Results 11 to 20 of about 3,102 (186)
Growth Temperature Dependency of High Al Content AlGaN Epilayers on AlN/Al2O3 Templates
Cumhuriyet Science Journal, 2018 In this work, MOVPE (Metalorganic Vapor PhaseEpitaxy) growth and characterization studies of high Al content AlGaN epilayersare reported. We utilize high resolutionX-ray diffraction (HRXRD) and atomic force microscope (AFM) techniques toanalyze the ...
İlkay Demir
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Two-Step GaN Layer Growth for High-Voltage Lateral AlGaN/GaN HEMT
Crystals, 2023 This paper presents reduced dislocation of the AlGaN/GaN heterostructure for high-voltage lateral high-electron-mobility transistor (HEMT) devices. AlGaN/GaN heterostructure was grown on sapphire substrate. Prior to the growth of the AlGaN layer, the GaN
Yusnizam Yusuf +8 more
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Polariton lasing in AlGaN microring with GaN/AlGaN quantum wells
APL Photonics, 2023 Microcavity polaritons are strongly interacting hybrid light–matter quasiparticles, which are promising for the development of novel light sources and active photonic devices. Here, we report polariton lasing in the UV spectral range in microring resonators based on GaN/AlGaN slab waveguides, with experiments carried out from 4 K up to room temperature.
Delphan, A. +9 more
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Deep Ultraviolet AlGaN-Based Light-Emitting Diodes with p-AlGaN/AlGaN Superlattice Hole Injection Structures [PDF]
Processes, 2021 The p-AlGaN/AlGaN superlattice (SL) hole injection structure was introduced into deep ultraviolet (DUV) light-emitting diodes (LEDs) to enhance their performances. The period thicknesses of the p-Al0.8Ga0.2N/Al0.48Ga0.52N SLs affected the performances of the DUV LEDs.
Tien-Yu Wang +5 more
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Application of Cl2/BCl3/Ar Plasma Treatment in the Improvement of Ti/Al/Mo/Au Ohmic Contacts
Advances in Electrical and Electronic Engineering, 2016 Significant improvement of Ti/Al/Mo/Au ohmic contacts deposited on previously Cl2/BCl3/Ar plasma treated surface was observed. The standard deviation of contact resistance was crucially reduced due to the incorporation of Cl2/BCl3/Ar plasma treatment ...
Jacek Gryglewicz +4 more
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IEEE Journal of Quantum Electronics, 2022 AlGaN-based UV LEDs have proven to have broad applications in many fields including sterilization, disinfection, purification, and phototherapy, but the performance still needs to be further improved. Benefiting from advantages such as better current spreading, lower self-heating effect and higher light extraction efficiency achieved by the reduced LED
Pengfei Tian +6 more
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Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays
Light: Science & Applications, 2021 Solar-blind ultraviolet (UV) photodetectors (PDs) have attracted tremendous attention in the environmental, industrial, military, and biological fields. As a representative III-nitride material, AlGaN alloys have broad development prospects in the field ...
Qing Cai +9 more
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Semiconductor Physics, Quantum Electronics & Optoelectronics, 2019 We have presented the results of terahertz time-domain spectroscopy measurements and a rigorous electrodynamic modeling of the optical characteristics of grating-based AlGaN/GaN plasmonic structures with low-doped two-dimensional electron gas in the ...
V.V. Korotyeyev
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Comparative Modelling and Thermal Analysis of AlGaN/GaN Power Devices
Journal of Low Power Electronics and Applications, 2021 The use of Aluminum Gallium Nitride (AlGaN) as a power switching device material has been a promising topic of research in recent years. Along with Silicon Carbide (SiC) and Gallium Nitride (GaN), AlGaN is categorized as a Wideband Gap (WBG) material ...
Mahesh B. Manandhar, Mohammad A. Matin
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Role of inserting an InGaN strain release interlayer in AlGaN growth
Results in Physics, 2023 AlGaN grown on a GaN template usually suffers tensile stress, and the accumulated tensile stress may cause formation of cracks. In this paper, a method to reduce the tensile stress during AlGaN growth by inserting an InGaN interlayer is proposed ...
Zhenzhuo Zhang +5 more
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