Results 11 to 20 of about 39,461 (213)
On the p-AlGaN/n-AlGaN/p-AlGaN Current Spreading Layer for AlGaN-based Deep Ultraviolet Light-Emitting Diodes [PDF]
Nanoscale Research Letters, 2018 In this report, AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) with different p-AlGaN/n-AlGaN/p-AlGaN (PNP-AlGaN) structured current spreading layers have been described and investigated.
Jiamang Che +7 more
doaj +3 more sources
Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays
Light: Science and Applications, 2021 Solar-blind ultraviolet (UV) photodetectors (PDs) have attracted tremendous attention in the environmental, industrial, military, and biological fields. As a representative III-nitride material, AlGaN alloys have broad development prospects in the field ...
Qing Cai, Haifan You, Hui Guo
exaly +2 more sources
Review on the Progress of AlGaN-based Ultraviolet Light-Emitting Diodes
Fundamental Research, 2021 AlGaN-based materials have exhibited considerable potential for fabricating ultraviolet (UV) light-emitting diodes (LEDs) owing to their direct, wide, and adjustable energy bandgap.
Fujun Xu, Xiaojuan Sun, Da-Bing Li
exaly +3 more sources
Enhancement of Electro-Optical Characteristics in GaN-Based Ultraviolet Laser Diodes Through Upper Optical Confinement Structure Design [PDF]
NanomaterialsTwo series of laser diodes with different AlGaN cladding layers were investigated, and it was found that the internal absorption loss was reduced by using a u-AlGaN and p-AlGaN composite upper cladding layer, and the performance of LD was improved.
Zhiwei Li +5 more
doaj +2 more sources
Deep Ultraviolet AlGaN-Based Light-Emitting Diodes with p-AlGaN/AlGaN Superlattice Hole Injection Structures [PDF]
Processes, 2021 The p-AlGaN/AlGaN superlattice (SL) hole injection structure was introduced into deep ultraviolet (DUV) light-emitting diodes (LEDs) to enhance their performances. The period thicknesses of the p-Al0.8Ga0.2N/Al0.48Ga0.52N SLs affected the performances of the DUV LEDs.
Tien-Yu Wang +5 more
openaire +1 more source
Opto-Electronic Advances, 2023 Efficient and eco-friendly disinfection of air-borne human respiratory RNA viruses is pursued in both public environment and portable usage. The AlGaN-based deep ultraviolet (DUV) light-emission diode (LED) has high practical potentials because of its ...
Ke Jiang +10 more
doaj +1 more source
Strain Balanced AlGaN/GaN/AlGaN nanomembrane HEMTs [PDF]
Scientific Reports, 2017 AbstractSingle crystal semiconductor nanomembranes (NM) are important in various applications such as heterogeneous integration and flexible devices. This paper reports the fabrication of AlGaN/GaN NMs and NM high electron mobility transistors (HEMT).
Tzu-Hsuan Chang +5 more
openaire +3 more sources
Bezmiâlem Science, 2022 Objective:The aim of this study is to evaluate the efficacy of the Algan Hemostatic Agent (AHA) available in three different physical form (liquid, powder and sponge absorbed) in the femoral artery incision model in rats.Methods:A total of sixty-four 5-7
Hüsamettin EKİCİ +6 more
doaj +1 more source
Gate-controlled amplifiable ultraviolet AlGaN/GaN high-electron-mobility phototransistor
Scientific Reports, 2021 Gate-controlled amplifiable ultraviolet phototransistors have been demonstrated using AlGaN/GaN high-electron-mobility transistors (HEMTs) with very thin AlGaN barriers. In the AlGaN/GaN HEMTs, the dark current between the source and drain increases with
Seung-Hye Baek +3 more
doaj +1 more source
Optically pumped room temperature low threshold deep UV lasers grown on native AlN substrates
Opto-Electronic Advances, 2020 We report here an optically pumped deep UV edge emitting laser with AlGaN multiple quantum wells (MQWs) active region grown on AlN substrate by low pressure organometallic vapor phase epitaxy (LP-OMVPE) in a high-temperature reactor.
Kumar Kalapala Akhil Raj +8 more
doaj +1 more source