Results 101 to 110 of about 26,376 (228)

ZnO/AlGaN Ultraviolet Light Emitting Diodes

open access: yes, 2005
We report on the optical and electrical properties of n-ZnO/p/-AlGaN heterojunctions. Ga doped n-type ZnO layers were grown using chemical vapor deposition on Mg doped p-type AlGaN epitaxial layers. AlGaN epitaxial layers with 12 at.% Al were grown on 6H-
B. M. Ataev   +15 more
core   +1 more source

Modulation magnesium-doping in AlGaN/GaN superlattices

open access: yes, 2000
Low resistivity of p-type Mg-doped AlGaN/GaN superlattices (SLs) is demonstrated. The resistivity of the SLs is less than 0.6 Omega .cm. and the measured hole concentration is higher than 1x10(18)cm(-3). The resistivity of SLs is much lower, and the hole
Liu XL   +4 more
core  

Understanding the trap-induced frequency dispersion in the C–V curve of AlGaN/GaN hetero-structure

open access: yes
This article investigates the trapping mechanism in AlGaN/GaN heterostructure. For our study, the traps within the AlGaN layer are introduced at the interface and near the interface of AlGaN/GaN, in the SILVACO TCAD tool.
Joshi, Vikas   +4 more
core   +1 more source

Al‐Rich AlGaN Channel High Electron Mobility Transistors on Silicon: A Relevant Approach for High Temperature Stability of Electron Mobility

open access: yesAdvanced Electronic Materials
Ultrawide bandgap (UWBG) semiconductors offer new possibilities to develop power electronics. High voltage operation for the off‐state as well as high temperature stability of the devices in on‐state are required.
Julien Bassaler   +13 more
doaj   +1 more source

Current transport mechanism in graphene/AlGaN/GaN heterostructures with various Al mole fractions

open access: yesAIP Advances, 2016
The current transport mechanism of graphene formed on AlxGa1−xN/GaN heterostructures with various Al mole fractions (x = 0.15, 0.20, 0.30, and 0.40) is investigated. The current–voltage measurement from graphene to AlGaN/GaN shows an excellent rectifying
Bhishma Pandit   +3 more
doaj   +1 more source

Simulation of polarization effects in AlGaN/GaN heterojunction

open access: yes, 2004
A method for introducing polarization effects in the simulation of GaN-based heterojunction devices is proposed. A delta doping layer is inserted at the interface of heterojunction and the ionized donors or acceptors act as polarization induced fixed ...
Li, N, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. 电子邮箱地址: lina@red.semi.ac.cn   +3 more
core  

Measurement of electrostatic fields in Ge-doped AlGaN structures by off-axis electron holography [PDF]

open access: yesBIO Web of Conferences
Palais Alexis   +3 more
doaj   +1 more source

Electroreflectance spectra of AlGaN/AlN/GaN heterostructure

open access: yes, 2008
Electroreflectance spectra of AlGaN/AlN/GaN heterostructures were measured at various biased voltages (Vdc). Strengths of the internal electric field in AlGaN (FAlGaN) were evaluated from periods of Franz-Keldysh oscillations (FKOs), which were observed ...
Wang, Sheng-Chih
core  

Women’s Rights and Gender Equality in Turkey| The Politicization of Rape as a Consequence of Western Modernity and Religious Conservatism: Competing Media Narratives on Gender

open access: yesInternational Journal of Communication, 2020
Through a feminist critical discourse analysis of newspaper columns from both secular/nationalist and religio-conservative outlets, this article illustrates how the issue of increased violence against women—which was made visible by the murder and ...
Ece Algan
doaj  

European Governance and Democratic Legitimacy of EU Legislation Formation

open access: yesJournal of Business Administration and Social Studies
The basic of governance approach that is used after the 1990s as a new public administration model is public participation in public policies and government.
Müge Algan
doaj   +1 more source

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