Results 81 to 90 of about 3,102 (186)

Advanced physical modeling approaches for high-precision TCAD simulation of GaN HEMT power devices: a review. [PDF]

Discov Nano
Zhao H, Firdaus A, Farizuan M, Tan WH, Kawarada H, Falina S, Syamsul M.   +6 more
europepmc   +1 more source

Suppression of Interface Traps and Improved Breakdown in Recessed-Gate AlGaN/GaN MISHEMTs Using Low-Temperature Nitrogen Passivation. [PDF]

ACS Omega
Chen HC, Liu AC, Lin CH, Chou SY, Chang TC, Kao TS, Kuo HC.   +6 more
europepmc   +1 more source

Pixel level anomaly detection in second harmonic generation microscopy for non destructive defect inspection of AlGaN/GaN heterostructures. [PDF]

Discov Nano
Kang CF, Hung CC, Huang CH, Li TC, Uen WY, Chiu CH.   +5 more
europepmc   +1 more source

Size-Dependent Emission Enhancement in Deep-Ultraviolet AlGaN Microrods. [PDF]

Nanomaterials (Basel)
Sun X, Yan Z, Xu T, Zhu J, Xie Z, Xiu X, Chen D, Liu B, Shi Y, Zhang R, Zheng Y, Chen P.   +11 more
europepmc   +1 more source

Electrical Properties and Performance Enhancement of AlGaN/GaN/Si HEMTs. [PDF]

Micromachines (Basel)
Mosbahi H, Ali MKM, Gassoumi M.
europepmc   +1 more source

Terahertz Antenna-Coupled Wire-Channel Field-Effect Transistors Based on AlGaN/GaN Heterostructures. [PDF]

Sensors (Basel)
Moscotin M, Jorudas J, Prystawko P, Saniuk M, Kovalevskij V, Kašalynas I.   +5 more
europepmc   +1 more source

Optimization of enhancement-mode MIS-GaN HEMT with dual channel for simple process using TCAD simulation. [PDF]

Sci Rep
Lee KH, Yang Y, Heo J, Kim JH.
europepmc   +1 more source

Gate-Localized Fluorination Enables Enhancement-Mode AlGaN/GaN High-Electron Mobility Transistors. [PDF]

ACS Appl Electron Mater
Kim DW, Kim B, Cho Y, Kim S, Gong Y, Baek Y, Bae B, Noh YK, Bae S, Park DH, Lee K.   +10 more
europepmc   +1 more source

Impact of Carbon Diffusion Induced Stress on the Properties of Diamond/GaN Heterojunctions. [PDF]

Nanomaterials (Basel)
Sun H, Wu M, Xu P, Yuan C, Yang L, Lu H, Hou B, Zhang M, Ma X, Hao Y.   +9 more
europepmc   +1 more source

Highly Sensitive Room-Temperature Graphene-Modulated AlGaN/GaN HEMT THz Detector Architecture. [PDF]

Sensors (Basel)
Sengupta R, Sarusi G.
europepmc   +1 more source