Results 61 to 70 of about 6,729 (212)
Advanced Functional Materials, Volume 36, Issue 21, 12 March 2026.The chemical composition and band alignment are systematically investigated at the TiO2/InP heterointerface. Thin TiO2 films are deposited by ALD on atomically ordered, P‐terminated p‐InP(100). By combining UPS, XPS, and ab initio molecular dynamics, the atomistic structure and electronic alignment are revealed.
Mohammad Amin Zare Pour +11 more
wiley +1 more source
Atmospheric pressure metal-organic vapour phase epitaxy of InP, (GaIn)as, and (GaIn)(AsP) alloys [PDF]
, 1989 An introduction to optical communications and opto-electronic devices is given, which demonstrates the motivation for research into III/V devices, and materials.
Butler, Barry R., Butler, B.R
core
Robust Reaction-Transport Models of Movpe Reactors
, 1997 A simple gas-phase and surface kinetic model describing the Metalorganic Vapor Phase Epitaxy (MOVPE) of GaAs from trimethyl-gallium (TMG) and arsine has been extracted from reported reaction mechanisms through sensitivity analysis. This model was coupled
H. K. Moffat +2 more
core +1 more source
Deterministic hBN Bubbles as a Versatile Platform for Studies on Single‐Photon Emitters
Advanced Functional Materials, Volume 36, Issue 24, 23 March 2026.Single‐photon emitters (SPEs) in hBN are promising for quantum technologies; however, in exfoliated samples their activation is required, limiting reproducibility of previous studies. This work introduces a large‐area MOVPE‐grown hBN platform that hosts SPEs without prior activation.
Piotr Tatarczak +8 more
wiley +1 more source
Arsenic Diffusion in MOVPE‐Grown GaAs/Ge Epitaxial Structures
Advanced Electronic MaterialsGermanium is reemerging as a prominent material in the semiconductor field, particularly for electronic applications, photonics, photovoltaics, and thermophotovoltaics.
V. Orejuela +3 more
doaj +1 more source
Basic Concepts and Interfacial Aspects of High-Efficiency III-V Multijunction Solar Cells
CHIMIA, 2007 Among various types of solar cells, MOVPE-grown triple-junction III-V compound semiconductors are today's most efficient photovoltaic devices with conversion efficiencies exceeding 40%.
B. Erol Sağol +4 more
doaj +1 more source
physica status solidi (b), Volume 263, Issue 3, March 2026.Vacancies in low‐dose ion‐implanted GaN are studied by positron annihilation. Depth profiles of the net donor concentration (ND) are close to those for implanted impurities, but ND is 2–3 times higher than concentrations of implanted ions. The origin of donor‐like defects is expected to be N‐vacancy‐related defects, and Ga‐vacancy‐type defects play a ...
Akira Uedono +6 more
wiley +1 more source
Structural Characterization of Movpe Grown Algan/Gan for Hemt Formation
Reviews on Advanced Materials Science, 2018 Results on structural, compositional, optical and electrical characterization of MOVPE grown AlGaN/GaN heterostructures with focus on understanding how the AlN buffer synthesis affects the top films are reported.
Popok V.N. +6 more
doaj +1 more source
Selective Area Growth InGaAsP by MOVPE
, 2003 The wide stripe (ISjum) selective area growth (SAG) of InGaAsP by low pressure MOVPE is systematically investigated. The characteristics of the growth ratios,thickness enhancement factors .bandgap modulation,and composition modulation vary with the ...
Dong Jie, Qiu Weibin, Zhou Fan, Wang Wei
core
physica status solidi (a), Volume 223, Issue 4, 24 February 2026.We demonstrate thermally reliable all‐MBE InAs/GaAs quantum dot lasers directly grown on V‐grooved Si (001). By preventing V‐groove deformation and eliminating micro‐cracks, the device achieves a maximum pulsed operating temperature of 150°C. This establishes a robust, scalable platform for monolithic Si photonics.
Jun Li +17 more
wiley +1 more source