Results 61 to 70 of about 39,461 (213)
Materials Research Express, 2021 The non-polar a -AlGaN epitaxial film was successfully grown on the semi-polar r- sapphire substrate by metal-organic chemical vapor deposition technique.
Abbas Nasir +5 more
doaj +1 more source
Journal of the Royal Anthropological Institute, EarlyView.Economic anthropologists now carry out fieldwork in settings for which the ethnographic method was never designed, amongst powerful financial actors who are notoriously difficult to access, and in contexts which transcend geographical boundaries. This has engendered a re‐orientation of anthropology, to consider not only the economic lives of people but
Kimberly Chong
wiley +1 more source
Advances in Condensed Matter Physics, 2015 The temperature-dependent stress state in the AlGaN barrier layer of AlGaN/GaN heterostructure grown on sapphire substrate was investigated by ultraviolet (UV) near-resonant Raman scattering.
Yanli Liu +5 more
doaj +1 more source
Electoral responses to economic crises
American Journal of Political Science, EarlyView.Abstract How do voters respond to economic crises: Do they turn against the incumbent, reward a certain political camp, polarize to the extremes, or perhaps continue to vote much like before? Analyzing extensive data on electorates, parties, and individuals in 24 countries for over half a century, we document a systematic pattern whereby economic ...
Yotam Margalit, Omer Solodoch
wiley +1 more source
Imaging Capability of PHEMT, GaN/AlGaN and Si Micro Hall Probes for Scanning Hall Probe Microscopy between 25°C-125°C [PDF]
, 2008 R. Akram, M.
Oral, Ahmet
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Polarization effects in AlGaN/GaN and GaN/AlGaN/GaN heterostructures [PDF]
Journal of Applied Physics, 2003 The influence of AlGaN and GaN cap layer thickness on Hall sheet carrier density and mobility was investigated for Al0.32Ga0.68N/GaN and GaN/Al0.32Ga0.68N/GaN heterostructures deposited on sapphire substrates. The sheet carrier density was found to increase and saturate with the AlGaN layer thickness, while for the GaN-capped structures it decreased ...
Heikman, S +5 more
openaire +2 more sources
Household portfolio allocation and stock market beliefs: Evidence from Japanese households
Journal of Financial Research, EarlyView.Abstract We analyze data from the Keio Household Panel Survey (KHPS) to investigate how individuals' beliefs about financial markets influence current and planned asset holdings. Our results reveal statistically and economically significant relations between specific beliefs and both present asset allocations and accumulation.
Raslan Alzuabi, Daniel Gray
wiley +1 more source
Journal of Product Innovation Management, EarlyView.ABSTRACT Responsible innovation (RI) dynamics remain underexplored in Global South contexts, which have a high prevalence of micro‐ and small enterprises and are vulnerable to the devastating effects of industrial disasters. Only a few studies examine RI within such settings, where it is arguably needed most.
Afreen Choudhury +3 more
wiley +1 more source
ComputationA comprehensive investigation of hydrogen grabbing towards the formation of hetero-clusters of AlGaN–H, Si–AlGaN–H, Ge–AlGaN–H, Pd–AlGaN–H, and Pt–AlGaN–H was carried out using DFT computations at the CAM–B3LYP–D3/6-311+G (d,p) level of theory.
Fatemeh Mollaamin, Majid Monajjemi
doaj +1 more source
GaN-based HEMTs on Low Resistivity Silicon Technology for Microwave Applications [PDF]
, 2016 This paper investigates the effect of insertion AlN spacer between the GaN channel and buffer in a sub-micron gate (0.3 μm) AlGaN/GaN HEMTs on a low-resistivity (LR) (σ < 10 Ω.cm) silicon substrates on RF performance.
Eblabla, Abdalla +4 more
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