Results 61 to 70 of about 7,044 (217)
Laser &Photonics Reviews, Volume 20, Issue 7, 6 April 2026.A heterogeneous III‐V/SiN platform for lasers at 800 nm is realized using the micro‐transfer printing method. Efficient GaAs gain sections are directly butt‐coupled to SiN waveguides, enabling continuous‐wave and mode‐locked extended‐cavity lasers. The mode‐locked lasers generate highly stable pulse trains with repetition rates up to 9.2 GHz and a ...
Max Kiewiet +13 more
wiley +1 more source
Spectroscopic Characterization of GaAs and AlxGa1 – xAs / AlyGa1 – yAs Quantum Well Heterostructures [PDF]
Журнал нано- та електронної фізики, 2013 This work presents the results of the characterization of GaAs and AlxGa1 – xAs / AlyGa1 – yAs quantum well hetero-structures growth by MOVPE system. The main goal is to explore the ability of characterization techniques for multilayer structures like ...
Mirgender Kumar, V.P. Singh
doaj
physica status solidi (b), Volume 263, Issue 4, April 2026.In this study, the structural properties of ion‐implanted GaP:N alloys with different nitrogen contents are analyzed before and after annealing. The results show lattice expansion with increasing N concentration due to implantation‐induced N–P split interstitials, unlike epitaxial GaPN. Annealing reduces distortion, demonstrating ion implantation as an
Md. Mamun‐Or‐Rashid +2 more
wiley +1 more source
In‐Plane Targeted Positioning of Silica‐Coated PbS Quantum Dots Based on Size Differences
Advanced Quantum Technologies, Volume 9, Issue 4, April 2026.We demonstrate size‐selective placement of colloidal quantum dots (CQDs) with silica shells of different thicknesses by using a nanohole Si template. CQDs can act as single photon sources and absorbers. The silica shell thickness can be controlled independently of CQD energy states.
Hiroto Shirozume +3 more
wiley +1 more source
Arsenic Diffusion in MOVPE‐Grown GaAs/Ge Epitaxial Structures
Advanced Electronic MaterialsGermanium is reemerging as a prominent material in the semiconductor field, particularly for electronic applications, photonics, photovoltaics, and thermophotovoltaics.
V. Orejuela +3 more
doaj +1 more source
Basic Concepts and Interfacial Aspects of High-Efficiency III-V Multijunction Solar Cells
CHIMIA, 2007 Among various types of solar cells, MOVPE-grown triple-junction III-V compound semiconductors are today's most efficient photovoltaic devices with conversion efficiencies exceeding 40%.
B. Erol Sağol +4 more
doaj +1 more source
Structural Characterization of Movpe Grown Algan/Gan for Hemt Formation
Reviews on Advanced Materials Science, 2018 Results on structural, compositional, optical and electrical characterization of MOVPE grown AlGaN/GaN heterostructures with focus on understanding how the AlN buffer synthesis affects the top films are reported.
Popok V.N. +6 more
doaj +1 more source
, 1997 基于准热力学平衡模型对以TMGa和NH_3为源的MOVPE生长GaN的过程进行了分析,并在此基础上计算了MOVPE生长GaN的相图。Gan的MOVPE相图由GaN(s)单凝聚相区、GaN(s)+Ga(1)双凝聚相区、表面会形成Ga滴和不会形成Ga滴的两个腐蚀区构成。着重讨论了生长温度、反应室压力、载气组分、NH_3分解率和V ...
陆大成, 段树坤
core
Quantum Emitters in Hexagonal Boron Nitride: Principles, Engineering and Applications
Advanced Functional Materials, Volume 36, Issue 20, 9 March 2026.Quantum emitters in hexagonal boron nitride have emerged as a promising candidate for quantum information science. This review examines the fundamentals of these quantum emitters, including their level structures, defect engineering, and their possible chemical structures.
Thi Ngoc Anh Mai +8 more
wiley +1 more source
Fabrication of Semiconductor Nanowires for Electronic Transport Measurements
CHIMIA, 2006 We report on epitaxial growth of InAs nanowires and the steps necessary to create devices for electrnic transport experiments. Growth conditions were found by the use of metal organic vapor phase epitaxy (MOVPE) resulting in nanowires with ...
Andreas Pfund +6 more
doaj +1 more source