Results 61 to 70 of about 5,528 (229)
Robust reaction-transport models of MOVPE reactors
, 1998 A simple gas-phase and surface kinetic model describing the Metallorganic Vapor Phase Epitaxy (MOVPE) of GaAs from trimethyl-gallium (TMG) and arsine has been extracted from reported reaction mechanisms through sensitivity analysis.
Theodoropoulos, C.; id_orcid +2 more
core +2 more sources
Spectroscopic Characterization of GaAs and AlxGa1 – xAs / AlyGa1 – yAs Quantum Well Heterostructures [PDF]
Журнал нано- та електронної фізики, 2013 This work presents the results of the characterization of GaAs and AlxGa1 – xAs / AlyGa1 – yAs quantum well hetero-structures growth by MOVPE system. The main goal is to explore the ability of characterization techniques for multilayer structures like ...
Mirgender Kumar, V.P. Singh
doaj
Phonons in Single‐Domain κ‐Ga2O3 Studied by Polarization Angle‐Resolved Raman Scattering
Advanced Electronic Materials, Volume 12, Issue 3, 4 February 2026.Single‐domain κ‐Ga2O3 is systematically studied using advanced Raman spectroscopy, revealing over 100 Raman‐active phonon modes. These modes are compared with theoretical predictions and organized within a newly established nomenclature, offering a robust reference for future research.
Alwin Wüthrich +11 more
wiley +1 more source
Arsenic Diffusion in MOVPE‐Grown GaAs/Ge Epitaxial Structures
Advanced Electronic MaterialsGermanium is reemerging as a prominent material in the semiconductor field, particularly for electronic applications, photonics, photovoltaics, and thermophotovoltaics.
V. Orejuela +3 more
doaj +1 more source
Solar‐Blind Ultraviolet Photodetectors Based on Two‐Dimensional Materials and Their Heterostructures
Advanced Physics Research, Volume 5, Issue 2, February 2026.Solar‐blind ultraviolet photodetectors are crucial for diverse applications. This review comprehensively summarizes recent advances using two‐dimensional materials and their heterostructures, which offer tunable bandgaps, flexibility, and no lattice‐matching constraints.
Yu Lu +7 more
wiley +1 more source
Basic Concepts and Interfacial Aspects of High-Efficiency III-V Multijunction Solar Cells
CHIMIA, 2007 Among various types of solar cells, MOVPE-grown triple-junction III-V compound semiconductors are today's most efficient photovoltaic devices with conversion efficiencies exceeding 40%.
B. Erol Sağol +4 more
doaj +1 more source
Advanced Materials Interfaces, Volume 13, Issue 2, 20 January 2026.An intriguing design concept for the preparation of metastable mesoporous h‐LuFeO3 thin films and powders by soft‐templating is presented. The hexagonal rather than the orthorhombic phase is formed due to the presence of a polymer structure‐directing agent in the synthesis.
Christian Suchomski +6 more
wiley +1 more source
Revealing polytypism in 2D boron nitride with UV photoluminescence
npj 2D Materials and ApplicationsBoron nitride exhibits various crystal structures. The subgroup of layered boron nitrides includes several polytypes such as hexagonal (hBN), Bernal (bBN), and rhombohedral (rBN) BN.
Jakub Iwański +16 more
doaj +1 more source
Advanced Energy and Sustainability Research, Volume 7, Issue 1, January 2026.III‐V nanowires have shown great potential for use as electrodes in photoelectrochemical water splitting. It has been demonstrated that their durability and efficiency depend on their geometry and composition. All of those tested sustained H2 production for 2 h.
Juliane Koch +5 more
wiley +1 more source
Selective Area Growth InGaAsP by MOVPE
, 2003 The wide stripe (ISjum) selective area growth (SAG) of InGaAsP by low pressure MOVPE is systematically investigated. The characteristics of the growth ratios,thickness enhancement factors .bandgap modulation,and composition modulation vary with the ...
Dong Jie, Qiu Weibin, Zhou Fan, Wang Wei
core