Results 11 to 20 of about 24,368 (233)
On the p-AlGaN/n-AlGaN/p-AlGaN Current Spreading Layer for AlGaN-based Deep Ultraviolet Light-Emitting Diodes [PDF]
In this report, AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) with different p-AlGaN/n-AlGaN/p-AlGaN (PNP-AlGaN) structured current spreading layers have been described and investigated.
Jiamang Che +7 more
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Phonon Modes in AlGaN Alloy with AlGaN/GaN MQW Interlayer
500nm AlGaN thick layer with AlGaN/GaN MQW interlayer was grown on sapphire substrate for UV detector and resonant tunneling diodes by MOCVD equipment. We were strongly interesting in the stress information of QW. There are a big mismatch of lattice between AlN and GaN.The growth of thick and high quality AlGaN is difficult task.
Jin Zhou +4 more
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Strain Balanced AlGaN/GaN/AlGaN nanomembrane HEMTs [PDF]
AbstractSingle crystal semiconductor nanomembranes (NM) are important in various applications such as heterogeneous integration and flexible devices. This paper reports the fabrication of AlGaN/GaN NMs and NM high electron mobility transistors (HEMT).
Tzu-Hsuan Chang +5 more
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Dynamic Transconductance Dispersion Characterization of Channel Hot-Carrier Stressed 0.25μm AlGaN/GaN HEMTs [PDF]
Using the dynamic transconductance frequency dispersion technique, we characterize unstressed and hot-electron stressed short-channel AlGaN/GaN high-electron-mobility transistors.
Kuball, M., Silvestri, M., Uren, M. J.
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Intentionally Carbon-Doped AlGaN/GaN HEMTs:Necessity for Vertical Leakage Paths [PDF]
Dynamic ON-resistance (RON) in heavily carbon doped AlGaN/GaN high electron mobility transistors is shown to be associated with the semi-insulating carbon-doped buffer region.
Šonský, Jan +6 more
core +1 more source
Polariton lasing in AlGaN microring with GaN/AlGaN quantum wells
Microcavity polaritons are strongly interacting hybrid light–matter quasiparticles, which are promising for the development of novel light sources and active photonic devices. Here, we report polariton lasing in the UV spectral range in microring resonators based on GaN/AlGaN slab waveguides, with experiments carried out from 4 K up to room temperature.
Delphan, A. +9 more
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Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays
Solar-blind ultraviolet (UV) photodetectors (PDs) have attracted tremendous attention in the environmental, industrial, military, and biological fields. As a representative III-nitride material, AlGaN alloys have broad development prospects in the field ...
Qing Cai +9 more
doaj +1 more source
Comparative Modelling and Thermal Analysis of AlGaN/GaN Power Devices
The use of Aluminum Gallium Nitride (AlGaN) as a power switching device material has been a promising topic of research in recent years. Along with Silicon Carbide (SiC) and Gallium Nitride (GaN), AlGaN is categorized as a Wideband Gap (WBG) material ...
Mahesh B. Manandhar, Mohammad A. Matin
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AlGaN-based UV LEDs have proven to have broad applications in many fields including sterilization, disinfection, purification, and phototherapy, but the performance still needs to be further improved. Benefiting from advantages such as better current spreading, lower self-heating effect and higher light extraction efficiency achieved by the reduced LED
Pengfei Tian +6 more
openaire +3 more sources
Segmentación y posicionamiento en las estrategias de producción integral de artes escénicas
El capítulo aborda la segmentación y el posicionamiento como formar particulares de la producción integral de artes escénicas. Para eso se apoya en una encuesta realizada a productores profesionales socios y socias de la Asociacion Profesional de ...
Algan, Raul Santiago
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