Results 91 to 100 of about 6,729 (212)

GROWTH OF GASB AND GAASSB IN THE SINGLE-PHASE REGION BY MOVPE

, 1992
GaSb layers are grown on GaSb substrates; the effects of input partial pressure of trimethylantimony and the V/III ratio are studied. A model of the MOVPE phase diagram for the growth of GaSb and GaAsxSb1-x is developed which assumes thermodynamic ...
LU DC, LIU XL, LIN LY, WANG D, LU DC CHINESE ACAD SCIINST SEMICONDSEMICOND MAT SCI LABPOB 912BEIJING 100083PEOPLES R CHINA   +4 more
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OPTICAL AND STRUCTURAL-PROPERTIES OF AP-MOVPE GAINP/GAAS HETEROSTRUCTURES

, 1994
Lattice matched GaInP/GaAs heterostructures were grown by atmospheric pressure-metal organic vapor phase epitaxy (AP-MOVPE). Compositional intermixing of As/P and Ga/In near the heterointerfaces was studied by photoluminescence (PL) spectroscopy ...
HUANG BL, JIANG MH, ZHUANG WR, ZHENG WH, REN HW, REN HW SHANDONG UNIVINST CRYSTAL MATJINAN 250100PEOPLES R CHINA., XU XG, XU JY   +7 more
core  

AlGaAs VSCELs grown on thin 150 mm germanium substrates

JPhys Photonics
To reduce material usage and minimise device cost the use of reduced substrate thickness is considered in high volume vertical-cavity surface-emitting laser (VCSEL) manufacturing.
S J Gillgrass, J Baker, C P Allford, J I Davies, S Shutts, P M Smowton   +5 more
doaj   +1 more source

Nitride MOVPE tops the bill

III-Vs Review, 1999
AbstractThe predominance of activity in the nitrides field and the emergence of in situ monitoring into mainstream metal organic vapour phase epitaxy were among the themes of the 8th European Workshop on MOVPE. The location of Prague close to the geographical centre of the united Europe did much to encourage participation from all corners of the ...
openaire   +1 more source

Numerical Simulation of III-V Solar Cells Using D-AMPS [PDF]

, 2010
Numerical simulation of devices plays a crucial role in their design, performance prediction, and comprehension of the fundamental phenomena ruling their operation.
Rey-Stolle Prado, Ignacio, Barrera, M., Plá, J., Rubinelli, F.   +3 more
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CALCULATION OF GROWTH RATES AND COMPOSITIONS OF NANOLAYERS In_XGa_1-XAs ON A InP SUBSTRATE USING A 3D MODEL OF A HORIZONTAL MOVPE REACTOR

Тонкие химические технологии, 2013
A three-dimensional (3D) detailed heat, mass and momentum transfer model was constructed to describe the thermal behavior, fluid dynamics and the diffusion in a horizontal metal-organic vapor-phase epitaxy (MOVPE) reactor with a rectangular section and a
A. A. Gorskiy, L. B. Berliner, E. V. Titova   +2 more
doaj  

MOVPE Growth and Doping Optimization of n-AlGaAs Layers for Laser Diode Applications

Cumhuriyet Science Journal
Epitaxial n-AlₓGa₁₋ₓAs layers, which form the basis of semiconductor laser structures, play a critical role in both optical and electrical performance of the device.
İlkay Demir, Gamze Yolcu
doaj   +1 more source

Hall sensors based on GaAs structures obtained by low-temperature LPE from Bi melts

Технологія та конструювання в електронній апаратурі, 2002
The features of obtaining s. i.-GaAs—n-GaAs:Sn epitaxial structures for Hall sensors by the low-temperature "bismuth" liquid phase epitaxy (LPE) method are considered.
M. M. Vakiv, S. I. Krukovskyi, I. R. Zaverbnyi, I. A. Mrykhin   +3 more
doaj  

ZnSe的MOVPE生长相图以DMZn和H2Se为源

, 1996
基于热力学平衡计算,首次给出以DMZn和H_2Se为源,MOVPE生长ZnSe的相图.文中讨论了ZnSe单一凝聚相区的范围,以及可能出ZnSe(s)+Zn(s)或ZnSe(s)+Se(1 ...
陆大成, 段树坤
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Alumiinigalliumnitridin valmistus MOVPE-menetelmällä

, 2005
Tämä diplomityö käsittelee alumiinigalliumnitridin epitaktista valmistusta galliumnitridikerroksen päälle. Työ tehtiin Teknillisen korkeakoulun Optoelektroniikan laboratoriossa. AlGaN-kerrokset valmistettiin MOVPE-laitteistolla ja niiden ominaisuuksien
Svensk, Olli
core   +1 more source