Results 91 to 100 of about 7,044 (217)

CBVB-nH complexes as prevalent defects in metal-organic vapor-phase epitaxy-grown hexagonal boron nitride

npj 2D Materials and Applications
Optically active defects in hexagonal boron nitride (hBN) are promising candidates for active components in emerging quantum technologies, such as single-photon emitters and spin centers.
Marek Maciaszek, Bartłomiej Baur
doaj   +1 more source

Heat Dissipation Schemes in AlInAs/InGaAs/InP Quantum Cascade Lasers Monitored by CCD Thermoreflectance

Photonics, 2017
In this paper, we report on the experimental investigation of the thermal performance of lattice matched AlInAs/InGaAs/InP quantum cascade lasers. Investigated designs include double trench, single mesa, and buried heterostructures, which were grown by ...
Dorota Pierścińska, Kamil Pierściński, Piotr Gutowski, Mikołaj Badura, Grzegorz Sobczak, Olga Serebrennikova, Beata Ściana, Marek Tłaczała, Grzegorz Sobczak, Maciej Bugajski   +9 more
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The Photoionization Processes of Deep Trap Levels in n-GaN Films Grown by MOVPE Technique on Ammono-GaN Substrates

Applied Sciences
In this paper, we present various theoretical models that accurately approximate the spectral density of the optical capture cross-section (σe0) obtained through the analysis of photo-capacitance transients using the deep-level optical spectroscopy (DLOS)
Piotr Kruszewski, Konrad Sakowski, Krzysztof Gościński, Paweł Prystawko   +3 more
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GROWTH OF GASB AND GAASSB IN THE SINGLE-PHASE REGION BY MOVPE

, 1992
GaSb layers are grown on GaSb substrates; the effects of input partial pressure of trimethylantimony and the V/III ratio are studied. A model of the MOVPE phase diagram for the growth of GaSb and GaAsxSb1-x is developed which assumes thermodynamic ...
LU DC, LIU XL, LIN LY, WANG D, LU DC CHINESE ACAD SCIINST SEMICONDSEMICOND MAT SCI LABPOB 912BEIJING 100083PEOPLES R CHINA   +4 more
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CALCULATION OF GROWTH RATES AND COMPOSITIONS OF NANOLAYERS In_XGa_1-XAs ON A InP SUBSTRATE USING A 3D MODEL OF A HORIZONTAL MOVPE REACTOR

Тонкие химические технологии, 2013
A three-dimensional (3D) detailed heat, mass and momentum transfer model was constructed to describe the thermal behavior, fluid dynamics and the diffusion in a horizontal metal-organic vapor-phase epitaxy (MOVPE) reactor with a rectangular section and a
A. A. Gorskiy, L. B. Berliner, E. V. Titova   +2 more
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AlGaAs VSCELs grown on thin 150 mm germanium substrates

JPhys Photonics
To reduce material usage and minimise device cost the use of reduced substrate thickness is considered in high volume vertical-cavity surface-emitting laser (VCSEL) manufacturing.
S J Gillgrass, J Baker, C P Allford, J I Davies, S Shutts, P M Smowton   +5 more
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Growth of semiconducting heterostructures by MOVPE

, 2008
The lecture focuses on properties, preparation and in-situ characterization of semiconducting heterostructures prepared by MOVPE ...
Hulicius, Eduard
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Polarity of Hexagonal GaN Grown on GaAs (111)A and (111)B Surfaces by HVPE and Movpe

, 2000
Summary:Dependence of hexagonal GaN polarity on the polarity of GaAs (111) substrates was investigated by CAICISS for HVPE and MOVPE. Although polarity of MOVPE GaN followed the polarity of GaAs substrate; Ga polar for (111)A and N polar for (111)B, both
M. Namerikawa, F. Hasegawa, O. Takahashi, T. Suemasu, R. Souda, H. Tanaka   +5 more
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Nucleation studies of MOVPE grown antimonides

, 1995
MOVPE - metalorganic vapour phase epitaxyAvailable from British Library Document Supply Centre-DSC:D193107 / BLDSC - British Library Document Supply CentreSIGLEGBUnited ...
Graham, R.M.
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ZnSe的MOVPE生长相图以DMZn和H2Se为源

, 1996
基于热力学平衡计算,首次给出以DMZn和H_2Se为源,MOVPE生长ZnSe的相图.文中讨论了ZnSe单一凝聚相区的范围,以及可能出ZnSe(s)+Zn(s)或ZnSe(s)+Se(1 ...
陆大成, 段树坤
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