Results 61 to 70 of about 3,102 (186)

Voting Red Again: How Social Capital and Local Change Drove the Trump Swing

Journal of Regional Science, EarlyView.
ABSTRACT Social capital has long been regarded as a bulwark of democratic life. Yet in the United States—as across much of the democratic world—some of the communities with the densest social ties have proved the most receptive to antisystem politics.
Pedro Fierro, Andrés Rodríguez‐Pose, Francisco Rowe, Ellen Johanna Helsper   +3 more
wiley   +1 more source

Responsible Innovation: The Impact of Major Industrial Disasters and Gender in a Global South Context

Journal of Product Innovation Management, EarlyView.
ABSTRACT Responsible innovation (RI) dynamics remain underexplored in Global South contexts, which have a high prevalence of micro‐ and small enterprises and are vulnerable to the devastating effects of industrial disasters. Only a few studies examine RI within such settings, where it is arguably needed most.
Afreen Choudhury, Magda Hassan, Jarrod P. Vassallo, Chinmay Pattnaik   +3 more
wiley   +1 more source

Economic Insecurity, Greenlash and the Demand for Climate Policies in Europe

Kyklos, EarlyView.
ABSTRACT We study how perceived economic insecurity predicts people's support for climate policies across European regions. By developing a new political economy model and using a dataset with 17 European countries, we show that larger perceived economic insecurity is robustly associated with lower support for climate policies involving higher taxes on
Michele Gubello, Claire Keane
wiley   +1 more source

Trust Norms, Distrust, and Worst‐Case Defiance in the COVID‐19 Pandemic

Regulation &Governance, EarlyView.
ABSTRACT When pandemics threaten, governments are expected to protect citizens. Trustworthiness and trust are central to meeting public expectations. Motivational posturing theory differentiates resistant and dismissive defiance during the COVID‐19 pandemic.
Valerie Braithwaite
wiley   +1 more source

Synergistic Pyro‐Phototronics and Structural Anisotropy in CsAg2I3/GaN Heterostructures for High‐Performance Polarization‐Sensitive UV Photodetectors

Advanced Science, Volume 13, Issue 31, 4 June 2026.
The development of polarization‐sensitive ultraviolet photodetectors is limited by poor heterojunction quality and low polarization sensitivity. This study integrates synthesized CsAg2I3 single crystals with intrinsic non‐centrosymmetry into van der Waals heterojunction devices, demonstrating pronounced pyro‐phototronic effect.
Yalin Zhai, Siqi Wang, Peng Guo, Songling Feng, Peng Wan, Jilong Tang, Caixia Kan, Hui Li, Daning Shi, Mingming Jiang   +9 more
wiley   +1 more source

Temperature Dependence of the Energy Band Diagram of AlGaN/GaN Heterostructure

Advances in Condensed Matter Physics, 2018
Temperature dependence of the energy band diagram of AlGaN/GaN heterostructure was investigated by theoretical calculation and experiment. Through solving Schrodinger and Poisson equations self-consistently by using the Silvaco Atlas software, the energy
Yanli Liu, Dunjun Chen, Kexiu Dong, Hai Lu, Rong Zhang, Youdou Zheng, Zhilin Zhu, Guangfen Wei, Zhonghai Lin   +8 more
doaj   +1 more source

The detrimental effect of AlGaN barrier quality on carrier dynamics in AlGaN/GaN interface

Scientific Reports, 2019
AbstractCarrier recombination and scattering at the semiconductor boundaries can substantially limit the device efficiency. However, surface and interface recombination is generally neglected in the nitride-based devices. Here, we study carrier recombination and diffusivity in AlGaN/GaN/sapphire heterointerfaces with AlGaN barriers of different quality.
Podlipskas, Žydrūnas, Jurkevičius, Jonas, Kadys, Arūnas, Miasojedovas, Saulius, Malinauskas, Tadas, Aleksiejūnas, Ramūnas   +5 more
openaire   +2 more sources

Enhancing the Light-Extraction Efficiency of an AlGaN Nanowire Ultraviolet Light-Emitting Diode by Using Nitride/Air Distributed Bragg Reflector Nanogratings

IEEE Photonics Journal, 2017
The performance and efficiency of AlGaN ultraviolet light-emitting diodes have been limited by the extremely low light-extraction efficiency (LEE) due to the intrinsic material properties of AlGaN.
Mohd Sharizal Alias, Bilal Janjua, Chao Zhao, Davide Priante, Abdullah A. Alhamoud, Malleswararao Tangi, Lafi M. Alanazi, Abdullah A. Alatawi, Abdulrahman M. Albadri, Ahmed Y. Alyamani, Tien Khee Ng, Boon S. Ooi   +11 more
doaj   +1 more source

Trap behaviours characterization of AlGaN/GaN high electron mobility transistors by room-temperature transient capacitance measurement

AIP Advances, 2016
In this paper, the trap behaviours in AlGaN/GaN high electron mobility transistors (HEMTs) are investigated using transient capacitance measurement. By measuring the transient gate capacitance variance (ΔC) with different pulse height, the gate pulse ...
Bin Dong, Jie Lin, Ning Wang, Ling-li Jiang, Zong-dai Liu, Xiaoyan Hu, Kai Cheng, Hong-yu Yu   +7 more
doaj   +1 more source

Spectroscopic Ellipsometry and Correlated Studies of AlGaN-GaN HEMTs Prepared by MOCVD

Nanomaterials
A series of AlGaN/GaN high-electron-mobility transistor (HEMT) structures, with an AlN thin buffer, GaN thick layer and Al0.25Ga0.75N layer (13–104 nm thick), is prepared by metal–organic chemical vapor deposition and investigated via multiple techniques.
Yanlian Yang, Yao Liu, Yaoze Li, Manika Tun Nafisa, Zhe Chuan Feng, Lianshan Wang, Jeffrey Yiin, Lingyu Wan, Benjamin Klein, Ian Ferguson, Wenhong Sun   +10 more
doaj   +1 more source