Results 11 to 20 of about 26,376 (228)

On the p-AlGaN/n-AlGaN/p-AlGaN Current Spreading Layer for AlGaN-based Deep Ultraviolet Light-Emitting Diodes [PDF]

Nanoscale Research Letters, 2018
In this report, AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) with different p-AlGaN/n-AlGaN/p-AlGaN (PNP-AlGaN) structured current spreading layers have been described and investigated.
Jiamang Che, Chunshuang Chu, Kangkai Tian, Jianquan Kou, Hua Shao, Yonghui Zhang, Wengang Bi, Zi-Hui Zhang   +7 more
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Fabrication and characterization of N-face AlGaN/GaN/AlGaN HEMTs

63rd Device Research Conference Digest, 2005. DRC '05., 2005
The paper reports on the characteristics of N-face AlGaN/GaN/AlGaN HEMTs. Ohmic contact optmization experiments based on the Ti/Al/Ni/Au metallization scheme commonly used for Ga-face AlGaN/GaN HEMTs were carried out and a low contact resistance of 1.3 Ohm/mm was achieved. The devices were then characterized before and after SiN passivation.
CHINI, Alessandro, Rajan, S., Wong, M., Fu, Y., Speck, J. S., Mishra, U. K.   +5 more
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Comparative Modelling and Thermal Analysis of AlGaN/GaN Power Devices

Journal of Low Power Electronics and Applications, 2021
The use of Aluminum Gallium Nitride (AlGaN) as a power switching device material has been a promising topic of research in recent years. Along with Silicon Carbide (SiC) and Gallium Nitride (GaN), AlGaN is categorized as a Wideband Gap (WBG) material ...
Mahesh B. Manandhar, Mohammad A. Matin
doaj   +2 more sources

Enhanced Performance of N-Polar AlGaN-Based Ultraviolet Light-Emitting Diodes With Lattice- Matched AlInGaN Insertion in n-AlGaN Layer

IEEE Photonics Journal, 2023
AlGaN-based ultraviolet-A light-emitting diodes (UVA LEDs) inevitably suffer from current crowding effects at high injection levels due to their lateral device structure, resulting in non-uniform light emission and device overheating. In N-polar UV LEDs,
Hongchang Tao, Shengrui Xu, Yanrong Cao, Huake Su, Yuan Gao, Yachao Zhang, Jincheng Zhang, Yue Hao   +7 more
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The detrimental effect of AlGaN barrier quality on carrier dynamics in AlGaN/GaN interface [PDF]

Scientific Reports, 2019
AbstractCarrier recombination and scattering at the semiconductor boundaries can substantially limit the device efficiency. However, surface and interface recombination is generally neglected in the nitride-based devices. Here, we study carrier recombination and diffusivity in AlGaN/GaN/sapphire heterointerfaces with AlGaN barriers of different quality.
Podlipskas, Žydrūnas, Jurkevičius, Jonas, Kadys, Arūnas, Miasojedovas, Saulius, Malinauskas, Tadas, Aleksiejūnas, Ramūnas   +5 more
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Phonon Modes in AlGaN Alloy with AlGaN/GaN MQW Interlayer

Advanced Materials Research, 2011
500nm AlGaN thick layer with AlGaN/GaN MQW interlayer was grown on sapphire substrate for UV detector and resonant tunneling diodes by MOCVD equipment. We were strongly interesting in the stress information of QW. There are a big mismatch of lattice between AlN and GaN.The growth of thick and high quality AlGaN is difficult task.
Jin Zhou, Yu Feng Jin, En Guang Dai, Zhi Jian Yang, Bo Shen   +4 more
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Strain Balanced AlGaN/GaN/AlGaN nanomembrane HEMTs [PDF]

Scientific Reports, 2017
AbstractSingle crystal semiconductor nanomembranes (NM) are important in various applications such as heterogeneous integration and flexible devices. This paper reports the fabrication of AlGaN/GaN NMs and NM high electron mobility transistors (HEMT).
Tzu-Hsuan Chang, Kanglin Xiong, Sung Hyun Park, Ge Yuan, Zhenqiang Ma, Jung Han   +5 more
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Dynamic Transconductance Dispersion Characterization of Channel Hot-Carrier Stressed 0.25μm AlGaN/GaN HEMTs [PDF]

, 2012
Using the dynamic transconductance frequency dispersion technique, we characterize unstressed and hot-electron stressed short-channel AlGaN/GaN high-electron-mobility transistors.
Kuball, M., Silvestri, M., Uren, M. J.
core   +1 more source

Intentionally Carbon-Doped AlGaN/GaN HEMTs:Necessity for Vertical Leakage Paths [PDF]

, 2014
Dynamic ON-resistance (RON) in heavily carbon doped AlGaN/GaN high electron mobility transistors is shown to be associated with the semi-insulating carbon-doped buffer region.
Šonský, Jan, Caesar, Markus, Croon, Jeroen, Kuball, Martin, Hurkx, Godefridus, Uren, Michael J, Silvestri, Marco   +6 more
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Application of Cl2/BCl3/Ar Plasma Treatment in the Improvement of Ti/Al/Mo/Au Ohmic Contacts

Advances in Electrical and Electronic Engineering, 2016
Significant improvement of Ti/Al/Mo/Au ohmic contacts deposited on previously Cl2/BCl3/Ar plasma treated surface was observed. The standard deviation of contact resistance was crucially reduced due to the incorporation of Cl2/BCl3/Ar plasma treatment ...
Jacek Gryglewicz, Wojciech Macherzynski, Andrzej Stafiniak, Bogdan Paszkiewicz, Regina Paszkiewicz   +4 more
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