Results 101 to 110 of about 24,368 (233)
TCAD simulation and modeling of AlGaN/GaN HFETs
, 2009 This work focused on the TCAD simulation and modeling of AlGaN/GaN HFETs. AlGaN/GaN HFETs have demonstrated excellent RF performance, which benefits from the high sheet charge density in these hetero-structures, the high carrier mobility and saturation ...
Kuang, Weiwei
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AlGaN MSM photodetectors with recess-etched LT-AlGaN cap layers
IET Optoelectronics, 2007 AlGaN metal-semiconductor-metal photodetectors with recess-etched low temperature (LT)-AlGaN cap layers were fabricated. It was found that photocurrent can be enhanced and a sharp cut-off can be achieved by etching away the LT-AlGaN cap layer in the light absorption region while keeping the LT-AIGaN cap layer under the contact electrodes.
H. Hung +4 more
openaire +1 more source
Growth and annealing study of Mg-doped AlGaN and GaN/AlGaN superlattices
, 2006 Mg-doped AlGaN and GaN/AlGaN superlattice are grown by metalorganic chemical vapour deposition (MOCVD). Rapid thermal annealing (RTA) treatments are carried out on the samples.
Wang XL (Wang Xiao-Liang) +11 more
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, 2007 Using the measured capacitance- voltage curves of Ni Schottky contacts with different areas on strained AlGaN/ GaN heterostructures and the current- voltage characteristics for the AlGaN/ GaN heterostructure field- effect transistors at low drain- source
Zhao, J, Shandong Univ, Sch Phys & Microelect, Jinan 250100, Peoples R China. 电子邮箱地址: linzj@sdu.edu.cn +6 more
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The Dynamic Modulation Doping Effect of Gas Molecules on an AlGaN/GaN Heterojunction Surface
NanomaterialsAlGaN/GaN high-electron-mobility transistors (HEMTs) are widely used in high-frequency and high-power applications owing to the high two-dimensional electron gas (2DEG) concentration. However, the microscopic origin of the 2DEG remains unclear.
Ying Ma +12 more
doaj +1 more source
Sedimentology and geochemistry of fine-grained sediments in the Solent estuarine system
, 1993 Grain size distributions, clay mineralogy and trace metal distributions associated with fine-grained sediments are used to define the prevailing sedimentological conditions and to trace sediment transport pathways in the Solent Estuarine System.
Algan, Azize Oya
core +1 more source
Advanced Electronic MaterialsUltrawide bandgap (UWBG) semiconductors offer new possibilities to develop power electronics. High voltage operation for the off‐state as well as high temperature stability of the devices in on‐state are required.
Julien Bassaler +13 more
doaj +1 more source
Current transport mechanism in graphene/AlGaN/GaN heterostructures with various Al mole fractions
AIP Advances, 2016 The current transport mechanism of graphene formed on AlxGa1−xN/GaN heterostructures with various Al mole fractions (x = 0.15, 0.20, 0.30, and 0.40) is investigated. The current–voltage measurement from graphene to AlGaN/GaN shows an excellent rectifying
Bhishma Pandit +3 more
doaj +1 more source
Molecular beam epitaxy growth of Al-rich AlGaN nanowires for deep ultraviolet optoelectronics
APL Materials, 2016 Self-organized AlGaN nanowires by molecular beam epitaxy have attracted significant attention for deep ultraviolet optoelectronics. However, due to the strong compositional modulations under conventional nitrogen rich growth conditions, emission ...
S. Zhao +9 more
doaj +1 more source
, 2009 The influence of annealed ohmic contact metals on the electron mobility of a two dimensional electron gas (2DEG) is investigated on ungated AlGaN/GaN heterostructures and AlGaN/GaN heterostructure field effect transistors (AlGaN/GaN HFETs).
Zhang Yu +5 more
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