Results 81 to 90 of about 39,461 (213)

Field‐Effect Transistors from Artificial Charged Domain Walls in Stacked Van der Waals Ferroelectric α‐In2Se3

Advanced Materials, Volume 38, Issue 20, 7 April 2026.
This study utilizes the van der Waals stacking of ferroelectric α$\alpha$‐In2Se3 to fabricate in‐plane artificial charged domain walls. These charged domain walls are electrically accessible, gate‐tunable, and show 2–9 orders of magnitude higher conductance than charged domain walls from thin film ferroelectrics, allowing their integration in field ...
Shahriar Muhammad Nahid, Haiyue Dong, Gillian M. Nolan, SungWoo Nam, Nadya Mason, Pinshane Y. Huang, Arend M. van der Zande   +6 more
wiley   +1 more source

GaN Mid‐IR Plasmonics: Low‐Loss Epsilon‐Near‐Zero Modes

Advanced Optical Materials, Volume 14, Issue 16, 24 April 2026.
This work reports the first comprehensive experimental study of heavily doped GaN as an epsilon‐near‐zero (ENZ) material, including the demonstration of a plasmonic ENZ mode in GaN thin films on Si, and establishes GaN as a viable platform for mid‐IR ENZ‐based plasmonics. ATR measurements and TMM modelling enable detailed analysis of the hybrid surface
Julia Inglés‐Cerrillo, Maria Villanueva‐Blanco, Benjamin Damilano, Stéphane Vézian, Miguel Montes Bajo, Adrian Hierro   +5 more
wiley   +1 more source

Intersubband transitions in nonpolar GaN/Al(Ga)N heterostructures in the short and mid-wavelength infrared regions

, 2015
This paper assesses nonpolar m- and a-plane GaN/Al(Ga)N multi-quantum-wells grown on bulk GaN for intersubband optoelectronics in the short- and mid-wavelength infrared ranges.
Ajay, A., Beeler, M., Bellet-Amalric, E., Bougerol, C., Lim, C. B., Lähnemann, J., Monroy, E.   +6 more
core   +3 more sources

Demonstration of 2.71% External Quantum Efficiency at 630 nm in Singular 2 μm Red InGaN Micro‐LEDs on Porous GaN for AR/VR Applications

Advanced Photonics Research, Volume 7, Issue 4, April 2026.
A peak external quantum efficiency (EQE) of 2.71% at 630 nm at 2.5 A/cm2 for 2 μm InGaN‐based red micro‐light‐emitting diodes deposited on a topology‐free porous template. This is the highest reported EQE for singular (nonarrayed) devices with a size < 5 μm and emitting at greater than 620 nm and shows great promise in application to AR/VR devices ...
Surjava Sanyal, Guangying Wang, Qinchen Lin, Timothy Shih, Akhilesh Ghate, Swarnav Mukhopadhyay, Khush Gohel, Darryl Shima, Ganesh Balakrishnan, Chirag Gupta, Shubhra S. Pasayat   +10 more
wiley   +1 more source

Electric Current and Noise in Long GaN Nanowires in the Space-Charge Limited Transport Regime

, 2017
We studied electric current and noise in planar GaN nanowires (NWs). The results obtained at low voltages provide us with estimates of the depletion effects in the NWs. For larger voltages, we observed the space-charge limited current (SCLC) effect.
Belyaev, A. E., Hardtdegen, H., Kochelap, V. A., Korotyeyev, V. V., Naumov, A. V., Petrychuk, M. V., Sydoruk, V. A., Vitusevich, S. A.   +7 more
core   +1 more source

First‐Principles Study of Structural, Elastic, and Piezoelectric Properties of Wurtzite Superlattice ScxAl1−xN, ScxGa1−xN, and ScxIn1−xN Alloys

physica status solidi (b), Volume 263, Issue 4, April 2026.
This study investigates the structural, elastic, and piezoelectric properties of Sc‐doped wurtzite nitrides using first‐principles calculations. A strong compositional dependence of elastic and piezoelectric coefficients is observed, with significant nonlinearities providing insights into the tunability of these materials for piezoelectric applications.
Hang Cui, William Alan Doolittle, Lukas Graber, Paul Douglas Yoder   +3 more
wiley   +1 more source

Temperature Dependence of the Energy Band Diagram of AlGaN/GaN Heterostructure

Advances in Condensed Matter Physics, 2018
Temperature dependence of the energy band diagram of AlGaN/GaN heterostructure was investigated by theoretical calculation and experiment. Through solving Schrodinger and Poisson equations self-consistently by using the Silvaco Atlas software, the energy
Yanli Liu, Dunjun Chen, Kexiu Dong, Hai Lu, Rong Zhang, Youdou Zheng, Zhilin Zhu, Guangfen Wei, Zhonghai Lin   +8 more
doaj   +1 more source

A Temperature Analysis of High-power AlGaN/GaN HEMTs [PDF]

, 2006
Galliumnitride has become a strategic superior material for space, defense and civil applications, primarily for power amplification at RF and mm-wave frequencies.
Borghs, G., Das, J., Derluyn, J., Germain, M., Ji, H., Kuball, M., Oprins, H., Ruythooren, W., Sarua, A.   +8 more
core   +2 more sources

Dislocation scattering in a two-dimensional electron gas

, 2000
A theory of scattering by charged dislocation lines in a two-dimensional electron gas (2DEG) is developed. The theory is directed towards understanding transport in AlGaN/GaN high-electron-mobility transistors (HEMT), which have a large number of line ...
Gossard, Arthur. C., Jena, Debdeep, Mishra, Umesh K.   +2 more
core   +1 more source

Ga2O3/(Al)GaN Heterostructures for Next Generation Power Electronics

physica status solidi (b), Volume 263, Issue 4, April 2026.
The study reveals how polarization‐engineered III‐nitride/Ga2O3 heterostructures overcome the thermal and mobility limitations of Ga2O3. N‐polar AlN and AlGaN interfaces generate strong positive polarization fields that enable high‐density two‐dimensional electron gas formation and enhanced electron mobility, while κ‐Ga2O3 integration further boosts ...
Manijeh Razeghi, N. Shrestha, V. E. Sandana, D. J. Rogers, F. H. Teherani   +4 more
wiley   +1 more source