Results 101 to 110 of about 3,102 (186)

Subarray programmable terahertz metasurface for optical logic and high-order amplitude modulation. [PDF]

Light Sci Appl
Wang L, Gong S, Xia C, Liu D, Cong X, Zhu A, Zeng H, Lan F, Yang Z, Otsuji T, Zhang Y.   +10 more
europepmc   +1 more source

Thermal Management with AlN Passivation in AlGaN/GaN HEMTs with an Air Gap Gate for Improved RF Performance: A Simulation Study. [PDF]

Micromachines (Basel)
Won YH, Kim TS, Lee JH, Lim CY, Min BG, Kang DM, Kim HS.   +6 more
europepmc   +1 more source

Study of polarization effect in AlGaN/AlGaN double quantum wells

Study of polarization effect in AlGaN/AlGaN double quantum wells
identifier:oai:t2r2.star.titech.ac.jp ...
openaire  

Novel Monolithic CAVET-HEMT Integration for Inverting-Switch Operation. [PDF]

ACS Omega
Tan WH, Zhao H, Farizuan M, Firdaus A, Kawarada H, Tao T, Falina S, Syamsul M.   +7 more
europepmc   +1 more source

Polarization Engineered Design for Normally-Off, Higher Drain Current and Higher Breakdown Voltage Gan-Based MOS-HEMT. [PDF]

ACS Omega
Omar A, Loan SA.
europepmc   +1 more source

III-Nitrides empower miniaturized spectral imager in ultraviolet. [PDF]

Light Sci Appl
Zhao Y, Li T, Ooi B.
europepmc   +1 more source

Thermionic emission conduction in Mo AlGaN/GaN diodes in the presence of Schottky barrier inhomogeneities. [PDF]

Sci Rep
Milazzo S, Greco G, Mirabella S, Iucolano F, Roccaforte F.   +4 more
europepmc   +1 more source

III-Nitride MEMS drum resonators on flexible metal substrates. [PDF]

Microsyst Nanoeng
Kassem A, Gujrati R, Bourrier D, Ayela C, Mathieu F, Dufour I, Nicu L, Ottapilakkal V, Vuong P, Sundaram S, Hunt W, Ougazzaden A, Leichlé T, Salvestrini JP.   +13 more
europepmc   +1 more source

Single-Crystalline Si Stacked AlGaN/GaN High-Electron-Mobility Transistors with Enhanced Two-Dimensional Electron Gas Density. [PDF]

Micromachines (Basel)
Ham G, Shin E, Yoon S, Yang J, Choi Y, Lim G, Kim K.   +6 more
europepmc   +1 more source

p-GaN source integrated GaN/AlGaN/GaN double heterojunction field-effect transistor (FET) for next-generation electronic applications. [PDF]

Sci Rep
Kumar M, Labau T, Xu L, Zgheib J, Escoffier R, Buckley J.   +5 more
europepmc   +1 more source