Results 61 to 70 of about 11,730 (206)

Optical properties of epitaxially grown GaN:Ge thin films

Optical Materials: X, 2022
To better understand the scintillation properties of gallium nitride, a detailed characterization of Metal Organic Vapour Phase Epitaxy (MOVPE) grown GaN layers doped with Ge is conducted.
M. Buryi, V. Babin, T. Hubáček, V. Jarý, F. Hájek, K. Kuldová, Z. Remeš, A. Hospodková   +7 more
doaj   +1 more source

Quantum Emitters in Hexagonal Boron Nitride: Principles, Engineering and Applications

Advanced Functional Materials, Volume 36, Issue 20, 9 March 2026.
Quantum emitters in hexagonal boron nitride have emerged as a promising candidate for quantum information science. This review examines the fundamentals of these quantum emitters, including their level structures, defect engineering, and their possible chemical structures.
Thi Ngoc Anh Mai, Md Shakhawath Hossain, Nhat Minh Nguyen, Yongliang Chen, Chaohao Chen, Xiaoxue Xu, Quang Thang Trinh, Toan Dinh, Toan Trong Tran   +8 more
wiley   +1 more source

Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE

Scientific Reports, 2017
Practical boron nitride (BN) detector applications will require uniform materials over large surface area and thick BN layers. To report important progress toward these technological requirements, 1~2.5 µm-thick BN layers were grown on 2-inch sapphire ...
Xin Li, Matthew B. Jordan, Taha Ayari, Suresh Sundaram, Youssef El Gmili, Saiful Alam, Muhbub Alam, Gilles Patriarche, Paul L. Voss, Jean Paul Salvestrini, Abdallah Ougazzaden   +10 more
doaj   +1 more source

Coherently coupled photonic-crystal surface-emitting laser array [PDF]

, 2015
The realization of a 1 × 2 coherently coupled photonic crystal surface emitting laser array is reported.
Babazadeh, Nasser, Childs, David T.D., Crombie, Alex J., Hogg, Richard A., Ivanov, Pavlo, Khamas, Salam, Li, Guangrui, Sarma, Jayanta, Stevens, Ben J., Taylor, Richard J.E., Ternent, Gary, Thoms, Stephen, Zhou, Haiping   +12 more
core   +1 more source

Composition and Resulting Band Alignment at the TiO2/InP Heterointerface: A Fundamental Study Combining Photoemission Spectroscopy and Theory

Advanced Functional Materials, Volume 36, Issue 21, 12 March 2026.
The chemical composition and band alignment are systematically investigated at the TiO2/InP heterointerface. Thin TiO2 films are deposited by ALD on atomically ordered, P‐terminated p‐InP(100). By combining UPS, XPS, and ab initio molecular dynamics, the atomistic structure and electronic alignment are revealed.
Mohammad Amin Zare Pour, Muhammad Nawaz Qaisrani, Christian Höhn, Johannes Laurenz Wolf, Negin Mogharehabed, Jennifer Velazquez Rojas, Wolfram Jaegermann, Erich Runge, Roel van de Krol, Thomas Hannappel, Christian Dreßler, Agnieszka Paszuk   +11 more
wiley   +1 more source

Deterministic hBN Bubbles as a Versatile Platform for Studies on Single‐Photon Emitters

Advanced Functional Materials, Volume 36, Issue 24, 23 March 2026.
Single‐photon emitters (SPEs) in hBN are promising for quantum technologies; however, in exfoliated samples their activation is required, limiting reproducibility of previous studies. This work introduces a large‐area MOVPE‐grown hBN platform that hosts SPEs without prior activation.
Piotr Tatarczak, Tomasz Fąs, Jan Pawłowski, Aleksandra Krystyna Dąbrowska, Jan Suffczyński, Mateusz Tokarczyk, Piotr Wróbel, Andrzej Wysmołek, Johannes Binder   +8 more
wiley   +1 more source

Vacancy‐Type Defects in n‐Type GaN Fabricated by Low‐Dose Ion Implantation Studied by a Monoenergetic Positron Beam

physica status solidi (b), Volume 263, Issue 3, March 2026.
Vacancies in low‐dose ion‐implanted GaN are studied by positron annihilation. Depth profiles of the net donor concentration (ND) are close to those for implanted impurities, but ND is 2–3 times higher than concentrations of implanted ions. The origin of donor‐like defects is expected to be N‐vacancy‐related defects, and Ga‐vacancy‐type defects play a ...
Akira Uedono, Hiroko Iguchi, Masahiro Horita, Jun Suda, Kohei Shima, Shigefusa F. Chichibu, Shoji Ishibashi   +6 more
wiley   +1 more source

In-Situ Preparation of GaN Sacrificial Layers on Sapphire Substrate in MOVPE Reactor for Self-Separation of the Overgrown GaN Crystal

Crystals, 2020
GaN layers on sapphire substrates were prepared by using metal organic vapor phase epitaxy (MOVPE) combined with an in-situ H2 etching process for the purpose of later self-separation of thick GaN crystals produced by hydride vapor phase epitaxy (HVPE ...
Sepideh Faraji, Elke Meissner, Roland Weingärtner, Sven Besendörfer, Jochen Friedrich   +4 more
doaj   +1 more source

High‐Temperature Operation of All‐Molecular Beam Epitaxy InAs/GaAs Quantum Dot Lasers on V‐Grooved Si (001)

physica status solidi (a), Volume 223, Issue 4, 24 February 2026.
We demonstrate thermally reliable all‐MBE InAs/GaAs quantum dot lasers directly grown on V‐grooved Si (001). By preventing V‐groove deformation and eliminating micro‐cracks, the device achieves a maximum pulsed operating temperature of 150°C. This establishes a robust, scalable platform for monolithic Si photonics.
Jun Li, Haotian Zeng, Lifeng Bao, Jae‐Seong Park, Chong Chen, Yangqian Wang, Hexing Wang, Kongming Liu, Yutong Zhang, Makhayeni Mtunzi, Huiwen Deng, Hui Jia, Frederic Gardes, Jeremy Moeyaert, Thierry Baron, Mingchu Tang, Alwyn Seeds, Huiyun Liu   +17 more
wiley   +1 more source

Status of Ultra-High Concentrator Multijunction Solar Cell Development at IES-UPM. [PDF]

, 2010
After the successful implementation of a record performing dual-junction solar cell at ultra high concentration, in this paper we present the optimization of key aspects in the transition to a triple-junction device, namely the hetero nucleation of III-V
Algora del Valle, Carlos, Barrigón Montañés, Enrique, Espinet González, Pilar, Garcia Tabares Valdivieso, Elisa, García Vara, Iván, Rey-Stolle Prado, Ignacio   +5 more
core   +1 more source