Results 81 to 90 of about 26,376 (228)

Enhancing the Light-Extraction Efficiency of an AlGaN Nanowire Ultraviolet Light-Emitting Diode by Using Nitride/Air Distributed Bragg Reflector Nanogratings

IEEE Photonics Journal, 2017
The performance and efficiency of AlGaN ultraviolet light-emitting diodes have been limited by the extremely low light-extraction efficiency (LEE) due to the intrinsic material properties of AlGaN.
Mohd Sharizal Alias, Bilal Janjua, Chao Zhao, Davide Priante, Abdullah A. Alhamoud, Malleswararao Tangi, Lafi M. Alanazi, Abdullah A. Alatawi, Abdulrahman M. Albadri, Ahmed Y. Alyamani, Tien Khee Ng, Boon S. Ooi   +11 more
doaj   +1 more source

Associations Between Imaging‐Detected Pulp Calcification and Systemic Diseases: A Systematic Review, Thematic Analysis, and Meta‐Analysis

International Endodontic Journal, Volume 59, Issue 11, Page 2283-2302, November 2026.
ABSTRACT Background Pulp calcification (PC) is a common imaging finding traditionally attributed to local factors or ageing. However, increasing evidence suggests that it may be associated with broader systemic biological disturbances. Clarifying this association may help determine whether dental pulp findings contribute to the interpretation of ...
José Evando da Silva‐Filho, Paula Maria da Costa Torres, Eduardo Diogo Gurgel‐Filho   +2 more
wiley   +1 more source

Effect of AlGaN Barrier Thickness on the Noise of AlGaN/GaN High Electron Mobility Transistors

, 2011
An analytical- numerical model for the drain source and gate source currents of AlGaN/GaN based HEMTs has been developed that is capable to predict accurately the effects of AlGaN barrier thickness on the cut off frequency and noise in different ...
Rajab Yahyazadeh, Zahra Hashempour
core   +1 more source

Economic Insecurity, Greenlash and the Demand for Climate Policies in Europe

Kyklos, Volume 79, Issue 4, Page 1010-1027, November 2026.
ABSTRACT We study how perceived economic insecurity predicts people's support for climate policies across European regions. By developing a new political economy model and using a dataset with 17 European countries, we show that larger perceived economic insecurity is robustly associated with lower support for climate policies involving higher taxes on
Michele Gubello, Claire Keane
wiley   +1 more source

Accumulation Hole Layer in p-GaN/AlGaN Heterostructures [PDF]

, 2000
We present the results on piezoelectric and pyroelectricdoping in AlGaN-on-GaN and GaN-on-AlGaN heterostructures and demonstrate p-GaN/AlGaN structures with accumulation hole layer. Our results indicate that polarization charge can induce up to 5×1013 cm−
Yang, J. W., Gaska, R., Simin, Grigory, Bykhovski, A. D., Khan, M. A., Shur, M. S.   +5 more
core   +1 more source

Spectroscopic Ellipsometry and Correlated Studies of AlGaN-GaN HEMTs Prepared by MOCVD

Nanomaterials
A series of AlGaN/GaN high-electron-mobility transistor (HEMT) structures, with an AlN thin buffer, GaN thick layer and Al0.25Ga0.75N layer (13–104 nm thick), is prepared by metal–organic chemical vapor deposition and investigated via multiple techniques.
Yanlian Yang, Yao Liu, Yaoze Li, Manika Tun Nafisa, Zhe Chuan Feng, Lianshan Wang, Jeffrey Yiin, Lingyu Wan, Benjamin Klein, Ian Ferguson, Wenhong Sun   +10 more
doaj   +1 more source

AlGaN layers grown on AlGaN buffer layer and GaN buffer layer using strain-relief interlayers - art. no. 68410S

, 2008
We investigated AlGaN layers grown by metalorganic chemical vapor deposition (MOCVD) on high temperature (HT-)GaN and AlGaN buffer layers. On GaN buffer layer, there are a lot of surface cracking because of tensile strain in subsequent AlGaN epilayers ...
Yan, JC, Ma, P, Wang, JX, Liu, Z, Liu, NX, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China., Li, JM, Liu, NX   +6 more
core  

Novel 2D/3D Heterojunction for UV Light‐Emitting Diodes Using Hexagonal Boron Nitride as Hole Injection Layer

Advanced Photonics Research
The AlGaN materials system has been extensively studied in order to improve the efficiency of UV‐B and UV‐C light‐emitting diodes (LEDs). While progress has been made, significant challenges remain at shorter wavelengths.
Andre Perepeliuc, Rajat Gujrati, Phuong Vuong, Vishnu Ottapilakkal, Thi May Tran, Mohamed Bouras, Ali Kassem, Ashutosh Srivastava, Tarik Moudakir, Gilles Patriarche, Paul Voss, Suresh Sundaram, Jean Paul Salvestrini, Abdallah Ougazzaden   +13 more
doaj   +1 more source

Trap behaviours characterization of AlGaN/GaN high electron mobility transistors by room-temperature transient capacitance measurement

AIP Advances, 2016
In this paper, the trap behaviours in AlGaN/GaN high electron mobility transistors (HEMTs) are investigated using transient capacitance measurement. By measuring the transient gate capacitance variance (ΔC) with different pulse height, the gate pulse ...
Bin Dong, Jie Lin, Ning Wang, Ling-li Jiang, Zong-dai Liu, Xiaoyan Hu, Kai Cheng, Hong-yu Yu   +7 more
doaj   +1 more source

Influence of annealed ohmic contact metals on electron mobility of strained AlGaN/GaN heterostructures

, 2009
The influence of annealed ohmic contact metals on the electron mobility of a two dimensional electron gas (2DEG) is investigated on ungated AlGaN/GaN heterostructures and AlGaN/GaN heterostructure field effect transistors (AlGaN/GaN HFETs).
Zhang Yu, Li Huijun, Corrigan T D, Zhao Jianzhi, Lin Zhaojun, Wang Zhangguo   +5 more
core