Results 91 to 100 of about 5,528 (229)

MOVPE growth of long wavelength AlGaAsSb∕InP Bragg mirrors

, 2004
International audienceMonolithic Distributed Bragg reflectors (DBRs) consisting of AlGaAsSb/InP quarterwave multilayer were grown by Metal-Organic Vapor-Phase Epitaxy (MOVPE) on InP substrates.
Haiml, M., Gini, E., Almuneau, Guilhem, Bächtold, W., Ostinelli, O., Ebnöther, M.   +5 more
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CBVB-nH complexes as prevalent defects in metal-organic vapor-phase epitaxy-grown hexagonal boron nitride

npj 2D Materials and Applications
Optically active defects in hexagonal boron nitride (hBN) are promising candidates for active components in emerging quantum technologies, such as single-photon emitters and spin centers.
Marek Maciaszek, Bartłomiej Baur
doaj   +1 more source

Very high purity InP layers grown by adduct-MOVPE

, 2022
S.691-2Using the adduct compound trimethylindium-trimethylphosphine (TMIn-TMP) very high purity InP layers have been grown by atmospheric pressure MOVPE (AP-MOVPE).
Schumann, H., Reier, F.W., Wolfram, P., Franke, D.   +3 more
core  

Growth of one-dimensional nanostructures in MOVPE

, 2004
The use of metal organic vapor-phase epitaxy (MOVPE) for growth of one-dimensional nanostructures in the material systems GaAs, GaP, InAs and InP is investigated.
Svensson, C Patrik T, Mårtensson, Thomas,, Wallenberg, Reine,, Johansson, Jonas, Dick Thelander, Kimberly, Larsson, Magnus,, Wacaser, Brent, Samuelson, Lars,, Dick Thelander, Kimberly,, Borgström, Magnus,, Sköld, Niklas,, Wacaser, Brent,, Wallenberg, Reine, Deppert, Knut,, Seifert, Werner, Deppert, Knut, Mårtensson, Thomas, Borgström, Magnus, Samuelson, Lars, Johansson, Jonas,, Lund University., Sköld, Niklas, Seifert, Werner,, Larsson, Magnus   +23 more
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The Photoionization Processes of Deep Trap Levels in n-GaN Films Grown by MOVPE Technique on Ammono-GaN Substrates

Applied Sciences
In this paper, we present various theoretical models that accurately approximate the spectral density of the optical capture cross-section (σe0) obtained through the analysis of photo-capacitance transients using the deep-level optical spectroscopy (DLOS)
Piotr Kruszewski, Konrad Sakowski, Krzysztof Gościński, Paweł Prystawko   +3 more
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ZnSe的MOVPE生长相图以DMZn和H2Se为源

, 1996
基于热力学平衡计算,首次给出以DMZn和H_2Se为源,MOVPE生长ZnSe的相图.文中讨论了ZnSe单一凝聚相区的范围,以及可能出ZnSe(s)+Zn(s)或ZnSe(s)+Se(1 ...
陆大成, 段树坤
core  

In-situ controls for MOVPE manufacturing

, 1996
Much of the early research that established MOVPE was done with simple, single-wafer systems. Uniformity and reproducibility were not show-stoppers — developing the precursors, growth processes and device fabrication techniques were more important.
Stall, R.A., Armour, E., Zawadzki, P., Kroll, W., Thompson, Alan G., Karlicek, R.   +5 more
core   +1 more source

AlGaAs VSCELs grown on thin 150 mm germanium substrates

JPhys Photonics
To reduce material usage and minimise device cost the use of reduced substrate thickness is considered in high volume vertical-cavity surface-emitting laser (VCSEL) manufacturing.
S J Gillgrass, J Baker, C P Allford, J I Davies, S Shutts, P M Smowton   +5 more
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CALCULATION OF GROWTH RATES AND COMPOSITIONS OF NANOLAYERS In_XGa_1-XAs ON A InP SUBSTRATE USING A 3D MODEL OF A HORIZONTAL MOVPE REACTOR

Тонкие химические технологии, 2013
A three-dimensional (3D) detailed heat, mass and momentum transfer model was constructed to describe the thermal behavior, fluid dynamics and the diffusion in a horizontal metal-organic vapor-phase epitaxy (MOVPE) reactor with a rectangular section and a
A. A. Gorskiy, L. B. Berliner, E. V. Titova   +2 more
doaj  

Nitride MOVPE tops the bill

III-Vs Review, 1999
AbstractThe predominance of activity in the nitrides field and the emergence of in situ monitoring into mainstream metal organic vapour phase epitaxy were among the themes of the 8th European Workshop on MOVPE. The location of Prague close to the geographical centre of the united Europe did much to encourage participation from all corners of the ...
openaire   +1 more source