Results 61 to 70 of about 24,368 (233)
In this study, a series of highly permeable CeO2 porous hollow microspheres with multilevel gas channels and tunable pore sizes were first prepared via the hydrothermal method, achieving rapid response and fast recovery to ammonia gas. Fast response and recovery performance is highly significant for real‐time monitoring of NH3 gas due to the toxic and ...
Mengke Li +11 more
wiley +1 more source
A comprehensive investigation of hydrogen grabbing towards the formation of hetero-clusters of AlGaN–H, Si–AlGaN–H, Ge–AlGaN–H, Pd–AlGaN–H, and Pt–AlGaN–H was carried out using DFT computations at the CAM–B3LYP–D3/6-311+G (d,p) level of theory.
Fatemeh Mollaamin, Majid Monajjemi
doaj +1 more source
This review systematically summarizes two‐dimensional layered and nonlayered oxides, focusing on their synthesis, properties, and post‐Moore applications in transistors, gate dielectrics, optoelectronics, and ferroelectric/magnetic devices. It also discusses challenges including scalable growth and interface engineering, along with future industrial ...
Xinjie Hou +5 more
wiley +1 more source
AlGaN-based deep ultraviolet LEDs by plasma assisted molecular beam epitaxy
AlGaN-based deep ultraviolet LEDs by plasma assisted molecular beam ...
A Moldawer (13363653) +6 more
core +1 more source
Ferroelectricity and Ferroionic Dynamics in Two‐Dimensional CuInP2S6
The coupled dynamics of ferroelectric polarization and Cu‐ion migration endow CuInP2S6 with unique ferroionic functionalities. This review connects structure, switching mechanisms, and device applications to provide a unified perspective on two‐dimensional ferroionic materials.
Shangsheng Li +7 more
wiley +1 more source
Advanced process development for contacts to algan/gan high electron mobility transistors (HEMTS) [PDF]
High work function metals--Ni, Pt, Ir, and Au--were comparatively studied as Schottky metallizations to GaN and AlGaN/GaN heterostructures. Ni/Au, Ni/Pt/Au, Ir/Au, Ir/Pt/Au and Pt/Au Schottky diodes were fabricated on GaN and AlGaN/GaN substrates ...
Ofuonye, Benedict Chukwuka
core
Poor light extraction efficiency (LEE) has been one of the major challenges responsible for the low external quantum efficiency of AlGaN-based ultraviolet light emitting Diodes (UV-LEDs).
Chee, Kuan W. A. +17 more
core +1 more source
Two series of laser diodes with different AlGaN cladding layers were investigated, and it was found that the internal absorption loss was reduced by using a u-AlGaN and p-AlGaN composite upper cladding layer, and the performance of LD was improved.
Zhiwei Li +5 more
doaj +1 more source
Scaled ultra-wide bandgap AlGaN polarization-graded FET with ultra-thin buffer layer [PDF]
We report on the design and experimental demonstration of ultra-wide-bandgap AlGaN polarization-graded field-effect transistors (PolFETs) with ultra-thin channels aimed at enabling high current capability, RF performance, and reduced thermal resistance ...
Yinxuan Zhu +14 more
doaj +1 more source
Postoperative Hypocalcemia Following Total Thyroidectomy Versus Completion Thyroidectomy
Completion thyroidectomy performed with at least a three‐month interval demonstrates superior parathyroid preservation compared to primary total thyroidectomy, as evidenced by significantly higher postoperative parathyroid hormone levels (51.90 ± 30.26 pg/mL vs. 30.90 ± 17.10 pg/mL, p = 0.006).
Mehmet Turan Cicek +3 more
wiley +1 more source

