hou LP, Feng W, Wang W, Feng, W, Chinese Acad Sci, Inst Semicond, Optoelect Res & Dev Ctr, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: wfeng@semi.ac.cn, Zhu HL   +6 more
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