Results 91 to 100 of about 11,730 (206)

Electron Channeling Contrast Imaging for the Characterization of Dislocations in III−V Thin Films on Silicon (001)

physica status solidi (a), Volume 223, Issue 2, January 2026.
Defect characterization plays a crucial role in semiconductor research, yet the development of fast, cheap, and nondestructive tools remains challenging. This work applies electron channeling contrast imaging (ECCI) to III–V thin films on silicon, examining beam parameters and diffraction conditions.
Laura Monge‐Bartolome, Paula Mouriño Miñambres, Alicia Peiro Codoñer, Miguel Sinusia Lozano, Zhao Yan, Ivan Garcia Vara, Thierry Baron, Qiang Li, Víctor J. Gómez   +8 more
wiley   +1 more source

Revealing polytypism in 2D boron nitride with UV photoluminescence

npj 2D Materials and Applications
Boron nitride exhibits various crystal structures. The subgroup of layered boron nitrides includes several polytypes such as hexagonal (hBN), Bernal (bBN), and rhombohedral (rBN) BN.
Jakub Iwański, Krzysztof P. Korona, Mateusz Tokarczyk, Grzegorz Kowalski, Aleksandra K. Dąbrowska, Piotr Tatarczak, Izabela Rogala, Marta Bilska, Maciej Wójcik, Sławomir Kret, Anna Reszka, Bogdan J. Kowalski, Song Li, Anton Pershin, Adam Gali, Johannes Binder, Andrzej Wysmołek   +16 more
doaj   +1 more source

Development and operation of research-scale III-V nanowire growth reactors

, 2010
III-V nanowires are useful platforms for studying the electronic and mechanical properties of materials at the nanometer scale. However, the costs associated with commercial nanowire growth reactors are prohibitive for most research groups.
A. M. Bergman, J. R. Petta, M. D. Schroer, Park H. D., S. Y. Xu, Stringfellow G. B., Yakobson B. I.   +6 more
core   +1 more source

In Situ 4D STEM of LiNiO2 Particles Heated in an Oxygen Atmosphere: Toward Investigation of Solid‐State Batteries Under Realistic Processing Conditions

Small Methods, Volume 10, Issue 2, 22 January 2026.
An experimental protocol, including sample preparation and experimental setup, for heating large, thinned cathode active material particles in situ in an oxygen atmosphere is presented. Using 4D scanning transmission electron microscopy nanobeam diffraction and ex situ measurements, the structural evolution of LiNiO2 during heating in oxygen is ...
Thomas Demuth, Shamail Ahmed, Philipp Kurzhals, Johannes Haust, Jürgen Belz, Andreas Beyer, Jürgen Janek, Kerstin Volz   +7 more
wiley   +1 more source

All MOVPE Grown Quadruple Junction InGaP/InGaAs/Ge/Ge Solar Cell

Crystals
Most commercially available InGaP/InGaAs/Ge triple-junction solar cells suffer from current mismatch due to the excess current generated by the Ge sub-cell.
Gianluca Timò, Marco Calicchio, Elisabetta Achilli, Nicola Armani, Filippo Annoni, Franco Trespidi, Mario V. Imperatore, Edoardo Celi, Alessandro Minuto   +8 more
doaj   +1 more source

Ferromagnetism in (In,Mn)As Diluted Magnetic Semiconductor Thin Films Grown by Metalorganic Vapor Phase Epitaxy

, 2002
In1-xMnxAs diluted magnetic semiconductor (DMS) thin films have been grown using metalorganic vapor phase epitaxy (MOVPE). Tricarbonyl(methylcyclopentadienyl)manganese was used as the Mn source.
A. J. Blattner, B. W. Wessels, Bean, Blattner, Chernenko, De Boeck, Dietl, Dietl, Haneda, Munekata, Ohno, Ohno, Ohno, Overberg, Pytlik, Reed, Soo, Soo, van Schilfgaarde, von Molnar   +19 more
core   +1 more source

Significant Carrier Extraction Enhancement at the Interface of an InN/p-GaN Heterojunction under Reverse Bias Voltage

Nanomaterials, 2018
In this paper, a superior-quality InN/p-GaN interface grown using pulsed metalorganic vapor-phase epitaxy (MOVPE) is demonstrated. The InN/p-GaN heterojunction interface based on high-quality InN (electron concentration 5.19 × 1018 cm−3 and ...
Vladimir Svrcek, Marek Kolenda, Arunas Kadys, Ignas Reklaitis, Darius Dobrovolskas, Tadas Malinauskas, Mickael Lozach, Davide Mariotti, Martin Strassburg, Roland Tomašiūnas   +9 more
doaj   +1 more source

AlGaAs/GaAs/AlGaAs quantum wells as a sensitive tool for the MOVPE reactor environment

, 2010
We present in this work a simple Quantum Well (QW) structure consisting of GaAs wells with AlGaAs barriers as a probe for measuring the performance of arsine purifiers within a MetalOrganic Vapour Phase Epitaxy system.
Atlasov, Baier, Bastard, Cao, Chua, Chui, Dupuis, E. Pelucchi, Esser, Eytan, Feng, Funke, Gallo, Giannoules, Grosse, Gurioli, L.O. Mereni, Leu, Levy, Meier, Merano, Mereni, Moret, Pelucchi, Pelucchi, R.J. Young, Richter, Roberts, Ropers, Rudra, Sanvitto, Savona, Shinohara, Sirigu, Troccoli, V. Dimastrodonato, van der Ziel, Zhu, Zimmermann   +38 more
core   +1 more source

Tuning emission energy and fine structure splitting in quantum dots emitting in the telecom O-band

AIP Advances, 2019
We report on optical investigations of MOVPE-grown InGaAs/GaAs quantum dots emitting at the telecom O-band that were integrated onto uniaxial piezoelectric actuators. This promising technique, which does not degrade the emission brightness of the quantum
B. Höfer, F. Olbrich, J. Kettler, M. Paul, J. Höschele, M. Jetter, S. L. Portalupi, F. Ding, P. Michler, O. G. Schmidt   +9 more
doaj   +1 more source

Stretching magnetism with an electric field in a nitride semiconductor

, 2016
By direct magnetization measurements, performed employing a new detection scheme, we demonstrate an electrical control of magnetization in wurtzite (Ga,Mn)N.
Adhikari, R., Bonanni, A., Dietl, T., Foltyn, M., Gas, K., Jakiela, R., Kosiel, K., Kruszka, R., Li, Tian, Mazur, G. P., Piotrowska, A., Sawicki, M., Sztenkiel, D., Zgirski, M.   +13 more
core   +1 more source